characterised by particular constructional design considerations

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H01L29/0603

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0603characterised by particular constructional design considerations

Industries

Patents Grantslast 30 patents

Information Patent Grant
Electrical devices making use of counterdoped junctions
- Patent number 11,888,079
- Issue date Jan 30, 2024
- Quantum Semiconductor LLC
- Carlos Jorge R. P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with stress material for improve...
- Patent number 11,876,123
- Issue date Jan 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for enhancing insertion loss performance of an...
- Patent number 11,855,012
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-De Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF substrate structure and method of production
- Patent number 11,848,191
- Issue date Dec 19, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Emmanuel Augendre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a vertical fin field effect transistor with reduced...
- Patent number 11,784,095
- Issue date Oct 10, 2023
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 11,769,824
- Issue date Sep 26, 2023
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the hetero-integration of a semiconductor material of i...
- Patent number 11,756,787
- Issue date Sep 12, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Mickaël Martin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a diode structure in a SiC semicondu...
- Patent number 11,742,391
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Thomas Basler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,728,386
- Issue date Aug 15, 2023
- Kabushiki Kaisha Toshiba
- Hiroshi Kono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device containing an oxygen concentration distribution
- Patent number 11,710,766
- Issue date Jul 25, 2023
- Fuji Electric Co., Ltd.
- Tomoyuki Obata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing epitaxy substrate
- Patent number 11,688,628
- Issue date Jun 27, 2023
- GlobalWafers Co., Ltd.
- Ying-Ru Shih
- B32 - LAYERED PRODUCTS
Information Patent Grant
Method for manufacturing a microelectronic device
- Patent number 11,631,609
- Issue date Apr 18, 2023
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Heimanu Niebojewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage blocking III-V semiconductor device
- Patent number 11,588,024
- Issue date Feb 21, 2023
- Infineon Technologies Austria AG
- Shu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a vertical fin field effect transistor with reduced...
- Patent number 11,574,844
- Issue date Feb 7, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor diode including field stop region
- Patent number 11,569,392
- Issue date Jan 31, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dishing prevention dummy structures for semiconductor devices
- Patent number 11,569,363
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Huan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layered substrates of semiconductor devices
- Patent number 11,502,106
- Issue date Nov 15, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Benjamin Vito Fasano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with an epitaxial layer
- Patent number 11,450,747
- Issue date Sep 20, 2022
- United Microelectronics Corp.
- Hsiao-Pang Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming stress memorization layer on backside of semicond...
- Patent number 11,444,153
- Issue date Sep 13, 2022
- Applied Materials, Inc.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical devices making use of counterdoped junctions
- Patent number 11,424,382
- Issue date Aug 23, 2022
- Quantum Semiconductor LLC
- Carlos Jorge R. P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices and methods for enhancing insertion loss-performance of an...
- Patent number 11,335,654
- Issue date May 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jun-De Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device
- Patent number 11,282,832
- Issue date Mar 22, 2022
- Samsung Display Co., Ltd.
- Kyong-Hun Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with ultra low drain leakage
- Patent number 11,201,212
- Issue date Dec 14, 2021
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxy substrate and method of manufacturing the same
- Patent number 11,201,080
- Issue date Dec 14, 2021
- GlobalWafers Co., Ltd.
- Ying-Ru Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cascode transistor device
- Patent number 11,183,586
- Issue date Nov 23, 2021
- Xiamen Sanan Integrated Circuit Co., Ltd.
- Jian Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench intersections
- Patent number 11,101,342
- Issue date Aug 24, 2021
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,094,786
- Issue date Aug 17, 2021
- Kabushiki Kaisha Toshiba
- Hiroshi Kono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,056,572
- Issue date Jul 6, 2021
- SUZHOU HAN HUA SEMICONDUCTOR CO., LTD.
- Xianfeng Ni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method of manufacturing the same
- Patent number 11,049,930
- Issue date Jun 29, 2021
- Shanghai Huali Microelectronics Corporation
- Fulong Qiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor structure with an epitaxial l...
- Patent number 11,011,376
- Issue date May 18, 2021
- United Microelectronics Corp.
- Hsiao-Pang Chou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
- Publication number 20240136399
- Publication date Apr 25, 2024
- Mitsubishi Electric Corporation
- Seiya SUGIMACHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240120412
- Publication date Apr 11, 2024
- Fuji Electric Co., Ltd.
- Seiji NOGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE
- Publication number 20240097037
- Publication date Mar 21, 2024
- INFINEON TECHNOLOGIES AG
- Jürgen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMNCE OF AN A...
- Publication number 20240071961
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Jun-De Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR EPITAXIAL STRUCTURE
- Publication number 20240063270
- Publication date Feb 22, 2024
- GLOBALWAFERS CO., LTD.
- JIA-ZHE LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240038877
- Publication date Feb 1, 2024
- SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD
- Yi GONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
- Publication number 20240014296
- Publication date Jan 11, 2024
- Murata Manufacturing Co., Ltd.
- Shigeki KOYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240014297
- Publication date Jan 11, 2024
- Murata Manufacturing Co., Ltd.
- Shaojun MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
- Publication number 20240006475
- Publication date Jan 4, 2024
- Mitsubishi Electric Corporation
- Seiya NAKANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR COMPONENT, AND METHOD FOR ITS PRODUCTION
- Publication number 20230402538
- Publication date Dec 14, 2023
- ROBERT BOSCH GmbH
- Alberto Martinez-Limia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20230402511
- Publication date Dec 14, 2023
- Fuji Electric Co., Ltd.
- Motoyoshi KUBOUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR N-POLAR GAN TRANSISTOR STRUCTURE AND SEMIC...
- Publication number 20230402525
- Publication date Dec 14, 2023
- Institute of Semiconductors, Guangdong Academy of Sciences
- Chengguo LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION
- Publication number 20230369482
- Publication date Nov 16, 2023
- TEXAS INSTRUMENTS INCORPORATED
- Dong Seup LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20230361167
- Publication date Nov 9, 2023
- Fuji Electric Co., Ltd.
- Tomoyuki OBATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR WITH REDUCED...
- Publication number 20230282522
- Publication date Sep 7, 2023
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A CARRIER SUBSTRATE ON A SEMICONDUCTOR WAF...
- Publication number 20230274928
- Publication date Aug 31, 2023
- ROBERT BOSCH GmbH
- Bernhard Polzinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Blocking III-V Semiconductor Device
- Publication number 20230207636
- Publication date Jun 29, 2023
- Infineon Technologies Austria AG
- Shu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...
- Publication number 20230125859
- Publication date Apr 27, 2023
- INFINEON TECHNOLOGIES AG
- Daniel Schlögl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR DEVICE WITH LIGHTLY DOPED EXTENSION REGION
- Publication number 20230075374
- Publication date Mar 9, 2023
- Ralf Rudolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL DEVICES MAKING USE OF COUNTERDOPED JUNCTIONS
- Publication number 20220367744
- Publication date Nov 17, 2022
- Quantum Semiconductor LLC
- Carlos Jorge R.P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220328617
- Publication date Oct 13, 2022
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Xianguo Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMANCE OF AN...
- Publication number 20220230974
- Publication date Jul 21, 2022
- Taiwan Semiconductor Manufacturing Co., LTD
- Jun-De Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT
- Publication number 20220223682
- Publication date Jul 14, 2022
- FLOSFIA INC.
- Osamu IMAFUJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF SUBSTRATE STRUCTURE AND METHOD OF PRODUCTION
- Publication number 20220189994
- Publication date Jun 16, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Emmanuel Augendre
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Diode Including Field Stop Region
- Publication number 20220085215
- Publication date Mar 17, 2022
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A MICROELECTRONIC DEVICE
- Publication number 20220028728
- Publication date Jan 27, 2022
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Heimanu NIEBOJEWSKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH INTERSECTIONS
- Publication number 20210351269
- Publication date Nov 11, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING EPITAXY SUBSTRATE
- Publication number 20210343583
- Publication date Nov 4, 2021
- GLOBALWAFERS CO., LTD.
- Ying-Ru Shih
- B32 - LAYERED PRODUCTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210343842
- Publication date Nov 4, 2021
- Kabushiki Kaisha Toshiba
- Hiroshi Kono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR WITH REDUCED...
- Publication number 20210272854
- Publication date Sep 2, 2021
- Tessera, Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

characterised by particular constructional design considerations

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Electrical devices making use of counterdoped junctions

Heterojunction bipolar transistors with stress material for improve...

Devices and methods for enhancing insertion loss performance of an...

RF substrate structure and method of production

Fabrication of a vertical fin field effect transistor with reduced...

Gallium nitride transistor with a doped region

Process for the hetero-integration of a semiconductor material of i...

Semiconductor component having a diode structure in a SiC semicondu...

Semiconductor device

Semiconductor device containing an oxygen concentration distribution

Method of manufacturing epitaxy substrate

Method for manufacturing a microelectronic device

High voltage blocking III-V semiconductor device

Fabrication of a vertical fin field effect transistor with reduced...

Power semiconductor diode including field stop region

Dishing prevention dummy structures for semiconductor devices

Multi-layered substrates of semiconductor devices

Semiconductor structure with an epitaxial layer

Method of forming stress memorization layer on backside of semicond...

Electrical devices making use of counterdoped junctions

Devices and methods for enhancing insertion loss-performance of an...

Display device

MOSFET with ultra low drain leakage

Epitaxy substrate and method of manufacturing the same

Cascode transistor device

Deep trench intersections

Semiconductor device

Semiconductor device and method for manufacturing the same

Semiconductor structure and method of manufacturing the same

Method of manufacturing semiconductor structure with an epitaxial l...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

SEMICONDUCTOR DEVICE

TRANSISTOR DEVICE

DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMNCE OF AN A...

HIGH ELECTRON MOBILITY TRANSISTOR EPITAXIAL STRUCTURE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

VERTICAL SEMICONDUCTOR COMPONENT, AND METHOD FOR ITS PRODUCTION

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

MANUFACTURING METHOD FOR N-POLAR GAN TRANSISTOR STRUCTURE AND SEMIC...

GALLIUM NITRIDE TRANSISTOR WITH A DOPED REGION

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR WITH REDUCED...

METHOD FOR MANUFACTURING A CARRIER SUBSTRATE ON A SEMICONDUCTOR WAF...

High Voltage Blocking III-V Semiconductor Device

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLAN...

SEMICONDUCTOR-ON-INSULATOR DEVICE WITH LIGHTLY DOPED EXTENSION REGION

ELECTRICAL DEVICES MAKING USE OF COUNTERDOPED JUNCTIONS

FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

DEVICES AND METHODS FOR ENHANCING INSERTION LOSS PERFORMANCE OF AN...

SEMICONDUCTOR ELEMENT

RF SUBSTRATE STRUCTURE AND METHOD OF PRODUCTION

Power Semiconductor Diode Including Field Stop Region

METHOD FOR MANUFACTURING A MICROELECTRONIC DEVICE

DEEP TRENCH INTERSECTIONS

METHOD OF MANUFACTURING EPITAXY SUBSTRATE

SEMICONDUCTOR DEVICE

FABRICATION OF A VERTICAL FIN FIELD EFFECT TRANSISTOR WITH REDUCED...