Mishel Matloubian

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing semiconductor on insulator transistor with...
- Patent number 5,399,519
- Issue date Mar 21, 1995
- Texas Instruments Incorporated
- Mishel Matloubian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor on insulator transistor
- Patent number 5,283,457
- Issue date Feb 1, 1994
- Texas Instruments Incorporated
- Mishel Matloubian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-on insulator transistor with internal body node to source n...
- Patent number 5,144,390
- Issue date Sep 1, 1992
- Texas Instruments Incorporated
- Mishel Matloubian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOS transistor having inversion layer source/drain contacts
- Patent number 5,047,361
- Issue date Sep 10, 1991
- Texas Instruments Incorporated
- Mishel Matloubian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor with improved radiation hardness
- Patent number 5,026,656
- Issue date Jun 25, 1991
- Texas Instruments Incorporated
- Mishel Matloubian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOS transistor having inversion layer source/drain contacts
- Patent number 4,994,869
- Issue date Feb 19, 1991
- Texas Instruments Incorporated
- Mishel Matloubian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor with improved radiation hardness
- Patent number 4,974,051
- Issue date Nov 27, 1990
- Texas Instruments Incorporated
- Mishel Matloubian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin oxide sidewall insulators for silicon-over-insulator transistors
- Patent number 4,956,307
- Issue date Sep 11, 1990
- Texas Instruments, Incorporated
- Gordon P. Pollack
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Masking scheme for silicon dioxide mesa formation
- Patent number 4,950,618
- Issue date Aug 21, 1990
- Texas Instruments, Incorporated
- Ravishankar Sundaresan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making silicon on insalator material using oxygen implant...
- Patent number 4,863,878
- Issue date Sep 5, 1989
- Texas Instruments Incorporated
- Larry R. Hite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall channel stop process
- Patent number 4,753,896
- Issue date Jun 28, 1988
- Texas Instruments Incorporated
- Mishel Matloubian
- H01 - BASIC ELECTRIC ELEMENTS

Mishel Matloubian

Person

Patents Grantslast 30 patents

Method of manufacturing semiconductor on insulator transistor with...

Semiconductor on insulator transistor

Silicon-on insulator transistor with internal body node to source n...

NMOS transistor having inversion layer source/drain contacts

MOS transistor with improved radiation hardness

NMOS transistor having inversion layer source/drain contacts

MOS transistor with improved radiation hardness

Thin oxide sidewall insulators for silicon-over-insulator transistors

Masking scheme for silicon dioxide mesa formation

Method of making silicon on insalator material using oxygen implant...

Sidewall channel stop process