3370209

Information

• Patent Grant
• 3370209

• References
• Source

• Patent Number

  3,370,209

• Date Filed

  Not available

• Date Issued

  Tuesday, February 20, 1968
  57 years ago

• CPC

  • H01L29/66121 - Multilayer diodes
  • H01L29/0657 - characterised by the shape of the body
  • H01L29/0661 - specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction
  • H01L29/1016 - Anode base regions of thyristors
  • H01L29/102 - Cathode base regions of thyristors
  • H01L29/66363 - Thyristors
  • H01L29/7432 - Asymmetrical thyristors
  • H01L29/868 - PIN diodes

• US Classifications

  • 257 - Active solid-state devices