Lawrence N. Brigham

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor having a deposited dual-layer spacer structure
- Patent number 6,720,631
- Issue date Apr 13, 2004
- Intel Corporation
- Lawrence N. Brigham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon/amorphous silicon composite gate electrode
- Patent number 6,703,672
- Issue date Mar 9, 2004
- Intel Corporation
- Lawrence N. Brigham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded channel transistor structure with embedded source/drain ju...
- Patent number 6,380,010
- Issue date Apr 30, 2002
- Intel Corporation
- Lawrence N. Brigham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shielded channel transistor structure with embedded source/drain ju...
- Patent number 6,274,913
- Issue date Aug 14, 2001
- Intel Corporation
- Lawrence N. Brigham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a MOS transistor with a raised source/drain e...
- Patent number 6,121,100
- Issue date Sep 19, 2000
- Intel Corporation
- Ebrahim Andideh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High tensile nitride layer
- Patent number 6,046,494
- Issue date Apr 4, 2000
- Intel Corporation
- Lawrence N. Brigham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a polysilicon/amorphous silicon composite gate e...
- Patent number 6,017,819
- Issue date Jan 25, 2000
- Intel Corporation
- Lawrence N. Brigham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon polish for patterning improvement
- Patent number 5,911,111
- Issue date Jun 8, 1999
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturable dielectric formed using multiple oxidation and annea...
- Patent number 5,891,809
- Issue date Apr 6, 1999
- Intel Corporation
- Robert S. K. Chau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a transistor having a deposited dual-layer spacer...
- Patent number 5,714,413
- Issue date Feb 3, 1998
- Intel Corporation
- Lawrence N. Brigham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High tensile nitride layer
- Patent number 5,633,202
- Issue date May 27, 1997
- Intel Corporation
- Lawrence N. Brigham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor field oxidation process
- Patent number 5,091,332
- Issue date Feb 25, 1992
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR HAVING A DEPOSITED DUAL-LAYER SPACER STRUCTURE
- Publication number 20010042894
- Publication date Nov 22, 2001
- LAWRENCE N. BRIGHAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shielded channel transistor structure with embedded source/drain ju...
- Publication number 20010036693
- Publication date Nov 1, 2001
- Lawrence N. Brigham
- H01 - BASIC ELECTRIC ELEMENTS

Lawrence N. Brigham

Person

Patents Grantslast 30 patents

Transistor having a deposited dual-layer spacer structure

Polysilicon/amorphous silicon composite gate electrode

Shielded channel transistor structure with embedded source/drain ju...

Shielded channel transistor structure with embedded source/drain ju...

Method of fabricating a MOS transistor with a raised source/drain e...

High tensile nitride layer

Method for forming a polysilicon/amorphous silicon composite gate e...

Polysilicon polish for patterning improvement

Manufacturable dielectric formed using multiple oxidation and annea...

Method of making a transistor having a deposited dual-layer spacer...

High tensile nitride layer

Semiconductor field oxidation process

Patents Applicationslast 30 patents

TRANSISTOR HAVING A DEPOSITED DUAL-LAYER SPACER STRUCTURE

Shielded channel transistor structure with embedded source/drain ju...