Capacitors with PN or Schottky junction

Industry

CPC
H01L29/66174

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/66174Capacitors with PN or Schottky junction

Industries

Patents Grantslast 30 patents

Information Patent Grant
FinFET varactor quality factor improvement
- Patent number 11,961,836
- Issue date Apr 16, 2024
- Intel Corporation
- Hyung-Jin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures including varactors
- Patent number 11,869,987
- Issue date Jan 9, 2024
- Intel Corporation
- Ayan Kar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,830,889
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Victor Chiang Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a diode
- Patent number 11,817,353
- Issue date Nov 14, 2023
- STMicroelectronics (Crolles 2) SAS
- Pascal Chevalier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varactor with meander diffusion region
- Patent number 11,721,772
- Issue date Aug 8, 2023
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varactor structure with relay conductive layers
- Patent number 11,508,855
- Issue date Nov 22, 2022
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures including varactors
- Patent number 11,417,781
- Issue date Aug 16, 2022
- Intel Corporation
- Ayan Kar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a diode
- Patent number 11,348,834
- Issue date May 31, 2022
- STMicroelectronics (Crolles 2) SAS
- Gregory Avenier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making wide tuning range and super low capacitance varact...
- Patent number 11,335,815
- Issue date May 17, 2022
- GLOBAL COMMUNICATION SEMICONDUCTORS, LLC
- Yuefei Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a diode
- Patent number 11,251,084
- Issue date Feb 15, 2022
- STMicroelectronics (Crolles 2) SAS
- Pascal Chevalier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including hyper-abrupt junction region includ...
- Patent number 11,183,565
- Issue date Nov 23, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical pin-type capacitor and image sensing device including the...
- Patent number 11,152,408
- Issue date Oct 19, 2021
- SK hynix Inc.
- Pyong Su Kwag
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 11,094,723
- Issue date Aug 17, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Victor Chiang Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced surface field layer in varactor
- Patent number 11,018,266
- Issue date May 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device
- Patent number 11,011,556
- Issue date May 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Victor Chiang Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor devices with hyper-abrupt junction...
- Patent number 10,937,868
- Issue date Mar 2, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a varactor with a hyper-abrupt junction region in...
- Patent number 10,937,888
- Issue date Mar 2, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of vertical GaN varactor with HEMT
- Patent number 10,896,981
- Issue date Jan 19, 2021
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of vertical GaN varactor with HEMT
- Patent number 10,886,266
- Issue date Jan 5, 2021
- QUALCOMM Incorporated
- Gengming Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a varactor and method for the for...
- Patent number 10,886,419
- Issue date Jan 5, 2021
- GLOBALFOUNDRIES Inc.
- Alexandru Romanescu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having a hyper-abrupt junc...
- Patent number 10,879,357
- Issue date Dec 29, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a varactor with hyper-abrupt junction region incl...
- Patent number 10,868,120
- Issue date Dec 15, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-series varactor EPI
- Patent number 10,833,071
- Issue date Nov 10, 2020
- Qorvo US, Inc.
- Peter V. Wright
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including hyper-abrupt junction region includ...
- Patent number 10,825,901
- Issue date Nov 3, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varactor with hyper-abrupt junction region including spaced-apart s...
- Patent number 10,825,902
- Issue date Nov 3, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus of forming high voltage varactor and vertical...
- Patent number 10,714,470
- Issue date Jul 14, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-semiconductor-metal two-dimensional electron gas varactor and...
- Patent number 10,700,667
- Issue date Jun 30, 2020
- Gwangju Institute of Science and Technology
- Jae Hyung Jang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
MOS-varactor design to improve tuning efficiency
- Patent number 10,644,124
- Issue date May 5, 2020
- Semiconductor Manufacturing International (Beijing) Corporation
- Yong Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a FinFET varactor
- Patent number 10,644,169
- Issue date May 5, 2020
- Semiconductor Manufacturing International (Shanghai) Corporation
- Fei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection device and method for fabricating the protection device
- Patent number 10,622,348
- Issue date Apr 14, 2020
- United Microelectronics Corp.
- Sheng-Huei Dai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS
- Publication number 20240105860
- Publication date Mar 28, 2024
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20240097002
- Publication date Mar 21, 2024
- NANYA TECHNOLOGY CORPORATION
- Ya-Chin LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES FOR A VERTICAL VARACTOR DIODE AND RELATED METHODS
- Publication number 20240072180
- Publication date Feb 29, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Saloni Chaurasia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus Including a Capacitor and a Coil, and a System Having Suc...
- Publication number 20240038696
- Publication date Feb 1, 2024
- INFINEON TECHNOLOGIES AG
- Hermann Gruber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240030358
- Publication date Jan 25, 2024
- Powerchip Semiconductor Manufacturing Corporation
- Shih-Ping Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20230282726
- Publication date Sep 7, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Ming HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230132511
- Publication date May 4, 2023
- Rohm Co., Ltd.
- Yuta OKAWAUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES INCLUDING VARACTORS
- Publication number 20220344519
- Publication date Oct 27, 2022
- Intel Corporation
- Ayan KAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF VARACTOR STRUCTURE
- Publication number 20220328700
- Publication date Oct 13, 2022
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A DIODE
- Publication number 20220254686
- Publication date Aug 11, 2022
- STMicroelectronics (Crolles 2) SAS
- Gregory AVENIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A DIODE
- Publication number 20220130728
- Publication date Apr 28, 2022
- STMicroelectronics (Crolles 2) SAS
- Pascal CHEVALIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210351210
- Publication date Nov 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Victor Chiang LIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVE TUNABLE INTEGRATED CIRCUIT WITH ELECTRO-STATIC DISCHARGE PR...
- Publication number 20210320102
- Publication date Oct 14, 2021
- Semiconductor Components Industries, LLC
- Gareth Pryce WEALE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES INCLUDING VARACTORS
- Publication number 20210305436
- Publication date Sep 30, 2021
- Intel Corporation
- Ayan KAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SURFACE FIELD LAYER IN VARACTOR
- Publication number 20210273119
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARACTOR STRUCTURE AND METHOD FOR FABRICATING SAME
- Publication number 20210175371
- Publication date Jun 10, 2021
- United Microelectronics Corp.
- Purakh Raj Verma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING HYPER-ABRUPT JUNCTION REGION INCLUD...
- Publication number 20210020749
- Publication date Jan 21, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A HYPER-ABRUPT JUNC...
- Publication number 20210020748
- Publication date Jan 21, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A VARACTOR WITH A HYPER-ABRUPT JUNCTION REGION IN...
- Publication number 20210020759
- Publication date Jan 21, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH HYPER-ABRUPT JUNCTION...
- Publication number 20210020750
- Publication date Jan 21, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF VERTICAL GAN VARACTOR WITH HEMT
- Publication number 20210020790
- Publication date Jan 21, 2021
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A DIODE
- Publication number 20200411381
- Publication date Dec 31, 2020
- STMicroelectronics (Crolles 2) SAS
- Gregory AVENIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A DIODE
- Publication number 20200411382
- Publication date Dec 31, 2020
- STMicroelectronics (Crolles 2) SAS
- Pascal CHEVALIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A SEMICONDUCTOR DEVICE
- Publication number 20200152676
- Publication date May 14, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Victor Chiang LIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20200144315
- Publication date May 7, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Victor Chiang LIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SURFACE FIELD LAYER IN VARACTOR
- Publication number 20200127146
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET VARACTOR QUALITY FACTOR IMPROVEMENT
- Publication number 20200105747
- Publication date Apr 2, 2020
- Intel Corporation
- Hyung-Jin LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WELL DOPING FOR METAL OXIDE SEMICONDUCTOR (MOS) VARACTOR
- Publication number 20190393359
- Publication date Dec 26, 2019
- QUALCOMM Incorporated
- Chuan-Hsing CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE CAPACITOR
- Publication number 20190386154
- Publication date Dec 19, 2019
- QUALCOMM Incorporated
- Gengming TAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS OF FORMING HIGH VOLTAGE VARACTOR AND VERTICAL...
- Publication number 20190148360
- Publication date May 16, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Capacitors with PN or Schottky junction

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

FinFET varactor quality factor improvement

Gate-all-around integrated circuit structures including varactors

Semiconductor device and method of forming the same

Method for producing a diode

Varactor with meander diffusion region

Varactor structure with relay conductive layers

Gate-all-around integrated circuit structures including varactors

Method for producing a diode

Method of making wide tuning range and super low capacitance varact...

Method for producing a diode

Semiconductor devices including hyper-abrupt junction region includ...

Vertical pin-type capacitor and image sensing device including the...

Semiconductor device and method of forming the same

Reduced surface field layer in varactor

Method of making a semiconductor device

Method for making semiconductor devices with hyper-abrupt junction...

Method for making a varactor with a hyper-abrupt junction region in...

Integration of vertical GaN varactor with HEMT

Integration of vertical GaN varactor with HEMT

Semiconductor structure including a varactor and method for the for...

Method for making a semiconductor device having a hyper-abrupt junc...

Method for making a varactor with hyper-abrupt junction region incl...

Dual-series varactor EPI

Semiconductor devices including hyper-abrupt junction region includ...

Varactor with hyper-abrupt junction region including spaced-apart s...

Method and apparatus of forming high voltage varactor and vertical...

Metal-semiconductor-metal two-dimensional electron gas varactor and...

MOS-varactor design to improve tuning efficiency

Method of manufacturing a FinFET varactor

Protection device and method for fabricating the protection device

Patents Applicationslast 30 patents

LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS

METHOD OF FORMING SEMICONDUCTOR STRUCTURE

STRUCTURES FOR A VERTICAL VARACTOR DIODE AND RELATED METHODS

Apparatus Including a Capacitor and a Coil, and a System Having Suc...

CAPACITOR STRUCTURE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

SEMICONDUCTOR DEVICE

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES INCLUDING VARACTORS

FABRICATION METHOD OF VARACTOR STRUCTURE

METHOD FOR PRODUCING A DIODE

METHOD FOR PRODUCING A DIODE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

PASSIVE TUNABLE INTEGRATED CIRCUIT WITH ELECTRO-STATIC DISCHARGE PR...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES INCLUDING VARACTORS

REDUCED SURFACE FIELD LAYER IN VARACTOR

VARACTOR STRUCTURE AND METHOD FOR FABRICATING SAME

SEMICONDUCTOR DEVICES INCLUDING HYPER-ABRUPT JUNCTION REGION INCLUD...

METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A HYPER-ABRUPT JUNC...

METHOD FOR MAKING A VARACTOR WITH A HYPER-ABRUPT JUNCTION REGION IN...

METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH HYPER-ABRUPT JUNCTION...

INTEGRATION OF VERTICAL GAN VARACTOR WITH HEMT

METHOD FOR PRODUCING A DIODE

METHOD FOR PRODUCING A DIODE

METHOD OF MAKING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

REDUCED SURFACE FIELD LAYER IN VARACTOR

FINFET VARACTOR QUALITY FACTOR IMPROVEMENT

WELL DOPING FOR METAL OXIDE SEMICONDUCTOR (MOS) VARACTOR

VARIABLE CAPACITOR

METHOD AND APPARATUS OF FORMING HIGH VOLTAGE VARACTOR AND VERTICAL...