Asymmetrical thyristors

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H01L29/7432

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7432Asymmetrical thyristors

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Patents Grantslast 30 patents

Information Patent Grant
Electrostatic discharge protection devices and methods for fabricat...
- Patent number 11,631,759
- Issue date Apr 18, 2023
- GLOBALFOUNDRIES U.S. INC.
- Meng Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon controlled rectifier with a gate electrode for electrostati...
- Patent number 11,398,565
- Issue date Jul 26, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Prantik Mahajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting element array having a plurality of light emitting t...
- Patent number 10,698,334
- Issue date Jun 30, 2020
- Canon Kabushiki Kaisha
- Koichiro Nakanishi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Thyristor with improved plasma spreading
- Patent number 10,170,557
- Issue date Jan 1, 2019
- ABB Schweiz AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection structure capable of preventing...
- Patent number 9,443,841
- Issue date Sep 13, 2016
- United Microelectronics Corp.
- Lu-An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures and techniques for using semiconductor body to construct...
- Patent number 9,324,849
- Issue date Apr 26, 2016
- Shine C. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection structure capable of preventing...
- Patent number 9,263,562
- Issue date Feb 16, 2016
- United Microelectronics Corp.
- Lu-An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming laterally varying doping concentrations and a se...
- Patent number 8,587,025
- Issue date Nov 19, 2013
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with improved robustness
- Patent number 8,354,709
- Issue date Jan 15, 2013
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming a semiconductor device
- Patent number 7,381,606
- Issue date Jun 3, 2008
- Cambridge Semiconductor Limited
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming a semiconductor device
- Patent number 7,301,220
- Issue date Nov 27, 2007
- Cambridge Semiconductor Limited
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor with recovery time voltage surge resistance
- Patent number 6,727,526
- Issue date Apr 27, 2004
- Siemens Aktiengesellschaft
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical thyristor with blocking/sweep voltage independent of t...
- Patent number 6,271,545
- Issue date Aug 7, 2001
- Siemens Aktiengesellschaft
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate thyristor
- Patent number 5,936,267
- Issue date Aug 10, 1999
- Fuji Electric Co., Ltd.
- Noriyuki Iwamuro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anode-side short structure for asymmetric thyristors
- Patent number 5,644,149
- Issue date Jul 1, 1997
- Asea Brown Boveri AG
- Peter Streit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical thyristor and method for producing same
- Patent number 4,775,883
- Issue date Oct 4, 1988
- Licentia Patent-Verwaltungs-G.m.b.H.
- Edgar Borchert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a blocking capability in only one direc...
- Patent number 4,642,669
- Issue date Feb 10, 1987
- BBC Brown, Boveri & Company Limited
- Peter Roggwiller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High switching speed semiconductor device containing graded killer...
- Patent number 4,551,744
- Issue date Nov 5, 1985
- Hitachi, Ltd.
- Kensuke Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical thyristor with highly doped anode base layer region fo...
- Patent number 4,517,582
- Issue date May 14, 1985
- BBC Brown, Boveri & Company, Limited
- Roland Sittig
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET Controlled thyristor
- Patent number 4,502,070
- Issue date Feb 26, 1985
- Siemens Aktiengesellschaft
- Ludwig Leipold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer semiconductor switching devices
- Patent number 4,286,279
- Issue date Aug 25, 1981
- Jearld L. Hutson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor
- Patent number 4,275,408
- Issue date Jun 23, 1981
- Mitsubishi Denki Kabushiki Kaisha
- Yoshinori Yukimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate turn-off thyristor
- Patent number 4,243,999
- Issue date Jan 6, 1981
- Tokyo Shibaura Electric Co., Ltd.
- Makoto Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor device
- Patent number 4,236,169
- Issue date Nov 25, 1980
- Hitachi, Ltd.
- Yoichi Nakashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical circuit with a high-frequency thyristor fired by blockin...
- Patent number 4,177,479
- Issue date Dec 4, 1979
- BBC Brown Boveri & Company
- Patrick DeBruyne
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Bistable semiconductor component for high frequencies having four z...
- Patent number 4,081,821
- Issue date Mar 28, 1978
- BBC Brown Boveri & Company Limited
- Jozef Cornu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3475666
- Patent number 3,475,666
- Issue date Oct 28, 1969
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3370209
- Patent number 3,370,209
- Issue date Feb 20, 1968
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3284639
- Patent number 3,284,639
- Issue date Nov 8, 1966
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

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GATE-COMMUTED THYRISTOR CELL WITH A BASE REGION HAVING A VARYING TH...
- Publication number 20240162295
- Publication date May 16, 2024
- Hitachi Energy Ltd
- Umamaheswara VEMULAPATI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED PROTECTION DEVICE STRUCTURES FOR AN ELECTROSTATIC DISCHARGE P...
- Publication number 20240079482
- Publication date Mar 7, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Prantik Mahajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION DEVICES AND METHODS FOR FABRICAT...
- Publication number 20220246749
- Publication date Aug 4, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Meng MIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CONTROLLED RECTIFIER WITH A GATE ELECTRODE FOR ELECTROSTATI...
- Publication number 20220181474
- Publication date Jun 9, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- PRANTIK MAHAJAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR WITH IMPROVED PLASMA SPREADING
- Publication number 20180090572
- Publication date Mar 29, 2018
- ABB Schweiz AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE CAPABLE OF PREVENTING...
- Publication number 20160118374
- Publication date Apr 28, 2016
- UNITED MICROELECTRONICS CORP.
- Lu-An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE CAPABLE OF PREVENTING...
- Publication number 20150228771
- Publication date Aug 13, 2015
- UNITED MICROELECTRONICS CORP.
- Lu-An Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES AND TECHNIQUES FOR USING SEMICONDUCTOR BODY TO CONSTRUCT...
- Publication number 20140131764
- Publication date May 15, 2014
- Shine C. Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Laterally Varying Doping Concentrations
- Publication number 20140034998
- Publication date Feb 6, 2014
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Voltage-Sustaining Layer Consisting of Semiconductor and Insulator...
- Publication number 20130168729
- Publication date Jul 4, 2013
- UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY
- Xingbi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT WITH IMPROVED ROBUSTNESS
- Publication number 20080128798
- Publication date Jun 5, 2008
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE
- Publication number 20080070350
- Publication date Mar 20, 2008
- CAMBRIDGE SEMICONDUCTOR LIMITED
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of forming a semiconductor device
- Publication number 20060261443
- Publication date Nov 23, 2006
- CAMBRIDGE SEMICONDUCTOR LIMITED
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS

Asymmetrical thyristors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electrostatic discharge protection devices and methods for fabricat...

Silicon controlled rectifier with a gate electrode for electrostati...

Light emitting element array having a plurality of light emitting t...

Thyristor with improved plasma spreading

Electrostatic discharge protection structure capable of preventing...

Structures and techniques for using semiconductor body to construct...

Electrostatic discharge protection structure capable of preventing...

Method for forming laterally varying doping concentrations and a se...

Semiconductor component with improved robustness

Semiconductor device and method of forming a semiconductor device

Semiconductor device and method of forming a semiconductor device

Thyristor with recovery time voltage surge resistance

Asymmetrical thyristor with blocking/sweep voltage independent of t...

Insulated gate thyristor

Anode-side short structure for asymmetric thyristors

Asymmetrical thyristor and method for producing same

Semiconductor device having a blocking capability in only one direc...

High switching speed semiconductor device containing graded killer...

Asymmetrical thyristor with highly doped anode base layer region fo...

FET Controlled thyristor

Multilayer semiconductor switching devices

Thyristor

Gate turn-off thyristor

Thyristor device

Electrical circuit with a high-frequency thyristor fired by blockin...

Bistable semiconductor component for high frequencies having four z...

3475666

3370209

3284639

Patents Applicationslast 30 patents

GATE-COMMUTED THYRISTOR CELL WITH A BASE REGION HAVING A VARYING TH...

GATED PROTECTION DEVICE STRUCTURES FOR AN ELECTROSTATIC DISCHARGE P...

ELECTROSTATIC DISCHARGE PROTECTION DEVICES AND METHODS FOR FABRICAT...

SILICON CONTROLLED RECTIFIER WITH A GATE ELECTRODE FOR ELECTROSTATI...

THYRISTOR WITH IMPROVED PLASMA SPREADING

ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE CAPABLE OF PREVENTING...

ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE CAPABLE OF PREVENTING...

STRUCTURES AND TECHNIQUES FOR USING SEMICONDUCTOR BODY TO CONSTRUCT...

Semiconductor Device with Laterally Varying Doping Concentrations

Voltage-Sustaining Layer Consisting of Semiconductor and Insulator...

SEMICONDUCTOR COMPONENT WITH IMPROVED ROBUSTNESS

SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE

Semiconductor device and method of forming a semiconductor device