Hiromichi Ohashi

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor switching element
- Patent number 7,531,871
- Issue date May 12, 2009
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
wideband gap power semiconductor device having a low on-resistance...
- Patent number 7,244,974
- Issue date Jul 17, 2007
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,238,576
- Issue date Jul 3, 2007
- Kabushiki Kaisha Toshiba
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device used for power control
- Patent number 7,102,179
- Issue date Sep 5, 2006
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switching element
- Patent number 7,067,870
- Issue date Jun 27, 2006
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wideband gap having a low on-resistance and having a high avalanche...
- Patent number 6,940,090
- Issue date Sep 6, 2005
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 6,933,544
- Issue date Aug 23, 2005
- Kabushiki Kaisha Toshiba
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switching element provided with buried electrode
- Patent number 6,750,508
- Issue date Jun 15, 2004
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and control method thereof
- Patent number 6,534,998
- Issue date Mar 18, 2003
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, drive method, and drive apparatus
- Patent number 6,323,717
- Issue date Nov 27, 2001
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device and control method thereof
- Patent number 6,153,896
- Issue date Nov 28, 2000
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Micro power switch using a cold cathode and a driving method thereof
- Patent number 6,057,636
- Issue date May 2, 2000
- Kabushiki Kaisha Toshiba
- Tadashi Sakai
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device
- Patent number 6,037,632
- Issue date Mar 14, 2000
- Kabushiki Kaisha Toshiba
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductivity modulated MOSFET
- Patent number 6,025,622
- Issue date Feb 15, 2000
- Kabushiki Kaisha Toshiba
- Akio Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Micro-vacuum device
- Patent number 5,977,693
- Issue date Nov 2, 1999
- Kabushiki Kaisha Toshiba
- Masayuki Nakamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductivity modulated MOSFET
- Patent number 5,780,887
- Issue date Jul 14, 1998
- Kabushiki Kaisha Toshiba
- Akio Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric cold cathode
- Patent number 5,747,926
- Issue date May 5, 1998
- Kabushiki Kaisha Toshiba
- Masayuki Nakamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 5,714,775
- Issue date Feb 3, 1998
- Kabushiki Kaisha Toshiba
- Tomoki Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductivity modulated MOSFET
- Patent number 5,286,984
- Issue date Feb 15, 1994
- Kabushiki Kaisha Toshiba
- Akio Nakagawa
- F24 - HEATING RANGES VENTILATING
Information Patent Grant
Conductivity modulated field effect transistor with optimized anode...
- Patent number 5,212,396
- Issue date May 18, 1993
- Kabushiki Kaisha Toshiba
- Akio Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductivity modulated MOSFET
- Patent number 5,093,701
- Issue date Mar 3, 1992
- Kabushiki Kaisha Toshiba
- Akio Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductivity modulated MOSFET
- Patent number 5,086,323
- Issue date Feb 4, 1992
- Kabushiki Kaisha Toshiba
- Akio Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching device with anode shortening structure
- Patent number 5,028,974
- Issue date Jul 2, 1991
- Kabushiki Kaisha Toshiba
- Mituhiko Kitagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor switching apparatus with heat sinks
- Patent number 5,006,921
- Issue date Apr 9, 1991
- Kabushiki Kaisha Toshiba
- Masaru Ishizuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral conductivity modulated MOSFET
- Patent number 4,928,155
- Issue date May 22, 1990
- Kabushiki Kaisha Toshiba
- Akio Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive modulated MOSFET
- Patent number 4,881,120
- Issue date Nov 14, 1989
- Kabushiki Kaisha Toshiba
- Akio Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting gate turn-off thyristor device
- Patent number 4,791,470
- Issue date Dec 13, 1988
- Kabushiki Kaisha Toshiba
- Takashi Shinohe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral conductivity modulated MOSFET
- Patent number 4,782,372
- Issue date Nov 1, 1988
- Kabushiki Kaisha Toshiba
- Akio Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing compound semiconductor apparatus
- Patent number 4,738,935
- Issue date Apr 19, 1988
- Kabushiki Kaisha Toshiba
- Masaru Shimbo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS controlled gate turn-off thyristor
- Patent number 4,717,940
- Issue date Jan 5, 1988
- Kabushiki Kaisha Toshiba
- Takashi Shinohe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power semiconductor switching element
- Publication number 20060145230
- Publication date Jul 6, 2006
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A Wideband Gap Power Semiconductor Device Having A Low On-Resistanc...
- Publication number 20050263844
- Publication date Dec 1, 2005
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20050110042
- Publication date May 26, 2005
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device used for power control
- Publication number 20050087765
- Publication date Apr 28, 2005
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device used for power control
- Publication number 20040227211
- Publication date Nov 18, 2004
- Wataru Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor switching element
- Publication number 20040155287
- Publication date Aug 12, 2004
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040043565
- Publication date Mar 4, 2004
- Masakazu Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor switching element
- Publication number 20020030237
- Publication date Mar 14, 2002
- Ichiro Omura
- H01 - BASIC ELECTRIC ELEMENTS

Hiromichi Ohashi

Person

Patents Grantslast 30 patents

Power semiconductor switching element

wideband gap power semiconductor device having a low on-resistance...

Semiconductor device and method of manufacturing the same

Power semiconductor device used for power control

Power semiconductor switching element

Wideband gap having a low on-resistance and having a high avalanche...

Power semiconductor device

Power semiconductor switching element provided with buried electrode

Semiconductor device and control method thereof

Semiconductor device, drive method, and drive apparatus

Semiconductor device and control method thereof

Micro power switch using a cold cathode and a driving method thereof

Semiconductor device

Conductivity modulated MOSFET

Micro-vacuum device

Conductivity modulated MOSFET

Ferroelectric cold cathode

Power semiconductor device

Conductivity modulated MOSFET

Conductivity modulated field effect transistor with optimized anode...

Conductivity modulated MOSFET

Conductivity modulated MOSFET

Semiconductor switching device with anode shortening structure

Power semiconductor switching apparatus with heat sinks

Lateral conductivity modulated MOSFET

Conductive modulated MOSFET

Reverse conducting gate turn-off thyristor device

Lateral conductivity modulated MOSFET

Method of manufacturing compound semiconductor apparatus

MIS controlled gate turn-off thyristor

Patents Applicationslast 30 patents

Power semiconductor switching element

A Wideband Gap Power Semiconductor Device Having A Low On-Resistanc...

POWER SEMICONDUCTOR DEVICE

Power semiconductor device used for power control

Power semiconductor device used for power control

Power semiconductor switching element

Semiconductor device and method of manufacturing the same

Power semiconductor switching element