Judy L. Hoyt

Person

Newton, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming gate electrode with depletion suppression and tu...
- Patent number 9,269,633
- Issue date Feb 23, 2016
- The Board of Trustees of the Leland Stanford Junior University
- Steven Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode with depletion suppression and tunable workfunction
- Patent number 7,867,859
- Issue date Jan 11, 2011
- The Board of Trustees of the Leland Stanford Junior University
- Steven Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing semiconductor article using graded epitaxial...
- Patent number 6,921,914
- Issue date Jul 26, 2005
- Massachusetts Institute of Technology
- Zhi-Yuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate structure
- Patent number 6,737,670
- Issue date May 18, 2004
- Massachusetts Institute of Technology
- Zhi-Yuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing semiconductor article using graded epitaxial...
- Patent number 6,713,326
- Issue date Mar 30, 2004
- Masachusetts Institute of Technology
- Zhi-Yuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing semiconductor article using graded epitaxial...
- Patent number 6,573,126
- Issue date Jun 3, 2003
- Massachusetts Institute of Technology
- Zhi-Yuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating a semiconductor device with strained Si.sub.1-x Ge.sub....
- Patent number 5,256,550
- Issue date Oct 26, 1993
- Hewlett-Packard Company
- Stephen Laderman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective and non-selective deposition of Si.sub.1-x Ge.sub.x on a...
- Patent number 5,202,284
- Issue date Apr 13, 1993
- Hewlett-Packard Company
- Theodore I. Kamins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor processing with silicon cap over Si.sub.1-x Ge.sub.x...
- Patent number 5,084,411
- Issue date Jan 28, 1992
- Hewlett-Packard Company
- Stephen Laderman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of welding thermocouples to silicon wafers for temperature m...
- Patent number 4,787,551
- Issue date Nov 29, 1988
- Stanford University
- Judy L. Hoyt
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR

Patents Applicationslast 30 patents

Information Patent Application
GATE ELECTRODE WITH DEPLETION SUPPRESSION AND TUNABLE WORKFUNCTION
- Publication number 20140329378
- Publication date Nov 6, 2014
- The Board of Trustees of the Leland Stanford Junior University
- Steven Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL GROWTH OF THIN SMOOTH GERMANIUM (Ge) ON SILICON (Si) UTIL...
- Publication number 20090072271
- Publication date Mar 19, 2009
- Leonardo Gomez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single metal gate material CMOS using strained si-silicon germanium...
- Publication number 20050274978
- Publication date Dec 15, 2005
- Dimitri A. Antoniadis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing semiconductor article using graded epitaxial...
- Publication number 20050009288
- Publication date Jan 13, 2005
- Massachusetts Institute of Technology
- Zhi-Yuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor substrate structure
- Publication number 20040173791
- Publication date Sep 9, 2004
- Massachusetts Institute of Technology
- Zhi-Yuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate electrode with depletion suppression and tunable workfunction
- Publication number 20040113211
- Publication date Jun 17, 2004
- Steven Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing semiconductor article using graded epitaxial...
- Publication number 20030168654
- Publication date Sep 11, 2003
- Massachusetts Institute of Technology
- Zhi-Yuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing semiconductor article using graded epitaxial...
- Publication number 20030155568
- Publication date Aug 21, 2003
- Massachusetts Institute of Technology
- Zhi-Yuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing semiconductor article using graded expital gr...
- Publication number 20020072130
- Publication date Jun 13, 2002
- Zhi-Yuan Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Judy L. Hoyt

Person

Patents Grantslast 30 patents

Method for forming gate electrode with depletion suppression and tu...

Gate electrode with depletion suppression and tunable workfunction

Process for producing semiconductor article using graded epitaxial...

Semiconductor substrate structure

Process for producing semiconductor article using graded epitaxial...

Process for producing semiconductor article using graded epitaxial...

Fabricating a semiconductor device with strained Si.sub.1-x Ge.sub....

Selective and non-selective deposition of Si.sub.1-x Ge.sub.x on a...

Semiconductor processing with silicon cap over Si.sub.1-x Ge.sub.x...

Method of welding thermocouples to silicon wafers for temperature m...

Patents Applicationslast 30 patents

GATE ELECTRODE WITH DEPLETION SUPPRESSION AND TUNABLE WORKFUNCTION

EPITAXIAL GROWTH OF THIN SMOOTH GERMANIUM (Ge) ON SILICON (Si) UTIL...

Single metal gate material CMOS using strained si-silicon germanium...

Process for producing semiconductor article using graded epitaxial...

Semiconductor substrate structure

Gate electrode with depletion suppression and tunable workfunction

Process for producing semiconductor article using graded epitaxial...

Process for producing semiconductor article using graded epitaxial...

Process for producing semiconductor article using graded expital gr...