Devices using superconductivity Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof

Industry

  • CPC
  • H01L39/00
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Sub Industries

H01L39/005Alleged superconductivity H01L39/02Details H01L39/025for Josephson devices H01L39/04Containers Mountings H01L39/045for Josephson devices H01L39/06characterised by the current path H01L39/08characterised by the shape of the element H01L39/10characterised by the means for switching between superconductive and normal states H01L39/12characterised by the material H01L39/121Organic materials H01L39/123Fullerene superconductors H01L39/125Ceramic materials H01L39/126comprising copper oxide H01L39/128Multi-layered structures H01L39/14Permanent superconductor devices H01L39/141comprising metal borides H01L39/143comprising high Tc ceramic materials H01L39/145Three or more electrode devices H01L39/146Field effect devices H01L39/148Abrikosov vortex devices H01L39/16Devices switchable between superconductive and normal states H01L39/18Cryotrons H01L39/20Power cryotrons H01L39/22Devices comprising a junction of dissimilar materials H01L39/221Single electron tunnelling devices H01L39/223Josephson-effect devices H01L39/225comprising high Tc ceramic materials H01L39/226comprising metal borides H01L39/228three or more electrode devices H01L39/24Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof H01L39/2403Processes peculiar to the manufacture or treatment of composite superconductor filaments H01L39/2406of devices comprising Nb or an alloy of Nb with one or more of the elements of group 4 H01L39/2409of devices comprising an intermetallic compound of type A-15 H01L39/2412of devices comprising molybdenum chalcogenides H01L39/2416of devices comprising nitrides or carbonitrides H01L39/2419the superconducting material comprising copper oxide H01L39/2422Processes for depositing or forming superconductor layers H01L39/2425from a solution H01L39/2429from a suspension or slurry H01L39/2432by evaporation independent of heat source H01L39/2435by sputtering H01L39/2438by chemical vapour deposition [CVD] H01L39/2441by metalloorganic chemical vapour deposition [MOCVD] H01L39/2445by thermal spraying H01L39/2448Pulsed laser deposition H01L39/2451Precursor deposition followed by after?-treatment H01L39/2454characterised by the substrate H01L39/2458Monocrystalline substrates H01L39/2461Intermediate layers H01L39/2464After-treatment H01L39/2467Etching H01L39/247Passivation H01L39/2474Manufacture or deposition of contacts or electrodes H01L39/2477Processes including the use of precursors H01L39/248Processes peculiar to the manufacture or treatment of filaments or composite wires H01L39/2483Introducing flux pinning centres H01L39/2487of devices comprising metal borides H01L39/249Treatment of superconductive layers by irradiation H01L39/2493for Josephson devices H01L39/2496comprising high Tc ceramic materials

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