based on migration or redistribution of ionic species

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CPC
H01L45/08

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/08based on migration or redistribution of ionic species

Industries

Patents Grantslast 30 patents

Information Patent Grant
Cross-point memory array and related fabrication techniques
- Patent number 11,706,934
- Issue date Jul 18, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnesium ion based synaptic device
- Patent number 11,690,304
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Douglas M. Bishop
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device including a memory element between wiring layers and...
- Patent number 11,683,942
- Issue date Jun 20, 2023
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Jun Sumino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing variable resistance memory device
- Patent number 11,683,940
- Issue date Jun 20, 2023
- Samsung Electronics Co., Ltd.
- Dongkyu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal reversibly switchable memory device
- Patent number 11,672,189
- Issue date Jun 6, 2023
- Hefei Reliance Memory Limited
- Darrell Rinerson
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cell and method of forming the same
- Patent number 11,659,779
- Issue date May 23, 2023
- Agency for Science, Technology and Research
- Wen Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memristive device and method based on ion migration over one or mor...
- Patent number 11,657,871
- Issue date May 23, 2023
- AT&T Intellectual Property I, L.P.
- Sheldon Kent Meredith
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Cross-point memory array and related fabrication techniques
- Patent number 11,653,505
- Issue date May 16, 2023
- Micron Technology, Inc.
- Hernan A. Castro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory structure with positioned doping
- Patent number 11,653,580
- Issue date May 16, 2023
- Hefei Reliance Memory Limited
- Zhichao Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells and methods for forming memory cells
- Patent number 11,641,789
- Issue date May 2, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Yi Jiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High yield RRAM cell with optimized film scheme
- Patent number 11,637,239
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Trinh Hai Dang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory cell and manufacturing method thereof
- Patent number 11,637,238
- Issue date Apr 25, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom electrode structure in memory device
- Patent number 11,631,810
- Issue date Apr 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Yang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random-access memory devices and methods of fabrication
- Patent number 11,621,395
- Issue date Apr 4, 2023
- Intel Corporation
- Nathan Strutt
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling voltage resistance through metal-oxide device
- Patent number 11,615,843
- Issue date Mar 28, 2023
- International Business Machines Corporation
- Bert Jan Offrein
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Low current RRAM-based crossbar array circuit implemented with swit...
- Patent number 11,616,196
- Issue date Mar 28, 2023
- TetraMem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual oxide analog switch for neuromorphic switching
- Patent number 11,616,195
- Issue date Mar 28, 2023
- Applied Materials, Inc.
- Deepak Kamalanathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,611,039
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tsai-Hao Hung
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for forming RRAM with a barrier layer
- Patent number 11,611,038
- Issue date Mar 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Chen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lithographic memristive array
- Patent number 11,599,781
- Issue date Mar 7, 2023
- Rain Neuromorphics Inc.
- Suhas Kumar
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Diffusion barrier layer in programmable metallization cell
- Patent number 11,594,678
- Issue date Feb 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Albert Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor material for resistive random access memory
- Patent number 11,588,102
- Issue date Feb 21, 2023
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure
- Patent number 11,588,107
- Issue date Feb 21, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tai-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device, integrated circuit device and method
- Patent number 11,581,368
- Issue date Feb 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device with vertical string including semiconduc...
- Patent number 11,574,677
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Jungho Yoon
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance memory device
- Patent number 11,575,084
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Seyun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-terminal non-volatile memory cell for decoupled read and write...
- Patent number 11,568,927
- Issue date Jan 31, 2023
- International Business Machines Corporation
- John Rozen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Densely charged catenanes
- Patent number 11,566,014
- Issue date Jan 31, 2023
- Northwestern University
- Minh T. Nguyen
- C07 - ORGANIC CHEMISTRY
Information Patent Grant
Variable resistance memory device and manufacturing method of the same
- Patent number 11,563,172
- Issue date Jan 24, 2023
- SK hynix Inc.
- Jae Hyun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having variable resistance elements pro...
- Patent number 11,552,129
- Issue date Jan 10, 2023
- Kioxia Corporation
- Takuya Konno
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...
- Publication number 20240164224
- Publication date May 16, 2024
- United Microelectronics Corp.
- Kai-Jiun CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS-INDUCED FORMING OF OXIDE RRAM
- Publication number 20240155952
- Publication date May 9, 2024
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PIEZOELECTRIC MEMORY
- Publication number 20240147873
- Publication date May 2, 2024
- International Business Machines Corporation
- Guy M. Cohen
- G11 - INFORMATION STORAGE
Information Patent Application
STRUCTURE AND METHOD FOR MEMORY ELEMENT TO CONFINE METAL WITH SPACER
- Publication number 20240130255
- Publication date Apr 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Robert Viktor Seidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS
- Publication number 20240090350
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A MEMORY DEVICE AT A BACKSIDE OF A WAFER SUBSTRA...
- Publication number 20240023463
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Liang CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES
- Publication number 20240023466
- Publication date Jan 18, 2024
- TetraMem Inc.
- Minxian Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
CMOS-COMPATIBLE RRAM DEVICES
- Publication number 20230422641
- Publication date Dec 28, 2023
- TetraMem Inc.
- Minxian Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORN SHAPED SPACER FOR MEMORY DEVICES
- Publication number 20230380309
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Ting Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM WITH POST-PATTERNED TREATED MEMORY FILMS TO PROVIDE IMPROVED E...
- Publication number 20230371407
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Watson Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230337556
- Publication date Oct 19, 2023
- United Microelectronics Corp.
- Shu-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEURAL NETWORK SYSTEM, HIGH DENSITY EMBEDDED-ARTIFICIAL SYNAPTIC EL...
- Publication number 20230289577
- Publication date Sep 14, 2023
- National Tsing Hua University
- Ya-Chin KING
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
- Publication number 20230253039
- Publication date Aug 10, 2023
- Macronix International Co., Ltd.
- Yu-Yu LIN
- G11 - INFORMATION STORAGE
Information Patent Application
LATERAL MULTI-BIT MEMORY DEVICES AND METHODS OF MAKING THE SAME
- Publication number 20230255034
- Publication date Aug 10, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Desmond Jia Jun Loy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20230240161
- Publication date Jul 27, 2023
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUNDANT BOTTOM PAD AND SACRIFICIAL VIA CONTACT FOR PROCESS INDUCE...
- Publication number 20230210025
- Publication date Jun 29, 2023
- International Business Machines Corporation
- Youngseok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-TERMINAL SYNAPTIC DEVICE
- Publication number 20230172080
- Publication date Jun 1, 2023
- Hyundai Motor Company
- Su-Jung Noh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEUROMORPHIC MEMRISTOR DEVICE BASED ON VERTICALLY-ORIENTED HALIDE P...
- Publication number 20230172082
- Publication date Jun 1, 2023
- Seoul National University R&DB Foundation
- Ho Won Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RRAM FILAMENT SPATIAL LOCALIZATION USING A LASER STIMULATION
- Publication number 20230170019
- Publication date Jun 1, 2023
- International Business Machines Corporation
- Franco Stellari
- G11 - INFORMATION STORAGE
Information Patent Application
LEAD-FREE METALLIC HALIDE MEMRISTOR AND ELECTRONIC ELEMENT COMPRISI...
- Publication number 20230165172
- Publication date May 25, 2023
- National Tsing-Hua University
- Hao-Wu Lin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HIGH-DENSITY RESISTIVE RANDOM-ACCESS MEMORY ARRAY WITH SELF-ALIGNED...
- Publication number 20230147958
- Publication date May 11, 2023
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER TO MITIGATE DIRECT-SHORTAGE LEAKAGE IN CONDUCTIVE...
- Publication number 20230134560
- Publication date May 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wen Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ReRAM Device and Method for Manufacturing the Same
- Publication number 20230136097
- Publication date May 4, 2023
- SHANGHAI HUALI MICROELECTRONICS CORPORATION
- Zhi Tian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND FABRICATING METHOD OF...
- Publication number 20230136441
- Publication date May 4, 2023
- UNITED MICROELECTRONICS CORP.
- Yi-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHYSICAL UNCLONABLE FUNCTION DEVICE WITH PHASE CHANGE
- Publication number 20230108998
- Publication date Apr 6, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION
- Publication number 20230100433
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILAMENT CONFINEMENT IN RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20230089257
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CBRAM BOTTOM ELECTRODE STRUCTURES
- Publication number 20230086109
- Publication date Mar 23, 2023
- Dialog Semiconductor US Inc.
- John R. Jameson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A MEMORY RESISTOR DEVICE
- Publication number 20230092998
- Publication date Mar 23, 2023
- UCL Business LTD
- Longfei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LARGE-SCALE CROSSBAR ARRAYS WITH REDUCED SERIES RESISTANCE
- Publication number 20230088575
- Publication date Mar 23, 2023
- TetraMem Inc.
- Ning Ge
- H01 - BASIC ELECTRIC ELEMENTS

based on migration or redistribution of ionic species

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Cross-point memory array and related fabrication techniques

Magnesium ion based synaptic device

Memory device including a memory element between wiring layers and...

Method of manufacturing variable resistance memory device

Two-terminal reversibly switchable memory device

Memory cell and method of forming the same

Memristive device and method based on ion migration over one or mor...

Cross-point memory array and related fabrication techniques

Non-volatile memory structure with positioned doping

Memory cells and methods for forming memory cells

High yield RRAM cell with optimized film scheme

Resistive random-access memory cell and manufacturing method thereof

Bottom electrode structure in memory device

Resistive random-access memory devices and methods of fabrication

Controlling voltage resistance through metal-oxide device

Low current RRAM-based crossbar array circuit implemented with swit...

Dual oxide analog switch for neuromorphic switching

Resistive random access memory device

Method for forming RRAM with a barrier layer

Lithographic memristive array

Diffusion barrier layer in programmable metallization cell

Semiconductor material for resistive random access memory

Integrated circuit structure

Memory device, integrated circuit device and method

Nonvolatile memory device with vertical string including semiconduc...

Variable resistance memory device

Two-terminal non-volatile memory cell for decoupled read and write...

Densely charged catenanes

Variable resistance memory device and manufacturing method of the same

Semiconductor memory device having variable resistance elements pro...

Patents Applicationslast 30 patents

RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD FOR FABRICATING TH...

PROCESS-INDUCED FORMING OF OXIDE RRAM

PIEZOELECTRIC MEMORY

STRUCTURE AND METHOD FOR MEMORY ELEMENT TO CONFINE METAL WITH SPACER

MULTIFILAMENT RESISTIVE MEMORY WITH INSULATION LAYERS

METHOD FOR FORMING A MEMORY DEVICE AT A BACKSIDE OF A WAFER SUBSTRA...

FORMING-FREE RANDOM-ACCESS MEMORY (RRAM) DEVICES

CMOS-COMPATIBLE RRAM DEVICES

HORN SHAPED SPACER FOR MEMORY DEVICES

RRAM WITH POST-PATTERNED TREATED MEMORY FILMS TO PROVIDE IMPROVED E...

RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

NEURAL NETWORK SYSTEM, HIGH DENSITY EMBEDDED-ARTIFICIAL SYNAPTIC EL...

MEMORY DEVICE AND METHOD FOR OPERATING THE SAME

LATERAL MULTI-BIT MEMORY DEVICES AND METHODS OF MAKING THE SAME

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF

REDUNDANT BOTTOM PAD AND SACRIFICIAL VIA CONTACT FOR PROCESS INDUCE...

THREE-TERMINAL SYNAPTIC DEVICE

NEUROMORPHIC MEMRISTOR DEVICE BASED ON VERTICALLY-ORIENTED HALIDE P...

RRAM FILAMENT SPATIAL LOCALIZATION USING A LASER STIMULATION

LEAD-FREE METALLIC HALIDE MEMRISTOR AND ELECTRONIC ELEMENT COMPRISI...

HIGH-DENSITY RESISTIVE RANDOM-ACCESS MEMORY ARRAY WITH SELF-ALIGNED...

DIFFUSION BARRIER TO MITIGATE DIRECT-SHORTAGE LEAKAGE IN CONDUCTIVE...

ReRAM Device and Method for Manufacturing the Same

RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND FABRICATING METHOD OF...

PHYSICAL UNCLONABLE FUNCTION DEVICE WITH PHASE CHANGE

BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION

FILAMENT CONFINEMENT IN RESISTIVE RANDOM ACCESS MEMORY

CBRAM BOTTOM ELECTRODE STRUCTURES

METHOD FOR MANUFACTURING A MEMORY RESISTOR DEVICE

LARGE-SCALE CROSSBAR ARRAYS WITH REDUCED SERIES RESISTANCE