Masao Yamane

Person

Kokubunji, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 8,169,008
- Issue date May 1, 2012
- Murata Manufacturing Co., Ltd.
- Masao Yamane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,022,537
- Issue date Sep 20, 2011
- Renesas Electronics Corporation
- Hitoshi Akamine
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device
- Patent number 7,838,914
- Issue date Nov 23, 2010
- Renesas Electronics Corporation
- Masao Yamane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,439,622
- Issue date Oct 21, 2008
- Renesas Technology Corp.
- Hitoshi Akamine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,307,298
- Issue date Dec 11, 2007
- Renesas Technology Corp.
- Masao Yamane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and a method of manufacturing the same
- Patent number 7,256,433
- Issue date Aug 14, 2007
- Renesas Technology Corp.
- Atsushi Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,141,876
- Issue date Nov 28, 2006
- Renesas Technology Corp.
- Hitoshi Akamine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor protection device
- Patent number 7,045,877
- Issue date May 16, 2006
- Renesas Technology Corp.
- Yasunari Umemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,992,528
- Issue date Jan 31, 2006
- Renesas Technology Corp.
- Hitoshi Akamine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power amplifier system and mobile communication terminal device
- Patent number 6,861,905
- Issue date Mar 1, 2005
- Renesas Technology Corp.
- Atsushi Kurokawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Compound semiconductor having a doped layer between the gate and an...
- Patent number 6,787,817
- Issue date Sep 7, 2004
- Renesas Technology Corporation
- Hiroyuki Takazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple transistors having a common gate pad between first group o...
- Patent number 6,765,268
- Issue date Jul 20, 2004
- Renesas Technology Corp.
- Hitoshi Akamine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,743,691
- Issue date Jun 1, 2004
- Renesas Technology Corp.
- Atsushi Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power amplification system and mobile radio communication terminal
- Patent number 6,708,022
- Issue date Mar 16, 2004
- Renesas Technology Corporation
- Atsushi Kurokawa
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Power amplifier system and mobile communication terminal device
- Patent number 6,678,507
- Issue date Jan 13, 2004
- Hitachi, Ltd.
- Atsushi Kurokawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Hetero-junction bipolar transistor having a dummy electrode
- Patent number 6,639,257
- Issue date Oct 28, 2003
- Hitachi, Ltd.
- Atsushi Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,573,540
- Issue date Jun 3, 2003
- Hitachi, Ltd.
- Atsushi Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,403,991
- Issue date Jun 11, 2002
- Hitachi, Ltd.
- Atsushi Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low distortion switch
- Patent number 5,774,792
- Issue date Jun 30, 1998
- Hitachi, Ltd.
- Satoshi Tanaka
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device with reduced tunnel resistance and circuitry u...
- Patent number 5,548,138
- Issue date Aug 20, 1996
- Hitachi, Ltd.
- Takuma Tanimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a heterojunction and a two dimensional...
- Patent number 5,381,027
- Issue date Jan 10, 1995
- Hitachi, Ltd.
- Toshiyuki Usagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a two-dimensional electron gas as an ac...
- Patent number 5,258,631
- Issue date Nov 2, 1993
- Hitachi, Ltd.
- Toshiyuki Usagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor structure and process for making same
- Patent number 4,914,488
- Issue date Apr 3, 1990
- Hitachi, Ltd.
- Masao Yamane
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20110031533
- Publication date Feb 10, 2011
- Renesas Electronics Corporation
- Masao Yamane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090008774
- Publication date Jan 8, 2009
- RENESAS TECHNOLOGY CORP.
- Hitoshi Akamine
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device
- Publication number 20080073671
- Publication date Mar 27, 2008
- RENESAS TECHNOLOGY CORP.
- Masao Yamane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND A METHOD OF MANUFACTURING THE SAME
- Publication number 20070257332
- Publication date Nov 8, 2007
- Atsushi Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20070034946
- Publication date Feb 15, 2007
- Hitoshi Akamine
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device and manufacturing the same
- Publication number 20060157825
- Publication date Jul 20, 2006
- Yasunari Umemoto
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device
- Publication number 20060076620
- Publication date Apr 13, 2006
- RENESAS TECHNOLOGY CORP.
- Hitoshi Akamine
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device
- Publication number 20050116253
- Publication date Jun 2, 2005
- Masao Yamane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040232485
- Publication date Nov 25, 2004
- RENESAS TECHNOLOGY CORP.
- Hitoshi Akamine
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Bipolar transistor and a method of manufacturing the same
- Publication number 20040212044
- Publication date Oct 28, 2004
- Atsushi Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power amplifier system and mobile communication terminal device
- Publication number 20040155711
- Publication date Aug 12, 2004
- RENESAS TECHNOLOGY CORPORATION
- Atsushi Kurokawa
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device and manufacturing the same
- Publication number 20040065900
- Publication date Apr 8, 2004
- Hitachi, Ltd.
- Yasunari Umemoto
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device and the method of manufacturing thereof
- Publication number 20030168672
- Publication date Sep 11, 2003
- Hiroyuki Takazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20030102494
- Publication date Jun 5, 2003
- Hitachi, Ltd.
- Hitoshi Akamine
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20020117684
- Publication date Aug 29, 2002
- Hitachi, Ltd.
- Atsushi Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20020058375
- Publication date May 16, 2002
- Hitachi, Ltd.
- Atsushi Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20020055221
- Publication date May 9, 2002
- Hitachi, Ltd.
- Atsushi Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS

Masao Yamane

Person

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device

Semiconductor device

Semiconductor device

Semiconductor device

Bipolar transistor and a method of manufacturing the same

Semiconductor device

Semiconductor protection device

Semiconductor device

Power amplifier system and mobile communication terminal device

Compound semiconductor having a doped layer between the gate and an...

Multiple transistors having a common gate pad between first group o...

Semiconductor device and method for fabricating the same

Power amplification system and mobile radio communication terminal

Power amplifier system and mobile communication terminal device

Hetero-junction bipolar transistor having a dummy electrode

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Low distortion switch

Semiconductor device with reduced tunnel resistance and circuitry u...

Semiconductor device having a heterojunction and a two dimensional...

Semiconductor device having a two-dimensional electron gas as an ac...

Compound semiconductor structure and process for making same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Semiconductor device

BIPOLAR TRANSISTOR AND A METHOD OF MANUFACTURING THE SAME

Semiconductor device

Semiconductor device and manufacturing the same

Semiconductor device

Semiconductor device

Semiconductor device

Bipolar transistor and a method of manufacturing the same

Power amplifier system and mobile communication terminal device

Semiconductor device and manufacturing the same

Semiconductor device and the method of manufacturing thereof

Semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same