Zhiqiang WU

Person

Allen, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a CMOS IC having a compressively stressed metal l...
- Patent number 8,435,849
- Issue date May 7, 2013
- Texas Instruments Incorporated
- Xin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to enhance channel stress in CMOS processes
- Patent number 8,124,486
- Issue date Feb 28, 2012
- Texas Instruments Incorporated
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Disposable spacer integration with stress memorization technique an...
- Patent number 8,114,727
- Issue date Feb 14, 2012
- Texas Instruments Incorporated
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to enhance channel stress in CMOS processes
- Patent number 8,048,750
- Issue date Nov 1, 2011
- Texas Instruments Incorporated
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing a semiconductor substrate utilizing plural impl...
- Patent number 7,662,690
- Issue date Feb 16, 2010
- Texas Instruments Incorporated
- Shaoping Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS transistor using high stress liner layer
- Patent number 7,429,517
- Issue date Sep 30, 2008
- Texas Instruments Incorporated
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Design method and system for optimum performance in integrated circ...
- Patent number 7,216,310
- Issue date May 8, 2007
- Texas Instruments Incorporated
- Amitava Chatterjee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method and apparatus for reducing substrate bias voltage drop
- Patent number 7,189,602
- Issue date Mar 13, 2007
- Micron Technology, Inc.
- Tongbi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to improve SRAM performance and stability
- Patent number 7,189,627
- Issue date Mar 13, 2007
- Texas Instruments Incorporated
- Zhiqiang Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing the migration of grain boundaries
- Patent number 7,129,582
- Issue date Oct 31, 2006
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing transistor having germanium implant region...
- Patent number 7,118,979
- Issue date Oct 10, 2006
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a localized halo implant therein and me...
- Patent number 7,038,258
- Issue date May 2, 2006
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing the migration of grain boundaries
- Patent number 6,955,980
- Issue date Oct 18, 2005
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an angled compensation implant and meth...
- Patent number 6,940,137
- Issue date Sep 6, 2005
- Texas Instruments Incorporated
- Jihong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for improving well to well isolation
- Patent number 6,933,203
- Issue date Aug 23, 2005
- Texas Instruments Incorporated
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process method of source drain spacer engineering to improve transi...
- Patent number 6,913,980
- Issue date Jul 5, 2005
- Texas Instruments Incorporated
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor structure
- Patent number 6,885,542
- Issue date Apr 26, 2005
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Eliminating substrate noise by an electrically isolated high-voltag...
- Patent number 6,875,650
- Issue date Apr 5, 2005
- Texas Instruments Incorporated
- Craig T. Salling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to reduce gate edge drain leakage in semiconductor devices
- Patent number 6,855,984
- Issue date Feb 15, 2005
- Texas Instruments Incorporated
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor circuit with varying resistance lightly doped diffused r...
- Patent number 6,831,337
- Issue date Dec 14, 2004
- Texas Instruments Incorporated
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resolution pressure-sensing device having an insulating flexib...
- Patent number 6,820,502
- Issue date Nov 23, 2004
- Micron Technology, Inc.
- Tongbi Jiang
- G01 - MEASURING TESTING
Information Patent Grant
Method of manufacturing a semiconductor device having a localized h...
- Patent number 6,794,235
- Issue date Sep 21, 2004
- Texas Instruments Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for reducing substrate bias voltage drop
- Patent number 6,788,552
- Issue date Sep 7, 2004
- Micron Technology, Inc.
- Tongbi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor structure
- Patent number 6,787,839
- Issue date Sep 7, 2004
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of MOS transistor having increased substrate r...
- Patent number 6,764,909
- Issue date Jul 20, 2004
- Texas Instruments Incorporated
- Craig T. Salling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor structure
- Patent number 6,740,923
- Issue date May 25, 2004
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary transistors with controlled drain extension overlap
- Patent number 6,730,556
- Issue date May 4, 2004
- Texas Instruments Incorporated
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor circuit with varying resistance lightly doped diffused r...
- Patent number 6,730,582
- Issue date May 4, 2004
- Texas Instruments Incorporated
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for addressing junction capacitances in semicondu...
- Patent number 6,727,131
- Issue date Apr 27, 2004
- Texas Instruments Incorporated
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD improvement by a vertical bipolar transistor with low breakdown...
- Patent number 6,724,050
- Issue date Apr 20, 2004
- Texas Instruments Incorporated
- Craig T. Salling
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NMOS TRANSISTOR WITH ENHANCED STRESS GATE
- Publication number 20120190158
- Publication date Jul 26, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Xin WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD TO ENHANCE CHANNEL STRESS IN CMOS PROCESSES
- Publication number 20110312144
- Publication date Dec 22, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Method to Improve Performance by Enhancing Poly Gate Doping C...
- Publication number 20110306170
- Publication date Dec 15, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Xin WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Method to Enhance Channel Stress in CMOS Processes
- Publication number 20110300677
- Publication date Dec 8, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NMOS TRANSISTOR WITH ENHANCED STRESS GATE
- Publication number 20110175168
- Publication date Jul 21, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Xin WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Disposable Spacer Integration with Stress Memorization Technique an...
- Publication number 20110070703
- Publication date Mar 24, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Weize Xiong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITOR HAVING A GERMANIUM IMPLANT REGION LOCATED THEREIN AND A M...
- Publication number 20100022062
- Publication date Jan 28, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Method to Enhance Channel Stress in CMOS Processes
- Publication number 20090227084
- Publication date Sep 10, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nwell to nwell isolation
- Publication number 20070176263
- Publication date Aug 2, 2007
- Texas Instruments Incorporation
- Shaoping Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING A GERMANIUM IMPLANT REGION LOCATED THEREIN AND A...
- Publication number 20070004158
- Publication date Jan 4, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel method to improve SRAM performance and stability
- Publication number 20060040462
- Publication date Feb 23, 2006
- Zhiqiang Wu
- G11 - INFORMATION STORAGE
Information Patent Application
Reducing the migration of grain boundaries
- Publication number 20050263897
- Publication date Dec 1, 2005
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS transistor using high stress liner layer
- Publication number 20050255659
- Publication date Nov 17, 2005
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel process method of source drain spacer engineering to improve...
- Publication number 20050212041
- Publication date Sep 29, 2005
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Design method and system for optimum performance in integrated circ...
- Publication number 20050149887
- Publication date Jul 7, 2005
- TEXAS INSTRUMENTS INCORPORATED
- Amitava Chatterjee
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Transistor having a germanium implant region located therein and a...
- Publication number 20050093032
- Publication date May 5, 2005
- Texas Instruments, Incorporated
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having an angled compensation implant and meth...
- Publication number 20050062103
- Publication date Mar 24, 2005
- Texas Instruments, Incorporated
- Jihong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR STRUCTURE
- Publication number 20050030697
- Publication date Feb 10, 2005
- Micron Technology, Inc.
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a localized halo implant therein and me...
- Publication number 20050012149
- Publication date Jan 20, 2005
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel process method of source drain spacer engineering to improve...
- Publication number 20040266121
- Publication date Dec 30, 2004
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process to improve Nwell-Nwell isolation with a blanket low dose hi...
- Publication number 20040169236
- Publication date Sep 2, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Seetharaman Sridhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for improving well to well isolation
- Publication number 20040097051
- Publication date May 20, 2004
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Eliminating substrate noise by an electrically isolated high-voltag...
- Publication number 20040082133
- Publication date Apr 29, 2004
- Craig T. Salling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing the migration of grain boundaries
- Publication number 20040043543
- Publication date Mar 4, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Kaiping Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor circuit with varying resistance lightly doped diffused r...
- Publication number 20040014293
- Publication date Jan 22, 2004
- Zhiqiang Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method of MOS transistor having increased substrate r...
- Publication number 20030207543
- Publication date Nov 6, 2003
- Craig T. Salling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method
- Publication number 20030143813
- Publication date Jul 31, 2003
- TEXAS INSTRUMENTS INCORPORATED
- Rajesh B. Khamankar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD improvement by a vertical bipolar transistor with low breakdown...
- Publication number 20030137029
- Publication date Jul 24, 2003
- Craig T. Salling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Eliminating substrate noise by an electrically isolated high-voltag...
- Publication number 20030134479
- Publication date Jul 17, 2003
- Craig T. Salling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Versatile system for forming uniform wafer surfaces
- Publication number 20030124807
- Publication date Jul 3, 2003
- Zhiqiang Jeff Wu
- H01 - BASIC ELECTRIC ELEMENTS

Zhiqiang WU

Person

Patents Grantslast 30 patents

Method of forming a CMOS IC having a compressively stressed metal l...

Method to enhance channel stress in CMOS processes

Disposable spacer integration with stress memorization technique an...

Method to enhance channel stress in CMOS processes

Method of preparing a semiconductor substrate utilizing plural impl...

CMOS transistor using high stress liner layer

Design method and system for optimum performance in integrated circ...

Method and apparatus for reducing substrate bias voltage drop

Method to improve SRAM performance and stability

Reducing the migration of grain boundaries

Method of manufacturing transistor having germanium implant region...

Semiconductor device having a localized halo implant therein and me...

Reducing the migration of grain boundaries

Semiconductor device having an angled compensation implant and meth...

Methods for improving well to well isolation

Process method of source drain spacer engineering to improve transi...

Capacitor structure

Eliminating substrate noise by an electrically isolated high-voltag...

Process to reduce gate edge drain leakage in semiconductor devices

Transistor circuit with varying resistance lightly doped diffused r...

High resolution pressure-sensing device having an insulating flexib...

Method of manufacturing a semiconductor device having a localized h...

Method and apparatus for reducing substrate bias voltage drop

Capacitor structure

Structure and method of MOS transistor having increased substrate r...

Capacitor structure

Complementary transistors with controlled drain extension overlap

Transistor circuit with varying resistance lightly doped diffused r...

System and method for addressing junction capacitances in semicondu...

ESD improvement by a vertical bipolar transistor with low breakdown...

Patents Applicationslast 30 patents

NMOS TRANSISTOR WITH ENHANCED STRESS GATE

NOVEL METHOD TO ENHANCE CHANNEL STRESS IN CMOS PROCESSES

Novel Method to Improve Performance by Enhancing Poly Gate Doping C...

Novel Method to Enhance Channel Stress in CMOS Processes

NMOS TRANSISTOR WITH ENHANCED STRESS GATE

Disposable Spacer Integration with Stress Memorization Technique an...

TRANSITOR HAVING A GERMANIUM IMPLANT REGION LOCATED THEREIN AND A M...

Novel Method to Enhance Channel Stress in CMOS Processes

Nwell to nwell isolation

TRANSISTOR HAVING A GERMANIUM IMPLANT REGION LOCATED THEREIN AND A...

Novel method to improve SRAM performance and stability

Reducing the migration of grain boundaries

CMOS transistor using high stress liner layer

Novel process method of source drain spacer engineering to improve...

Design method and system for optimum performance in integrated circ...

Transistor having a germanium implant region located therein and a...

Semiconductor device having an angled compensation implant and meth...

CAPACITOR STRUCTURE

Semiconductor device having a localized halo implant therein and me...

Novel process method of source drain spacer engineering to improve...

Process to improve Nwell-Nwell isolation with a blanket low dose hi...

Methods for improving well to well isolation

Eliminating substrate noise by an electrically isolated high-voltag...

Reducing the migration of grain boundaries

Transistor circuit with varying resistance lightly doped diffused r...

Structure and method of MOS transistor having increased substrate r...

Semiconductor device and method

ESD improvement by a vertical bipolar transistor with low breakdown...

Eliminating substrate noise by an electrically isolated high-voltag...

Versatile system for forming uniform wafer surfaces