Shizuo Sawada

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Stacked capacitor-type semiconductor storage device and manufacturi...
- Patent number 7,187,027
- Issue date Mar 6, 2007
- Kabushiki Kaisha Toshiba
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor-type semiconductor storage device and manufacturi...
- Patent number 7,023,044
- Issue date Apr 4, 2006
- Kabushiki Kaisha Toshiba
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor-type semiconductor storage device and manufacturi...
- Patent number 6,846,733
- Issue date Jan 25, 2005
- Kabushiki Kaisha Toshiba
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor-type semiconductor storage device and manufacturi...
- Patent number 6,551,894
- Issue date Apr 22, 2003
- Kabushiki Kaisha Toshiba
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an SOI substrate
- Patent number 6,252,281
- Issue date Jun 26, 2001
- Kabushiki Kaisha Toshiba
- Tadashi Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor-type semiconductor storage device and manufacturi...
- Patent number 6,130,450
- Issue date Oct 10, 2000
- Kabushiki Kaisha Toshiba
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having different impurity concentration wells
- Patent number 5,726,475
- Issue date Mar 10, 1998
- Kabushiki Kaisha Toshiba
- Shizuo Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory having bit lines buried in semiconduct...
- Patent number 5,410,169
- Issue date Apr 25, 1995
- Kabushiki Kaisha Toshiba
- Tadashi Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having different impurity concentration wells
- Patent number 5,374,838
- Issue date Dec 20, 1994
- Kabushiki Kaisha Toshiba
- Shizuo Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and its manufacturing method
- Patent number 5,356,830
- Issue date Oct 18, 1994
- Kabushiki Kaisha Tobshiba
- Susumu Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 5,324,975
- Issue date Jun 28, 1994
- Kabushiki Kaisha Toshiba
- Jumpei Kumagai
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making a semiconductor memory device
- Patent number 5,302,542
- Issue date Apr 12, 1994
- Kabushiki Kaisha Toshiba
- Koichi Kishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 5,302,844
- Issue date Apr 12, 1994
- Kabushiki Kaisha Toshiba
- Tomohisa Mizuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having a bit line constituted by a semi...
- Patent number 5,276,343
- Issue date Jan 4, 1994
- Kabushiki Kaisha Toshiba
- Jumpei Kumagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having different impurity concentration wells
- Patent number 5,260,226
- Issue date Nov 9, 1993
- Kabushiki Kaisha Toshiba
- Shizuo Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having different impurity concentration wells
- Patent number 5,238,860
- Issue date Aug 24, 1993
- Kabushiki Kaisha Toshiba
- Shizuo Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS device having a well layer for controlling threshold voltage
- Patent number 5,210,437
- Issue date May 11, 1993
- Kabushiki Kaisha Toshiba
- Shizuo Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 5,194,752
- Issue date Mar 16, 1993
- Kabushiki Kaisha Toshiba
- Jumpei Kumagai
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory and method of manufacturing the same
- Patent number 5,187,566
- Issue date Feb 16, 1993
- Kabushiki Kaisha Toshiba
- Susumu Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of FETs formed in an elemen...
- Patent number 5,144,388
- Issue date Sep 1, 1992
- Kabushiki Kaisha Toshiba
- Shizuo Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having a stacked capacitor cell structure
- Patent number 5,142,639
- Issue date Aug 25, 1992
- Kabushiki Kaisha Toshiba
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multicell semiconductor memory device
- Patent number 5,111,275
- Issue date May 5, 1992
- Kabushiki Kaisha Toshiba
- Shizuo Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device including forming a...
- Patent number 5,110,766
- Issue date May 5, 1992
- Kabushiki Kaisha Toshiba
- Satoshi Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having different impurity concentration wells
- Patent number 5,079,613
- Issue date Jan 7, 1992
- Kabushiki Kaisha Toshiba
- Shizuo Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 5,041,887
- Issue date Aug 20, 1991
- Kabushiki Kaisha Toshiba
- Jumpei Kumagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a contact hole in semiconductor integrated circuit
- Patent number 5,032,528
- Issue date Jul 16, 1991
- Kabushiki Kaisha Toshiba
- Yoshiaki Asao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device having a phospho si...
- Patent number 5,004,704
- Issue date Apr 2, 1991
- Kabushiki Kaisha Toshiba
- Satoshi Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with stacked capacitor structure and th...
- Patent number 4,951,175
- Issue date Aug 21, 1990
- Kabushiki Kaisha Toshiba
- Kei Kurosawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact portion of semiconductor integrated circuit device
- Patent number 4,916,521
- Issue date Apr 10, 1990
- Kabushiki Kaisha Toshiba
- Susumu Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having high capacitance and improved ra...
- Patent number 4,833,647
- Issue date May 23, 1989
- Kabushiki Kaisha Toshiba
- Satoshi Maeda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Stacked capacitor-type semiconductor storage device and manufacturi...
- Publication number 20060124980
- Publication date Jun 15, 2006
- KABUSHIKI KAISHA TOSHIBA
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked capacitor-type semiconductor storage device and manufacturi...
- Publication number 20040262771
- Publication date Dec 30, 2004
- KABUSHIKI KAISHA TOSHIBA
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked capacitor-type semiconductor storage device and manufacturi...
- Publication number 20030178686
- Publication date Sep 25, 2003
- KABUSHIKI KAISHA TOSHIBA
- Yusuke Kohyama
- H01 - BASIC ELECTRIC ELEMENTS

Shizuo Sawada

Person

Patents Grantslast 30 patents

Stacked capacitor-type semiconductor storage device and manufacturi...

Stacked capacitor-type semiconductor storage device and manufacturi...

Stacked capacitor-type semiconductor storage device and manufacturi...

Stacked capacitor-type semiconductor storage device and manufacturi...

Semiconductor device having an SOI substrate

Stacked capacitor-type semiconductor storage device and manufacturi...

Semiconductor device having different impurity concentration wells

Dynamic random access memory having bit lines buried in semiconduct...

Semiconductor device having different impurity concentration wells

Semiconductor device and its manufacturing method

Semiconductor memory device

Method of making a semiconductor memory device

Semiconductor device and method for manufacturing the same

Semiconductor memory device having a bit line constituted by a semi...

Semiconductor device having different impurity concentration wells

Semiconductor device having different impurity concentration wells

MOS device having a well layer for controlling threshold voltage

Semiconductor memory device

Semiconductor memory and method of manufacturing the same

Semiconductor device having a plurality of FETs formed in an elemen...

Semiconductor memory device having a stacked capacitor cell structure

Multicell semiconductor memory device

Method of manufacturing a semiconductor device including forming a...

Semiconductor device having different impurity concentration wells

Semiconductor memory device

Method of forming a contact hole in semiconductor integrated circuit

Method for manufacturing a semiconductor device having a phospho si...

Semiconductor memory device with stacked capacitor structure and th...

Contact portion of semiconductor integrated circuit device

Semiconductor memory device having high capacitance and improved ra...

Patents Applicationslast 30 patents

Stacked capacitor-type semiconductor storage device and manufacturi...

Stacked capacitor-type semiconductor storage device and manufacturi...

Stacked capacitor-type semiconductor storage device and manufacturi...