Victor J. Silvestri

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and apparatus for real-time, in-situ endpoint detection and...
- Patent number 5,392,124
- Issue date Feb 21, 1995
- International Business Machines Corporation
- Steven G. Barbee
- G01 - MEASURING TESTING
Information Patent Grant
In situ, non-destructive CVD surface monitor
- Patent number 5,386,121
- Issue date Jan 31, 1995
- International Business Machines Corporation
- Steven G. Barbee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for real-time film surface detection for large...
- Patent number 5,381,234
- Issue date Jan 10, 1995
- International Business Machines Corporation
- Steven G. Barbee
- G01 - MEASURING TESTING
Information Patent Grant
Transistor structure utilizing a deposited epitaxial base region
- Patent number 5,315,151
- Issue date May 24, 1994
- International Business Machines Corporation
- Chang-Ming Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a thin silicon-on-insulator layer
- Patent number 5,234,535
- Issue date Aug 10, 1993
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated films using an air dielectric
- Patent number 5,232,866
- Issue date Aug 3, 1993
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried air dielectric isolation of silicon islands
- Patent number 5,227,658
- Issue date Jul 13, 1993
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interferometer for in situ measurement of thin film thickness changes
- Patent number 5,220,405
- Issue date Jun 15, 1993
- International Business Machines Corporation
- Steven G. Barbee
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor device structure employing a multi-level epitaxial st...
- Patent number 5,159,429
- Issue date Oct 27, 1992
- International Business Machines Corporation
- Robert E. Bendernagel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device structure employing...
- Patent number 5,061,652
- Issue date Oct 29, 1991
- International Business Machines Corporation
- Robert E. Bendernagel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of dielectrically isolated integrated circuit devices
- Patent number 4,960,717
- Issue date Oct 2, 1990
- International Business Machines Corporation
- Victor J. Silvestri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of trench filling
- Patent number 4,924,284
- Issue date May 8, 1990
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxial growth structure and isolation
- Patent number 4,908,691
- Issue date Mar 13, 1990
- International Business Machines Corporation
- Victor J. Silvestri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making defect free silicon islands using SEG
- Patent number 4,758,531
- Issue date Jul 19, 1988
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of trench filling
- Patent number 4,745,081
- Issue date May 17, 1988
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxial growth structure and isolation
- Patent number 4,728,624
- Issue date Mar 1, 1988
- International Business Machines Corporation
- Victor J. Silvestri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a void free isolation pattern and resulting stru...
- Patent number 4,689,656
- Issue date Aug 25, 1987
- International Business Machines Corporation
- Victor J. Silvestri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar void free isolation structure
- Patent number 4,680,614
- Issue date Jul 14, 1987
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a void free isolation structure utilizing etch a...
- Patent number 4,528,047
- Issue date Jul 9, 1985
- International Business Machines Corporation
- Klaus D. Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a void free isolation pattern utilizing etch and...
- Patent number 4,526,631
- Issue date Jul 2, 1985
- International Business Machines Corporation
- Victor Silvestri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of filling trenches with silicon and structures
- Patent number 4,473,598
- Issue date Sep 25, 1984
- International Business Machines Corporation
- Linda M. Ephrath
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried injector memory cell formed from vertical complementary bipo...
- Patent number 4,425,574
- Issue date Jan 10, 1984
- International Business Machines Corporation
- Victor J. Silvestri
- G11 - INFORMATION STORAGE
Information Patent Grant
Porous film heat transfer
- Patent number 4,381,818
- Issue date May 3, 1983
- International Business Machines Corporation
- Kenneth S. Sachar
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of fabricating buried injector memory cell formed from verti...
- Patent number 4,274,891
- Issue date Jun 23, 1981
- International Business Machines Corporation
- Victor J. Silvestri
- G11 - INFORMATION STORAGE
Information Patent Grant
Chemical vapor deposition of dielectric films containing Al, N, and Si
- Patent number 3,974,003
- Issue date Aug 10, 1976
- IBM
- Stanley Zirinsky
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Victor J. Silvestri

Person

Patents Grantslast 30 patents

Method and apparatus for real-time, in-situ endpoint detection and...

In situ, non-destructive CVD surface monitor

Method and apparatus for real-time film surface detection for large...

Transistor structure utilizing a deposited epitaxial base region

Method of producing a thin silicon-on-insulator layer

Isolated films using an air dielectric

Buried air dielectric isolation of silicon islands

Interferometer for in situ measurement of thin film thickness changes

Semiconductor device structure employing a multi-level epitaxial st...

Method of manufacturing a semiconductor device structure employing...

Fabrication of dielectrically isolated integrated circuit devices

Method of trench filling

Selective epitaxial growth structure and isolation

Method of making defect free silicon islands using SEG

Method of trench filling

Selective epitaxial growth structure and isolation

Method for forming a void free isolation pattern and resulting stru...

Planar void free isolation structure

Method for forming a void free isolation structure utilizing etch a...

Method for forming a void free isolation pattern utilizing etch and...

Method of filling trenches with silicon and structures

Buried injector memory cell formed from vertical complementary bipo...

Porous film heat transfer

Method of fabricating buried injector memory cell formed from verti...

Chemical vapor deposition of dielectric films containing Al, N, and Si