Janmye Sung

Person

Yang-Mei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method fabricating a DRAM cell with an area equal to four times the...
- Patent number 6,198,121
- Issue date Mar 6, 2001
- Vanguard International Semiconductor Corporation
- JanMye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate a DRAM cell with an area equal to five times th...
- Patent number 6,180,453
- Issue date Jan 30, 2001
- Vanguard International Semiconductor Corporation
- JanMye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a self aligned contact for a capacitor over b...
- Patent number 6,163,047
- Issue date Dec 19, 2000
- Vanguard International Semiconductor Corp.
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor over bit line structure using a straight bit line shape
- Patent number 6,137,130
- Issue date Oct 24, 2000
- Vanguard International Semiconductor Corporation
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating capacitor-over-bit-line dynamic random acces...
- Patent number 6,136,643
- Issue date Oct 24, 2000
- Vanguard International Semiconductor Company
- Erik S. Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor over bit line structure using a straight bit line shape
- Patent number 6,025,227
- Issue date Feb 15, 2000
- Vanguard International Semiconductor Corporation
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating low resistance bit line structures, along wi...
- Patent number 6,008,084
- Issue date Dec 28, 1999
- Vanguard International Semiconductor Corporation
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Design and a novel process for formation of DRAM bit line and capac...
- Patent number 6,008,085
- Issue date Dec 28, 1999
- Vanguard International Semiconductor Corporation
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a buried reservoir capacitor structure for hi...
- Patent number 5,943,581
- Issue date Aug 24, 1999
- Vanguard International Semiconductor Corporation
- Chih-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of a one gigabit capacitor over bit line DRA...
- Patent number 5,879,986
- Issue date Mar 9, 1999
- Vangaurd International Semiconductor Corporation
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a high performance logic and embedded dram...
- Patent number 5,858,831
- Issue date Jan 12, 1999
- Vanguard International Semiconductor Corporation
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a capacitor with a multiple pillar structure
- Patent number 5,821,142
- Issue date Oct 13, 1998
- Vanguard International Semiconductor
- JanMye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced mask DRAM process
- Patent number 5,808,335
- Issue date Sep 15, 1998
- Vanguard International Semiconductor Corporation
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a low cost DRAM cell with self aligned twin tub C...
- Patent number 5,792,680
- Issue date Aug 11, 1998
- Vanguard International Semiconductor Corporation
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dram cell capacitor fabrication method
- Patent number 5,789,291
- Issue date Aug 4, 1998
- Vanguard International Semiconductor Corporation
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell array with a self-aligned, buried bit line
- Patent number 5,753,551
- Issue date May 19, 1998
- Vanguard International Semiconductor Corporation
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cycle time CMOS process
- Patent number 5,729,056
- Issue date Mar 17, 1998
- Vanguard International Semiconductor Corporation
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cycle time CMOS process
- Patent number 5,573,962
- Issue date Nov 12, 1996
- Vanguard International Semiconductor Corporation
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced mask DRAM process
- Patent number 5,550,078
- Issue date Aug 27, 1996
- Vanguard International Semiconductor Corp.
- Janmye Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
method for fabricating an embedded vertical bipolar transistor and...
- Patent number 5,547,893
- Issue date Aug 20, 1996
- Vanguard International Semiconductor Corp.
- JanMye Sung
- H01 - BASIC ELECTRIC ELEMENTS

Janmye Sung

Person

Patents Grantslast 30 patents

Method fabricating a DRAM cell with an area equal to four times the...

Method to fabricate a DRAM cell with an area equal to five times th...

Method of fabricating a self aligned contact for a capacitor over b...

Capacitor over bit line structure using a straight bit line shape

Method for fabricating capacitor-over-bit-line dynamic random acces...

Capacitor over bit line structure using a straight bit line shape

Method for fabricating low resistance bit line structures, along wi...

Design and a novel process for formation of DRAM bit line and capac...

Method of fabricating a buried reservoir capacitor structure for hi...

Method for fabrication of a one gigabit capacitor over bit line DRA...

Process for fabricating a high performance logic and embedded dram...

Method for forming a capacitor with a multiple pillar structure

Reduced mask DRAM process

Method of forming a low cost DRAM cell with self aligned twin tub C...

Dram cell capacitor fabrication method

Memory cell array with a self-aligned, buried bit line

Low cycle time CMOS process

Low cycle time CMOS process

Reduced mask DRAM process

method for fabricating an embedded vertical bipolar transistor and...