Yu-Pin Han

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit manufacture method with aqueous hydrogen fluorid...
- Patent number 6,429,144
- Issue date Aug 6, 2002
- Koninklijke Philips Electronics N.V.
- Landon B. Vines
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated-circuit manufacture method with aqueous hydrogen-fluorid...
- Patent number 6,007,641
- Issue date Dec 28, 1999
- VLSI Technology, Inc.
- Landon B. Vines
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for semiconductor devices
- Patent number 5,847,465
- Issue date Dec 8, 1998
- STMicroelectronics, Inc.
- Fu-Tai Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverted field-effect device with polycrystalline silicon/germanium...
- Patent number 5,821,136
- Issue date Oct 13, 1998
- STMicroelectronics, Inc.
- Tsiu Chiu Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antifuse structures
- Patent number 5,821,558
- Issue date Oct 13, 1998
- VLSI Technology, Inc.
- Yu-Pin Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inverted field-effect device with polycrystalline silicon/germanium...
- Patent number 5,801,396
- Issue date Sep 1, 1998
- STMicroelectronics, Inc.
- Tsiu Chiu Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitance measurement using an RLC circuit model
- Patent number 5,793,640
- Issue date Aug 11, 1998
- VLSI Technology, Inc.
- Koucheng Wu
- G01 - MEASURING TESTING
Information Patent Grant
Methods for fabricating anti-fuse structures
- Patent number 5,793,094
- Issue date Aug 11, 1998
- VLSI Technology, Inc.
- Ivan Sanchez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for fabricationg anti-fuse devices
- Patent number 5,789,795
- Issue date Aug 4, 1998
- VLSI Technology, Inc.
- Ivan Sanchez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making antifuse structures using implantation of both neu...
- Patent number 5,783,467
- Issue date Jul 21, 1998
- VLSI Technology, Inc.
- Yu-Pin Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure and method for determining metal-oxide-silicon field...
- Patent number 5,773,317
- Issue date Jun 30, 1998
- VLSI Technology Inc.
- Koucheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect device with polycrystalline silicon channel
- Patent number 5,770,892
- Issue date Jun 23, 1998
- SGS-Thomson Microelectronics, Inc.
- Tsiu C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for programming antifuse structures
- Patent number 5,753,540
- Issue date May 19, 1998
- VLSI Technology, Inc.
- Koucheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-performance punchthrough implant method for MOS/VLSI
- Patent number 5,444,008
- Issue date Aug 22, 1995
- VLSI Technology, Inc.
- Yu P. Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Angled lateral pocket implants on p-type semiconductor devices
- Patent number 5,409,848
- Issue date Apr 25, 1995
- VLSI Technology, Inc.
- Yu-Pin Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with gate-penetrating halo implant
- Patent number 5,395,773
- Issue date Mar 7, 1995
- VLSI Technology, Inc.
- K. S. Ravindhran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a contact/VIA
- Patent number 5,371,041
- Issue date Dec 6, 1994
- SGS-Thomson Microelectronics, Inc.
- Fu-Tai Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Latid implants for increasing the effective width of transistor ele...
- Patent number 5,344,787
- Issue date Sep 6, 1994
- VLSI Technology, Inc.
- Samuel J. S. Nagalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pad oxide protect sealed interface isolation
- Patent number 5,256,895
- Issue date Oct 26, 1993
- SGS-Thomson Microelectronics, Inc.
- Frank R. Bryant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect device with polycrystalline silicon channel
- Patent number 5,135,888
- Issue date Aug 4, 1992
- SGS-Thomson Microelectronics, Inc.
- Tsiu C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pad oxide protect sealed interface isolation process
- Patent number 4,981,813
- Issue date Jan 1, 1991
- SGS-Thomson Microelectronics, Inc.
- Frank R. Bryant
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a contact VIA
- Patent number 4,962,414
- Issue date Oct 9, 1990
- SGS-Thomson Microelectronics, Inc.
- Fu-Tai Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a self-aligned source/drain contact for an MOS t...
- Patent number 4,868,138
- Issue date Sep 19, 1989
- SGS-Thomson Microelectronics, Inc.
- Tsiu C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making mosfet by multiple implantations followed by a dif...
- Patent number RE32800
- Issue date Dec 13, 1988
- SGS-Thomson Microelectronics, Inc.
- Yu-Pin Han
- 437 -
Information Patent Grant
Process for manufacturing LDD CMOS devices
- Patent number 4,771,014
- Issue date Sep 13, 1988
- SGS-Thomson Microelectronics, Inc.
- Fu-Tai Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a trench capacitor and dram memory cell
- Patent number 4,679,300
- Issue date Jul 14, 1987
- Thomson Components-Mostek Corp.
- Tsiu C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making MOSFET by multiple implantations followed by a dif...
- Patent number 4,599,118
- Issue date Jul 8, 1986
- Mostek Corporation
- Yu-Pin Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of isolation oxidation for MOS circuit
- Patent number 4,407,696
- Issue date Oct 4, 1983
- Mostek Corporation
- Yu-Pin Han
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Integrated circuit manufacture method with aqueous hydrogen fluorid...

Integrated-circuit manufacture method with aqueous hydrogen-fluorid...

Contacts for semiconductor devices

Inverted field-effect device with polycrystalline silicon/germanium...

Antifuse structures

Inverted field-effect device with polycrystalline silicon/germanium...

Capacitance measurement using an RLC circuit model

Methods for fabricating anti-fuse structures

Methods and apparatus for fabricationg anti-fuse devices

Method of making antifuse structures using implantation of both neu...

Test structure and method for determining metal-oxide-silicon field...

Field effect device with polycrystalline silicon channel

Apparatus and method for programming antifuse structures

High-performance punchthrough implant method for MOS/VLSI

Angled lateral pocket implants on p-type semiconductor devices

MOSFET with gate-penetrating halo implant

Method for forming a contact/VIA

Latid implants for increasing the effective width of transistor ele...

Pad oxide protect sealed interface isolation

Field effect device with polycrystalline silicon channel

Pad oxide protect sealed interface isolation process

Method for forming a contact VIA

Method for forming a self-aligned source/drain contact for an MOS t...

Method of making mosfet by multiple implantations followed by a dif...

Process for manufacturing LDD CMOS devices

Method of making a trench capacitor and dram memory cell

Method of making MOSFET by multiple implantations followed by a dif...

Fabrication of isolation oxidation for MOS circuit