Nobuyoshi Natsuaki

Person

Kodaira, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 7,799,690
- Issue date Sep 21, 2010
- Renesas Electronics Corporation
- Yoshikazu Tanabe
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 7,250,376
- Issue date Jul 31, 2007
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process of a semiconductor integrated circuit device
- Patent number 7,122,469
- Issue date Oct 17, 2006
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 7,053,007
- Issue date May 30, 2006
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 7,008,880
- Issue date Mar 7, 2006
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process of a semiconductor integrated circuit device
- Patent number 6,987,069
- Issue date Jan 17, 2006
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,962,880
- Issue date Nov 8, 2005
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,962,881
- Issue date Nov 8, 2005
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,855,642
- Issue date Feb 15, 2005
- Renesas Technology Corp.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process of a semiconductor integrated circuit device
- Patent number 6,784,116
- Issue date Aug 31, 2004
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing semiconductor integrated circuit device i...
- Patent number 6,723,665
- Issue date Apr 20, 2004
- Renesas Technology Corp.
- Yoshikazu Tanabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for manufacturing semiconductor integrated circuit device i...
- Patent number 6,602,808
- Issue date Aug 5, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,596,650
- Issue date Jul 22, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,569,780
- Issue date May 27, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process of a semiconductor integrated circuit device
- Patent number 6,528,403
- Issue date Mar 4, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit drive using...
- Patent number 6,528,431
- Issue date Mar 4, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing semiconductor integrated circuit device i...
- Patent number 6,521,550
- Issue date Feb 18, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,518,201
- Issue date Feb 11, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,518,202
- Issue date Feb 11, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process of a semiconductor integrated circuit device
- Patent number 6,503,819
- Issue date Jan 7, 2003
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,417,114
- Issue date Jul 9, 2002
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing semiconductor integrated circuit device i...
- Patent number 6,319,860
- Issue date Nov 20, 2001
- Hitachi, Ltd.
- Yoshikazu Tanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabricating semiconductor integrated circuit device
- Patent number 6,239,041
- Issue date May 29, 2001
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process of a semiconductor integrated circuit device
- Patent number 6,197,702
- Issue date Mar 6, 2001
- Hitachi, Ltd.
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing semiconductor integrated circuit device i...
- Patent number 6,066,508
- Issue date May 23, 2000
- Hitachi, Ltd.
- Yoshikazu Tanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing an improved SOI (silicon-on-insulator) semi...
- Patent number 6,063,686
- Issue date May 16, 2000
- Hiroo Masuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a PN junction formed on an insulator film
- Patent number 4,819,055
- Issue date Apr 4, 1989
- Hitachi, Ltd.
- Kazuo Nakazato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI process for forming a thin film transistor using solid phase ep...
- Patent number 4,808,546
- Issue date Feb 28, 1989
- Hitachi, Ltd.
- Masahiro Moniwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device including selective et...
- Patent number 4,742,025
- Issue date May 3, 1988
- Hitachi, Ltd.
- Kiyonori Ohyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming twin doped regions of the same depth by high ener...
- Patent number 4,729,964
- Issue date Mar 8, 1988
- Hitachi, Ltd.
- Nobuyoshi Natsuaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for fabricating semiconductor intergrated circuit device
- Publication number 20080045027
- Publication date Feb 21, 2008
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication process of a semiconductor integrated circuit device
- Publication number 20050266630
- Publication date Dec 1, 2005
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20050227501
- Publication date Oct 13, 2005
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20050208731
- Publication date Sep 22, 2005
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication process of a semiconductor integrated circuit device
- Publication number 20040198067
- Publication date Oct 7, 2004
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20040161945
- Publication date Aug 19, 2004
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20040157468
- Publication date Aug 12, 2004
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor intergrated circuit device
- Publication number 20040157467
- Publication date Aug 12, 2004
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20030219995
- Publication date Nov 27, 2003
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for manufacturing semiconductor integrated circuit device i...
- Publication number 20030203646
- Publication date Oct 30, 2003
- Yoshikazu Tanabe
- C30 - CRYSTAL GROWTH
Information Patent Application
Fabrication process of a semiconductor integrated circuit device
- Publication number 20030143864
- Publication date Jul 31, 2003
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication process of a semiconductor integrated circuit device
- Publication number 20020048967
- Publication date Apr 25, 2002
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for manufacturing semiconductor integrated circuit device i...
- Publication number 20020042211
- Publication date Apr 11, 2002
- Yoshikazu Tanabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Process for manufacturing semiconductor integrated circuit device i...
- Publication number 20020019149
- Publication date Feb 14, 2002
- Yoshikazu Tanabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20020009898
- Publication date Jan 24, 2002
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20020004315
- Publication date Jan 10, 2002
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication process of a semiconductor integrated circuit device
- Publication number 20010024870
- Publication date Sep 27, 2001
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20010010975
- Publication date Aug 2, 2001
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20010009813
- Publication date Jul 26, 2001
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor integrated circuit device
- Publication number 20010006853
- Publication date Jul 5, 2001
- Yoshikazu Tanabe
- H01 - BASIC ELECTRIC ELEMENTS

Nobuyoshi Natsuaki

Person

Patents Grantslast 30 patents

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Fabrication process of a semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Fabrication process of a semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Fabrication process of a semiconductor integrated circuit device

Process for manufacturing semiconductor integrated circuit device i...

Process for manufacturing semiconductor integrated circuit device i...

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Fabrication process of a semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit drive using...

Process for manufacturing semiconductor integrated circuit device i...

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Fabrication process of a semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Process for manufacturing semiconductor integrated circuit device i...

Method for fabricating semiconductor integrated circuit device

Fabrication process of a semiconductor integrated circuit device

Process for manufacturing semiconductor integrated circuit device i...

Method of manufacturing an improved SOI (silicon-on-insulator) semi...

Semiconductor device having a PN junction formed on an insulator film

SOI process for forming a thin film transistor using solid phase ep...

Method of fabricating a semiconductor device including selective et...

Method of forming twin doped regions of the same depth by high ener...

Patents Applicationslast 30 patents

Method for fabricating semiconductor intergrated circuit device

Fabrication process of a semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Fabrication process of a semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor intergrated circuit device

Method for fabricating semiconductor integrated circuit device

Process for manufacturing semiconductor integrated circuit device i...

Fabrication process of a semiconductor integrated circuit device

Fabrication process of a semiconductor integrated circuit device

Process for manufacturing semiconductor integrated circuit device i...

Process for manufacturing semiconductor integrated circuit device i...

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Fabrication process of a semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device

Method for fabricating semiconductor integrated circuit device