Srabanti Chowdhury

Person

San Ramon, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor apparatuses and methods involving diamond and GaN-bas...
- Patent number 11,961,837
- Issue date Apr 16, 2024
- The Board of Trustees of the Leland Stanford Junior University
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional vertically structured MISFET/MESFET
- Patent number 10,903,371
- Issue date Jan 26, 2021
- Lawrence Livermore National Security, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond based current aperture vertical transistor and methods of m...
- Patent number 10,418,475
- Issue date Sep 17, 2019
- Arizona Board of Regents on behalf of Arizona State University
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched vertical power field-effect transistors with improved on-r...
- Patent number 10,312,361
- Issue date Jun 4, 2019
- The Regents of the University of California
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phosphorus incorporation for n-type doping of diamond with (100) an...
- Patent number 10,121,657
- Issue date Nov 6, 2018
- Arizona Board of Regents on behalf of Arizona State University
- Franz A. Koeck
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
III-Nitride transistor including a III-N depleting layer
- Patent number 10,043,896
- Issue date Aug 7, 2018
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride based N polar vertical tunnel transistor
- Patent number 9,893,174
- Issue date Feb 13, 2018
- Arizona Board of Regents on behalf of Arizona State University
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride transistor including a p-type depleting layer
- Patent number 9,842,922
- Issue date Dec 12, 2017
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with integrated hole collectors
- Patent number 9,634,100
- Issue date Apr 25, 2017
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current aperture vertical electron transistors with ammonia molecul...
- Patent number 9,590,088
- Issue date Mar 7, 2017
- The Regents of the University of California
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrodes for semiconductor devices and methods of forming the same
- Patent number 9,520,491
- Issue date Dec 13, 2016
- Transphorm Inc.
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-polar III-nitride transistors
- Patent number 9,490,324
- Issue date Nov 8, 2016
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor electronic components with integrated current limiters
- Patent number 9,443,849
- Issue date Sep 13, 2016
- Transphorm Inc.
- Yifeng Wu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
III-nitride transistor including a p-type depleting layer
- Patent number 9,443,938
- Issue date Sep 13, 2016
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with isolation regions
- Patent number 9,437,707
- Issue date Sep 6, 2016
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with guard rings
- Patent number 9,224,805
- Issue date Dec 29, 2015
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with integrated hole collectors
- Patent number 9,184,275
- Issue date Nov 10, 2015
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming electronic components with increased reliability
- Patent number 9,171,836
- Issue date Oct 27, 2015
- Transphorm Inc.
- Rakesh K. Lal
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Electrodes for semiconductor devices and methods of forming the same
- Patent number 9,171,730
- Issue date Oct 27, 2015
- Transphorm Inc.
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor electronic components with integrated current limiters
- Patent number 9,171,910
- Issue date Oct 27, 2015
- Transphorm Inc.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with isolation regions
- Patent number 9,147,760
- Issue date Sep 29, 2015
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-polar III-nitride transistors
- Patent number 9,093,366
- Issue date Jul 28, 2015
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current aperture vertical electron transistors with ammonia molecul...
- Patent number 8,937,338
- Issue date Jan 20, 2015
- The Regents of the University of California
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with guard rings
- Patent number 8,901,604
- Issue date Dec 2, 2014
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming electronic components with increased reliability
- Patent number 8,860,495
- Issue date Oct 14, 2014
- Transphorm Inc.
- Rakesh K. Lal
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor electronic components with integrated current limiters
- Patent number 8,803,246
- Issue date Aug 12, 2014
- Transphorm Inc.
- Yifeng Wu
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Transistors with isolation regions
- Patent number 8,742,460
- Issue date Jun 3, 2014
- Transphorm Inc.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power semiconductor electronic components with increased relia...
- Patent number 8,598,937
- Issue date Dec 3, 2013
- Transphorm Inc.
- Rakesh K. Lal
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
METHODS AND APPARATUSES INVOLVING DIAMOND GROWTH ON GAN
- Publication number 20230031266
- Publication date Feb 2, 2023
- The Regents of the University of California
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS INVOLVING ACTIVATION OF BURIED DOPANTS USING IO...
- Publication number 20220230883
- Publication date Jul 21, 2022
- The Board of Trustees of the Leland Stanford Junior University
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUSES AND METHODS INVOLVING DIAMOND AND GaN-BAS...
- Publication number 20220223586
- Publication date Jul 14, 2022
- The Board of Trustees of the Leland Stanford Junior University
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS INVOLVING DIAMOND-BASED PHOTOCONDUCTIVE STRUCTURES
- Publication number 20220165905
- Publication date May 26, 2022
- The Board of Trustees of the Leland Stanford Junior University
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT GENERATION FROM RADIATION WITH DIAMOND DIODE-BASED DEVICES...
- Publication number 20200119207
- Publication date Apr 16, 2020
- Arizona Board of Regents on behalf of Arizona State University
- Jason M Holmes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE VERTICAL TRANSISTOR WITH APERTURE REGION FORMED USING I...
- Publication number 20190115448
- Publication date Apr 18, 2019
- The Regents of the University of California
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND BASED CURRENT APERTURE VERTICAL TRANSISTOR AND METHODS OF M...
- Publication number 20180151715
- Publication date May 31, 2018
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR INCLUDING A III-N DEPLETING LAYER
- Publication number 20180102425
- Publication date Apr 12, 2018
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOSPHORUS INCORPORATION FOR N-TYPE DOPING OF DIAMOND WITH (100) AN...
- Publication number 20170330746
- Publication date Nov 16, 2017
- Arizona Board of Regents on behalf of Arizona State University
- FRANZ A. KOECK
- C30 - CRYSTAL GROWTH
Information Patent Application
III-NITRIDE BASED N POLAR VERTICAL TUNNEL TRANSISTOR
- Publication number 20170229569
- Publication date Aug 10, 2017
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL VERTICALLY STRUCTURED MISFET/MESFET
- Publication number 20170200833
- Publication date Jul 13, 2017
- LAWRENCE LIVERMORE NATIONAL SECURITY, LLC
- Adam Conway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCHED VERTICAL POWER FIELD-EFFECT TRANSISTORS WITH IMPROVED ON-R...
- Publication number 20170125574
- Publication date May 4, 2017
- The Regents of the University of Calfornia
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER
- Publication number 20160343840
- Publication date Nov 24, 2016
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH INTEGRATED HOLE COLLECTORS
- Publication number 20160064495
- Publication date Mar 3, 2016
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODES FOR SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20160043211
- Publication date Feb 11, 2016
- TRANSPHORM INC.
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INTEGRATED CURRENT LIMITERS
- Publication number 20160043078
- Publication date Feb 11, 2016
- TRANSPHORM INC.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH ISOLATION REGIONS
- Publication number 20150333147
- Publication date Nov 19, 2015
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-POLAR III-NITRIDE TRANSISTORS
- Publication number 20150287785
- Publication date Oct 8, 2015
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECUL...
- Publication number 20150137137
- Publication date May 21, 2015
- The Regents of the University of California
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH GUARD RINGS
- Publication number 20150054117
- Publication date Feb 26, 2015
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER
- Publication number 20150021552
- Publication date Jan 22, 2015
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ELECTRONIC COMPONENTS WITH INCREASED RELIABILITY
- Publication number 20140377930
- Publication date Dec 25, 2014
- Rakesh K. Lal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INTEGRATED CURRENT LIMITERS
- Publication number 20140299940
- Publication date Oct 9, 2014
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH ISOLATION REGIONS
- Publication number 20140231929
- Publication date Aug 21, 2014
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRODES FOR SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
- Publication number 20140231823
- Publication date Aug 21, 2014
- TRANSPHORM INC.
- Srabanti Chowdhury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ELECTRONIC COMPONENTS WITH INCREASED RELIABILITY
- Publication number 20140094010
- Publication date Apr 3, 2014
- TRANSPHORM INC.
- Rakesh L. Lal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INTEGRATED CURRENT LIMITERS
- Publication number 20140015066
- Publication date Jan 16, 2014
- TRANSPHORM INC.
- Yifeng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH INTEGRATED HOLE COLLECTORS
- Publication number 20140001557
- Publication date Jan 2, 2014
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-POLAR III-NITRIDE TRANSISTORS
- Publication number 20130264578
- Publication date Oct 10, 2013
- TRANSPHORM INC.
- Umesh Mishra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INCREASED RELIA...
- Publication number 20130088280
- Publication date Apr 11, 2013
- TRANSPHORM INC.
- Rakesh K. Lal
- H01 - BASIC ELECTRIC ELEMENTS

Srabanti Chowdhury

Person

Patents Grantslast 30 patents

Semiconductor apparatuses and methods involving diamond and GaN-bas...

Three dimensional vertically structured MISFET/MESFET

Diamond based current aperture vertical transistor and methods of m...

Trenched vertical power field-effect transistors with improved on-r...

Phosphorus incorporation for n-type doping of diamond with (100) an...

III-Nitride transistor including a III-N depleting layer

III-nitride based N polar vertical tunnel transistor

III-nitride transistor including a p-type depleting layer

Semiconductor devices with integrated hole collectors

Current aperture vertical electron transistors with ammonia molecul...

Electrodes for semiconductor devices and methods of forming the same

N-polar III-nitride transistors

Semiconductor electronic components with integrated current limiters

III-nitride transistor including a p-type depleting layer

Transistors with isolation regions

Semiconductor devices with guard rings

Semiconductor devices with integrated hole collectors

Method of forming electronic components with increased reliability

Electrodes for semiconductor devices and methods of forming the same

Semiconductor electronic components with integrated current limiters

Transistors with isolation regions

N-polar III-nitride transistors

Current aperture vertical electron transistors with ammonia molecul...

Semiconductor devices with guard rings

Method of forming electronic components with increased reliability

Semiconductor electronic components with integrated current limiters

Transistors with isolation regions

High power semiconductor electronic components with increased relia...

Patents Applicationslast 30 patents

METHODS AND APPARATUSES INVOLVING DIAMOND GROWTH ON GAN

DEVICES AND METHODS INVOLVING ACTIVATION OF BURIED DOPANTS USING IO...

SEMICONDUCTOR APPARATUSES AND METHODS INVOLVING DIAMOND AND GaN-BAS...

DEVICES AND METHODS INVOLVING DIAMOND-BASED PHOTOCONDUCTIVE STRUCTURES

CURRENT GENERATION FROM RADIATION WITH DIAMOND DIODE-BASED DEVICES...

III-NITRIDE VERTICAL TRANSISTOR WITH APERTURE REGION FORMED USING I...

DIAMOND BASED CURRENT APERTURE VERTICAL TRANSISTOR AND METHODS OF M...

III-NITRIDE TRANSISTOR INCLUDING A III-N DEPLETING LAYER

PHOSPHORUS INCORPORATION FOR N-TYPE DOPING OF DIAMOND WITH (100) AN...

III-NITRIDE BASED N POLAR VERTICAL TUNNEL TRANSISTOR

THREE DIMENSIONAL VERTICALLY STRUCTURED MISFET/MESFET

TRENCHED VERTICAL POWER FIELD-EFFECT TRANSISTORS WITH IMPROVED ON-R...

III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER

SEMICONDUCTOR DEVICES WITH INTEGRATED HOLE COLLECTORS

ELECTRODES FOR SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INTEGRATED CURRENT LIMITERS

TRANSISTORS WITH ISOLATION REGIONS

N-POLAR III-NITRIDE TRANSISTORS

CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECUL...

SEMICONDUCTOR DEVICES WITH GUARD RINGS

III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER

METHOD OF FORMING ELECTRONIC COMPONENTS WITH INCREASED RELIABILITY

SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INTEGRATED CURRENT LIMITERS

TRANSISTORS WITH ISOLATION REGIONS

ELECTRODES FOR SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME

METHOD OF FORMING ELECTRONIC COMPONENTS WITH INCREASED RELIABILITY

SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INTEGRATED CURRENT LIMITERS

SEMICONDUCTOR DEVICES WITH INTEGRATED HOLE COLLECTORS

N-POLAR III-NITRIDE TRANSISTORS

HIGH POWER SEMICONDUCTOR ELECTRONIC COMPONENTS WITH INCREASED RELIA...