Toshiro Usami

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a silicon semiconductor device using doping durin...
- Patent number 5,612,236
- Issue date Mar 18, 1997
- Kabushiki Kaisha Toshiba
- Yuuichi Mikata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a through hole in multi-layer insulating films
- Patent number 5,378,652
- Issue date Jan 3, 1995
- Kabushiki Kaisha Toshiba
- Shuichi Samata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device silicon via fill formed in multiple dielectric...
- Patent number 5,291,058
- Issue date Mar 1, 1994
- Kabushiki Kaisha Toshiba
- Shuichi Samata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,238,859
- Issue date Aug 24, 1993
- Kabushiki Kaisha Toshiba
- Hiroyuki Kamijo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state imaging device applicable to high sensitivity color cam...
- Patent number 5,210,400
- Issue date May 11, 1993
- Kabushiki Kaisha Toshiba
- Toshiro Usami
- G02 - OPTICS
Information Patent Grant
Vertical field effect transistor with an extended polysilicon chann...
- Patent number 5,181,088
- Issue date Jan 19, 1993
- Kabushiki Kaisha Toshiba
- Yuuichi Mikata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor memory device having a floa...
- Patent number 5,149,666
- Issue date Sep 22, 1992
- Kabushiki Kaisha Toshiba
- Yuuichi Mikata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,032,535
- Issue date Jul 16, 1991
- Kabushiki Kaisha Toshiba
- Hiroyuki Kamijo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method of manufacturing the same
- Patent number 5,031,010
- Issue date Jul 9, 1991
- Kabushiki Kaisha Toshiba
- Yuuichi Mikata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect-recognition processing apparatus
- Patent number 4,958,373
- Issue date Sep 18, 1990
- Kabushiki Kaisha Toshiba
- Toshiro Usami
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor memory device for storing image data
- Patent number 4,893,273
- Issue date Jan 9, 1990
- Kabushiki Kaisha Toshiba
- Toshiro Usami
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 4,879,585
- Issue date Nov 7, 1989
- Kabushiki Kaisha Toshiba
- Toshiro Usami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing SiO.sub.2 -Si interface for floating gate s...
- Patent number 4,597,159
- Issue date Jul 1, 1986
- Kabushiki Kaisha Toshiba
- Toshiro Usami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for producing a silicon single crystal from a silicon melt
- Patent number 4,515,755
- Issue date May 7, 1985
- Toshiba Ceramics Co., Ltd.
- Shuitsu Matsuo
- C30 - CRYSTAL GROWTH

Toshiro Usami

Person

Patents Grantslast 30 patents

Method of forming a silicon semiconductor device using doping durin...

Method of making a through hole in multi-layer insulating films

Semiconductor device silicon via fill formed in multiple dielectric...

Method of manufacturing semiconductor device

Solid-state imaging device applicable to high sensitivity color cam...

Vertical field effect transistor with an extended polysilicon chann...

Method of manufacturing a semiconductor memory device having a floa...

Method of manufacturing semiconductor device

Semiconductor memory device and method of manufacturing the same

Defect-recognition processing apparatus

Semiconductor memory device for storing image data

Semiconductor device

Method of manufacturing SiO.sub.2 -Si interface for floating gate s...

Apparatus for producing a silicon single crystal from a silicon melt