for preventing surface leakage or controlling electric field concentration

Industry

CPC
H01L29/0607

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Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0607for preventing surface leakage or controlling electric field concentration

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,961,889
- Issue date Apr 16, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-speed level-shifter for power-conversion applications
- Patent number 11,942,942
- Issue date Mar 26, 2024
- Hong Kong Applied Science and Technology Research Institute Company Limited
- Chit Sang Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,942,535
- Issue date Mar 26, 2024
- Fuji Electric Co., Ltd.
- Yosuke Sakurai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with boosted breakdown voltage
- Patent number 11,935,918
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Harry-Hak-Lay Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,929,432
- Issue date Mar 12, 2024
- Lapis Semiconductor Co., Ltd.
- Kazuya Uda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making decoupling capacitor
- Patent number 11,901,463
- Issue date Feb 13, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Szu-Lin Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,894,434
- Issue date Feb 6, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 11,894,430
- Issue date Feb 6, 2024
- Vanguard International Semiconductor Corporation
- Shao-Chang Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI lateral homogenization field high voltage power semiconductor d...
- Patent number 11,888,022
- Issue date Jan 30, 2024
- University of Electronic Science and Technology of China
- Wentong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary MOSFET structure with localized isolations in silicon...
- Patent number 11,881,481
- Issue date Jan 23, 2024
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 11,881,504
- Issue date Jan 23, 2024
- Mitsubishi Electric Corporation
- Kenji Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,876,127
- Issue date Jan 16, 2024
- Renesas Electronics Corporation
- Tomohiro Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 11,869,935
- Issue date Jan 9, 2024
- Wuhan Xinxin Semiconductor Manufacturing Co., Ltd.
- Le Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,862,670
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 11,864,378
- Issue date Jan 2, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yong Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,862,671
- Issue date Jan 2, 2024
- Sharp Fukuyama Laser Co., Ltd.
- Haruki Abe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with dual threshold voltage
- Patent number 11,855,148
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 11,855,172
- Issue date Dec 26, 2023
- SK Hynix Inc.
- Beom-Yong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor structure
- Patent number 11,848,353
- Issue date Dec 19, 2023
- NANYA TECHNOLOGY CORPORATION
- Ching-Chia Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF switch device having a highly resistive substrate, an isolation...
- Patent number 11,830,908
- Issue date Nov 28, 2023
- DB HiTek, Co., Ltd.
- Jin Hyo Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,830,909
- Issue date Nov 28, 2023
- Murata Manufacturing Co., Ltd.
- Tomoyuki Ashimine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,830,939
- Issue date Nov 28, 2023
- Renesas Electronics Corporation
- Tomohiro Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,817,476
- Issue date Nov 14, 2023
- Kabushiki Kaisha Toshiba
- Kotaro Zaima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,804,520
- Issue date Oct 31, 2023
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
4H—SiC electronic device with improved short-circuit performances,...
- Patent number 11,798,981
- Issue date Oct 24, 2023
- STMicroelectronics S.r.l.
- Mario Giuseppe Saggio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active antenna device based on silicon ring field effect transistor...
- Patent number 11,784,249
- Issue date Oct 10, 2023
- Ulsan National Institute of Science and Technology
- Kyung Rok Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor module
- Patent number 11,784,246
- Issue date Oct 10, 2023
- Kabushiki Kaisha Toshiba
- Ryohei Gejo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor module
- Patent number 11,777,020
- Issue date Oct 3, 2023
- Fuji Electric Co., Ltd.
- Atsushi Shoji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,777,028
- Issue date Oct 3, 2023
- Kabushiki Kaisha Toshiba
- Yusuke Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor with a doped region
- Patent number 11,769,824
- Issue date Sep 26, 2023
- Texas Instruments Incorporated
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURES INCLUDING CONDUCTING STRUCTURE AND METHODS...
- Publication number 20240145593
- Publication date May 2, 2024
- Peiching LING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240136405
- Publication date Apr 25, 2024
- HYUNDAI MOBIS CO., LTD.
- Ju Hwan LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC-IGBT AND MANUFACTURING METHOD OF RC-IGBT
- Publication number 20240136353
- Publication date Apr 25, 2024
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20240136417
- Publication date Apr 25, 2024
- UNITED MICROELECTRONICS CORP.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) INCLUDI...
- Publication number 20240128323
- Publication date Apr 18, 2024
- THE RESEARCH FOUNDATION FOR THE STATE UNIVERSTIY OF NEW YORK
- Woongje SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHODS FOR MANUFACTURING THE SAME
- Publication number 20240128313
- Publication date Apr 18, 2024
- Vanguard International Semiconductor Corporation
- Tse-Hsiao LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CHARGE EXTRACTION STRUCTURE FOR EDGE TERMINATION
- Publication number 20240120417
- Publication date Apr 11, 2024
- NEXGEN POWER SYSTEMS, INC.
- Kyoung Wook Seok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICALLY CONDUCTIVE SEMICONDUCTOR STRUCTURES AND MANUFACTURING ME...
- Publication number 20240120370
- Publication date Apr 11, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240105834
- Publication date Mar 28, 2024
- Rohm Co., Ltd.
- Hajime OKUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240088275
- Publication date Mar 14, 2024
- RENESAS ELECTRONICS CORPORATION
- Masafumi HIROSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR DEVICE ARCHITECTURE
- Publication number 20240088229
- Publication date Mar 14, 2024
- Analog Devices International Unlimited Company
- Edward John Coyne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20240088212
- Publication date Mar 14, 2024
- DENSO CORPORATION
- MASAKAZU WATANABE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240088257
- Publication date Mar 14, 2024
- SK HYNIX INC.
- Beom-Yong KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240088213
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Fu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240079489
- Publication date Mar 7, 2024
- Hon Young Semiconductor Corporation
- Kuang-Hao CHIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DEPLETION AND ENHANCEMENT MODE GALLIUM NITRIDE HIGH-ELEC...
- Publication number 20240063219
- Publication date Feb 22, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME
- Publication number 20240063256
- Publication date Feb 22, 2024
- Changxin Memory Technologies, Inc.
- Zheng HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...
- Publication number 20240055473
- Publication date Feb 15, 2024
- Monolithic Power Systems, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A POWER SEM...
- Publication number 20240055495
- Publication date Feb 15, 2024
- Hitachi Energy Switzerland AG
- Stephan WIRTHS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3DSFET STANDARD CELL ARCHITECTURE WITH SOURCE-DRAIN JUNCTION ISOLATION
- Publication number 20240047456
- Publication date Feb 8, 2024
- Samsung Electronics Co., Ltd.
- Ming HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS DEVICE WITH RESISTIVE FIELD PLATE FOR REALIZING CONDUCTANCE MOD...
- Publication number 20240038853
- Publication date Feb 1, 2024
- No. 24 Research Institute of China Electronics Technology Group Corporation
- Kaizhou TAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240038834
- Publication date Feb 1, 2024
- DENSO CORPORATION
- Hiromichi KIMPARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
- Publication number 20240030324
- Publication date Jan 25, 2024
- Fuji Electric Co., Ltd.
- Atsushi SHOJI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20240030330
- Publication date Jan 25, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Chuan HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DEVICE, AND MANUF...
- Publication number 20240014255
- Publication date Jan 11, 2024
- LG ELECTRONICS INC.
- Seung Yup JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE MODULATION BY GATE HEIGHT VARIATION
- Publication number 20240014256
- Publication date Jan 11, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240014258
- Publication date Jan 11, 2024
- Rohm Co., Ltd.
- Yuki Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20230420517
- Publication date Dec 28, 2023
- Rohm Co., Ltd.
- Hirotaka OTAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR STRUCTURE WITH LO...
- Publication number 20230402504
- Publication date Dec 14, 2023
- Invention And Collaboration Laboratory Pte. Ltd.
- Chao-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE
- Publication number 20230395650
- Publication date Dec 7, 2023
- ROHM CO., LTD.
- Hirotaka OTAKE
- H01 - BASIC ELECTRIC ELEMENTS

for preventing surface leakage or controlling electric field concentration

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and method of fabricating the same

High-speed level-shifter for power-conversion applications

Semiconductor device

High voltage device with boosted breakdown voltage

Semiconductor device

Method of making decoupling capacitor

Semiconductor device and method of fabricating the same

Semiconductor structure

SOI lateral homogenization field high voltage power semiconductor d...

Complementary MOSFET structure with localized isolations in silicon...

Semiconductor device and manufacturing method therefor

Semiconductor device and method of manufacturing the same

Semiconductor device and method of fabricating the same

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing semiconductor device

Semiconductor device

Vertical field effect transistor with dual threshold voltage

Semiconductor device and method for fabricating the same

Method of fabricating semiconductor structure

RF switch device having a highly resistive substrate, an isolation...

Semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device

Semiconductor device

4H—SiC electronic device with improved short-circuit performances,...

Active antenna device based on silicon ring field effect transistor...

Semiconductor device and semiconductor module

Semiconductor device and semiconductor module

Semiconductor device

Gallium nitride transistor with a doped region

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURES INCLUDING CONDUCTING STRUCTURE AND METHODS...

POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

RC-IGBT AND MANUFACTURING METHOD OF RC-IGBT

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFET) INCLUDI...

SEMICONDUCTOR STRUCTURE AND METHODS FOR MANUFACTURING THE SAME

NEGATIVE CHARGE EXTRACTION STRUCTURE FOR EDGE TERMINATION

VERTICALLY CONDUCTIVE SEMICONDUCTOR STRUCTURES AND MANUFACTURING ME...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

LOW GATE CURRENT JUNCTION FIELD EFFECT TRANSISTOR DEVICE ARCHITECTURE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

INTEGRATED DEPLETION AND ENHANCEMENT MODE GALLIUM NITRIDE HIGH-ELEC...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME

SEMICONDUCTOR DEVICE WITH INTEGRATED JUNCTION FIELD EFFECT TRANSIST...

POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A POWER SEM...

3DSFET STANDARD CELL ARCHITECTURE WITH SOURCE-DRAIN JUNCTION ISOLATION

MOS DEVICE WITH RESISTIVE FIELD PLATE FOR REALIZING CONDUCTANCE MOD...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DEVICE, AND MANUF...

THRESHOLD VOLTAGE MODULATION BY GATE HEIGHT VARIATION

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR STRUCTURE WITH LO...

NITRIDE SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE