Makio Iida

Person

Ichinomiya, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Power MOS transistor for absorbing surge current
- Patent number 6,831,331
- Issue date Dec 14, 2004
- Denso Corporation
- Yasuhiro Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having thin film resistor and method of produc...
- Patent number 6,287,933
- Issue date Sep 11, 2001
- Nippondenso Co., Ltd.
- Makio Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having oblique portion as reflection
- Patent number 6,242,792
- Issue date Jun 5, 2001
- Denso Corporation
- Shoji Miura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,242,787
- Issue date Jun 5, 2001
- Denso Corporation
- Yoshiaki Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate type field effect transistor and method of manufactu...
- Patent number 6,146,947
- Issue date Nov 14, 2000
- Nippondenso Co., Ltd.
- Naoto Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Design for a semiconductor device having elements isolated by insul...
- Patent number 6,104,078
- Issue date Aug 15, 2000
- Denso Corporation
- Makio Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,104,076
- Issue date Aug 15, 2000
- Denso Corporation
- Yoshiaki Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device having thin-film resistor
- Patent number 5,989,970
- Issue date Nov 23, 1999
- Nippondenso Co., Ltd.
- Makoto Ohkawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate type field effect transistor and method of manufactu...
- Patent number 5,753,943
- Issue date May 19, 1998
- Nippondenso Co., Ltd.
- Naoto Okabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable non-volatile memory cell
- Patent number 5,747,846
- Issue date May 5, 1998
- Nippondenso Co., Ltd.
- Makio Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High withstand voltage type semiconductor device having an isolatio...
- Patent number 5,644,157
- Issue date Jul 1, 1997
- Nippondenso Co., Ltd.
- Makio Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device equipped with a heat-fusible thin film resisto...
- Patent number 5,625,218
- Issue date Apr 29, 1997
- Nippondenso Co., Ltd.
- Hideya Yamadera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolated type semiconductor device provided with bipolar...
- Patent number 5,592,015
- Issue date Jan 7, 1997
- Nippondenso Co., Ltd.
- Makio Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric isolated type semiconductor device
- Patent number 5,557,134
- Issue date Sep 17, 1996
- Nippondenso Co., Ltd.
- Takayuki Sugisaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with thin film resistor having reduced film th...
- Patent number 5,525,831
- Issue date Jun 11, 1996
- Nippondenso Co., Ltd.
- Makoto Ohkawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing thin film resistors
- Patent number 5,503,878
- Issue date Apr 2, 1996
- Nippondenso Co., Ltd.
- Mikimasa Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device provided with isolation region
- Patent number 5,449,946
- Issue date Sep 12, 1995
- Nippondenso Co., Ltd.
- Toshio Sakakibara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor device using a trimmable thin-film r...
- Patent number 5,284,794
- Issue date Feb 8, 1994
- Nippondenso Co., Ltd.
- Yoshihiko Isobe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric film
- Patent number 5,225,286
- Issue date Jul 6, 1993
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Hisayoshi Fujikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and process for producing same
- Patent number 5,187,559
- Issue date Feb 16, 1993
- Nippondenso Co., Ltd.
- Yoshihiko Isobe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20020017697
- Publication date Feb 14, 2002
- DENSO Corporation
- Yasuhiro Kitamura
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Power MOS transistor for absorbing surge current

Semiconductor device having thin film resistor and method of produc...

Semiconductor device having oblique portion as reflection

Semiconductor device and manufacturing method thereof

Insulated gate type field effect transistor and method of manufactu...

Design for a semiconductor device having elements isolated by insul...

Semiconductor device and manufacturing method thereof

Method for fabricating semiconductor device having thin-film resistor

Insulated gate type field effect transistor and method of manufactu...

Programmable non-volatile memory cell

High withstand voltage type semiconductor device having an isolatio...

Semiconductor device equipped with a heat-fusible thin film resisto...

Dielectric isolated type semiconductor device provided with bipolar...

Dielectric isolated type semiconductor device

Semiconductor device with thin film resistor having reduced film th...

Method of preparing thin film resistors

Semiconductor device provided with isolation region

Method of making semiconductor device using a trimmable thin-film r...

Dielectric film

Semiconductor device and process for producing same

Patents Applicationslast 30 patents

Semiconductor device and manufacturing method thereof