Mike Briere

Person

Manhattan Beach, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated III-nitride and silicon device
- Patent number 11,605,628
- Issue date Mar 14, 2023
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having graded transition bodies
- Patent number 10,269,903
- Issue date Apr 23, 2019
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V device structure with variable impurity concentration
- Patent number 10,084,047
- Issue date Sep 25, 2018
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming highly conductive source/drain contacts in III-Nitride tran...
- Patent number 10,074,729
- Issue date Sep 11, 2018
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor structures with strain absorbing interlayers
- Patent number 9,837,495
- Issue date Dec 5, 2017
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V device structure having a selectively reduced impurity...
- Patent number 9,831,312
- Issue date Nov 28, 2017
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor device
- Patent number 9,793,259
- Issue date Oct 17, 2017
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating III-nitride semiconductor dies
- Patent number 9,721,791
- Issue date Aug 1, 2017
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated power device
- Patent number 9,691,889
- Issue date Jun 27, 2017
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V transistor with semiconductor field plate
- Patent number 9,673,286
- Issue date Jun 6, 2017
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power converter with split voltage supply
- Patent number 9,577,612
- Issue date Feb 21, 2017
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Group III-V device with a selectively modified impurity concentration
- Patent number 9,564,492
- Issue date Feb 7, 2017
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with elevated drain termination
- Patent number 9,564,498
- Issue date Feb 7, 2017
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode III-nitride transistor
- Patent number 9,530,877
- Issue date Dec 27, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active area shaping of III-nitride devices utilizing a field plate...
- Patent number 9,525,052
- Issue date Dec 20, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite device with integrated diode
- Patent number 9,502,398
- Issue date Nov 22, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preventing delamination and cracks in fabrication of group III-V de...
- Patent number 9,502,296
- Issue date Nov 22, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preventing delamination and cracks in group III-V wafers
- Patent number 9,490,172
- Issue date Nov 8, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DC/DC converter with III-nitride switches
- Patent number 9,461,463
- Issue date Oct 4, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor package with heat spreader
- Patent number 9,449,899
- Issue date Sep 20, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V device with a selectively reduced impurity concentration
- Patent number 9,437,685
- Issue date Sep 6, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated III-nitride D-mode HFET with cascoded pair half bridge
- Patent number 9,406,674
- Issue date Aug 2, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Transistor having increased breakdown voltage
- Patent number 9,379,231
- Issue date Jun 28, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly conductive source/drain contacts in III-nitride transistors
- Patent number 9,378,965
- Issue date Jun 28, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V and group IV composite switch
- Patent number 9,362,267
- Issue date Jun 7, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion mode group III-V transistor with high voltage group IV en...
- Patent number 9,349,715
- Issue date May 24, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Stacked composite device including a group III-V transistor and a g...
- Patent number 9,343,440
- Issue date May 17, 2016
- Infineon Technologies Americas Corp.
- Tim McDonald
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Dual-gated group III-V merged transistor
- Patent number 9,343,562
- Issue date May 17, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active area shaping of III-nitride devices utilizing a source-side...
- Patent number 9,318,592
- Issue date Apr 19, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated power device with III-nitride half bridges
- Patent number 9,312,374
- Issue date Apr 12, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
III-Nitride Device
- Publication number 20210320103
- Publication date Oct 14, 2021
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Device Structure with Variable Impurity Concentration
- Publication number 20180097072
- Publication date Apr 5, 2018
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Graded Transition Bodies
- Publication number 20180083106
- Publication date Mar 22, 2018
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Device Structure Having a Selectively Reduced Impurity...
- Publication number 20170141192
- Publication date May 18, 2017
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating III-Nitride Semiconductor Dies
- Publication number 20170076937
- Publication date Mar 16, 2017
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming Highly Conductive Source/Drain Contacts in III-Nitride Tran...
- Publication number 20160276461
- Publication date Sep 22, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Transistor with Solderable Front Metal
- Publication number 20160211337
- Publication date Jul 21, 2016
- Infineon Technologies Americas Corp.
- Chuan Cheah
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Integrated Power Device
- Publication number 20160211359
- Publication date Jul 21, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Preventing Delamination and Cracks in Fabrication of Group III-V De...
- Publication number 20160079122
- Publication date Mar 17, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Preventing Delamination and Cracks in Group III-V Wafers
- Publication number 20160071768
- Publication date Mar 10, 2016
- Infineon Technologies Americas Corp.
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Device with a Selectively Modified Impurity Concentration
- Publication number 20150380497
- Publication date Dec 31, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of III-Nitride Power Semiconductor Device
- Publication number 20150357182
- Publication date Dec 10, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Device Including a Shield Plate
- Publication number 20150340483
- Publication date Nov 26, 2015
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement Mode III-Nitride Transistor
- Publication number 20150333165
- Publication date Nov 19, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Device with Integrated Diode
- Publication number 20150325566
- Publication date Nov 12, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor with Elevated Drain Termination
- Publication number 20150295054
- Publication date Oct 15, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Converter with Split Voltage Supply
- Publication number 20150207495
- Publication date Jul 23, 2015
- International Rectifier Corporation
- Michael A. Briere
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Dual-Gated Group III-V Merged Transistor
- Publication number 20150162424
- Publication date Jun 11, 2015
- International Re'ctifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Voltage Converter with Monolithically Integrated Level...
- Publication number 20150162832
- Publication date Jun 11, 2015
- International Rectifier Corporation
- Michael A. Briere
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Composite Power Device with ESD Protection Clamp
- Publication number 20150162321
- Publication date Jun 11, 2015
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Transistor with Semiconductor Field Plate
- Publication number 20150155358
- Publication date Jun 4, 2015
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Structures with Strain Absorbing Interlayers
- Publication number 20150155357
- Publication date Jun 4, 2015
- International Rectifier Corpoation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V Device Including a Buffer Termination Body
- Publication number 20150115327
- Publication date Apr 30, 2015
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Device Including Silicon and III-Nitride Semiconductor D...
- Publication number 20150097196
- Publication date Apr 9, 2015
- International Rectifier Corporation
- Mike Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of III-Nitride Semiconductor Device and Related Structures
- Publication number 20150037965
- Publication date Feb 5, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Device with Reduced Electric Field Betwee...
- Publication number 20150021619
- Publication date Jan 22, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monolithic Composite III-Nitride Transistor with High Voltage Group...
- Publication number 20150014740
- Publication date Jan 15, 2015
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE Device with Solderable Front Metal
- Publication number 20150014703
- Publication date Jan 15, 2015
- International Rectifier Corporation
- Chuan Cheah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated III-Nitride D-Mode HFET with Cascoded Pair Half Bridge
- Publication number 20150014698
- Publication date Jan 15, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Device with Reduced Electric Field
- Publication number 20150014701
- Publication date Jan 15, 2015
- International Rectifier Corporation
- Michael A. Briere
- H01 - BASIC ELECTRIC ELEMENTS

Mike Briere

Person

Patents Grantslast 30 patents

Integrated III-nitride and silicon device

Semiconductor structure having graded transition bodies

Group III-V device structure with variable impurity concentration

Forming highly conductive source/drain contacts in III-Nitride tran...

III-nitride semiconductor structures with strain absorbing interlayers

Group III-V device structure having a selectively reduced impurity...

Integrated semiconductor device

Method of fabricating III-nitride semiconductor dies

Integrated power device

Group III-V transistor with semiconductor field plate

Power converter with split voltage supply

Group III-V device with a selectively modified impurity concentration

Transistor with elevated drain termination

Enhancement mode III-nitride transistor

Active area shaping of III-nitride devices utilizing a field plate...

Composite device with integrated diode

Preventing delamination and cracks in fabrication of group III-V de...

Method for preventing delamination and cracks in group III-V wafers

DC/DC converter with III-nitride switches

Semiconductor package with heat spreader

Group III-V device with a selectively reduced impurity concentration

Integrated III-nitride D-mode HFET with cascoded pair half bridge

Transistor having increased breakdown voltage

Highly conductive source/drain contacts in III-nitride transistors

Group III-V and group IV composite switch

Depletion mode group III-V transistor with high voltage group IV en...

Stacked composite device including a group III-V transistor and a g...

Dual-gated group III-V merged transistor

Active area shaping of III-nitride devices utilizing a source-side...

Integrated power device with III-nitride half bridges

Patents Applicationslast 30 patents

III-Nitride Device

Group III-V Device Structure with Variable Impurity Concentration

Semiconductor Structure Having Graded Transition Bodies

Group III-V Device Structure Having a Selectively Reduced Impurity...

Method of Fabricating III-Nitride Semiconductor Dies

Forming Highly Conductive Source/Drain Contacts in III-Nitride Tran...

III-Nitride Transistor with Solderable Front Metal

Integrated Power Device

Preventing Delamination and Cracks in Fabrication of Group III-V De...

Method for Preventing Delamination and Cracks in Group III-V Wafers

Group III-V Device with a Selectively Modified Impurity Concentration

Fabrication of III-Nitride Power Semiconductor Device

Group III-V Device Including a Shield Plate

Enhancement Mode III-Nitride Transistor

Composite Device with Integrated Diode

Transistor with Elevated Drain Termination

Power Converter with Split Voltage Supply

Dual-Gated Group III-V Merged Transistor

Group III-V Voltage Converter with Monolithically Integrated Level...

Composite Power Device with ESD Protection Clamp

Group III-V Transistor with Semiconductor Field Plate

III-Nitride Semiconductor Structures with Strain Absorbing Interlayers

Group III-V Device Including a Buffer Termination Body

Integrated Device Including Silicon and III-Nitride Semiconductor D...

Fabrication of III-Nitride Semiconductor Device and Related Structures

III-Nitride Semiconductor Device with Reduced Electric Field Betwee...

Monolithic Composite III-Nitride Transistor with High Voltage Group...

III-NITRIDE Device with Solderable Front Metal

Integrated III-Nitride D-Mode HFET with Cascoded Pair Half Bridge

III-Nitride Semiconductor Device with Reduced Electric Field