Ruilong Xie

Person

Schenectady, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned C-shaped vertical field effect transistor
- Patent number 12,268,030
- Issue date Apr 1, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Grant
Backside power rails and power distribution network for density sca...
- Patent number 12,268,031
- Issue date Apr 1, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried power rail formation for vertical field effect transistors
- Patent number 12,268,016
- Issue date Apr 1, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top via interconnects with line wiggling prevention
- Patent number 12,266,605
- Issue date Apr 1, 2025
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain epitaxy process in stacked FET
- Patent number 12,262,552
- Issue date Mar 25, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Grant
PCM cell with nanoheater surrounded with airgaps
- Patent number 12,256,653
- Issue date Mar 18, 2025
- International Business Machines Corporation
- Juntao Li
Information Patent Grant
Vertical FET replacement gate formation with variable fin pitch
- Patent number 12,255,204
- Issue date Mar 18, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reconfigurable ring oscillator (RO) physical unclonable function (PUF)
- Patent number 12,255,651
- Issue date Mar 18, 2025
- International Business Machines Corporation
- Kangguo Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Embedded MRAM integrated with super via and dummy fill
- Patent number 12,256,554
- Issue date Mar 18, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Grant
Stacked planar field effect transistors with 2D material channels
- Patent number 12,249,643
- Issue date Mar 11, 2025
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM stack with reduced height
- Patent number 12,245,517
- Issue date Mar 4, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Grant
Self-aligned backside contact integration for transistors
- Patent number 12,243,913
- Issue date Mar 4, 2025
- International Business Machines Corporation
- Nikhil Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory with concentric ring-shaped heater
- Patent number 12,245,530
- Issue date Mar 4, 2025
- International Business Machines Corporation
- Kangguo Cheng
Information Patent Grant
Resistive switching device having a protective electrode ring
- Patent number 12,225,835
- Issue date Feb 11, 2025
- International Business Machines Corporation
- Takashi Ando
Information Patent Grant
Field effect transistors with bottom dielectric isolation
- Patent number 12,224,312
- Issue date Feb 11, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory with conductive rings
- Patent number 12,219,884
- Issue date Feb 4, 2025
- International Business Machines Corporation
- Kangguo Cheng
Information Patent Grant
Field effect transistors comprising a matrix of gate-all-around cha...
- Patent number 12,211,848
- Issue date Jan 28, 2025
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using different work-functions to reduce gate-induced drain leakage...
- Patent number 12,191,352
- Issue date Jan 7, 2025
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked field-effect transistors
- Patent number 12,183,740
- Issue date Dec 31, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained semiconductor FET devices with epitaxial quality improvement
- Patent number 12,176,434
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contact for nanosheet device
- Patent number 12,176,404
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked FET with independent gate control
- Patent number 12,176,345
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside CMOS trench epi with close N2P space
- Patent number 12,154,945
- Issue date Nov 26, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Moon-shaped bottom spacer for vertical transport field effect trans...
- Patent number 12,154,985
- Issue date Nov 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random-access memory cell
- Patent number 12,150,310
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked device with buried interconnect
- Patent number 12,142,526
- Issue date Nov 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having two-dimensional channel
- Patent number 12,136,656
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside electrical contacts to buried power rails
- Patent number 12,136,655
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization lines on integrated circuit products
- Patent number 12,131,994
- Issue date Oct 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming N-type and P-type horizontal gate-all-around devices
- Patent number 12,113,067
- Issue date Oct 8, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD-EFFECT TRANSISTOR CRESCENT-SHAPED DIELECTRIC ISOLATION
- Publication number 20250113560
- Publication date Apr 3, 2025
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ACTIVE PRIME REGION WITH CONDUCTIVE BYPASS
- Publication number 20250112121
- Publication date Apr 3, 2025
- International Business Machines Corporation
- Nicholas Alexander POLOMOFF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-SIDE BRIDGE CHIPS CONNECTING TWO SEMICONDUCTOR CHIPS WITH STAC...
- Publication number 20250112203
- Publication date Apr 3, 2025
- International Business Machines Corporation
- Manasa MEDIKONDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH PLACEHOLDER POSITION MARGIN
- Publication number 20250113537
- Publication date Apr 3, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Application
SPACER TO AVOID SOURCE AND DRAIN SHORTING
- Publication number 20250107197
- Publication date Mar 27, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Application
GATE METAL JUMPER IN STACKED FET SRAM
- Publication number 20250107059
- Publication date Mar 27, 2025
- International Business Machines Corporation
- Chen Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED CONTACT FOR FIELD EFFECT TRANSISTORS
- Publication number 20250105061
- Publication date Mar 27, 2025
- International Business Machines Corporation
- James P. Mazza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FETS CONTAINING DIFFERENT SHAPED INNER SPACERS
- Publication number 20250107218
- Publication date Mar 27, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
SPACER MODIFICATION FOR SELECTIVE AIRGAP SPACER FORMATION
- Publication number 20250107219
- Publication date Mar 27, 2025
- International Business Machines Corporation
- Juntao Li
Information Patent Application
SPACER PROTECTING SEMICONDUCTOR SUBSTRATE UNDER PASSIVE DEVICE DURI...
- Publication number 20250107227
- Publication date Mar 27, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
DIELECTRIC AND TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL NANOSHEET DEV...
- Publication number 20250098240
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Huimei Zhou
Information Patent Application
NANOSHEET DEVICE WITH ALIGNED ISOLATION AND EPITAXIAL GROWTH
- Publication number 20250098198
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Julien Frougier
Information Patent Application
BACKSIDE RESISTOR CONNECTED TO BACKSIDE BACK END OF LINE NETWORK
- Publication number 20250098288
- Publication date Mar 20, 2025
- International Business Machines Corporation
- JENS HAETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE FUSE STRUCTURE UTILIZING BACKSIDE CONTACT
- Publication number 20250096127
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL TIP-TO-TIP SCALING
- Publication number 20250096132
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE OFFSET GATE CONTACT FOR BACKSIDE SPACING
- Publication number 20250096074
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS INTEGRATION FOR DOPED PLACEHOLDER AS DIRECT BACKSIDE CONTACT
- Publication number 20250098268
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
BACKSIDE FUSE CONNECTED TO BACKSIDE BACK END OF THE LINE NETWORK
- Publication number 20250096126
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Dan Moy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM CONTACT JUMPERS FOR STACKED FIELD EFFECT TRANSISTOR SEMICOND...
- Publication number 20250096128
- Publication date Mar 20, 2025
- International Business Machines Corporation
- James P. Mazza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)
- Publication number 20250098322
- Publication date Mar 20, 2025
- International Business Machines Corporation
- HUIMEI ZHOU
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE CONTACT OVER AN ACTIVE REGION
- Publication number 20250098215
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Tao Li
Information Patent Application
STRAIN INDUCING TRENCHES FOR SOURCE/DRAIN REGIONS
- Publication number 20250098229
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Sagarika Mukesh
Information Patent Application
SOURCE/DRAIN REGIONS FOR NANOSHEET DEVICES
- Publication number 20250098245
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Sagarika Mukesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT AT GATE ENDS THROUGH BACKSIDE GATE CUT
- Publication number 20250089288
- Publication date Mar 13, 2025
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SIDED CIRCUIT CONNECTIONS
- Publication number 20250089336
- Publication date Mar 13, 2025
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND MIDDLE-OF-LINE CONTACT WITH BACKSIDE SOURCE/DRAIN CUT F...
- Publication number 20250079309
- Publication date Mar 6, 2025
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP AROUND BACKSIDE CONTACT FOR S/D WITH BACKSIDE TRENCH EPI AND B...
- Publication number 20250081541
- Publication date Mar 6, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE WITH SELF-ALIGNED OFFSET GATE CONTACT AND DIRECT BACKSIDE...
- Publication number 20250081581
- Publication date Mar 6, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Via To Avoid Local Interconnect Shorting
- Publication number 20250081525
- Publication date Mar 6, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTENNA DIODE INTEGRATION WITH BACKSIDE BACK END OF THE LINE NETWORK
- Publication number 20250079349
- Publication date Mar 6, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Ruilong Xie

Person

Patents Grantslast 30 patents

Self-aligned C-shaped vertical field effect transistor

Backside power rails and power distribution network for density sca...

Buried power rail formation for vertical field effect transistors

Top via interconnects with line wiggling prevention

Source/drain epitaxy process in stacked FET

PCM cell with nanoheater surrounded with airgaps

Vertical FET replacement gate formation with variable fin pitch

Reconfigurable ring oscillator (RO) physical unclonable function (PUF)

Embedded MRAM integrated with super via and dummy fill

Stacked planar field effect transistors with 2D material channels

MRAM stack with reduced height

Self-aligned backside contact integration for transistors

Phase change memory with concentric ring-shaped heater

Resistive switching device having a protective electrode ring

Field effect transistors with bottom dielectric isolation

Phase change memory with conductive rings

Field effect transistors comprising a matrix of gate-all-around cha...

Using different work-functions to reduce gate-induced drain leakage...

Stacked field-effect transistors

Strained semiconductor FET devices with epitaxial quality improvement

Wrap-around contact for nanosheet device

Stacked FET with independent gate control

Backside CMOS trench epi with close N2P space

Moon-shaped bottom spacer for vertical transport field effect trans...

Ferroelectric random-access memory cell

Stacked device with buried interconnect

Semiconductor structure having two-dimensional channel

Backside electrical contacts to buried power rails

Metallization lines on integrated circuit products

Forming N-type and P-type horizontal gate-all-around devices

Patents Applicationslast 30 patents

FIELD-EFFECT TRANSISTOR CRESCENT-SHAPED DIELECTRIC ISOLATION

ACTIVE PRIME REGION WITH CONDUCTIVE BYPASS

DUAL-SIDE BRIDGE CHIPS CONNECTING TWO SEMICONDUCTOR CHIPS WITH STAC...

SEMICONDUCTOR STRUCTURE WITH PLACEHOLDER POSITION MARGIN

SPACER TO AVOID SOURCE AND DRAIN SHORTING

GATE METAL JUMPER IN STACKED FET SRAM

SELF-ALIGNED CONTACT FOR FIELD EFFECT TRANSISTORS

STACKED FETS CONTAINING DIFFERENT SHAPED INNER SPACERS

SPACER MODIFICATION FOR SELECTIVE AIRGAP SPACER FORMATION

SPACER PROTECTING SEMICONDUCTOR SUBSTRATE UNDER PASSIVE DEVICE DURI...

DIELECTRIC AND TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL NANOSHEET DEV...

NANOSHEET DEVICE WITH ALIGNED ISOLATION AND EPITAXIAL GROWTH

BACKSIDE RESISTOR CONNECTED TO BACKSIDE BACK END OF LINE NETWORK

BACKSIDE FUSE STRUCTURE UTILIZING BACKSIDE CONTACT

METAL TIP-TO-TIP SCALING

BACKSIDE OFFSET GATE CONTACT FOR BACKSIDE SPACING

CMOS INTEGRATION FOR DOPED PLACEHOLDER AS DIRECT BACKSIDE CONTACT

BACKSIDE FUSE CONNECTED TO BACKSIDE BACK END OF THE LINE NETWORK

BOTTOM CONTACT JUMPERS FOR STACKED FIELD EFFECT TRANSISTOR SEMICOND...

METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR)

SEMICONDUCTOR DEVICE WITH GATE CONTACT OVER AN ACTIVE REGION

STRAIN INDUCING TRENCHES FOR SOURCE/DRAIN REGIONS

SOURCE/DRAIN REGIONS FOR NANOSHEET DEVICES

GATE CONTACT AT GATE ENDS THROUGH BACKSIDE GATE CUT

DUAL SIDED CIRCUIT CONNECTIONS

WRAP-AROUND MIDDLE-OF-LINE CONTACT WITH BACKSIDE SOURCE/DRAIN CUT F...

WRAP AROUND BACKSIDE CONTACT FOR S/D WITH BACKSIDE TRENCH EPI AND B...

STRUCTURE WITH SELF-ALIGNED OFFSET GATE CONTACT AND DIRECT BACKSIDE...

Via To Avoid Local Interconnect Shorting

ANTENNA DIODE INTEGRATION WITH BACKSIDE BACK END OF THE LINE NETWORK