Koji Arita

Person

Toyama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Current steering element and non-volatile memory element incorporat...
- Patent number 8,759,190
- Issue date Jun 24, 2014
- Panasonic Corporation
- Ryoko Miyanaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method of manufacturing the same
- Patent number 8,563,962
- Issue date Oct 22, 2013
- Panasonic Corporation
- Koji Arita
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor memory device having coplanar surfaces at...
- Patent number 8,537,605
- Issue date Sep 17, 2013
- Panasonic Corporation
- Takumi Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current steering element, memory element, memory, and method of man...
- Patent number 8,482,958
- Issue date Jul 9, 2013
- Panasonic Corporation
- Yukio Hayakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory element, nonvolatile memory device, nonvolatile...
- Patent number 8,445,886
- Issue date May 21, 2013
- Panasonic Corporation
- Satoru Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory element and nonvolatile memory device incorporat...
- Patent number 8,441,060
- Issue date May 14, 2013
- Panasonic Corporation
- Takeki Ninomiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current control element, memory element, and fabrication method the...
- Patent number 8,422,268
- Issue date Apr 16, 2013
- Panasonic Corporation
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance variable element and resistance variable memory device
- Patent number 8,394,669
- Issue date Mar 12, 2013
- Panasonic Corporation
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current steering element, storage element, storage device, and meth...
- Patent number 8,355,274
- Issue date Jan 15, 2013
- Panasonic Corporation
- Koji Arita
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell array, nonvolatile storage device, memory cell, and met...
- Patent number 8,351,244
- Issue date Jan 8, 2013
- Panasonic Corporation
- Takashi Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current rectifying element, memory device incorporating current rec...
- Patent number 8,295,123
- Issue date Oct 23, 2012
- Panasonic Corporation
- Takeshi Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nonvolatile storage element and method for...
- Patent number 7,981,760
- Issue date Jul 19, 2011
- Panasonic Corporation
- Yoshio Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory element array with storing layer formed by resis...
- Patent number 7,960,770
- Issue date Jun 14, 2011
- Panasonic Corporation
- Takumi Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 6,876,030
- Issue date Apr 5, 2005
- Matsushita Electric Industrial Co., Ltd.
- Kiyoshi Uchiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide integrated circuit on silicon germanium substrate
- Patent number 6,864,146
- Issue date Mar 8, 2005
- Symetrix Corporation
- Carlos A. Paz de Araujo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 6,849,521
- Issue date Feb 1, 2005
- Matsushita Electric Industrial Co., Ltd.
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide integrated circuit on silicon germanium substrate
- Patent number 6,639,262
- Issue date Oct 28, 2003
- Symetrix Corporation
- Carlos A. Paz de Araujo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low temperature oxidizing method of making a layered superlattice m...
- Patent number 6,582,972
- Issue date Jun 24, 2003
- Symetrix Corporation
- Vikram Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device, method for driving the same and method...
- Patent number 6,580,632
- Issue date Jun 17, 2003
- Matsushita Electric Industrial Co., Ltd.
- Yasuhiro Shimada
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making ferroelectric FET with polycrystalline crystallogr...
- Patent number 6,537,830
- Issue date Mar 25, 2003
- Symetrix Corporation
- Koji Arita
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fabrication method of capacitor for integrated circuit
- Patent number 6,468,875
- Issue date Oct 22, 2002
- Matsushita Electric Industrial Co., Ltd.
- Yasuhiro Uemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory and method of driving semiconductor memory
- Patent number 6,396,095
- Issue date May 28, 2002
- Matsushita Electric Industrial Co., Ltd.
- Yasuhiro Shimada
- G11 - INFORMATION STORAGE
Information Patent Grant
Method using unreactive gas anneal and low temperature pretreatment...
- Patent number 6,372,518
- Issue date Apr 16, 2002
- Matsushita Electric Industrial Co., Ltd.
- Toru Nasu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a capacitor exhibiting improved moistur...
- Patent number 6,333,528
- Issue date Dec 25, 2001
- Matsushita Electric Industrial Co., Ltd.
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature rapid ramping anneal method for fabricating layered...
- Patent number 6,326,315
- Issue date Dec 4, 2001
- Symetrix Corporation
- Kiyoshi Uchiyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device having capacitor and manufacturing method thereof
- Patent number 6,294,438
- Issue date Sep 25, 2001
- Matsushita Electronics Corporation
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor for integrated circuit and its fabrication method
- Patent number 6,214,660
- Issue date Apr 10, 2001
- Matsushita Electronics Corporation
- Yasuhiro Uemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of capacitor for integrated circuit
- Patent number 6,204,111
- Issue date Mar 20, 2001
- Matsushita Electronics Corporation
- Yasuhiro Uemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a passivation layer which minimizes dif...
- Patent number 6,169,304
- Issue date Jan 2, 2001
- Matsushita Electric Industrial Co., Ltd.
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing capacitor included in semiconductor device...
- Patent number 6,143,597
- Issue date Nov 7, 2000
- Matsushita Electronics Corporation
- Akihiro Matsuda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING VARIABLE RESISTANCE ELEMENT
- Publication number 20130224930
- Publication date Aug 29, 2013
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT STEERING ELEMENT AND NON-VOLATILE MEMORY ELEMENT INCORPORAT...
- Publication number 20130171799
- Publication date Jul 4, 2013
- PANASONIC CORPORATION
- Ryoko Miyanaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120256156
- Publication date Oct 11, 2012
- Koji Arita
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT CONTROL, MEMORY ELEMENT, MEMORY DEVICE, AND PRODUCTION METH...
- Publication number 20120069632
- Publication date Mar 22, 2012
- Yukio Hayakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, NONVOLATILE...
- Publication number 20110284816
- Publication date Nov 24, 2011
- Satoru Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE VARIABLE ELEMENT AND RESISTANCE VARIABLE MEMORY DEVICE
- Publication number 20110220862
- Publication date Sep 15, 2011
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT STEERING ELEMENT, STORAGE ELEMENT, STORAGE DEVICE, AND METH...
- Publication number 20110164447
- Publication date Jul 7, 2011
- Koji Arita
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD TH...
- Publication number 20110114912
- Publication date May 19, 2011
- Takumi Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL ARRAY, NONVOLATILE STORAGE DEVICE, MEMORY CELL, AND MET...
- Publication number 20110103133
- Publication date May 5, 2011
- Takashi Okada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT CONTROL ELEMENT, MEMORY ELEMENT, AND FABRICATION METHOD THE...
- Publication number 20110002155
- Publication date Jan 6, 2011
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE INCORPORAT...
- Publication number 20100308298
- Publication date Dec 9, 2010
- Takeki Ninomiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT RESTRICTING ELEMENT, MEMORY APPARATUS INCORPORATING CURREN...
- Publication number 20100193760
- Publication date Aug 5, 2010
- Takeshi Takagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NONVOLATILE STORAGE ELEMENT AND METHOD FOR...
- Publication number 20100190313
- Publication date Jul 29, 2010
- Yoshio Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY ELEMENT ARRAY AND MANUFACTURING METHOD THEREOF
- Publication number 20100090193
- Publication date Apr 15, 2010
- Takumi Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ELEMENT AND MEMORY APPARATUS
- Publication number 20100061142
- Publication date Mar 11, 2010
- Koji Arita
- G11 - INFORMATION STORAGE
Information Patent Application
Metal oxide integrated circuit on silicon germanium substrate
- Publication number 20040051129
- Publication date Mar 18, 2004
- Symetrix Corporation
- Carlos A. Paz de Araujo
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor memory device
- Publication number 20020036314
- Publication date Mar 28, 2002
- Kiyoshi Uchiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a semiconductor device
- Publication number 20020025654
- Publication date Feb 28, 2002
- Koji Arita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal oxide integrated circuit on silicon germanium substrate
- Publication number 20010054728
- Publication date Dec 27, 2001
- Symetrix Corporation
- Carlos A. Paz de Araujo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor memory device, method for driving the same and method...
- Publication number 20010019497
- Publication date Sep 6, 2001
- Yasuhiro Shimada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitor for integrated circuit and its fabrication method
- Publication number 20010019874
- Publication date Sep 6, 2001
- Matsushita Electronics Corporation
- Yasuhiro Uemoto
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Current steering element and non-volatile memory element incorporat...

Memory device and method of manufacturing the same

Nonvolatile semiconductor memory device having coplanar surfaces at...

Current steering element, memory element, memory, and method of man...

Nonvolatile memory element, nonvolatile memory device, nonvolatile...

Nonvolatile memory element and nonvolatile memory device incorporat...

Current control element, memory element, and fabrication method the...

Resistance variable element and resistance variable memory device

Current steering element, storage element, storage device, and meth...

Memory cell array, nonvolatile storage device, memory cell, and met...

Current rectifying element, memory device incorporating current rec...

Method for manufacturing nonvolatile storage element and method for...

Nonvolatile memory element array with storing layer formed by resis...

Semiconductor memory device

Metal oxide integrated circuit on silicon germanium substrate

Method for manufacturing a semiconductor device

Metal oxide integrated circuit on silicon germanium substrate

Low temperature oxidizing method of making a layered superlattice m...

Semiconductor memory device, method for driving the same and method...

Method of making ferroelectric FET with polycrystalline crystallogr...

Fabrication method of capacitor for integrated circuit

Semiconductor memory and method of driving semiconductor memory

Method using unreactive gas anneal and low temperature pretreatment...

Semiconductor device having a capacitor exhibiting improved moistur...

Low temperature rapid ramping anneal method for fabricating layered...

Semiconductor device having capacitor and manufacturing method thereof

Capacitor for integrated circuit and its fabrication method

Fabrication method of capacitor for integrated circuit

Semiconductor device having a passivation layer which minimizes dif...

Method of manufacturing capacitor included in semiconductor device...

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING VARIABLE RESISTANCE ELEMENT

CURRENT STEERING ELEMENT AND NON-VOLATILE MEMORY ELEMENT INCORPORAT...

MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

CURRENT CONTROL, MEMORY ELEMENT, MEMORY DEVICE, AND PRODUCTION METH...

NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, NONVOLATILE...

RESISTANCE VARIABLE ELEMENT AND RESISTANCE VARIABLE MEMORY DEVICE

CURRENT STEERING ELEMENT, STORAGE ELEMENT, STORAGE DEVICE, AND METH...

NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD TH...

MEMORY CELL ARRAY, NONVOLATILE STORAGE DEVICE, MEMORY CELL, AND MET...

CURRENT CONTROL ELEMENT, MEMORY ELEMENT, AND FABRICATION METHOD THE...

NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE INCORPORAT...

CURRENT RESTRICTING ELEMENT, MEMORY APPARATUS INCORPORATING CURREN...

METHOD FOR MANUFACTURING NONVOLATILE STORAGE ELEMENT AND METHOD FOR...

NONVOLATILE MEMORY ELEMENT ARRAY AND MANUFACTURING METHOD THEREOF

MEMORY ELEMENT AND MEMORY APPARATUS

Metal oxide integrated circuit on silicon germanium substrate

Semiconductor memory device

Method for manufacturing a semiconductor device

Metal oxide integrated circuit on silicon germanium substrate

Semiconductor memory device, method for driving the same and method...

Capacitor for integrated circuit and its fabrication method