Nicolas Nagel

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned V0-contact for cell size reduction
- Patent number 7,378,700
- Issue date May 27, 2008
- Infineon Technologies AG
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer electrode and method of forming the same
- Patent number 7,319,270
- Issue date Jan 15, 2008
- Infineon Technologies AG
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adhesion layer for Pt on SiO2
- Patent number 7,270,884
- Issue date Sep 18, 2007
- Infineon Technologies AG
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabrication of a ferroelectric capacitor
- Patent number 7,199,002
- Issue date Apr 3, 2007
- Infineon Technologies AG
- Karl Hornik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned V0-contact for cell size reduction
- Patent number 7,061,035
- Issue date Jun 13, 2006
- Infineon Technologies AG
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and a method for forming a capacitor device
- Patent number 7,041,551
- Issue date May 9, 2006
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall structure and method of fabrication for reducing oxygen di...
- Patent number 7,042,705
- Issue date May 9, 2006
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier stack with improved barrier properties
- Patent number 7,009,230
- Issue date Mar 7, 2006
- Infineon Technologies Aktiengesellschaft
- Bum Ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Side-wall barrier structure and method of fabrication
- Patent number 6,946,735
- Issue date Sep 20, 2005
- Infineon AG
- Stefan Gernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation protection in integrated circuits
- Patent number 6,940,111
- Issue date Sep 6, 2005
- Infineon Technologies Aktiengesellschaft
- Rainer Bruchhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor memory device
- Patent number 6,858,492
- Issue date Feb 22, 2005
- Infineon Technologies AG
- Rainer Bruchhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor memory device
- Patent number 6,818,503
- Issue date Nov 16, 2004
- Infineon Technologies AG
- Rainer Bruchhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing stress in integrated circuits
- Patent number 6,815,234
- Issue date Nov 9, 2004
- Infineon Technologies Aktiengesellschaft
- Uwe Wellhausen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer Pt electrode for DRAM and FRAM with high K dielectric m...
- Patent number 6,794,705
- Issue date Sep 21, 2004
- Infineon Technologies AG
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier stack with improved barrier properties
- Patent number 6,787,831
- Issue date Sep 7, 2004
- Infineon Technologies Aktiengesellschaft
- Bum Ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor memory device
- Patent number 6,773,986
- Issue date Aug 10, 2004
- Infineon Technologies AG
- Rainer Bruchhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeRAM memory and method for manufacturing it
- Patent number 6,704,219
- Issue date Mar 9, 2004
- Infineon Technologies AG
- Rainer Bruchhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells with improved reliability
- Patent number 6,621,683
- Issue date Sep 16, 2003
- Infineon Technologies Aktiengesellschaft
- Bum-ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor over plug structure
- Patent number 6,614,642
- Issue date Sep 2, 2003
- Infineon Technologies Aktiengesellschaft
- Bum-ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier for capacitor over plug structures
- Patent number 6,583,507
- Issue date Jun 24, 2003
- Bum Ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor electrodes arrangement with oxygen iridium between silico...
- Patent number 6,573,542
- Issue date Jun 3, 2003
- Infineon Technologies AG
- Rainer Bruchhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic material, its manufacturing method, dielectric capacitor...
- Patent number 6,011,284
- Issue date Jan 4, 2000
- Sony Corporation
- Kenji Katori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process of a capacitor structure of semiconductor memor...
- Patent number 5,994,153
- Issue date Nov 30, 1999
- Sony Corporation
- Nicolas Nagel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor structure of semiconductor memory cell and fabrication pr...
- Patent number 5,864,153
- Issue date Jan 26, 1999
- Sony Corporation
- Nicolas Nagel
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Multi-Layer Electrode and Method of Forming the Same
- Publication number 20080108203
- Publication date May 8, 2008
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned V0-contact for cell size reduction
- Publication number 20060151819
- Publication date Jul 13, 2006
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned Vo-contact for cell size reduction
- Publication number 20050082583
- Publication date Apr 21, 2005
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming ferrocapacitors and FeRAM devices
- Publication number 20050084984
- Publication date Apr 21, 2005
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device and a method for forming a capacitor device
- Publication number 20050067644
- Publication date Mar 31, 2005
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for fabrication of a ferroelectric capacitor
- Publication number 20050045932
- Publication date Mar 3, 2005
- Karl Hornik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-layer electrode and method of forming the same
- Publication number 20050023590
- Publication date Feb 3, 2005
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Suppression of electrode re-crystallisation in a ferrocapacitor
- Publication number 20040201049
- Publication date Oct 14, 2004
- Stefan Gernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Adhesion layer for Pt on SiO2
- Publication number 20040197576
- Publication date Oct 7, 2004
- Infineon Technologies North America Corp.
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier Stack with Improved Barrier Properties
- Publication number 20040178431
- Publication date Sep 16, 2004
- Bum Ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming electrical connections within ferroelectric devices
- Publication number 20040163233
- Publication date Aug 26, 2004
- Stefan Gernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sidewall structure and method of fabrication for reducing oxygen di...
- Publication number 20040149477
- Publication date Aug 5, 2004
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING STRESS IN INTEGRATED CIRCUITS
- Publication number 20040124452
- Publication date Jul 1, 2004
- Uwe Wellhausen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radiation protection in integrated circuits
- Publication number 20040104754
- Publication date Jun 3, 2004
- Rainer Bruchhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Side-wall barrier structure and method of fabrication
- Publication number 20040104471
- Publication date Jun 3, 2004
- Stefan Gernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for producing thin layers, such as for use in integrated ci...
- Publication number 20040087080
- Publication date May 6, 2004
- Uwe Wellhausen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier stack with improved barrier properties
- Publication number 20030132469
- Publication date Jul 17, 2003
- Bum Ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a semiconductor memory device
- Publication number 20030129796
- Publication date Jul 10, 2003
- Rainer Bruchhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a semiconductor memory device
- Publication number 20030060002
- Publication date Mar 27, 2003
- Rainer Bruchhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a semiconductor memory device
- Publication number 20030058700
- Publication date Mar 27, 2003
- Rainer Bruchhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FeRAM memory and method for manufacturing it
- Publication number 20030053346
- Publication date Mar 20, 2003
- Rainer Bruchhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-layer Pt electrode for DRAM and FRAM with high K dielectric m...
- Publication number 20020084481
- Publication date Jul 4, 2002
- Jingyu Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitor electrodes arrangement
- Publication number 20020070404
- Publication date Jun 13, 2002
- Rainer Bruchhaus
- H01 - BASIC ELECTRIC ELEMENTS

Nicolas Nagel

Person

Patents Grantslast 30 patents

Self-aligned V0-contact for cell size reduction

Multi-layer electrode and method of forming the same

Adhesion layer for Pt on SiO2

Process for fabrication of a ferroelectric capacitor

Self-aligned V0-contact for cell size reduction

Device and a method for forming a capacitor device

Sidewall structure and method of fabrication for reducing oxygen di...

Barrier stack with improved barrier properties

Side-wall barrier structure and method of fabrication

Radiation protection in integrated circuits

Method for fabricating a semiconductor memory device

Method for fabricating a semiconductor memory device

Reducing stress in integrated circuits

Multi-layer Pt electrode for DRAM and FRAM with high K dielectric m...

Barrier stack with improved barrier properties

Method for fabricating a semiconductor memory device

FeRAM memory and method for manufacturing it

Memory cells with improved reliability

Capacitor over plug structure

Barrier for capacitor over plug structures

Capacitor electrodes arrangement with oxygen iridium between silico...

Electronic material, its manufacturing method, dielectric capacitor...

Fabrication process of a capacitor structure of semiconductor memor...

Capacitor structure of semiconductor memory cell and fabrication pr...

Patents Applicationslast 30 patents

Multi-Layer Electrode and Method of Forming the Same

Self-aligned V0-contact for cell size reduction

Self-aligned Vo-contact for cell size reduction

Method for forming ferrocapacitors and FeRAM devices

Device and a method for forming a capacitor device

Process for fabrication of a ferroelectric capacitor

Multi-layer electrode and method of forming the same

Suppression of electrode re-crystallisation in a ferrocapacitor

Adhesion layer for Pt on SiO2

Barrier Stack with Improved Barrier Properties

Methods of forming electrical connections within ferroelectric devices

Sidewall structure and method of fabrication for reducing oxygen di...

REDUCING STRESS IN INTEGRATED CIRCUITS

Radiation protection in integrated circuits

Side-wall barrier structure and method of fabrication

Methods for producing thin layers, such as for use in integrated ci...

Barrier stack with improved barrier properties

Method for fabricating a semiconductor memory device

Method for fabricating a semiconductor memory device

Method for fabricating a semiconductor memory device

FeRAM memory and method for manufacturing it

Multi-layer Pt electrode for DRAM and FRAM with high K dielectric m...

Capacitor electrodes arrangement