James A. Cooper

Person

West Lafayette, IN, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of reducing the electrical and thermal resistance of SiC su...
- Patent number 12,148,825
- Issue date Nov 19, 2024
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-based power semiconductor device having increased current carry...
- Patent number 11,973,114
- Issue date Apr 30, 2024
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Counter-doped silicon carbide Schottky barrier diode
- Patent number 11,728,440
- Issue date Aug 15, 2023
- SEMIQ INCORPORATED
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Counter-doped silicon carbide Schottky barrier diode
- Patent number 11,631,773
- Issue date Apr 18, 2023
- SEMIQ INCORPORATED
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Counter-doped silicon carbide Schottky barrier diode
- Patent number 11,469,333
- Issue date Oct 11, 2022
- SEMIQ INCORPORATED
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-based power semiconductor device having increased current carry...
- Patent number 11,145,721
- Issue date Oct 12, 2021
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of reducing the electrical and thermal resistance of SiC su...
- Patent number 10,879,388
- Issue date Dec 29, 2020
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of reducing the electrical and thermal resistance of SiC su...
- Patent number 10,505,035
- Issue date Dec 10, 2019
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-based power semiconductor device having increased current carry...
- Patent number 10,403,720
- Issue date Sep 3, 2019
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS-based power semiconductor device having increased current carry...
- Patent number 9,997,599
- Issue date Jun 12, 2018
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of reducing the electrical and thermal resistance of SiC su...
- Patent number 9,780,206
- Issue date Oct 3, 2017
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-channel silicon carbide power MOSFET
- Patent number 8,476,697
- Issue date Jul 2, 2013
- Purdue Research Foundation
- James A. Cooper
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 8,343,841
- Issue date Jan 1, 2013
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-channel silicon carbide power mosfet
- Patent number 8,133,789
- Issue date Mar 13, 2012
- Purdue Research Foundation
- James A. Cooper
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
SIC power DMOSFET with self-aligned source contact
- Patent number 8,035,112
- Issue date Oct 11, 2011
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage power semiconductor device
- Patent number 7,498,633
- Issue date Mar 3, 2009
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power devices in wide bandgap semiconductor
- Patent number 6,515,302
- Issue date Feb 4, 2003
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-metal-trench silicon carbide Schottky pinch rectifier
- Patent number 6,362,495
- Issue date Mar 26, 2002
- Purdue Research Foundation
- Kipp J. Schoen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for increasing the maximum voltage of silicon carbide pow...
- Patent number 6,180,958
- Issue date Jan 30, 2001
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile random access memory device having transistor and capac...
- Patent number 5,465,249
- Issue date Nov 7, 1995
- Cree Research, Inc.
- James A. Cooper
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic random access memory device
- Patent number 5,365,477
- Issue date Nov 15, 1994
- The United States of America as represented by the Secretary of the Navy
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transferred electron device
- Patent number 4,894,689
- Issue date Jan 16, 1990
- American Telephone and Telegraph Company, AT&T Bell Laboratories
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 4,635,083
- Issue date Jan 6, 1987
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTORS WITH FIELD-SHIELD CONTACTS AND BASE CONTACTS
- Publication number 20240355872
- Publication date Oct 24, 2024
- GLOBALFOUNDRIES U.S. Inc.
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH DEPOSITED GATE DIELECTRIC LAYERS
- Publication number 20240290879
- Publication date Aug 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH A GATE DIELECTRIC LAYER FORMED ON A S...
- Publication number 20240290617
- Publication date Aug 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS-Based Power Semiconductor Device Having Increased Current Carry...
- Publication number 20240282821
- Publication date Aug 22, 2024
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD-EFFECT TRANSISTORS IMPLEMENTED IN A WIDE BANDGAP SEM...
- Publication number 20240063309
- Publication date Feb 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DEVICES WITH IMPROVED ON-RESISTANCE
- Publication number 20240047531
- Publication date Feb 8, 2024
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS DEVICES WITH INCREASED SHORT CIRCUIT ROBUSTNESS
- Publication number 20220384625
- Publication date Dec 1, 2022
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS-Based Power Semiconductor Device Having Increased Current Carry...
- Publication number 20220109050
- Publication date Apr 7, 2022
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Counter-Doped Silicon Carbide Schottky Barrier Diode
- Publication number 20220059708
- Publication date Feb 24, 2022
- SemiQ Incorporated
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Counter-Doped Silicon Carbide Schottky Barrier Diode
- Publication number 20220059709
- Publication date Feb 24, 2022
- SemiQ Incorporated
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Reducing the Electrical and Thermal Resistance of SIC Su...
- Publication number 20210119042
- Publication date Apr 22, 2021
- Global Power Technologies Group, Inc.
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Reducing the Electrical and Thermal Resistance of SIC Su...
- Publication number 20200111904
- Publication date Apr 9, 2020
- Global Power Technologies Group, Inc.
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS-Based Power Semiconductor Device Having Increased Current Carry...
- Publication number 20200105878
- Publication date Apr 2, 2020
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS DEVICES WITH INCREASED SHORT CIRCUIT ROBUSTNESS
- Publication number 20190386124
- Publication date Dec 19, 2019
- Purdue Research Foundation
- James Albert Cooper
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
MOS-Based Power Semiconductor Device Having Increased Current Carry...
- Publication number 20180358439
- Publication date Dec 13, 2018
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF REDUCING THE ELECTRICAL AND THERMAL RESISTANCE OF SiC SU...
- Publication number 20180026132
- Publication date Jan 25, 2018
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE BASED ON WIDEBAND GAP SEMICONDUCTOR MATERIALS
- Publication number 20180019309
- Publication date Jan 18, 2018
- Global Power Technologies Group, Inc.
- Rahul Radhakrishnan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF REDUCING THE ELECTRICAL AND THERMAL RESISTANCE OF SiC SU...
- Publication number 20170025530
- Publication date Jan 26, 2017
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS-BASED POWER SEMICONDUCTOR DEVICE HAVING INCREASED CURRENT CARRY...
- Publication number 20160247881
- Publication date Aug 25, 2016
- PURDUE RESEARCH FOUNDATION
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20110151649
- Publication date Jun 23, 2011
- Purdue Research Foundation
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a semiconductor device
- Publication number 20060194400
- Publication date Aug 31, 2006
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-voltage power semiconductor device
- Publication number 20060192256
- Publication date Aug 31, 2006
- James A. Cooper
- H01 - BASIC ELECTRIC ELEMENTS

James A. Cooper

Person

Patents Grantslast 30 patents

Methods of reducing the electrical and thermal resistance of SiC su...

MOS-based power semiconductor device having increased current carry...

Counter-doped silicon carbide Schottky barrier diode

Counter-doped silicon carbide Schottky barrier diode

Counter-doped silicon carbide Schottky barrier diode

MOS-based power semiconductor device having increased current carry...

Methods of reducing the electrical and thermal resistance of SiC su...

Methods of reducing the electrical and thermal resistance of SiC su...

MOS-based power semiconductor device having increased current carry...

MOS-based power semiconductor device having increased current carry...

Methods of reducing the electrical and thermal resistance of SiC su...

Short-channel silicon carbide power MOSFET

Method for fabricating a semiconductor device

Short-channel silicon carbide power mosfet

SIC power DMOSFET with self-aligned source contact

High-voltage power semiconductor device

Power devices in wide bandgap semiconductor

Dual-metal-trench silicon carbide Schottky pinch rectifier

Structure for increasing the maximum voltage of silicon carbide pow...

Nonvolatile random access memory device having transistor and capac...

Dynamic random access memory device

Transferred electron device

Memory device

Patents Applicationslast 30 patents

TRANSISTORS WITH FIELD-SHIELD CONTACTS AND BASE CONTACTS

FIELD-EFFECT TRANSISTORS WITH DEPOSITED GATE DIELECTRIC LAYERS

FIELD-EFFECT TRANSISTORS WITH A GATE DIELECTRIC LAYER FORMED ON A S...

MOS-Based Power Semiconductor Device Having Increased Current Carry...

JUNCTION FIELD-EFFECT TRANSISTORS IMPLEMENTED IN A WIDE BANDGAP SEM...

POWER DEVICES WITH IMPROVED ON-RESISTANCE

MOS DEVICES WITH INCREASED SHORT CIRCUIT ROBUSTNESS

MOS-Based Power Semiconductor Device Having Increased Current Carry...

Counter-Doped Silicon Carbide Schottky Barrier Diode

Counter-Doped Silicon Carbide Schottky Barrier Diode

Methods of Reducing the Electrical and Thermal Resistance of SIC Su...

Methods of Reducing the Electrical and Thermal Resistance of SIC Su...

MOS-Based Power Semiconductor Device Having Increased Current Carry...

MOS DEVICES WITH INCREASED SHORT CIRCUIT ROBUSTNESS

MOS-Based Power Semiconductor Device Having Increased Current Carry...

METHODS OF REDUCING THE ELECTRICAL AND THERMAL RESISTANCE OF SiC SU...

SEMICONDUCTOR DEVICE BASED ON WIDEBAND GAP SEMICONDUCTOR MATERIALS

METHODS OF REDUCING THE ELECTRICAL AND THERMAL RESISTANCE OF SiC SU...

MOS-BASED POWER SEMICONDUCTOR DEVICE HAVING INCREASED CURRENT CARRY...

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

Method for fabricating a semiconductor device

High-voltage power semiconductor device