Robert Xu

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-repairing field effect transisitor
- Patent number 10,600,902
- Issue date Mar 24, 2020
- Vishay SIliconix, LLC
- Robert Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for substrate wafer back side and edge cross sect...
- Patent number 10,546,750
- Issue date Jan 28, 2020
- Vishay Siliconix
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench-like feed-throughs
- Patent number 10,032,901
- Issue date Jul 24, 2018
- Vishay-Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Breakdown voltage blocking device
- Patent number 9,722,041
- Issue date Aug 1, 2017
- Vishay Siliconix
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-high density trench MOSFET
- Patent number 9,431,530
- Issue date Aug 30, 2016
- Vishay Siliconix
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench polysilicon diode
- Patent number 9,431,550
- Issue date Aug 30, 2016
- Vishay Siliconix
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with trench-like feed-throughs
- Patent number 9,306,056
- Issue date Apr 5, 2016
- Vishay Siliconix
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for substrate wafer back side and edge cross sect...
- Patent number 9,230,810
- Issue date Jan 5, 2016
- Vishay Siliconix
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self aligned contacts for a power MOSFET
- Patent number 8,629,019
- Issue date Jan 14, 2014
- Vishay Siliconix
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self aligned contacts for a power MOSFET
- Patent number 8,367,500
- Issue date Feb 5, 2013
- Vishay Siliconix
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned contact in a semiconductor device and method of fabric...
- Patent number 8,080,459
- Issue date Dec 20, 2011
- Vishay Siliconix
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench polysilicon diode
- Patent number 8,072,013
- Issue date Dec 6, 2011
- Vishay Siliconix
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a closed cell trench MOSFET
- Patent number 7,833,863
- Issue date Nov 16, 2010
- Vishay Siliconix
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating super trench MOSFET including buried source e...
- Patent number 7,704,836
- Issue date Apr 27, 2010
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming self aligned contacts for a power MOSFET
- Patent number 7,642,164
- Issue date Jan 5, 2010
- Vishay Siliconix
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench polysilicon diode
- Patent number 7,612,431
- Issue date Nov 3, 2009
- Vishay Siliconix
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super trench MOSFET including buried source electrode
- Patent number 7,557,409
- Issue date Jul 7, 2009
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench polysilicon diode
- Patent number 7,544,545
- Issue date Jun 9, 2009
- Vishay Siliconix
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a closed cell trench MOSFET
- Patent number 7,361,558
- Issue date Apr 22, 2008
- Vishay Siliconix
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Closed cell trench metal-oxide-semiconductor field effect transistor
- Patent number 7,279,743
- Issue date Oct 9, 2007
- Vishay Siliconix
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super trench MOSFET including buried source electrode and method of...
- Patent number 7,183,610
- Issue date Feb 27, 2007
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned differential oxidation in trenches by ion implantation
- Patent number 7,012,005
- Issue date Mar 14, 2006
- Siliconix Incorporated
- Karl Lichtenberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate with trenches for reducing substrate resist...
- Patent number 6,858,471
- Issue date Feb 22, 2005
- Vishay Siliconix
- Jacek Korec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thicker oxide formation at the trench bottom by selective oxide dep...
- Patent number 6,709,930
- Issue date Mar 23, 2004
- Siliconix Incorporated
- Ben Chan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS
- Publication number 20170025527
- Publication date Jan 26, 2017
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...
- Publication number 20160225622
- Publication date Aug 4, 2016
- VISHAY-SILICONIX
- Hamilton LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BREAKDOWN VOLTAGE BLOCKING DEVICE
- Publication number 20140077287
- Publication date Mar 20, 2014
- VISHAY-SILICONIX
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH POLYSILICON DIODE
- Publication number 20120068178
- Publication date Mar 22, 2012
- VISHAY-SILICONIX
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS
- Publication number 20110101525
- Publication date May 5, 2011
- VISHAY-SILICONIX
- Deva Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-HIGH DENSITY TRENCH MOSFET
- Publication number 20110089486
- Publication date Apr 21, 2011
- VISHAY-SILICONIX
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...
- Publication number 20110049682
- Publication date Mar 3, 2011
- VISHAY-SILICONIX
- Hamilton Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating super trench MOSFET including buried source e...
- Publication number 20100019316
- Publication date Jan 28, 2010
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-REPAIRING FIELD EFFECT TRANSISITOR
- Publication number 20090200578
- Publication date Aug 13, 2009
- VISHAY-SILICONIX
- Robert Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating super trench MOSFET including buried source e...
- Publication number 20080182376
- Publication date Jul 31, 2008
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench polysilicon diode
- Publication number 20080135872
- Publication date Jun 12, 2008
- VISHAY-SILICONIX
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super trench MOSFET including buried source electrode and method of...
- Publication number 20070187753
- Publication date Aug 16, 2007
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench polysilicon diode
- Publication number 20070145411
- Publication date Jun 28, 2007
- Qufei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super trench MOSFET including buried source electrode and method of...
- Publication number 20050242392
- Publication date Nov 3, 2005
- Siliconix Incorporated
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self aligned contact in a semiconductor device and method of fabric...
- Publication number 20050224891
- Publication date Oct 13, 2005
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a closed cell trench MOSFET
- Publication number 20050148128
- Publication date Jul 7, 2005
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Closed cell trench metal-oxide-semiconductor field effect transistor
- Publication number 20050116282
- Publication date Jun 2, 2005
- VISHAY-SILICONIX
- Deva N. Pattanayak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming self aligned contacts for a power mosfet
- Publication number 20040058481
- Publication date Mar 25, 2004
- Robert Q. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned differential oxidation in trenches by ion implantation
- Publication number 20030235959
- Publication date Dec 25, 2003
- Siliconix Incorporated
- Karl Lichtenberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICKER OXIDE FORMATION AT THE TRENCH BOTTOM BY SELECTIVE OXIDE DEP...
- Publication number 20030235958
- Publication date Dec 25, 2003
- Siliconix Incorporated
- Ben Chan
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Self-repairing field effect transisitor

System and method for substrate wafer back side and edge cross sect...

Semiconductor device with trench-like feed-throughs

Breakdown voltage blocking device

Super-high density trench MOSFET

Trench polysilicon diode

Semiconductor device with trench-like feed-throughs

System and method for substrate wafer back side and edge cross sect...

Method of forming self aligned contacts for a power MOSFET

Method of forming self aligned contacts for a power MOSFET

Self aligned contact in a semiconductor device and method of fabric...

Trench polysilicon diode

Method of manufacturing a closed cell trench MOSFET

Method of fabricating super trench MOSFET including buried source e...

Method of forming self aligned contacts for a power MOSFET

Trench polysilicon diode

Super trench MOSFET including buried source electrode

Trench polysilicon diode

Method of manufacturing a closed cell trench MOSFET

Closed cell trench metal-oxide-semiconductor field effect transistor

Super trench MOSFET including buried source electrode and method of...

Self-aligned differential oxidation in trenches by ion implantation

Semiconductor substrate with trenches for reducing substrate resist...

Thicker oxide formation at the trench bottom by selective oxide dep...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS

SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...

BREAKDOWN VOLTAGE BLOCKING DEVICE

TRENCH POLYSILICON DIODE

SEMICONDUCTOR DEVICE WITH TRENCH-LIKE FEED-THROUGHS

SUPER-HIGH DENSITY TRENCH MOSFET

SYSTEM AND METHOD FOR SUBSTRATE WAFER BACK SIDE AND EDGE CROSS SECT...

Method of fabricating super trench MOSFET including buried source e...

SELF-REPAIRING FIELD EFFECT TRANSISITOR

Method of fabricating super trench MOSFET including buried source e...

Trench polysilicon diode

Super trench MOSFET including buried source electrode and method of...

Trench polysilicon diode

Super trench MOSFET including buried source electrode and method of...

Self aligned contact in a semiconductor device and method of fabric...

Method of manufacturing a closed cell trench MOSFET

Closed cell trench metal-oxide-semiconductor field effect transistor

Method of forming self aligned contacts for a power mosfet

Self-aligned differential oxidation in trenches by ion implantation

THICKER OXIDE FORMATION AT THE TRENCH BOTTOM BY SELECTIVE OXIDE DEP...