Tanmay KUMAR

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Neuromorphic logic for an array of high on/off ratio non-volatile m...
- Patent number 10,489,700
- Issue date Nov 26, 2019
- Crossbar, Inc.
- Mehdi Asnaashari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Barrier modulated cell structures with intrinsic vertical bit line...
- Patent number 10,388,870
- Issue date Aug 20, 2019
- SanDisk Technologies LLC
- Perumal Ratnam
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device containing carbon barrier and method of mak...
- Patent number 10,340,449
- Issue date Jul 2, 2019
- SanDisk Technologies LLC
- Ming-Che Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods and apparatus for three-dimensional nonvolatile memory
- Patent number 10,283,567
- Issue date May 7, 2019
- SanDisk Technologies LLC
- Juan Saenz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for three-dimensional nonvolatile memory
- Patent number 10,283,708
- Issue date May 7, 2019
- SanDisk Technologies LLC
- Ming-Che Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low power barrier modulated cell for storage class memory
- Patent number 10,276,792
- Issue date Apr 30, 2019
- SanDisk Technologies LLC
- Ming-Che Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Recessed high voltage metal oxide semiconductor transistor for RRAM...
- Patent number 10,115,819
- Issue date Oct 30, 2018
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for three-dimensional nonvolatile memory
- Patent number 10,109,680
- Issue date Oct 23, 2018
- SanDisk Technologies LLC
- Sebastian J. M. Wicklein
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-gate vertical field effect transistor with channel strips lat...
- Patent number 10,032,908
- Issue date Jul 24, 2018
- SanDisk Technologies LLC
- Perumal Ratnam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Volatile memory device employing a resistive memory element
- Patent number 9,953,697
- Issue date Apr 24, 2018
- SanDisk Technologies LLC
- Tanmay Kumar
- G11 - INFORMATION STORAGE
Information Patent Grant
Low power barrier modulated cell for storage class memory
- Patent number 9,923,140
- Issue date Mar 20, 2018
- SanDisk Technologies LLC
- Ming-Che Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device having sidewall spacer electrode and method...
- Patent number 9,806,256
- Issue date Oct 31, 2017
- SanDisk Technologies LLC
- Ming-Che Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Enhanced erasing of two-terminal memory
- Patent number 9,805,794
- Issue date Oct 31, 2017
- Crossbar, Inc.
- Zhi Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Low temperature P+ polycrystalline silicon material for non-volatil...
- Patent number 9,793,474
- Issue date Oct 17, 2017
- Crossbar, Inc.
- Xin Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for three-dimensional nonvolatile memory
- Patent number 9,768,180
- Issue date Sep 19, 2017
- SanDisk Technologies LLC
- Guangle Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Noble metal / non-noble metal electrode for RRAM applications
- Patent number 9,735,358
- Issue date Aug 15, 2017
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field programmable gate array utilizing two-terminal non-volatile m...
- Patent number 9,729,155
- Issue date Aug 8, 2017
- Crossbar, Inc.
- Hagop Nazarian
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Resistive memory device and fabrication methods
- Patent number 9,673,255
- Issue date Jun 6, 2017
- Crossbar, Inc.
- Sung Hyun Jo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced programming of two-terminal memory
- Patent number 9,613,694
- Issue date Apr 4, 2017
- Crossbar, Inc.
- Zhi Li
- G11 - INFORMATION STORAGE
Information Patent Grant
MLC OTP operation with diode behavior in ZnO RRAM devices for 3D me...
- Patent number 9,502,102
- Issue date Nov 22, 2016
- Crossbar, Inc.
- Tanmay Kumar
- G11 - INFORMATION STORAGE
Information Patent Grant
Dielectric-based memory cells having multi-level one-time programma...
- Patent number 9,472,301
- Issue date Oct 18, 2016
- SanDisk Technologies LLC
- Abhijit Bandyopadhyay
- G11 - INFORMATION STORAGE
Information Patent Grant
MLC OTP operation in A-Si RRAM
- Patent number 9,373,410
- Issue date Jun 21, 2016
- Crossbar, Inc.
- Tanmay Kumar
- G11 - INFORMATION STORAGE
Information Patent Grant
Low temperature in-situ doped silicon-based conductor material for...
- Patent number 9,343,668
- Issue date May 17, 2016
- Crossbar, Inc.
- Steve Maxwell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Soak time programming for two-terminal memory
- Patent number 9,336,876
- Issue date May 10, 2016
- Crossbar, Inc.
- Tanmay Kumar
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory cell with solid state diode
- Patent number 9,324,942
- Issue date Apr 26, 2016
- Crossbar, Inc.
- Hagop Nazarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pre-conditioning two-terminal memory for increased endurance
- Patent number 9,245,622
- Issue date Jan 26, 2016
- Crossbar, Inc.
- Tanmay Kumar
- G11 - INFORMATION STORAGE
Information Patent Grant
Field programmable gate array utilizing two-terminal non-volatile m...
- Patent number 9,191,000
- Issue date Nov 17, 2015
- Crossbar, Inc.
- Hagop Nazarian
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Surface treatment to improve resistive-switching characteristics
- Patent number 9,178,149
- Issue date Nov 3, 2015
- Intermolecular, Inc.
- Michael Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level cell operation in silver/amorphous silicon RRAM
- Patent number 9,058,865
- Issue date Jun 16, 2015
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Field programmable gate array utilizing two-terminal non-volatile m...
- Patent number 9,054,702
- Issue date Jun 9, 2015
- Crossbar, Inc.
- Hagop Nazarian
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
BARRIER MODULATED CELL STRUCTURES WITH INTRINSIC VERTICAL BIT LINE...
- Publication number 20190123276
- Publication date Apr 25, 2019
- SanDisk Technologies LLC
- Perumal Ratnam
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE CONTAINING CARBON BARRIER AND METHOD OF MAK...
- Publication number 20180351093
- Publication date Dec 6, 2018
- SanDisk Technologies LLC
- Ming-Che WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR PROGRAMMING BARRIER MODULATED MEMORY CELLS
- Publication number 20180277208
- Publication date Sep 27, 2018
- SanDisk Technologies LLC
- Deepak Kamalanathan
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY
- Publication number 20180261766
- Publication date Sep 13, 2018
- SanDisk Technologies LLC
- Ming-Che Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY
- Publication number 20180247975
- Publication date Aug 30, 2018
- SanDisk Technologies LLC
- Juan Saenz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-GATE VERTICAL FIELD EFFECT TRANSISTOR WITH CHANNEL STRIPS LAT...
- Publication number 20180197988
- Publication date Jul 12, 2018
- SanDisk Technologies LLC
- Perumal RATNAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY
- Publication number 20180166559
- Publication date Jun 14, 2018
- SanDisk Technologies LLC
- Guangle Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW POWER BARRIER MODULATED CELL FOR STORAGE CLASS MEMORY
- Publication number 20180159033
- Publication date Jun 7, 2018
- SanDisk Technologies LLC
- Ming-Che Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLATILE MEMORY DEVICE EMPLOYING A RESISTIVE MEMORY ELEMENT
- Publication number 20170309324
- Publication date Oct 26, 2017
- SanDisk Technologies LLC
- Tanmay KUMAR
- G11 - INFORMATION STORAGE
Information Patent Application
LOW POWER BARRIER MODULATED CELL FOR STORAGE CLASS MEMORY
- Publication number 20170309819
- Publication date Oct 26, 2017
- SanDisk Technologies LLC
- Ming-Che Wu
- G11 - INFORMATION STORAGE
Information Patent Application
RECESSED HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR TRANSISTOR FOR RRAM...
- Publication number 20160351625
- Publication date Dec 1, 2016
- Crossbar, Inc.
- Harry Yue Gee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOBLE METAL / NON-NOBLE METAL ELECTRODE FOR RRAM APPLICATIONS
- Publication number 20160233422
- Publication date Aug 11, 2016
- Crossbar, Inc.
- Sung Hyun JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC-BASED MEMORY CELLS HAVING MULTI-LEVEL ONE-TIME PROGRAMMA...
- Publication number 20150325310
- Publication date Nov 12, 2015
- SanDisk 3D LLC
- Abhijit Bandyopadhyay
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTIVE MEMORY DEVICE AND FABRICATION METHODS
- Publication number 20150144863
- Publication date May 28, 2015
- Crossbar, Inc.
- Sung Hyun JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE TIME PROGRAMMABLE AND MULTI-LEVEL, TWO-TERMINAL MEMORY CELL
- Publication number 20150129829
- Publication date May 14, 2015
- Crossbar, Inc.
- Tanmay KUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PROGRAMMABLE GATE ARRAY UTILIZING TWO-TERMINAL NON-VOLATILE M...
- Publication number 20140327470
- Publication date Nov 6, 2014
- Hagop NAZARIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface Treatment to Improve Resistive-Switching Characteristics
- Publication number 20140322887
- Publication date Oct 30, 2014
- Michael Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD PROGRAMMABLE GATE ARRAY UTILIZING TWO-TERMINAL NON-VOLATILE M...
- Publication number 20140320166
- Publication date Oct 30, 2014
- Crossbar, Inc.
- Hagop Nazarian
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
FIELD PROGRAMMABLE GATE ARRAY UTILIZING TWO-TERMINAL NON-VOLATILE M...
- Publication number 20140292368
- Publication date Oct 2, 2014
- Hagop NAZARIAN
- G11 - INFORMATION STORAGE
Information Patent Application
LOW TEMPERATURE IN-SITU DOPED SILICON-BASED CONDUCTOR MATERIAL FOR...
- Publication number 20140264250
- Publication date Sep 18, 2014
- Crossbar, Inc.
- Steve MAXWELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMORPHOUS SILICON RRAM WITH NON-LINEAR DEVICE AND OPERATION
- Publication number 20140269001
- Publication date Sep 18, 2014
- Crossbar, Inc.
- Tanmay KUMAR
- G11 - INFORMATION STORAGE
Information Patent Application
DIELECTRIC-BASED MEMORY CELLS HAVING MULTI-LEVEL ONE-TIME PROGRAMMA...
- Publication number 20140241031
- Publication date Aug 28, 2014
- SanDisk 3D LLC
- Abhijit Bandyopadhyay
- G11 - INFORMATION STORAGE
Information Patent Application
LOW TEMPERATURE P+ POLYCRYSTALLINE SILICON MATERIAL FOR NON-VOLATIL...
- Publication number 20140191180
- Publication date Jul 10, 2014
- Crossbar, Inc.
- Xin SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY CELL COMPRISING A DIODE AND A RESISTANCE-SWITCHI...
- Publication number 20140166968
- Publication date Jun 19, 2014
- SanDisk 3D LLC
- Scott Brad Herner
- G11 - INFORMATION STORAGE
Information Patent Application
NOBLE METAL / NON-NOBLE METAL ELECTRODE FOR RRAM APPLICATIONS
- Publication number 20140158968
- Publication date Jun 12, 2014
- Crossbar, Inc.
- Sung Hyun JO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface Treatment to Improve Resistive-Switching Characteristics
- Publication number 20140001430
- Publication date Jan 2, 2014
- INTERMOLECULAR INC.
- Michael Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIIIM DIODE HAVING LANTHANUM OXIDE
- Publication number 20130181181
- Publication date Jul 18, 2013
- SanDisk 3D LLC
- Deepak C. Sekar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONVOLATILE MEMORY CELL COMPRISING A DIODE AND A RESISTANCE-SWITCHI...
- Publication number 20130121061
- Publication date May 16, 2013
- SanDisk 3D LLC
- Scott Brad Herner
- G11 - INFORMATION STORAGE
Information Patent Application
FIELD PROGRAMMABLE GATE ARRAY UTILIZING TWO-TERMINAL NON-VOLATILE M...
- Publication number 20130027081
- Publication date Jan 31, 2013
- Crossbar, Inc.
- Hagop Nazarian
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
FIELD PROGRAMMABLE GATE ARRAY UTILIZING TWO-TERMINAL NON-VOLATILE M...
- Publication number 20130027079
- Publication date Jan 31, 2013
- Crossbar, Inc.
- Hagop Nazarian
- G11 - INFORMATION STORAGE

Tanmay KUMAR

Person

Patents Grantslast 30 patents

Neuromorphic logic for an array of high on/off ratio non-volatile m...

Barrier modulated cell structures with intrinsic vertical bit line...

Resistive memory device containing carbon barrier and method of mak...

Methods and apparatus for three-dimensional nonvolatile memory

Methods and apparatus for three-dimensional nonvolatile memory

Low power barrier modulated cell for storage class memory

Recessed high voltage metal oxide semiconductor transistor for RRAM...

Methods and apparatus for three-dimensional nonvolatile memory

Multi-gate vertical field effect transistor with channel strips lat...

Volatile memory device employing a resistive memory element

Low power barrier modulated cell for storage class memory

Resistive memory device having sidewall spacer electrode and method...

Enhanced erasing of two-terminal memory

Low temperature P+ polycrystalline silicon material for non-volatil...

Methods and apparatus for three-dimensional nonvolatile memory

Noble metal / non-noble metal electrode for RRAM applications

Field programmable gate array utilizing two-terminal non-volatile m...

Resistive memory device and fabrication methods

Enhanced programming of two-terminal memory

MLC OTP operation with diode behavior in ZnO RRAM devices for 3D me...

Dielectric-based memory cells having multi-level one-time programma...

MLC OTP operation in A-Si RRAM

Low temperature in-situ doped silicon-based conductor material for...

Soak time programming for two-terminal memory

Resistive memory cell with solid state diode

Pre-conditioning two-terminal memory for increased endurance

Field programmable gate array utilizing two-terminal non-volatile m...

Surface treatment to improve resistive-switching characteristics

Multi-level cell operation in silver/amorphous silicon RRAM

Field programmable gate array utilizing two-terminal non-volatile m...

Patents Applicationslast 30 patents

BARRIER MODULATED CELL STRUCTURES WITH INTRINSIC VERTICAL BIT LINE...

RESISTIVE MEMORY DEVICE CONTAINING CARBON BARRIER AND METHOD OF MAK...

METHODS AND APPARATUS FOR PROGRAMMING BARRIER MODULATED MEMORY CELLS

METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY

METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY

MULTI-GATE VERTICAL FIELD EFFECT TRANSISTOR WITH CHANNEL STRIPS LAT...

METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY

LOW POWER BARRIER MODULATED CELL FOR STORAGE CLASS MEMORY

VOLATILE MEMORY DEVICE EMPLOYING A RESISTIVE MEMORY ELEMENT

LOW POWER BARRIER MODULATED CELL FOR STORAGE CLASS MEMORY

RECESSED HIGH VOLTAGE METAL OXIDE SEMICONDUCTOR TRANSISTOR FOR RRAM...

NOBLE METAL / NON-NOBLE METAL ELECTRODE FOR RRAM APPLICATIONS

DIELECTRIC-BASED MEMORY CELLS HAVING MULTI-LEVEL ONE-TIME PROGRAMMA...

RESISTIVE MEMORY DEVICE AND FABRICATION METHODS

ONE TIME PROGRAMMABLE AND MULTI-LEVEL, TWO-TERMINAL MEMORY CELL

FIELD PROGRAMMABLE GATE ARRAY UTILIZING TWO-TERMINAL NON-VOLATILE M...

Surface Treatment to Improve Resistive-Switching Characteristics

FIELD PROGRAMMABLE GATE ARRAY UTILIZING TWO-TERMINAL NON-VOLATILE M...

FIELD PROGRAMMABLE GATE ARRAY UTILIZING TWO-TERMINAL NON-VOLATILE M...

LOW TEMPERATURE IN-SITU DOPED SILICON-BASED CONDUCTOR MATERIAL FOR...

AMORPHOUS SILICON RRAM WITH NON-LINEAR DEVICE AND OPERATION

DIELECTRIC-BASED MEMORY CELLS HAVING MULTI-LEVEL ONE-TIME PROGRAMMA...

LOW TEMPERATURE P+ POLYCRYSTALLINE SILICON MATERIAL FOR NON-VOLATIL...

NONVOLATILE MEMORY CELL COMPRISING A DIODE AND A RESISTANCE-SWITCHI...

NOBLE METAL / NON-NOBLE METAL ELECTRODE FOR RRAM APPLICATIONS

Surface Treatment to Improve Resistive-Switching Characteristics

MIIIM DIODE HAVING LANTHANUM OXIDE

NONVOLATILE MEMORY CELL COMPRISING A DIODE AND A RESISTANCE-SWITCHI...

FIELD PROGRAMMABLE GATE ARRAY UTILIZING TWO-TERMINAL NON-VOLATILE M...

FIELD PROGRAMMABLE GATE ARRAY UTILIZING TWO-TERMINAL NON-VOLATILE M...