Tao CHU

Person

Mechanicville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Stacked-gate transistors
- Patent number 11,404,415
- Issue date Aug 2, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming an IC product comprising transistor devices with...
- Patent number 11,315,835
- Issue date Apr 26, 2022
- GLOBALFOUNDRIES U.S. INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with independently-tuned threshold voltages
- Patent number 11,264,477
- Issue date Mar 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Xiaoli He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage gate stack for a transistor device and methods of makin...
- Patent number 11,158,635
- Issue date Oct 26, 2021
- GLOBALFOUNDRIES U.S. INC.
- Dali Shao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming source/drain regions of a FinFET device and the...
- Patent number 10,964,598
- Issue date Mar 30, 2021
- GLOBALFOUNDRIES U.S. INC.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate for a field effect transistor and method
- Patent number 10,833,169
- Issue date Nov 10, 2020
- GLOBALFOUNDRIES Inc.
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut inside replacement metal gate trench to mitigate N-P proximity...
- Patent number 10,658,363
- Issue date May 19, 2020
- GLOBALFOUNDRIES Inc.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut inside replacement metal gate trench to mitigate N-P proximity...
- Patent number 10,446,550
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERAL ETCHING PROCESS TO REMOVE METAL GATE FOOT STRUCTURES
- Publication number 20250087530
- Publication date Mar 13, 2025
- Intel Corporation
- Chiao-Ti Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH-GATE STRUCTURE WITH AN AIRGAP SPACER IN A SEMICONDUCTOR DEVICE
- Publication number 20250089310
- Publication date Mar 13, 2025
- Intel Corporation
- Ting-Hsiang Hung
Information Patent Application
MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY US...
- Publication number 20250006579
- Publication date Jan 2, 2025
- Intel Corporation
- Avijit Barik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES...
- Publication number 20250006734
- Publication date Jan 2, 2025
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROUNDED NANORIBBONS WITH REGROWN CAPS
- Publication number 20240321962
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT
- Publication number 20240321887
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT
- Publication number 20240321859
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES
- Publication number 20240321987
- Publication date Sep 26, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH BACKSIDE FIN TRIM ISOLATION
- Publication number 20240304619
- Publication date Sep 12, 2024
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NANORIBBON-BASED TRANSISTORS USING PATTERNED FOUNDATION
- Publication number 20240304621
- Publication date Sep 12, 2024
- Intel Corporation
- Chiao-Ti Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON-BASED TRANSISTORS WITH ETCH STOP LAYER TO ASSIST SUBFIN...
- Publication number 20240290835
- Publication date Aug 29, 2024
- Intel Corporation
- Chiao-Ti Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS
- Publication number 20240290788
- Publication date Aug 29, 2024
- Intel Corporation
- Guowei Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...
- Publication number 20240222484
- Publication date Jul 4, 2024
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN CONTACTS HAVING...
- Publication number 20240178273
- Publication date May 30, 2024
- Intel Corporation
- Chiao-Ti HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE WITH RECESSED TRENCH CONTACT AND DEEP...
- Publication number 20240178101
- Publication date May 30, 2024
- Intel Corporation
- Tao CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-LOW VOLTAGE TRANSISTOR CELL DESIGN USING GATE CUT LAYOUT
- Publication number 20240113118
- Publication date Apr 4, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NECKED RIBBON FOR BETTER N WORKFUNCTION FILLING AND DEVICE PERFORMANCE
- Publication number 20240105770
- Publication date Mar 28, 2024
- Intel Corporation
- Tao CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMI...
- Publication number 20240105718
- Publication date Mar 28, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION
- Publication number 20240088217
- Publication date Mar 14, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL REGIONS EXTENDING BETWEEN INNER GATE SPACERS
- Publication number 20240088265
- Publication date Mar 14, 2024
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN TRIM PLUG STRUCTURES WITH METAL FOR IMPARTING CHANNEL STRESS
- Publication number 20240088292
- Publication date Mar 14, 2024
- Intel Corporation
- Tao CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE PERFORMANCE TUNING BY DEEP TRENCH VIA (DVB) PROXIMITY EFFECT...
- Publication number 20230317594
- Publication date Oct 5, 2023
- Tao CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE PROCESSING OF FINS IN FIN BASED TRANSISTOR DEVICES
- Publication number 20230307449
- Publication date Sep 28, 2023
- Intel Corporation
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW LEAKAGE GATE STACK FOR A TRANSISTOR DEVICE AND METHODS OF MAKIN...
- Publication number 20210305251
- Publication date Sep 30, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Dali Shao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN STRUCTURES OF FINFET DEVICES
- Publication number 20210091222
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- TAO CHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH INDEPENDENTLY-TUNED THRESHOLD VOLTAGES
- Publication number 20210091202
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Xiaoli He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SOURCE/DRAIN REGIONS OF A FINFET DEVICE AND THE...
- Publication number 20210020515
- Publication date Jan 21, 2021
- GLOBALFOUNDRIES INC.
- Bingwu Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED-GATE TRANSISTORS
- Publication number 20210005605
- Publication date Jan 7, 2021
- GLOBALFOUNDRIES INC.
- Wenjun LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE FOR A FIELD EFFECT TRANSISTOR AND METHOD
- Publication number 20200335602
- Publication date Oct 22, 2020
- GLOBALFOUNDRIES INC.
- Tao Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING AN IC PRODUCT COMPRISING TRANSISTOR DEVICES WITH...
- Publication number 20200286790
- Publication date Sep 10, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Stacked-gate transistors

Methods of forming an IC product comprising transistor devices with...

Field-effect transistors with independently-tuned threshold voltages

Low leakage gate stack for a transistor device and methods of makin...

Methods of forming source/drain regions of a FinFET device and the...

Metal gate for a field effect transistor and method

Cut inside replacement metal gate trench to mitigate N-P proximity...

Cut inside replacement metal gate trench to mitigate N-P proximity...

Patents Applicationslast 30 patents

LATERAL ETCHING PROCESS TO REMOVE METAL GATE FOOT STRUCTURES

THROUGH-GATE STRUCTURE WITH AN AIRGAP SPACER IN A SEMICONDUCTOR DEVICE

MITIGATION OF THRESHOLD VOLTAGE SHIFT IN BACKSIDE POWER DELIVERY US...

PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES...

ROUNDED NANORIBBONS WITH REGROWN CAPS

INTEGRATED CIRCUIT DEVICE WITH REDUCED N-P BOUNDARY EFFECT

INTEGRATED CIRCUIT DEVICE WITH PERFORMANCE-ENHANCING LAYOUT

LONG CHANNEL FIN TRANSISTORS IN NANORIBBON-BASED DEVICES

INTEGRATED CIRCUIT DEVICE WITH BACKSIDE FIN TRIM ISOLATION

FABRICATION OF NANORIBBON-BASED TRANSISTORS USING PATTERNED FOUNDATION

NANORIBBON-BASED TRANSISTORS WITH ETCH STOP LAYER TO ASSIST SUBFIN...

METAL GATE FABRICATION FOR NANORIBBON-BASED TRANSISTORS

TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...

INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN CONTACTS HAVING...

INTEGRATED CIRCUIT STRUCTURE WITH RECESSED TRENCH CONTACT AND DEEP...

ULTRA-LOW VOLTAGE TRANSISTOR CELL DESIGN USING GATE CUT LAYOUT

NECKED RIBBON FOR BETTER N WORKFUNCTION FILLING AND DEVICE PERFORMANCE

INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMI...

BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION

EPITAXIAL REGIONS EXTENDING BETWEEN INNER GATE SPACERS

FIN TRIM PLUG STRUCTURES WITH METAL FOR IMPARTING CHANNEL STRESS

DEVICE PERFORMANCE TUNING BY DEEP TRENCH VIA (DVB) PROXIMITY EFFECT...

BACKSIDE PROCESSING OF FINS IN FIN BASED TRANSISTOR DEVICES

LOW LEAKAGE GATE STACK FOR A TRANSISTOR DEVICE AND METHODS OF MAKIN...

FIN STRUCTURES OF FINFET DEVICES

FIELD-EFFECT TRANSISTORS WITH INDEPENDENTLY-TUNED THRESHOLD VOLTAGES

METHODS OF FORMING SOURCE/DRAIN REGIONS OF A FINFET DEVICE AND THE...

STACKED-GATE TRANSISTORS

METAL GATE FOR A FIELD EFFECT TRANSISTOR AND METHOD

METHODS OF FORMING AN IC PRODUCT COMPRISING TRANSISTOR DEVICES WITH...