Ruilong Xie

Person

Schenectady, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Backside CMOS trench epi with close N2P space
- Patent number 12,154,945
- Issue date Nov 26, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Moon-shaped bottom spacer for vertical transport field effect trans...
- Patent number 12,154,985
- Issue date Nov 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random-access memory cell
- Patent number 12,150,310
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked device with buried interconnect
- Patent number 12,142,526
- Issue date Nov 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having two-dimensional channel
- Patent number 12,136,656
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside electrical contacts to buried power rails
- Patent number 12,136,655
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization lines on integrated circuit products
- Patent number 12,131,994
- Issue date Oct 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming N-type and P-type horizontal gate-all-around devices
- Patent number 12,113,067
- Issue date Oct 8, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compact MRAM architecture with magnetic bottom electrode
- Patent number 12,112,782
- Issue date Oct 8, 2024
- International Business Machines Corporation
- Julien Frougier
- G11 - INFORMATION STORAGE
Information Patent Grant
Source/drain contact positioning under power rail
- Patent number 12,107,132
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistors with self-aligned gate cut
- Patent number 12,107,014
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate thinning for a backside power distribution network
- Patent number 12,106,969
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistor with bottom dielectric isol...
- Patent number 12,100,746
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated short channel omega gate FinFET and long channel FinFET
- Patent number 12,100,766
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap around contact process margin improvement with early contact cut
- Patent number 12,100,744
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistors having end portions of nan...
- Patent number 12,094,972
- Issue date Sep 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistor having a wrap-around gate with bot...
- Patent number 12,094,949
- Issue date Sep 17, 2024
- International Business Machines Corporation
- Choonghyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with backside gate contacts
- Patent number 12,087,691
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary field effect transistor devices
- Patent number 12,087,770
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned via to metal line for interconnect
- Patent number 12,080,640
- Issue date Sep 3, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried local interconnect between complementary field-effect transi...
- Patent number 12,080,714
- Issue date Sep 3, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual inner spacer epitaxy in monolithic stacked FETs
- Patent number 12,080,709
- Issue date Sep 3, 2024
- International Business Machines Corporation
- Sagarika Mukesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AI accelerator with MRAM, PCM, and recessed PCM bottom electrode
- Patent number 12,075,627
- Issue date Aug 27, 2024
- International Business Machines Corporation
- Ruilong Xie
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with early buried power rail (BPR) and backsid...
- Patent number 12,057,371
- Issue date Aug 6, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with power rail disposed under active gate
- Patent number 12,046,643
- Issue date Jul 23, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Authenticity and yield by reading defective cells
- Patent number 12,027,224
- Issue date Jul 2, 2024
- International Business Machines Corporation
- Julien Frougier
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Spin-orbit torque and spin-transfer torque magnetoresistive random-...
- Patent number 12,016,251
- Issue date Jun 18, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated nanosheet field effect transistors and floating gate mem...
- Patent number 12,009,435
- Issue date Jun 11, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned block for vertical FETs
- Patent number 12,009,395
- Issue date Jun 11, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside metal-insulator-metal (MIM) capacitors extending through b...
- Patent number 12,002,758
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED...
- Publication number 20240421035
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Nicolas Jean Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)
- Publication number 20240421064
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR BACKSIDE SIGNAL AND POWER
- Publication number 20240421087
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED GATE CUT REGION
- Publication number 20240420959
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT LAYOUTS WITH STAGGERED GATE AND SOURCE/DRAIN REGIONS
- Publication number 20240421145
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Carl Radens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTOR STRUCTURES WITH HYBRID GATE PITCH
- Publication number 20240421156
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF MIDDLE-OF-LINE RESISTANCE AND CAPACITANCE
- Publication number 20240421078
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECT LEVELS WITH MULTIPLE LINE TYPES
- Publication number 20240421079
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED DEVICES WITH BACKSIDE CONTACTS
- Publication number 20240421038
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLACEHOLDER WITH DIELECTRIC LINER PROTECTION TO PREVENT DIRECT BACK...
- Publication number 20240421085
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED GATE CUT REGION
- Publication number 20240420960
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TIGHT PITCH DIRECTIONAL SELECTIVE VIA GROWTH
- Publication number 20240421069
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER DISTRIBUTION WITH BACKSIDE POWER PLANES
- Publication number 20240421088
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Nicholas Anthony Lanzillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR BACKSIDE ISOLATION FEATURE FOR MERGED EPITAXY
- Publication number 20240420990
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACTS FOR GATE, SOURCE, AND DRAIN
- Publication number 20240421003
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER
- Publication number 20240421037
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIZATION LINES ON INTEGRATED CIRCUIT PRODUCTS
- Publication number 20240413082
- Publication date Dec 12, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FETs WITH BACKSIDE ANGLE CUT
- Publication number 20240413084
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVE DEVICE WITH THINNER Si LAYER
- Publication number 20240413164
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT WITH PROTRUDING SOURCE/DRAIN
- Publication number 20240413201
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF ALIGNED BACKSIDE CONTACT
- Publication number 20240413214
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS WITH METAL VIAS
- Publication number 20240413085
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL
- Publication number 20240415032
- Publication date Dec 12, 2024
- International Business Machines Corporation
- Kangguo Cheng
Information Patent Application
METAL INTERCONNECT LAYERS FOR FET ARCHITECTURES
- Publication number 20240404949
- Publication date Dec 5, 2024
- International Business Machines Corporation
- SON NGUYEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TWO-TRANSISTOR DYNAMIC RANDOM ACCESS MEMORY CELL
- Publication number 20240405071
- Publication date Dec 5, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SIGNAL WIRING AND FRONTSIDE...
- Publication number 20240404950
- Publication date Dec 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY BACKSIDE MIM CAPACITOR
- Publication number 20240404942
- Publication date Dec 5, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FVBP WITHOUT BACKSIDE Si RECESS
- Publication number 20240405112
- Publication date Dec 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRONTSIDE TO BACKSIDE CONNECTION WITHIN DOUBLE DIFFUSION BREAK
- Publication number 20240404944
- Publication date Dec 5, 2024
- International Business Machines Corporation
- Shravana Kumar Katakam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PASSIVE DEVICE INTEGRATION FOR SILICON-ON-INSULATOR S...
- Publication number 20240395664
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Ruilong Xie

Person

Patents Grantslast 30 patents

Backside CMOS trench epi with close N2P space

Moon-shaped bottom spacer for vertical transport field effect trans...

Ferroelectric random-access memory cell

Stacked device with buried interconnect

Semiconductor structure having two-dimensional channel

Backside electrical contacts to buried power rails

Metallization lines on integrated circuit products

Forming N-type and P-type horizontal gate-all-around devices

Compact MRAM architecture with magnetic bottom electrode

Source/drain contact positioning under power rail

Nanosheet transistors with self-aligned gate cut

Substrate thinning for a backside power distribution network

Gate-all-around field effect transistor with bottom dielectric isol...

Integrated short channel omega gate FinFET and long channel FinFET

Wrap around contact process margin improvement with early contact cut

Gate-all-around field effect transistors having end portions of nan...

Fin-type field effect transistor having a wrap-around gate with bot...

Semiconductor structures with backside gate contacts

Complementary field effect transistor devices

Self-aligned via to metal line for interconnect

Buried local interconnect between complementary field-effect transi...

Dual inner spacer epitaxy in monolithic stacked FETs

AI accelerator with MRAM, PCM, and recessed PCM bottom electrode

Semiconductor device with early buried power rail (BPR) and backsid...

Semiconductor structures with power rail disposed under active gate

Authenticity and yield by reading defective cells

Spin-orbit torque and spin-transfer torque magnetoresistive random-...

Integrated nanosheet field effect transistors and floating gate mem...

Self-aligned block for vertical FETs

Backside metal-insulator-metal (MIM) capacitors extending through b...

Patents Applicationslast 30 patents

TRANSISTORS WITH BOTTOM DIELECTRIC ISOLATION AND FULLY SELF-ALIGNED...

METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)

STRUCTURE FOR BACKSIDE SIGNAL AND POWER

INVERTED GATE CUT REGION

CIRCUIT LAYOUTS WITH STAGGERED GATE AND SOURCE/DRAIN REGIONS

STACKED TRANSISTOR STRUCTURES WITH HYBRID GATE PITCH

REDUCTION OF MIDDLE-OF-LINE RESISTANCE AND CAPACITANCE

INTERCONNECT LEVELS WITH MULTIPLE LINE TYPES

STACKED DEVICES WITH BACKSIDE CONTACTS

PLACEHOLDER WITH DIELECTRIC LINER PROTECTION TO PREVENT DIRECT BACK...

INVERTED GATE CUT REGION

TIGHT PITCH DIRECTIONAL SELECTIVE VIA GROWTH

POWER DISTRIBUTION WITH BACKSIDE POWER PLANES

SEMICONDUCTOR BACKSIDE ISOLATION FEATURE FOR MERGED EPITAXY

BACKSIDE CONTACTS FOR GATE, SOURCE, AND DRAIN

SOURCE/DRAIN PROTECTION USING A BACKSIDE PLACEHOLDER

METALLIZATION LINES ON INTEGRATED CIRCUIT PRODUCTS

STACKED FETs WITH BACKSIDE ANGLE CUT

PASSIVE DEVICE WITH THINNER Si LAYER

SELF-ALIGNED BACKSIDE CONTACT WITH PROTRUDING SOURCE/DRAIN

SELF ALIGNED BACKSIDE CONTACT

STACKED TRANSISTORS WITH METAL VIAS

PHASE CHANGE MEMORY CELL

METAL INTERCONNECT LAYERS FOR FET ARCHITECTURES

STACKED TWO-TRANSISTOR DYNAMIC RANDOM ACCESS MEMORY CELL

SEMICONDUCTOR DEVICE INCLUDING BACKSIDE SIGNAL WIRING AND FRONTSIDE...

HIGH DENSITY BACKSIDE MIM CAPACITOR

FVBP WITHOUT BACKSIDE Si RECESS

FRONTSIDE TO BACKSIDE CONNECTION WITHIN DOUBLE DIFFUSION BREAK

SEMICONDUCTOR PASSIVE DEVICE INTEGRATION FOR SILICON-ON-INSULATOR S...