Peng-Kai Hsu

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Interconnect structures including a fin structure and a metal cap
- Patent number 11,929,314
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hsien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating dual high-k metal gates for MOS devices
- Patent number 9,263,445
- Issue date Feb 16, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating dual high-k metal gate for MOS devices
- Patent number 8,853,068
- Issue date Oct 7, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS dual metal gate semiconductor device
- Patent number 8,836,038
- Issue date Sep 16, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid process for forming metal gates of MOS devices
- Patent number 8,536,660
- Issue date Sep 17, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Disc package assembly
- Patent number 8,418,848
- Issue date Apr 16, 2013
- Princo Middle East FZE
- Peng-Kai Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices and methods with bilayer dielectrics
- Patent number 8,384,159
- Issue date Feb 26, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to improve dielectric quality in high-k metal gate technology
- Patent number 8,324,090
- Issue date Dec 4, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating dual high-k metal gates for MOS devices
- Patent number 8,105,931
- Issue date Jan 31, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device gate structure including a gettering layer
- Patent number 7,989,321
- Issue date Aug 2, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with dual-metal gate structures and fabricati...
- Patent number 7,947,591
- Issue date May 24, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Base oxide engineering for high-K gate stacks
- Patent number 7,939,396
- Issue date May 10, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact hole structures and contact structures and fabrication meth...
- Patent number 7,875,547
- Issue date Jan 25, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ju-Wang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid process for forming metal gates
- Patent number 7,812,414
- Issue date Oct 12, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS devices with continuous contact etch stop layer
- Patent number 7,732,878
- Issue date Jun 8, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FIN-FET device structure formed employing bulk semiconductor substrate
- Patent number 7,663,185
- Issue date Feb 16, 2010
- Taiwan Semiconductor Manufacturing Co, Ltd.
- Kuang-Hsin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for photoresist stripping and treatment of low-k dielectric...
- Patent number 7,598,176
- Issue date Oct 6, 2009
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Jang-Shiang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods with bilayer dielectrics
- Patent number 7,531,399
- Issue date May 12, 2009
- Taiwan Semiconductor Manufacturing Company
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Measuring low dielectric constant film properties during processing
- Patent number 7,400,401
- Issue date Jul 15, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jang-Shiang Tsai
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor devices with dual-metal gate structures and fabricati...
- Patent number 7,378,713
- Issue date May 27, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wet cleaning cavitation system and method to remove particulate waf...
- Patent number 7,373,941
- Issue date May 20, 2008
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Chun-Li Chou
- B08 - CLEANING
Information Patent Grant
Methods and structures for critical dimension and profile measurement
- Patent number 7,208,331
- Issue date Apr 24, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jyu-Horng Shieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for removing organic materials during formation of a metal...
- Patent number 7,122,484
- Issue date Oct 17, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Baw-Ching Perng
- C11 - ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES FATTY ACIDS...
Information Patent Grant
Process for improving dielectric properties in low-k organosilicate...
- Patent number 7,074,727
- Issue date Jul 11, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Grant
Zirconium oxide and hafnium oxide etching using halogen containing...
- Patent number 7,012,027
- Issue date Mar 14, 2006
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Baw-Ching Perng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wet etchant composition and method for etching HfO2 and ZrO2
- Patent number 6,969,688
- Issue date Nov 29, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd
- Baw-Ching Perng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aqueous cleaning composition containing copper-specific corrosion i...
- Patent number 6,864,193
- Issue date Mar 8, 2005
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Li Chou
- C11 - ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES FATTY ACIDS...
Information Patent Grant
Methods for improving sheet resistance of silicide layer after remo...
- Patent number 6,838,381
- Issue date Jan 4, 2005
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal silicide etch resistant plasma etch method
- Patent number 6,706,640
- Issue date Mar 16, 2004
- Taiwan Semiconductor Manufacturing Co., Ltd
- Ming-Huan Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-reducible copper(II) source reagents for chemical vapor deposi...
- Patent number 6,369,256
- Issue date Apr 9, 2002
- National Research Council of Canada
- Yun Chi
- C07 - ORGANIC CHEMISTRY

Patents Applicationslast 30 patents

Information Patent Application
CONTACT FEATURES OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20240387265
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pin-Wen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURES AND MANUFACTURING METHOD THEREOF
- Publication number 20240170381
- Publication date May 23, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hsien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE PRE-CLEANING
- Publication number 20230386822
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Hsiang CHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FEATURES OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20230260836
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pei Shan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FEATURES OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20230223302
- Publication date Jul 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Pin-Wen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT STRUCTURES AND MANUFACTURING METHOD THEREOF
- Publication number 20220293503
- Publication date Sep 15, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Chun-Hsien HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING DUAL HIGH-K METAL GATES FOR MOS DEVICES
- Publication number 20150021705
- Publication date Jan 22, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISC PACKAGE ASSEMBLY
- Publication number 20130008811
- Publication date Jan 10, 2013
- PRINCO AMERICA CORP.
- Peng-Kai Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF FABRICATING DUAL HIGH-K METAL GATE FOR MOS DEVICES
- Publication number 20120086085
- Publication date Apr 12, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid Process for Forming Metal Gates
- Publication number 20110001194
- Publication date Jan 6, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K METAL GATE STRUCTURE INCLUDING BUFFER LAYER
- Publication number 20100052077
- Publication date Mar 4, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO IMPROVE DIELECTRIC QUALITY IN HIGH-K METAL GATE TECHNOLOGY
- Publication number 20100052063
- Publication date Mar 4, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuri Masuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING DUAL HIGH-K METAL GATES FOR MOS DEVICES
- Publication number 20100052067
- Publication date Mar 4, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE GATE STRUCTURE INCLUDING A GETTERING LAYER
- Publication number 20100048010
- Publication date Feb 25, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Hao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS
- Publication number 20090315125
- Publication date Dec 24, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid Process for Forming Metal Gates of MOS Devices
- Publication number 20090230479
- Publication date Sep 17, 2009
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DUAL-METAL GATE STRUCTURES AND FABRICATI...
- Publication number 20080188044
- Publication date Aug 7, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid process for forming metal gates
- Publication number 20080173947
- Publication date Jul 24, 2008
- Yong-Tian Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH DUAL-METAL GATE STRUCTURES AND FABRICATI...
- Publication number 20080099851
- Publication date May 1, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS devices with continuous contact etch stop layer
- Publication number 20080093675
- Publication date Apr 24, 2008
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS
- Publication number 20080070395
- Publication date Mar 20, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING METAL-CONTAINING GATE STRUCTURES
- Publication number 20080050879
- Publication date Feb 28, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Cheng-Lung Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having nitrided high-k gate dielectric and met...
- Publication number 20080001237
- Publication date Jan 3, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Vincent S. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Base oxide engineering for high-K gate stacks
- Publication number 20070287199
- Publication date Dec 13, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Peng-Fu Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-FET device structure formed employing bulk semiconductor substrate
- Publication number 20070272954
- Publication date Nov 29, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Kuang-Hsin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS device having PMOS and NMOS transistors with different gate st...
- Publication number 20070228480
- Publication date Oct 4, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Fong-Yu Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Measuring low dielectric constant film properties during processing
- Publication number 20060220653
- Publication date Oct 5, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jang-Shiang Tsai
- G01 - MEASURING TESTING
Information Patent Application
Contact hole structures and contact structures and fabrication meth...
- Publication number 20060154478
- Publication date Jul 13, 2006
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Ju-Wang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and structures for critical dimension and profile measurement
- Publication number 20060073620
- Publication date Apr 6, 2006
- Jyu-Horng Shieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for photoresist stripping and treatment of low-k dielectric...
- Publication number 20060063386
- Publication date Mar 23, 2006
- Jang-Shiang Tsai
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Peng-Kai Hsu

Person

Patents Grantslast 30 patents

Interconnect structures including a fin structure and a metal cap

Method of fabricating dual high-k metal gates for MOS devices

Method of fabricating dual high-k metal gate for MOS devices

CMOS dual metal gate semiconductor device

Hybrid process for forming metal gates of MOS devices

Disc package assembly

Semiconductor devices and methods with bilayer dielectrics

Method to improve dielectric quality in high-k metal gate technology

Method of fabricating dual high-k metal gates for MOS devices

Semiconductor device gate structure including a gettering layer

Semiconductor devices with dual-metal gate structures and fabricati...

Base oxide engineering for high-K gate stacks

Contact hole structures and contact structures and fabrication meth...

Hybrid process for forming metal gates

MOS devices with continuous contact etch stop layer

FIN-FET device structure formed employing bulk semiconductor substrate

Method for photoresist stripping and treatment of low-k dielectric...

Semiconductor devices and methods with bilayer dielectrics

Measuring low dielectric constant film properties during processing

Semiconductor devices with dual-metal gate structures and fabricati...

Wet cleaning cavitation system and method to remove particulate waf...

Methods and structures for critical dimension and profile measurement

Process for removing organic materials during formation of a metal...

Process for improving dielectric properties in low-k organosilicate...

Zirconium oxide and hafnium oxide etching using halogen containing...

Wet etchant composition and method for etching HfO2 and ZrO2

Aqueous cleaning composition containing copper-specific corrosion i...

Methods for improving sheet resistance of silicide layer after remo...

Metal silicide etch resistant plasma etch method

Self-reducible copper(II) source reagents for chemical vapor deposi...

Patents Applicationslast 30 patents

CONTACT FEATURES OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

INTERCONNECT STRUCTURES AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE PRE-CLEANING

CONTACT FEATURES OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

CONTACT FEATURES OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

INTERCONNECT STRUCTURES AND MANUFACTURING METHOD THEREOF

METHOD OF FABRICATING DUAL HIGH-K METAL GATES FOR MOS DEVICES

DISC PACKAGE ASSEMBLY

METHOD OF FABRICATING DUAL HIGH-K METAL GATE FOR MOS DEVICES

Hybrid Process for Forming Metal Gates

HIGH-K METAL GATE STRUCTURE INCLUDING BUFFER LAYER

METHOD TO IMPROVE DIELECTRIC QUALITY IN HIGH-K METAL GATE TECHNOLOGY

METHOD OF FABRICATING DUAL HIGH-K METAL GATES FOR MOS DEVICES

SEMICONDUCTOR DEVICE GATE STRUCTURE INCLUDING A GETTERING LAYER

SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS

Hybrid Process for Forming Metal Gates of MOS Devices

SEMICONDUCTOR DEVICES WITH DUAL-METAL GATE STRUCTURES AND FABRICATI...

Hybrid process for forming metal gates

SEMICONDUCTOR DEVICES WITH DUAL-METAL GATE STRUCTURES AND FABRICATI...

MOS devices with continuous contact etch stop layer

SEMICONDUCTOR DEVICES AND METHODS WITH BILAYER DIELECTRICS

METHODS OF FORMING METAL-CONTAINING GATE STRUCTURES

Semiconductor device having nitrided high-k gate dielectric and met...

Base oxide engineering for high-K gate stacks

FIN-FET device structure formed employing bulk semiconductor substrate

CMOS device having PMOS and NMOS transistors with different gate st...

Measuring low dielectric constant film properties during processing

Contact hole structures and contact structures and fabrication meth...

Methods and structures for critical dimension and profile measurement

Method for photoresist stripping and treatment of low-k dielectric...