characterised by particular constructional design considerations

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H01L29/0603

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0603characterised by particular constructional design considerations

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method for making nanostructure transistors with source/drain trenc...
- Patent number 12,230,694
- Issue date Feb 18, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench intersections
- Patent number 12,218,188
- Issue date Feb 4, 2025
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 12,166,119
- Issue date Dec 10, 2024
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for enhancing insertion loss performance of an...
- Patent number 12,142,585
- Issue date Nov 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-De Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making nanostructure transistors with offset source/drai...
- Patent number 12,142,662
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a vertical fin field effect transistor with reduced...
- Patent number 12,136,573
- Issue date Nov 5, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical devices making use of counterdoped junctions
- Patent number 11,888,079
- Issue date Jan 30, 2024
- Quantum Semiconductor LLC
- Carlos Jorge R. P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with stress material for improve...
- Patent number 11,876,123
- Issue date Jan 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for enhancing insertion loss performance of an...
- Patent number 11,855,012
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-De Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF substrate structure and method of production
- Patent number 11,848,191
- Issue date Dec 19, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Emmanuel Augendre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a vertical fin field effect transistor with reduced...
- Patent number 11,784,095
- Issue date Oct 10, 2023
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 11,769,824
- Issue date Sep 26, 2023
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the hetero-integration of a semiconductor material of i...
- Patent number 11,756,787
- Issue date Sep 12, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Mickaël Martin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a diode structure in a SiC semicondu...
- Patent number 11,742,391
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,728,386
- Issue date Aug 15, 2023
- Kabushiki Kaisha Toshiba
- Hiroshi Kono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device containing an oxygen concentration distribution
- Patent number 11,710,766
- Issue date Jul 25, 2023
- Fuji Electric Co., Ltd.
- Tomoyuki Obata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing epitaxy substrate
- Patent number 11,688,628
- Issue date Jun 27, 2023
- GlobalWafers Co., Ltd.
- Ying-Ru Shih
- B32 - LAYERED PRODUCTS
Information Patent Grant
Method for manufacturing a microelectronic device
- Patent number 11,631,609
- Issue date Apr 18, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage blocking III-V semiconductor device
- Patent number 11,588,024
- Issue date Feb 21, 2023
- Infineon Technologies Austria AG
- Shu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a vertical fin field effect transistor with reduced...
- Patent number 11,574,844
- Issue date Feb 7, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor diode including field stop region
- Patent number 11,569,392
- Issue date Jan 31, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dishing prevention dummy structures for semiconductor devices
- Patent number 11,569,363
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layered substrates of semiconductor devices
- Patent number 11,502,106
- Issue date Nov 15, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Benjamin Vito Fasano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with an epitaxial layer
- Patent number 11,450,747
- Issue date Sep 20, 2022
- United Microelectronics Corp.
- Hsiao-Pang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming stress memorization layer on backside of semicond...
- Patent number 11,444,153
- Issue date Sep 13, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical devices making use of counterdoped junctions
- Patent number 11,424,382
- Issue date Aug 23, 2022
- Quantum Semiconductor LLC
- Carlos Jorge R. P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for enhancing insertion loss-performance of an...
- Patent number 11,335,654
- Issue date May 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-De Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device
- Patent number 11,282,832
- Issue date Mar 22, 2022
- Samsung Display Co., Ltd.
- Kyong-Hun Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with ultra low drain leakage
- Patent number 11,201,212
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy substrate and method of manufacturing the same
- Patent number 11,201,080
- Issue date Dec 14, 2021
- GlobalWafers Co., Ltd.
- Ying-Ru Shih
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20250063755
- Publication date Feb 20, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
- Publication number 20250063786
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20250063772
- Publication date Feb 20, 2025
- Industrial Technology Research Institute
- Po-Chun Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...
- Publication number 20250056824
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...
- Publication number 20250056825
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR, STORAGE UNIT AND MANUFACTURING METHOD THEREFOR
- Publication number 20250031411
- Publication date Jan 23, 2025
- BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY
- Huihui LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR CO...
- Publication number 20250031409
- Publication date Jan 23, 2025
- ROBERT BOSCH GmbH
- Alberto Martinez-Limia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE WITH A SILICON CARBIDE SUBSTRATE
- Publication number 20250022918
- Publication date Jan 16, 2025
- INFINEON TECHNOLOGIES AG
- Christian HECHT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015151
- Publication date Jan 9, 2025
- ROHM CO., LTD.
- Masaki NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Producing a Power Semicond...
- Publication number 20250015126
- Publication date Jan 9, 2025
- Infineon Technologies Austria AG
- Tobias Nardmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015177
- Publication date Jan 9, 2025
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421232
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Suk YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
- Publication number 20240421216
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Sunggyu Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240405123
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Ming KU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240405014
- Publication date Dec 5, 2024
- Samsung Electronics Co., Ltd.
- JONGKYU SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMANCE OF AN...
- Publication number 20240395740
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jun-De Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR A...
- Publication number 20240371936
- Publication date Nov 7, 2024
- ASAHI KASEI MICRODEVICES CORPORATION
- Shuntaro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240347584
- Publication date Oct 17, 2024
- WILL SEMICONDUCTOR (SHANGHAI) CO. LTD.
- Tetsuya OKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240347583
- Publication date Oct 17, 2024
- UNITED MICROELECTRONICS CORP.
- Kun-Sheng Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYERED SUBSTRATE
- Publication number 20240339492
- Publication date Oct 10, 2024
- Sumitomo Chemical Company, Limited
- Yoshinobu Narita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...
- Publication number 20240322005
- Publication date Sep 26, 2024
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240321948
- Publication date Sep 26, 2024
- SK HYNIX INC.
- Nam Jae LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING TRENCH TRANSISTOR CELL UNITS
- Publication number 20240304709
- Publication date Sep 12, 2024
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR
- Publication number 20240304720
- Publication date Sep 12, 2024
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Huajun JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING IMPROVED ON-STATE PERFORMANCE AND MANUFACTURING...
- Publication number 20240304710
- Publication date Sep 12, 2024
- STMicroelectronics International N.V.
- Cristina TRINGALI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240304714
- Publication date Sep 12, 2024
- GANEXT (ZHUHAI) TECHNOLOGY CO., LTD
- Yifeng WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH AUTO ALIGNED CSL AND EDGE TERMINATION STRUCT...
- Publication number 20240297249
- Publication date Sep 5, 2024
- STMicroelectronics International N.V.
- Alfio GUARNERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240290825
- Publication date Aug 29, 2024
- Sumitomo Electric Industries, Ltd.
- Akira MUKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH EXTENDED SOURCE/DRAIN
- Publication number 20240282839
- Publication date Aug 22, 2024
- POSTECH Research and Business Development Foundation
- Rock-Hyun Baek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING OXIDE SEMICONDUCTOR AND METHOD FOR F...
- Publication number 20240274722
- Publication date Aug 15, 2024
- SK HYNIX INC.
- Jun Hwe CHA
- H01 - BASIC ELECTRIC ELEMENTS

characterised by particular constructional design considerations

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for making nanostructure transistors with source/drain trenc...

Deep trench intersections

Gallium nitride transistor with a doped region

Devices and methods for enhancing insertion loss performance of an...

Method for making nanostructure transistors with offset source/drai...

Fabrication of a vertical fin field effect transistor with reduced...

Electrical devices making use of counterdoped junctions

Heterojunction bipolar transistors with stress material for improve...

Devices and methods for enhancing insertion loss performance of an...

RF substrate structure and method of production

Fabrication of a vertical fin field effect transistor with reduced...

Gallium nitride transistor with a doped region

Process for the hetero-integration of a semiconductor material of i...

Semiconductor component having a diode structure in a SiC semicondu...

Semiconductor device

Semiconductor device containing an oxygen concentration distribution

Method of manufacturing epitaxy substrate

Method for manufacturing a microelectronic device

High voltage blocking III-V semiconductor device

Fabrication of a vertical fin field effect transistor with reduced...

Power semiconductor diode including field stop region

Dishing prevention dummy structures for semiconductor devices

Multi-layered substrates of semiconductor devices

Semiconductor structure with an epitaxial layer

Method of forming stress memorization layer on backside of semicond...

Electrical devices making use of counterdoped junctions

Devices and methods for enhancing insertion loss-performance of an...

Display device

MOSFET with ultra low drain leakage

Epitaxy substrate and method of manufacturing the same

Patents Applicationslast 30 patents

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...

VERTICAL TRANSISTOR, STORAGE UNIT AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR CO...

SEMICONDUCTOR DIE WITH A SILICON CARBIDE SUBSTRATE

SEMICONDUCTOR DEVICE

Power Semiconductor Device and Method of Producing a Power Semicond...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE

HIGH VOLTAGE DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE

DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMANCE OF AN...

SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR A...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MULTILAYERED SUBSTRATE

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING TRENCH TRANSISTOR CELL UNITS

SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR

HEMT DEVICE HAVING IMPROVED ON-STATE PERFORMANCE AND MANUFACTURING...

SEMICONDUCTOR POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME

ELECTRONIC DEVICE WITH AUTO ALIGNED CSL AND EDGE TERMINATION STRUCT...

SEMICONDUCTOR DEVICE

GATE-ALL-AROUND FIELD-EFFECT TRANSISTOR WITH EXTENDED SOURCE/DRAIN

SEMICONDUCTOR DEVICE INCLUDING OXIDE SEMICONDUCTOR AND METHOD FOR F...