Sanjeev Aggarwal

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Cycling to mitigate imprint in ferroelectric memories
- Patent number 7,729,156
- Issue date Jun 1, 2010
- Texas Instruments Incorporated
- John Anthony Rodriguez
- G11 - INFORMATION STORAGE
Information Patent Grant
Hardmask for forming ferroelectric capacitors in a semiconductor de...
- Patent number 7,514,734
- Issue date Apr 7, 2009
- Texas Instruments Incorporated
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a haze free, lead rich PZT film
- Patent number 7,361,949
- Issue date Apr 22, 2008
- Texas Instruments Incorporated
- Sanjeev Aggarwal
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ferroelectric capacitor having a substantially planar dielectric la...
- Patent number 7,153,706
- Issue date Dec 26, 2006
- Texas Instruments Incorporated
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration flow to prevent delamination from copper
- Patent number 7,144,808
- Issue date Dec 5, 2006
- Texas Instruments Incorporated
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming and using a hardmask for forming ferroelectric ca...
- Patent number 7,001,821
- Issue date Feb 21, 2006
- Texas Instruments Incorporated
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface treatment of copper to improve interconnect formation
- Patent number 6,995,088
- Issue date Feb 7, 2006
- Texas Instruments Incorporated
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen barrier for protecting ferroelectric capacitors in a semic...
- Patent number 6,984,857
- Issue date Jan 10, 2006
- Texas Instruments Incorporated
- K. R. Udayakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of amorphous aluminum oxide on a capacitor sidewall for use as...
- Patent number 6,876,021
- Issue date Apr 5, 2005
- Texas Instruments Incorporated
- J. Scott Martin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PZT (111) texture through Ir texture improvement
- Patent number 6,872,669
- Issue date Mar 29, 2005
- Texas Instruments Incorporated
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an FeRAM having a multi-layer hard mask and patte...
- Patent number 6,828,161
- Issue date Dec 7, 2004
- Texas Instruments Incorporated
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an FeRAM capacitor having a bottom electrode diff...
- Patent number 6,773,930
- Issue date Aug 10, 2004
- Texas Instruments Incorporated
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming ferroelectric Pb(Zr,Ti)O3 films
- Patent number 6,730,354
- Issue date May 4, 2004
- Agilent Technologies, Inc.
- Stephen R. Gilbert
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of preventing reduction of IrOx during PZT formation by met...
- Patent number 6,686,236
- Issue date Feb 3, 2004
- Texas Instruments Incorporated
- Sanjeev Aggarwal
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of preventing reduction of IrOx during PZT formation by met...
- Patent number 6,635,497
- Issue date Oct 21, 2003
- Texas Instruments Incorporated
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning a FeRAM capacitor with a sidewall during botto...
- Patent number 6,635,498
- Issue date Oct 21, 2003
- Texas Instruments Incorporated
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test system for ferroelectric materials and noble metal electrodes...
- Patent number 6,617,178
- Issue date Sep 9, 2003
- Agilent Technologies, Inc.
- Sanjeev Aggarwal
- G01 - MEASURING TESTING
Information Patent Grant
Methods of preventing reduction of IrOx during PZT formation by met...
- Patent number 6,596,547
- Issue date Jul 22, 2003
- Texas Instruments Incorporated
- Sanjeev Aggarwal
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
One step deposition process for the top electrode and hardmask in a...
- Patent number 6,576,482
- Issue date Jun 10, 2003
- Texas Instruments Incorporated
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of preventing reduction of irox during PZT formation by met...
- Patent number 6,528,328
- Issue date Mar 4, 2003
- Texas Instruments Incorporated
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of tungsten alignment mark for FeRAM processing
- Patent number 6,528,386
- Issue date Mar 4, 2003
- Texas Instruments Incorporated
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of preventing reduction of IrOx during PZT formation by met...
- Patent number 6,500,678
- Issue date Dec 31, 2002
- Texas Instruments Incorporated
- Sanjeev Aggarwal
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
CYCLING TO MITIGATE IMPRINT IN FERROELECTRIC MEMORIES
- Publication number 20090168487
- Publication date Jul 2, 2009
- TEXAS INSTRUMENTS INCORPORATED
- John Anthony Rodriguez
- G11 - INFORMATION STORAGE
Information Patent Application
GCIB smoothing of the contact level to improve PZT films
- Publication number 20080076191
- Publication date Mar 27, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Lindsey Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CLEANING POST-ETCH NOBLE METAL RESIDUES
- Publication number 20070298521
- Publication date Dec 27, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Yaw S. Obeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION FLOW TO PREVENT DELAMINATION FROM COPPER
- Publication number 20060281308
- Publication date Dec 14, 2006
- TEXAS INSTRUMENTS INCORPORATED
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric memory cells and methods for fabricating ferroelectri...
- Publication number 20060073613
- Publication date Apr 6, 2006
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and method to form improved seed layer
- Publication number 20060014378
- Publication date Jan 19, 2006
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hardmask for forming ferroelectric capacitors in a semiconductor de...
- Publication number 20060008965
- Publication date Jan 12, 2006
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface treatment of copper to improve interconnect formation
- Publication number 20050260853
- Publication date Nov 24, 2005
- Texas Instruments, Incorporated
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric capacitor having a substantially planar dielectric la...
- Publication number 20050239218
- Publication date Oct 27, 2005
- TEXAS INSTRUMENTS INCORPORATED
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric capacitor having an oxide electrode template and a me...
- Publication number 20050230725
- Publication date Oct 20, 2005
- TEXAS INSTRUMENTS INCORPORATED
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Barrier for copper integrated circuits
- Publication number 20050206000
- Publication date Sep 22, 2005
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optimized ferroelectric material crystallographic texture for enhan...
- Publication number 20050199924
- Publication date Sep 15, 2005
- Glen R. Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a haze free, lead rich PZT film
- Publication number 20050130328
- Publication date Jun 16, 2005
- Sanjeev Aggarwal
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Hardmask for forming ferroelectric capacitors in a semiconductor de...
- Publication number 20050101034
- Publication date May 12, 2005
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrogen barrier for protecting ferroelectric capacitors in a semic...
- Publication number 20050012126
- Publication date Jan 20, 2005
- K. R. Udayakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface defect elimination using directed beam method
- Publication number 20040157456
- Publication date Aug 12, 2004
- Lindsey H. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a haze free, lead rich PZT film
- Publication number 20040152214
- Publication date Aug 5, 2004
- Sanjeev Aggarwal
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of making a haze free PZT film
- Publication number 20040152215
- Publication date Aug 5, 2004
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a haze free PZT film
- Publication number 20040152216
- Publication date Aug 5, 2004
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF AMORPHOUS ALUMINUM OXIDE ON A CAPACITOR SIDEWALL FOR USE AS...
- Publication number 20040099893
- Publication date May 27, 2004
- J. Scott Martin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a paraelectric semiconductor device
- Publication number 20040023416
- Publication date Feb 5, 2004
- Stephen R. Gilbert
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of forming an FeRAM capacitor having a bottom electrode diff...
- Publication number 20030129771
- Publication date Jul 10, 2003
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming an FeRAM having a multi-layer hard mask and patte...
- Publication number 20030124748
- Publication date Jul 3, 2003
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of preventing reduction of IrOx during PZT formation by met...
- Publication number 20030119271
- Publication date Jun 26, 2003
- Sanjeev Aggarwal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF PREVENTING REDUCTION OF IROX DURING PZT FORMATION BY MET...
- Publication number 20030119273
- Publication date Jun 26, 2003
- Sanjeev Aggarwal
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods of preventing reduction of IrOx during PZT formation by met...
- Publication number 20030119251
- Publication date Jun 26, 2003
- Sanjeev Aggarwal
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF PATTERNING A FERAM CAPACITOR WITH A SIDEWALL DURING BOTTO...
- Publication number 20030119211
- Publication date Jun 26, 2003
- Scott R. Summerfelt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming ferroelectric Pb (Zr, Ti)O3 films
- Publication number 20030091740
- Publication date May 15, 2003
- Stephen R. Gilbert
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Sanjeev Aggarwal

Person

Patents Grantslast 30 patents

Cycling to mitigate imprint in ferroelectric memories

Hardmask for forming ferroelectric capacitors in a semiconductor de...

Method of making a haze free, lead rich PZT film

Ferroelectric capacitor having a substantially planar dielectric la...

Integration flow to prevent delamination from copper

Method of forming and using a hardmask for forming ferroelectric ca...

Surface treatment of copper to improve interconnect formation

Hydrogen barrier for protecting ferroelectric capacitors in a semic...

Use of amorphous aluminum oxide on a capacitor sidewall for use as...

PZT (111) texture through Ir texture improvement

Method of forming an FeRAM having a multi-layer hard mask and patte...

Method of forming an FeRAM capacitor having a bottom electrode diff...

Forming ferroelectric Pb(Zr,Ti)O3 films

Methods of preventing reduction of IrOx during PZT formation by met...

Methods of preventing reduction of IrOx during PZT formation by met...

Method of patterning a FeRAM capacitor with a sidewall during botto...

Test system for ferroelectric materials and noble metal electrodes...

Methods of preventing reduction of IrOx during PZT formation by met...

One step deposition process for the top electrode and hardmask in a...

Methods of preventing reduction of irox during PZT formation by met...

Protection of tungsten alignment mark for FeRAM processing

Methods of preventing reduction of IrOx during PZT formation by met...

Patents Applicationslast 30 patents

CYCLING TO MITIGATE IMPRINT IN FERROELECTRIC MEMORIES

GCIB smoothing of the contact level to improve PZT films

METHOD FOR CLEANING POST-ETCH NOBLE METAL RESIDUES

INTEGRATION FLOW TO PREVENT DELAMINATION FROM COPPER

Ferroelectric memory cells and methods for fabricating ferroelectri...

System and method to form improved seed layer

Hardmask for forming ferroelectric capacitors in a semiconductor de...

Surface treatment of copper to improve interconnect formation

Ferroelectric capacitor having a substantially planar dielectric la...

Ferroelectric capacitor having an oxide electrode template and a me...

Barrier for copper integrated circuits

Optimized ferroelectric material crystallographic texture for enhan...

Method of making a haze free, lead rich PZT film

Hardmask for forming ferroelectric capacitors in a semiconductor de...

Hydrogen barrier for protecting ferroelectric capacitors in a semic...

Surface defect elimination using directed beam method

Method of making a haze free, lead rich PZT film

Method of making a haze free PZT film

Method of making a haze free PZT film

USE OF AMORPHOUS ALUMINUM OXIDE ON A CAPACITOR SIDEWALL FOR USE AS...

Method for forming a paraelectric semiconductor device

Method of forming an FeRAM capacitor having a bottom electrode diff...

Method of forming an FeRAM having a multi-layer hard mask and patte...

Methods of preventing reduction of IrOx during PZT formation by met...

METHODS OF PREVENTING REDUCTION OF IROX DURING PZT FORMATION BY MET...

Methods of preventing reduction of IrOx during PZT formation by met...

METHOD OF PATTERNING A FERAM CAPACITOR WITH A SIDEWALL DURING BOTTO...

Forming ferroelectric Pb (Zr, Ti)O3 films