having a two-dimensional base

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H01L29/7373

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7373having a two-dimensional base

Industries

Patents Grantslast 30 patents

Information Patent Grant
Heterojunction bipolar transistor with emitter base junction oxide...
- Patent number 11,848,192
- Issue date Dec 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor de...
- Patent number 11,456,374
- Issue date Sep 27, 2022
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solar cell with reduced surface recombination
- Patent number 11,239,378
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance super-beta NPN (SBNPN)
- Patent number 11,205,718
- Issue date Dec 21, 2021
- Texas Instruments Incorporated
- Bernhard Benna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High ruggedness heterojunction bipolar transistor
- Patent number 11,133,405
- Issue date Sep 28, 2021
- Visual Photonics Epitaxy Co., Ltd.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping and fabrication of diamond and C-BN based device structures
- Patent number 11,011,514
- Issue date May 18, 2021
- North Carolina State University
- Jagdish Narayan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with emitter base junction oxide...
- Patent number 10,916,642
- Issue date Feb 9, 2021
- GLOBALFOUNDRIES U.S. INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with an inverted crystalline bou...
- Patent number 10,818,772
- Issue date Oct 27, 2020
- GLOBALFOUNDRIES Inc.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor structure with a bandgap graded h...
- Patent number 10,818,781
- Issue date Oct 27, 2020
- Visual Photonics Epitaxy Co., Ltd.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 10,490,646
- Issue date Nov 26, 2019
- Fuji Electric Co., Ltd.
- Yuichi Onozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction bipolar transistor and electric device
- Patent number 10,014,399
- Issue date Jul 3, 2018
- Powdec K.K.
- Hiroji Kawai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulation doped super-lattice base for heterojunction bipolar tran...
- Patent number 8,957,455
- Issue date Feb 17, 2015
- HRL Laboratories, LLC
- James Chingwei Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulation doped super-lattice base for heterojunction bipolar tran...
- Patent number 8,178,946
- Issue date May 15, 2012
- HRL Laboratories, LLC
- James Chingwei Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface plasmon polariton actuated transistors
- Patent number 7,960,753
- Issue date Jun 14, 2011
- The Aerospace Corporation
- Joshua A. Conway
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Strained quantum-well semiconductor devices
- Patent number 7,960,755
- Issue date Jun 14, 2011
- QinetiQ Limited
- Timothy J Phillips
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optoelectronic circuit employing a heterojunction thyristor device...
- Patent number 7,595,516
- Issue date Sep 29, 2009
- The University of Connecticut
- Geoff W. Taylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Imaging method utilizing thyristor-based pixel elements
- Patent number 7,432,539
- Issue date Oct 7, 2008
- The University of Connecticut
- Geoff W. Taylor
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Optoelectronic circuit employing a heterojunction thyristor device...
- Patent number 7,332,752
- Issue date Feb 19, 2008
- The University of Connecticut
- Geoff W. Taylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Imaging array utilizing thyristor-based pixel elements
- Patent number 7,247,892
- Issue date Jul 24, 2007
- Geoff W. Taylor
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Heterojunction III-V transistor, in particular HEMT field effect tr...
- Patent number 6,787,822
- Issue date Sep 7, 2004
- Picogiga International
- Linh T. Nuyen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having base region with coupled delta layers
- Patent number 5,965,931
- Issue date Oct 12, 1999
- The Board of Regents of the University of California
- Kang L. Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned poly emitter bipolar technology using damascene technique
- Patent number 5,904,536
- Issue date May 18, 1999
- National Semiconductor Corporation
- Christopher S. Blair
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor for very high frequencies
- Patent number 5,798,539
- Issue date Aug 25, 1998
- Daimler-Benz AG
- Helmut Jorke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,567,961
- Issue date Oct 22, 1996
- Hitachi, Ltd.
- Toshiyuki Usagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a heterojunction and a two dimensional...
- Patent number 5,381,027
- Issue date Jan 10, 1995
- Hitachi, Ltd.
- Toshiyuki Usagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed logic circuit
- Patent number 5,293,084
- Issue date Mar 8, 1994
- Hitachi, Ltd.
- Hiroyuki Itoh
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device having a two-dimensional electron gas as an ac...
- Patent number 5,258,631
- Issue date Nov 2, 1993
- Hitachi, Ltd.
- Toshiyuki Usagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor provided with strained germanium layer
- Patent number 5,241,197
- Issue date Aug 31, 1993
- Hitachi, Ltd.
- Eiichi Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulation doped base heterojunction bipolar transistor
- Patent number 5,099,299
- Issue date Mar 24, 1992
- International Business Machines Corporation
- Frank F. Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar hot electron transistor
- Patent number 4,926,221
- Issue date May 15, 1990
- AT&T Bell Laboratories
- Anthony F. J. Levi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH EMITTER BASE JUNCTION OXIDE...
- Publication number 20210104621
- Publication date Apr 8, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH EMITTER BASE JUNCTION OXIDE...
- Publication number 20200335612
- Publication date Oct 22, 2020
- GLOBALFOUNDRIES INC.
- Vibhor JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH RUGGEDNESS HETEROJUNCTION BIPOLAR TRANSISTOR
- Publication number 20200203510
- Publication date Jun 25, 2020
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE WITH A BANDGAP GRADED H...
- Publication number 20200194573
- Publication date Jun 18, 2020
- VISUAL PHOTONICS EPITAXY CO., LTD.
- Chao-Hsing Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING AND FABRICATION OF DIAMOND AND C-BN BASED DEVICE STRUCTURES
- Publication number 20190363078
- Publication date Nov 28, 2019
- Jagdish Narayan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS WITH AN INVERTED CRYSTALLINE BOU...
- Publication number 20190326411
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Vibhor Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-JUNCTION BIPOLAR TRANSISTOR AND ELECTRIC DEVICE
- Publication number 20180175182
- Publication date Jun 21, 2018
- POWDEK K.K.
- Hiroji KAWAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20100283084
- Publication date Nov 11, 2010
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface plasmon polariton actuated transistors
- Publication number 20090065801
- Publication date Mar 12, 2009
- Joshua A. Conway
- G02 - OPTICS
Information Patent Application
Optoelectronic Circuit Employing a Heterojunction Thyristor Device...
- Publication number 20080135831
- Publication date Jun 12, 2008
- Geoff W. Taylor
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Imaging Method Utilizing Thyristor-Based Pixel Elements
- Publication number 20070257275
- Publication date Nov 8, 2007
- Geoff W. Taylor
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Strained semiconductor devices
- Publication number 20070029574
- Publication date Feb 8, 2007
- Timothy J. Phillips
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optoelectronic circuit employing a heterojunction thyristor device...
- Publication number 20040094760
- Publication date May 20, 2004
- The University of Connecticut
- Geoff W. Taylor
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Imaging array utilizing thyristor-based pixel elements
- Publication number 20040079971
- Publication date Apr 29, 2004
- The University of Connecticut
- Geoff W. Taylor
- H04 - ELECTRIC COMMUNICATION TECHNIQUE

having a two-dimensional base

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Heterojunction bipolar transistor with emitter base junction oxide...

Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor de...

Solar cell with reduced surface recombination

High performance super-beta NPN (SBNPN)

High ruggedness heterojunction bipolar transistor

Doping and fabrication of diamond and C-BN based device structures

Heterojunction bipolar transistor with emitter base junction oxide...

Heterojunction bipolar transistors with an inverted crystalline bou...

Heterojunction bipolar transistor structure with a bandgap graded h...

Semiconductor device and semiconductor device manufacturing method

Hetero-junction bipolar transistor and electric device

Modulation doped super-lattice base for heterojunction bipolar tran...

Modulation doped super-lattice base for heterojunction bipolar tran...

Surface plasmon polariton actuated transistors

Strained quantum-well semiconductor devices

Optoelectronic circuit employing a heterojunction thyristor device...

Imaging method utilizing thyristor-based pixel elements

Optoelectronic circuit employing a heterojunction thyristor device...

Imaging array utilizing thyristor-based pixel elements

Heterojunction III-V transistor, in particular HEMT field effect tr...

Bipolar transistor having base region with coupled delta layers

Self aligned poly emitter bipolar technology using damascene technique

Bipolar transistor for very high frequencies

Semiconductor device

Semiconductor device having a heterojunction and a two dimensional...

High speed logic circuit

Semiconductor device having a two-dimensional electron gas as an ac...

Transistor provided with strained germanium layer

Modulation doped base heterojunction bipolar transistor

Bipolar hot electron transistor

Patents Applicationslast 30 patents

HETEROJUNCTION BIPOLAR TRANSISTOR WITH EMITTER BASE JUNCTION OXIDE...

HETEROJUNCTION BIPOLAR TRANSISTOR WITH EMITTER BASE JUNCTION OXIDE...

HIGH RUGGEDNESS HETEROJUNCTION BIPOLAR TRANSISTOR

HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE WITH A BANDGAP GRADED H...

DOPING AND FABRICATION OF DIAMOND AND C-BN BASED DEVICE STRUCTURES

HETEROJUNCTION BIPOLAR TRANSISTORS WITH AN INVERTED CRYSTALLINE BOU...

HETERO-JUNCTION BIPOLAR TRANSISTOR AND ELECTRIC DEVICE

BIPOLAR TRANSISTOR AND METHOD FOR FABRICATING THE SAME

Surface plasmon polariton actuated transistors

Optoelectronic Circuit Employing a Heterojunction Thyristor Device...

Imaging Method Utilizing Thyristor-Based Pixel Elements

Strained semiconductor devices

Optoelectronic circuit employing a heterojunction thyristor device...

Imaging array utilizing thyristor-based pixel elements