Wolf, "Silicon Processing for the VLSI Era", vol. 1, 1986, Lattice Press, p. 198. |
Ghandhi, "VLSI Fabrication Principles", 1983, John Wiley and Sons, p. 385. |
Lee et al., ". . . Molecular-Beam Epitaxy Grown GaAs-on-Si", J. Vac. Sci. Technol., B5(3), May/Jun. 1987, pp. 827-830. |
King et al. ". . . Epitaxially Grown Si P-N Junctions Fabricated Using Limited Reaction Processing", IEEE, Elec. Device Letters, vol. 9, No. 5, May 1988, pp. 229-231. |
Bean et al., ". . . Growth of Ge.sub.x Si.sub.1-x on Silicon by Molecular Beam Epitaxy", Appl. Phys. Lett. 44(1), 1 Jan. 1984, pp. 102-104. |
Gibbons et al., "Limited Reaction Processing: Silicon and III-V Materials", Mat. Res. Soc. Supp., vol. 92, 1987, pp. 281-294. |
King et al., "Si/Si.sub.1-x Ge.sub.x Heterojunction Bipolar Transistors . . . ", IEEE Electron Device Lett., vol. 10, No. 2, Feb. 1989, pp. 52-54. |
Gronet et al., "Growth of GeSi/Si Strained-Layer Superlattices . . . ", J. Appl. Phys., 61(6), 15 Mar. 1987, pp. 2407-2409. |
Temkin et al., "Ge.sub.x Si.sub.1-x Strained-Layer Heterostructure Bipolar Transistors," Appl. Phys. Lett., 52(13), 28 Mar. 1988, pp. 1089-1091. |
Lee et al., "Epitaxy of GaAs on Si: MBE and OMCVD," Mat. Res. Soc. Symp., vol. 91, 1987, pp. 33-45. |
C. A. King et al., "Si/Si.sub.1-x Ge.sub.x Heterojunction Bipolar Transistors Produced by Limited Reaction Processing", IEEE Electron Device Letters, vol. 10, Feb. 1989, pp. 52-54. |
D. L. Harame, et al., "High Performance Si and SiGE-Base PNP Transistors", Tech. Digest, International Electron Devices Meeting, San Francisco, Dec. 1988, pp. 889-891. |
J. W. Matthews, et al., "Defects in epitaxial Multilayers", Journal of Crystal Growth 27 (1987) pp. 118-125. |
Y. Kohama et al., "Determination of the Critical Layer Thickness of Si.sub.1-x Ge.sub.x /Si Heterostructures by Direct Observation of Misfit Dislocations", Appl. Phys. Letter 52 (5), Feb. 1, 1988, pp. 380-382. |
G. L. Patton et al., "Silicon-Germanium-Base Heterojunction Bipolar Transistors by Molecular Beam Epitaxy", Electron Device Letters, vol. 9, No. 4, Apr. 1988, pp. 165-167. |
J. F. Gibbons et al., "Limited Reaction Processing: Silicon Epitaxy", app. Phys. Lett. vol 47, (1985), pp. 721-723. |
R. Hull and A. Fischer-Colbrie "Nucleation of GaAs on Si: Experimental evidence for a three-dimensional critical transition" Applied Physics Letters, vol. 50, No. 13, Mar. 30, 1987, pp. 851-853. |
J. W. Lee et al. "Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si Substrates" Applied Physics Letters, vol. 50, No. 1, Jan. 5, 1987, pp. 31-33. |