Klaus D. Beyer

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Shallow trench isolation structure for strained Si on SiGe
- Patent number 7,183,175
- Issue date Feb 27, 2007
- International Business Machines Corporation
- Steven John Koester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triple oxide fill for trench isolation
- Patent number 6,825,097
- Issue date Nov 30, 2004
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of formation of an oxynitride shallow trench isolation
- Patent number 6,764,922
- Issue date Jul 20, 2004
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxynitride shallow trench isolation and method of formation
- Patent number 6,709,951
- Issue date Mar 23, 2004
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation for thin silicon/silicon-on-insulator subs...
- Patent number 6,602,759
- Issue date Aug 5, 2003
- International Business Machines Corporation
- Atul C. Ajmera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming shallow trench isolation for thin silicon-on-insu...
- Patent number 6,599,813
- Issue date Jul 29, 2003
- International Business Machines Corporation
- Klaus Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxynitride shallow trench isolation and method of formation
- Patent number 6,498,383
- Issue date Dec 24, 2002
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing crevices induced by chemical-mechanical polishing
- Patent number 5,965,459
- Issue date Oct 12, 1999
- International Business Machines Corporation
- Klaus Dietrich Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI transistor having a self-aligned body contact
- Patent number 5,962,895
- Issue date Oct 5, 1999
- International Business Machines Corporation
- Klaus Dietrich Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI transistor having a self-aligned body contact
- Patent number 5,729,039
- Issue date Mar 17, 1998
- International Business Machines Corporation
- Klaus Dietrich Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Large scale IC personalization method employing air dielectric stru...
- Patent number 5,530,290
- Issue date Jun 25, 1996
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Larce scale IC personalization method employing air dielectric stru...
- Patent number 5,444,015
- Issue date Aug 22, 1995
- International Business Machines Corporation
- John M. Aitken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a SOI transistor having a self-aligned body contact
- Patent number 5,405,795
- Issue date Apr 11, 1995
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reach-through isolation silicon-on-insulator device
- Patent number 5,391,911
- Issue date Feb 21, 1995
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded wafer structure having a buried insulation layer
- Patent number 5,366,923
- Issue date Nov 22, 1994
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal dissipation of integrated circuits using diamond paths
- Patent number 5,313,094
- Issue date May 17, 1994
- International Business Machines Corportion
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reach-through isolation etching method for silicon-on-insulator dev...
- Patent number 5,306,659
- Issue date Apr 26, 1994
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bonded wafer structure having a buried insulation layer
- Patent number 5,276,338
- Issue date Jan 4, 1994
- International Business Machines Corporation
- Klaus Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming uniformly thin, isolated silicon mesas on an insu...
- Patent number 5,264,387
- Issue date Nov 23, 1993
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a thin silicon-on-insulator layer
- Patent number 5,234,535
- Issue date Aug 10, 1993
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated films using an air dielectric
- Patent number 5,232,866
- Issue date Aug 3, 1993
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried air dielectric isolation of silicon islands
- Patent number 5,227,658
- Issue date Jul 13, 1993
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sub-layer contact technique using in situ doped amorphous silicon a...
- Patent number 5,192,708
- Issue date Mar 9, 1993
- International Business Machines Corporation
- Klaus Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air-filled isolation trench with chemically vapor deposited silicon...
- Patent number 5,098,856
- Issue date Mar 24, 1992
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chem-mech polishing method for producing coplanar metal/insulator f...
- Patent number 4,944,836
- Issue date Jul 31, 1990
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of trench filling
- Patent number 4,924,284
- Issue date May 8, 1990
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making defect free silicon islands using SEG
- Patent number 4,758,531
- Issue date Jul 19, 1988
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of trench filling
- Patent number 4,745,081
- Issue date May 17, 1988
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar void free isolation structure
- Patent number 4,680,614
- Issue date Jul 14, 1987
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing protuberances at the surface of a semiconductor...
- Patent number 4,671,851
- Issue date Jun 9, 1987
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Shallow trench isolation structure for strained Si on SiGe
- Publication number 20050260825
- Publication date Nov 24, 2005
- International Business Machines Corporation
- Steven John Koester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow trench isolation structure for strained Si on SiGe
- Publication number 20040164373
- Publication date Aug 26, 2004
- Steven John Koester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYNITRIDE SHALLOW TRENCH ISOLATION AND METHOD OF FORMATION
- Publication number 20040106267
- Publication date Jun 3, 2004
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Triple oxide fill for trench isolation
- Publication number 20040029352
- Publication date Feb 12, 2004
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxynitride shallow trench isolation and method of formation
- Publication number 20030015736
- Publication date Jan 23, 2003
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming shallow trench isolation for thin silicon-on-insu...
- Publication number 20030003678
- Publication date Jan 2, 2003
- International Business Machines Corporation
- Klaus Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYNITRIDE SHALLOW TRENCH ISOLATION AND METHOD OF FORMATION
- Publication number 20020177270
- Publication date Nov 28, 2002
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow trench isolation for thin silicon/silicon-on-insulator subs...
- Publication number 20020072196
- Publication date Jun 13, 2002
- Atul C. Ajmera
- H01 - BASIC ELECTRIC ELEMENTS

Klaus D. Beyer

Person

Patents Grantslast 30 patents

Shallow trench isolation structure for strained Si on SiGe

Triple oxide fill for trench isolation

Method of formation of an oxynitride shallow trench isolation

Oxynitride shallow trench isolation and method of formation

Shallow trench isolation for thin silicon/silicon-on-insulator subs...

Method of forming shallow trench isolation for thin silicon-on-insu...

Oxynitride shallow trench isolation and method of formation

Method for removing crevices induced by chemical-mechanical polishing

SOI transistor having a self-aligned body contact

SOI transistor having a self-aligned body contact

Large scale IC personalization method employing air dielectric stru...

Larce scale IC personalization method employing air dielectric stru...

Method of forming a SOI transistor having a self-aligned body contact

Reach-through isolation silicon-on-insulator device

Bonded wafer structure having a buried insulation layer

Thermal dissipation of integrated circuits using diamond paths

Reach-through isolation etching method for silicon-on-insulator dev...

Bonded wafer structure having a buried insulation layer

Method of forming uniformly thin, isolated silicon mesas on an insu...

Method of producing a thin silicon-on-insulator layer

Isolated films using an air dielectric

Buried air dielectric isolation of silicon islands

Sub-layer contact technique using in situ doped amorphous silicon a...

Air-filled isolation trench with chemically vapor deposited silicon...

Chem-mech polishing method for producing coplanar metal/insulator f...

Method of trench filling

Method of making defect free silicon islands using SEG

Method of trench filling

Planar void free isolation structure

Method for removing protuberances at the surface of a semiconductor...

Patents Applicationslast 30 patents

Shallow trench isolation structure for strained Si on SiGe

Shallow trench isolation structure for strained Si on SiGe

OXYNITRIDE SHALLOW TRENCH ISOLATION AND METHOD OF FORMATION

Triple oxide fill for trench isolation

Oxynitride shallow trench isolation and method of formation

Method of forming shallow trench isolation for thin silicon-on-insu...

OXYNITRIDE SHALLOW TRENCH ISOLATION AND METHOD OF FORMATION

Shallow trench isolation for thin silicon/silicon-on-insulator subs...