Mustafa Pinarbasi

Person

Morgan Hills, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Precessional spin current structure with non-magnetic insertion lay...
- Patent number 12,075,706
- Issue date Aug 27, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a magnetic random-access memory device usi...
- Patent number 12,069,957
- Issue date Aug 20, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Grant
High retention storage layer using ultra-low RA MgO process in perp...
- Patent number 11,925,125
- Issue date Mar 5, 2024
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction element with RU hard mask for use in magne...
- Patent number 11,723,217
- Issue date Aug 8, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi terminal device stack formation methods
- Patent number 11,626,559
- Issue date Apr 11, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Thomas Boone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi terminal device stack systems and methods
- Patent number 11,621,293
- Issue date Apr 4, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Thomas Boone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density spin orbit torque magnetic random access memory
- Patent number 11,600,769
- Issue date Mar 7, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of manufacture precessional spin current magnetic tunnel ju...
- Patent number 11,545,620
- Issue date Jan 3, 2023
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precessional spin current structure for MRAM
- Patent number 11,355,699
- Issue date Jun 7, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a magnetic random-access memory device usi...
- Patent number 11,329,217
- Issue date May 10, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory chip having nvm class and SRAM class MRAM elements...
- Patent number 11,329,099
- Issue date May 10, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction element with Ru hard mask for use in magne...
- Patent number 11,329,100
- Issue date May 10, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precessional spin current structure for magnetic random access memo...
- Patent number 11,283,010
- Issue date Mar 22, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Grant
Precessional spin current structure with nonmagnetic insertion laye...
- Patent number 11,271,149
- Issue date Mar 8, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Grant
High retention storage layer using ultra-low RA MgO process in perp...
- Patent number 11,264,557
- Issue date Mar 1, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High retention multi-level-series magnetic random-access memory
- Patent number 11,094,359
- Issue date Aug 17, 2021
- Spin Memory, Inc.
- Kadriye Deniz Bozdag
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi terminal device stack formation methods
- Patent number 10,971,680
- Issue date Apr 6, 2021
- Spin Memory, Inc.
- Thomas Boone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing magnetic memory element with post pillar f...
- Patent number 10,916,696
- Issue date Feb 9, 2021
- Spin Memory, Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a magnetic memory element using Ru and dia...
- Patent number 10,903,002
- Issue date Jan 26, 2021
- Spin Memory, Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having overlapping magnetic tunnel junctions in compl...
- Patent number 10,886,330
- Issue date Jan 5, 2021
- Spin Memory, Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction memory element with improved reference lay...
- Patent number 10,879,454
- Issue date Dec 29, 2020
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic anisotropy interface tunnel junction devices...
- Patent number 10,840,436
- Issue date Nov 17, 2020
- Spin Memory, Inc.
- Bartlomiej Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction (MTJ) fabrication methods and systems
- Patent number 10,840,439
- Issue date Nov 17, 2020
- Spin Memory, Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precessional spin current magnetic tunnel junction devices and meth...
- Patent number 10,784,439
- Issue date Sep 22, 2020
- Spin Memory, Inc.
- Bartlomiej Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polishing stop layer(s) for processing arrays of semiconductor elem...
- Patent number 10,777,736
- Issue date Sep 15, 2020
- Spin Memory, Inc.
- Mustafa Michael Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing high annealing temperature perpendicular ma...
- Patent number 10,734,574
- Issue date Aug 4, 2020
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precessional spin current structure with high in-plane magnetizatio...
- Patent number 10,672,976
- Issue date Jun 2, 2020
- Spin Memory, Inc.
- Mustafa Michael Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precessional spin current structure with non-magnetic insertion lay...
- Patent number 10,665,777
- Issue date May 26, 2020
- Spin Memory, Inc.
- Bartlomiej Adam Kardasz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Perpendicular magnetic tunnel junction retention and endurance impr...
- Patent number 10,651,370
- Issue date May 12, 2020
- Spin Memory, Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell having magnetic tunnel junction and thermal stability e...
- Patent number 10,643,680
- Issue date May 5, 2020
- Spin Memory, Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING A MAGNETIC RANDOM-ACCESS MEMORY DEVICE USI...
- Publication number 20220246842
- Publication date Aug 4, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT WITH RU HARD MASK FOR USE IN MAGNE...
- Publication number 20220238601
- Publication date Jul 28, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH DENSITY SPIN ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20220223787
- Publication date Jul 14, 2022
- SPIN (assignment for benefit of creditors), LLC
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECESSIONAL SPIN CURRENT STRUCTURE WITH NON-MAGNETIC INSERTION LAY...
- Publication number 20220165942
- Publication date May 26, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam KARDASZ
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH RETENTION STORAGE LAYER USING ULTRA-LOW RA MgO PROCESS IN PERP...
- Publication number 20220149267
- Publication date May 12, 2022
- Integrated Silicon Solution, (Cayman) Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI TERMINAL DEVICE STACK FORMATION METHODS
- Publication number 20210399213
- Publication date Dec 23, 2021
- SPIN (assignment for benefit of creditors), LLC
- Thomas BOONE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MANUFACTURE PRECESSIONAL SPIN CURRENT MAGNETIC TUNNEL JU...
- Publication number 20200411752
- Publication date Dec 31, 2020
- Spin Memory, Inc.
- Bartlomiej KARDASZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING MAGNETIC MEMORY ELEMENT WITH POST PILLAR F...
- Publication number 20200350493
- Publication date Nov 5, 2020
- Spin Memory, Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MANUFACTURING A SELF-ALIGNED MAGNETIC MEMORY ELEMENT WIT...
- Publication number 20200343043
- Publication date Oct 29, 2020
- Spin Memory, Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A MAGNETIC MEMORY ELEMENT USING RU AND DIA...
- Publication number 20200343042
- Publication date Oct 29, 2020
- Spin Memory, Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT WITH RU HARD MASK FOR USE IN MAGNE...
- Publication number 20200343298
- Publication date Oct 29, 2020
- Spin Memory, Inc.
- Mustafa Pinarbasi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RETENTION MULTI-LEVEL-SERIES MAGNETIC RANDOM-ACCESS MEMORY
- Publication number 20200243124
- Publication date Jul 30, 2020
- Spin Memory, Inc.
- Kadriye Deniz Bozdag
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MANUFACTURING A MAGNETIC RANDOM-ACCESS MEMORY DEVICE USI...
- Publication number 20200243757
- Publication date Jul 30, 2020
- Spin Memory, Inc.
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Application
Precessional Spin Current Structure for MRAM
- Publication number 20200220070
- Publication date Jul 9, 2020
- Spin Memory, Inc.
- Mustafa PINARBASI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECESSIONAL SPIN CURRENT STRUCTURE WITH NON-MAGNETIC INSERTION LAY...
- Publication number 20200220074
- Publication date Jul 9, 2020
- Spin Memory, Inc.
- Bartlomiej Adam KARDASZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI TERMINAL DEVICE STACK SYSTEMS AND METHODS
- Publication number 20200105829
- Publication date Apr 2, 2020
- Spin Memory, Inc.
- Thomas BOONE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI TERMINAL DEVICE STACK FORMATION METHODS
- Publication number 20200106006
- Publication date Apr 2, 2020
- Spin Memory, Inc.
- Thomas BOONE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECESSIONAL SPIN CURRENT STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMO...
- Publication number 20200083442
- Publication date Mar 12, 2020
- Spin Memory, Inc.
- Jorge Vasquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION MEMORY ELEMENT WITH IMPROVED REFERENCE LAY...
- Publication number 20200052034
- Publication date Feb 13, 2020
- Spin Transfer Technologies, Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Application
Method of Manufacturing High Annealing Temperature Perpendicular Ma...
- Publication number 20200035914
- Publication date Jan 30, 2020
- Spin Memory, Inc.
- Bartlomiej Adam KARDASZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR CREATING A HIGH DENSITY MAGNETIC TUNNEL JUNCTION ARRAY...
- Publication number 20190371997
- Publication date Dec 5, 2019
- Spin Memory, Inc.
- Pradeep Manandhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A MAGNETIC MEMORY ELEMENT ARRAY USING HIGH...
- Publication number 20190214553
- Publication date Jul 11, 2019
- Spin Memory, Inc.
- Marcin Gajek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICE WITH SKYRMIONIC ENHAN...
- Publication number 20190214548
- Publication date Jul 11, 2019
- Spin Memory, Inc.
- Manfred Ernst Schabes
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC MEMORY CHIP HAVING NVM CLASS AND SRAM CLASS MRAM ELEMENTS...
- Publication number 20190206929
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Mustafa Pinarbasi
- G11 - INFORMATION STORAGE
Information Patent Application
PROCESS FOR CREATING DENSE PILLARS USING MULTIPLE EXPOSURES FOR MRA...
- Publication number 20190207082
- Publication date Jul 4, 2019
- Spin Transfer Technologies, Inc.
- Prachi Shrivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICE WITH PRECESSIONAL SPI...
- Publication number 20190207088
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Manfred Ernst Schabes
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY WITH REDUCED INTERNAL OPERATING TEMPE...
- Publication number 20190207090
- Publication date Jul 4, 2019
- Spin Memory, Inc.
- Manfred Ernst Schabes
- G11 - INFORMATION STORAGE
Information Patent Application
Methods for Manufacturing a Perpendicular Magnetic Tunnel Junction...
- Publication number 20190207086
- Publication date Jul 4, 2019
- Spin Transfer Technologies, Inc.
- Bartlomiej Adam Kardasz
- G11 - INFORMATION STORAGE
Information Patent Application
Method for Manufacturing a Magnetic Memory Device by Pre-Patterning...
- Publication number 20190207104
- Publication date Jul 4, 2019
- Jorge Vasquez
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF MANUFACTURING MAGNETIC TUNNEL JUNCTION DEVICES
- Publication number 20190207105
- Publication date Jul 4, 2019
- Spin Transfer Technologies, Inc.
- Thomas BOONE
- H01 - BASIC ELECTRIC ELEMENTS

Mustafa Pinarbasi

Person

Patents Grantslast 30 patents

Precessional spin current structure with non-magnetic insertion lay...

Method for manufacturing a magnetic random-access memory device usi...

High retention storage layer using ultra-low RA MgO process in perp...

Magnetic tunnel junction element with RU hard mask for use in magne...

Multi terminal device stack formation methods

Multi terminal device stack systems and methods

High density spin orbit torque magnetic random access memory

Methods of manufacture precessional spin current magnetic tunnel ju...

Precessional spin current structure for MRAM

Method for manufacturing a magnetic random-access memory device usi...

Magnetic memory chip having nvm class and SRAM class MRAM elements...

Magnetic tunnel junction element with Ru hard mask for use in magne...

Precessional spin current structure for magnetic random access memo...

Precessional spin current structure with nonmagnetic insertion laye...

High retention storage layer using ultra-low RA MgO process in perp...

High retention multi-level-series magnetic random-access memory

Multi terminal device stack formation methods

Method for manufacturing magnetic memory element with post pillar f...

Method for manufacturing a magnetic memory element using Ru and dia...

Memory device having overlapping magnetic tunnel junctions in compl...

Magnetic tunnel junction memory element with improved reference lay...

Perpendicular magnetic anisotropy interface tunnel junction devices...

Magnetic tunnel junction (MTJ) fabrication methods and systems

Precessional spin current magnetic tunnel junction devices and meth...

Polishing stop layer(s) for processing arrays of semiconductor elem...

Method of manufacturing high annealing temperature perpendicular ma...

Precessional spin current structure with high in-plane magnetizatio...

Precessional spin current structure with non-magnetic insertion lay...

Perpendicular magnetic tunnel junction retention and endurance impr...

Memory cell having magnetic tunnel junction and thermal stability e...

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING A MAGNETIC RANDOM-ACCESS MEMORY DEVICE USI...

MAGNETIC TUNNEL JUNCTION ELEMENT WITH RU HARD MASK FOR USE IN MAGNE...

HIGH DENSITY SPIN ORBIT TORQUE MAGNETIC RANDOM ACCESS MEMORY

PRECESSIONAL SPIN CURRENT STRUCTURE WITH NON-MAGNETIC INSERTION LAY...

HIGH RETENTION STORAGE LAYER USING ULTRA-LOW RA MgO PROCESS IN PERP...

MULTI TERMINAL DEVICE STACK FORMATION METHODS

METHODS OF MANUFACTURE PRECESSIONAL SPIN CURRENT MAGNETIC TUNNEL JU...

METHOD FOR MANUFACTURING MAGNETIC MEMORY ELEMENT WITH POST PILLAR F...

METHOD FOR MANUFACTURING A SELF-ALIGNED MAGNETIC MEMORY ELEMENT WIT...

METHOD FOR MANUFACTURING A MAGNETIC MEMORY ELEMENT USING RU AND DIA...

MAGNETIC TUNNEL JUNCTION ELEMENT WITH RU HARD MASK FOR USE IN MAGNE...

HIGH RETENTION MULTI-LEVEL-SERIES MAGNETIC RANDOM-ACCESS MEMORY

METHOD FOR MANUFACTURING A MAGNETIC RANDOM-ACCESS MEMORY DEVICE USI...

Precessional Spin Current Structure for MRAM

PRECESSIONAL SPIN CURRENT STRUCTURE WITH NON-MAGNETIC INSERTION LAY...

MULTI TERMINAL DEVICE STACK SYSTEMS AND METHODS

MULTI TERMINAL DEVICE STACK FORMATION METHODS

PRECESSIONAL SPIN CURRENT STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMO...

MAGNETIC TUNNEL JUNCTION MEMORY ELEMENT WITH IMPROVED REFERENCE LAY...

Method of Manufacturing High Annealing Temperature Perpendicular Ma...

PROCESS FOR CREATING A HIGH DENSITY MAGNETIC TUNNEL JUNCTION ARRAY...

METHOD FOR MANUFACTURING A MAGNETIC MEMORY ELEMENT ARRAY USING HIGH...

PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICE WITH SKYRMIONIC ENHAN...

MAGNETIC MEMORY CHIP HAVING NVM CLASS AND SRAM CLASS MRAM ELEMENTS...

PROCESS FOR CREATING DENSE PILLARS USING MULTIPLE EXPOSURES FOR MRA...

PERPENDICULAR MAGNETIC TUNNEL JUNCTION DEVICE WITH PRECESSIONAL SPI...

MAGNETIC RANDOM ACCESS MEMORY WITH REDUCED INTERNAL OPERATING TEMPE...

Methods for Manufacturing a Perpendicular Magnetic Tunnel Junction...

Method for Manufacturing a Magnetic Memory Device by Pre-Patterning...

METHODS OF MANUFACTURING MAGNETIC TUNNEL JUNCTION DEVICES