Heinz Mitlehner

Person

Munchen, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Lightly doped silicon carbide wafer and use thereof in high power d...
- Patent number 8,803,160
- Issue date Aug 12, 2014
- SiCED Electronics Development GmbH & Co. KG
- Alexandre Ellison
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Lightly doped silicon carbide wafer and use thereof in high power d...
- Patent number 8,097,524
- Issue date Jan 17, 2012
- Norstel AB
- Alexandre Ellison
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for making an integrated circuit including vertical junction...
- Patent number 7,763,506
- Issue date Jul 27, 2010
- Infineon Technologies Austria AG
- Michael Treu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure comprising a highly doped conductive channe...
- Patent number 7,615,802
- Issue date Nov 10, 2009
- SiCED Electronics Development GmbH & Co. KG
- Rudolf Elpelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lightly doped silicon carbide wafer and use thereof in high power d...
- Patent number 7,482,068
- Issue date Jan 27, 2009
- Norstel AB
- Alexandre Ellison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic switching device
- Patent number 7,206,178
- Issue date Apr 17, 2007
- Siemens Aktiengesellschaft
- Peter Friedrichs
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Electronic switching device and an operating method thereof
- Patent number 7,082,020
- Issue date Jul 25, 2006
- Siemens Aktiengesellschaft
- Peter Friedrichs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with a switch element and an edge element
- Patent number 7,071,503
- Issue date Jul 4, 2006
- SiCED Electronics Development GmbH & Co. KG
- Karl Dohnke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor component having a reduced electrical surfac...
- Patent number 6,847,091
- Issue date Jan 25, 2005
- Infineon Technologies AG
- Gerald Deboy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching device for switching at a high operating voltage
- Patent number 6,822,842
- Issue date Nov 23, 2004
- SiCED Electronics Development GmbH & Co. KG
- Peter Friedrichs
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor construction with buried island region and contact re...
- Patent number 6,693,322
- Issue date Feb 17, 2004
- SiCED Electronics Development GmbH & Co. KG
- Peter Friedrichs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field-effect transistor with more highly doped connecting...
- Patent number 6,693,314
- Issue date Feb 17, 2004
- SiCED Electronics Development GmbH & Co. KG
- Heinz Mitlehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection device for low voltage networks
- Patent number 6,665,591
- Issue date Dec 16, 2003
- Siemens Aktiengesellschaft
- Gerd Griepentrog
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
J-FET semiconductor configuration
- Patent number 6,653,666
- Issue date Nov 25, 2003
- SiCED Electronics Development GmbH & Co. KG
- Heinz Mitlehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid power MOSFET
- Patent number 6,633,195
- Issue date Oct 14, 2003
- Siemens Aktiengesellschaft
- Eric Baudelot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for disconnecting a cascode circuit with voltage-...
- Patent number 6,614,281
- Issue date Sep 2, 2003
- Siemens Aktiengesellschaft
- Eric Baudelot
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Hybrid power MOSFET for high current-carrying capacity
- Patent number 6,535,050
- Issue date Mar 18, 2003
- Siemens Aktiengesellschaft
- Eric Baudelot
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor configuration and current limiting device
- Patent number 6,459,108
- Issue date Oct 1, 2002
- Siemens Aktiengesellschaft
- Wolfgang Bartsch
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Silicon-based semiconductor component with high-efficiency barrier...
- Patent number 6,455,911
- Issue date Sep 24, 2002
- Siemens Aktiengesellschaft
- Dietrich Stephani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing losses during the commutation process
- Patent number 6,434,019
- Issue date Aug 13, 2002
- Siemens Aktiengesellschaft
- Eric Baudelot
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor component
- Patent number 6,388,271
- Issue date May 14, 2002
- Siemens Aktiengesellschaft
- Heinz Mitlehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic switching device having at least two semiconductor compo...
- Patent number 6,373,318
- Issue date Apr 16, 2002
- Siemens Aktiengesellschaft
- Karl-Otto Dohnke
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Silicon carbide junction field effect transistor
- Patent number 6,365,919
- Issue date Apr 2, 2002
- Infineon Technologies AG
- Jenoe Tihanyi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonlinear current limiting precharging circuit for a capacitor conn...
- Patent number 6,275,393
- Issue date Aug 14, 2001
- Siemens Aktiengesellschaft
- Eric Baudelot
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor configuration and use thereof
- Patent number 6,232,625
- Issue date May 15, 2001
- SiCED Electronics Development GmbH & Co. KG
- Wolfgang Bartsch
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Switching device
- Patent number 6,215,632
- Issue date Apr 10, 2001
- Siemens Aktiengesellschaft
- Peter Kaluza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device for limiting alternating electric currents, in particular in...
- Patent number 6,188,555
- Issue date Feb 13, 2001
- SiCED Electronics Development GmbH & Co. KG
- Heinz Mitlehner
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Electronic branch switching device
- Patent number 6,178,077
- Issue date Jan 23, 2001
- Siemens Aktiengesellschaft
- Peter Kaluza
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Electronic device, in particular for switching electric currents, f...
- Patent number 6,157,049
- Issue date Dec 5, 2000
- Siemens Aktiengesellschaft
- Heinz Mitlehner
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Electronic switch for use with inductive loads
- Patent number 6,046,516
- Issue date Apr 4, 2000
- Siemens Aktiengesellschaft
- Reinhard Maier
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...
- Publication number 20120091471
- Publication date Apr 19, 2012
- SiCED Electronics Development GmbH
- Alexandre Ellison
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...
- Publication number 20090114924
- Publication date May 7, 2009
- NORSTEL AB
- Alexandre Ellison
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MAKING AN INTEGRATED CIRCUIT INCLUDING VERTICAL JUNCTION...
- Publication number 20090068803
- Publication date Mar 12, 2009
- Infineon Technologies Austria AG
- Michael Treu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure comprising a highly doped conductive channe...
- Publication number 20060255373
- Publication date Nov 16, 2006
- SiCED Electronics Development GmbH & Co. KG
- Rudolf Elpelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lightly doped silicon carbide wafer and use thereof in high power d...
- Publication number 20060137600
- Publication date Jun 29, 2006
- Alexandre Ellison
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor structure with a switch element and an edge element
- Publication number 20050062112
- Publication date Mar 24, 2005
- SiCED Electronics Development GmbH & Co., KG
- Karl Dohnke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic switching device and an operating method thereof
- Publication number 20040047098
- Publication date Mar 11, 2004
- Peter Friedrichs
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Electronic switching device
- Publication number 20040027753
- Publication date Feb 12, 2004
- Peter Friedrichs
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Switching device for switching at a high operating voltage
- Publication number 20030168919
- Publication date Sep 11, 2003
- Peter Friedrichs
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor construction with buried island region and contact re...
- Publication number 20030137010
- Publication date Jul 24, 2003
- Peter Friedrichs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid power MOSFET
- Publication number 20020153938
- Publication date Oct 24, 2002
- Siemens AG
- Eric Baudelot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor product with a Schottky contact
- Publication number 20020109200
- Publication date Aug 15, 2002
- Wolfgang Bartsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated semiconductor device having a lateral power element
- Publication number 20020070412
- Publication date Jun 13, 2002
- Heinz Mitlehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
J-FET semiconductor configuration
- Publication number 20020020849
- Publication date Feb 21, 2002
- Heinz Mitlehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Junction field-effect transistor with more highly doped connecting...
- Publication number 20020014640
- Publication date Feb 7, 2002
- Heinz Mitlehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for balancing the power losses in a number of...
- Publication number 20010054848
- Publication date Dec 27, 2001
- Siemens AG
- Eric Baudelot
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Hybrid power MOSFET for high current-carrying capacity
- Publication number 20010050589
- Publication date Dec 13, 2001
- Siemens AG
- Eric Baudelot
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Method for reducing losses during the commutation process
- Publication number 20010040813
- Publication date Nov 15, 2001
- Siemens AG
- Eric Baudelot
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Electronic switching device having at least two semiconductor compo...
- Publication number 20010024138
- Publication date Sep 27, 2001
- Karl-Otto Dohnke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical semiconductor component having a reduced electrical surfac...
- Publication number 20010020732
- Publication date Sep 13, 2001
- Gerald Deboy
- H01 - BASIC ELECTRIC ELEMENTS

Heinz Mitlehner

Person

Patents Grantslast 30 patents

Lightly doped silicon carbide wafer and use thereof in high power d...

Lightly doped silicon carbide wafer and use thereof in high power d...

Method for making an integrated circuit including vertical junction...

Semiconductor structure comprising a highly doped conductive channe...

Lightly doped silicon carbide wafer and use thereof in high power d...

Electronic switching device

Electronic switching device and an operating method thereof

Semiconductor structure with a switch element and an edge element

Vertical semiconductor component having a reduced electrical surfac...

Switching device for switching at a high operating voltage

Semiconductor construction with buried island region and contact re...

Junction field-effect transistor with more highly doped connecting...

Protection device for low voltage networks

J-FET semiconductor configuration

Hybrid power MOSFET

Method and device for disconnecting a cascode circuit with voltage-...

Hybrid power MOSFET for high current-carrying capacity

Semiconductor configuration and current limiting device

Silicon-based semiconductor component with high-efficiency barrier...

Method for reducing losses during the commutation process

Semiconductor component

Electronic switching device having at least two semiconductor compo...

Silicon carbide junction field effect transistor

Nonlinear current limiting precharging circuit for a capacitor conn...

Semiconductor configuration and use thereof

Switching device

Device for limiting alternating electric currents, in particular in...

Electronic branch switching device

Electronic device, in particular for switching electric currents, f...

Electronic switch for use with inductive loads

Patents Applicationslast 30 patents

LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...

LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER D...

METHOD FOR MAKING AN INTEGRATED CIRCUIT INCLUDING VERTICAL JUNCTION...

Semiconductor structure comprising a highly doped conductive channe...

Lightly doped silicon carbide wafer and use thereof in high power d...

Semiconductor structure with a switch element and an edge element

Electronic switching device and an operating method thereof

Electronic switching device

Switching device for switching at a high operating voltage

Semiconductor construction with buried island region and contact re...

Hybrid power MOSFET

Semiconductor product with a Schottky contact

Integrated semiconductor device having a lateral power element

J-FET semiconductor configuration

Junction field-effect transistor with more highly doped connecting...

Method and apparatus for balancing the power losses in a number of...

Hybrid power MOSFET for high current-carrying capacity

Method for reducing losses during the commutation process

Electronic switching device having at least two semiconductor compo...

Vertical semiconductor component having a reduced electrical surfac...