Hot carrier produced by avalanche breakdown of a PN junction

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H01L29/7886

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/7886Hot carrier produced by avalanche breakdown of a PN junction

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Patents Grantslast 30 patents

Information Patent Grant
Protection against electrostatic discharges and filtering
- Patent number 11,664,367
- Issue date May 30, 2023
- STMicroelectronics (Tours) SAS
- Patrick Poveda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection against electrostatic discharges and filtering
- Patent number 11,329,040
- Issue date May 10, 2022
- STMicroelectronics (Tours) SAS
- Patrick Poveda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Defect reduction of semiconductor layers and semiconductor devices...
- Patent number 11,018,023
- Issue date May 25, 2021
- Semiconductor Components Industries, LLC
- Ali Salih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal event sensor
- Patent number 10,451,489
- Issue date Oct 22, 2019
- The Charles Stark Draper Laboratory, Inc.
- Rob A. Bousquet
- G01 - MEASURING TESTING
Information Patent Grant
Multi-time programmable non-volatile memory cell and associated cir...
- Patent number 9,892,787
- Issue date Feb 13, 2018
- Chengdu Monolithic Power Systems Co., Ltd.
- Da Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
High voltage junctionless field effect device and its method of fab...
- Patent number 9,634,151
- Issue date Apr 25, 2017
- ZING SEMICONDUCTOR CORPORATION
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EPROM cells, EPROM cell arrays including the same, and methods of f...
- Patent number 9,450,107
- Issue date Sep 20, 2016
- SK Hynix Inc.
- Kwang Il Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor memory device having a floa...
- Patent number 8,617,951
- Issue date Dec 31, 2013
- Renesas Electronics Corporation
- Tomokazu Matsuzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-device non-volatile random access memory cell
- Patent number 7,485,513
- Issue date Feb 3, 2009
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Grant
Split gate flash memory cell and fabrication method thereof
- Patent number 7,485,917
- Issue date Feb 3, 2009
- ProMos Technologies Inc.
- Ching-Hung Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NOR flash memory cell with high storage density
- Patent number 7,476,586
- Issue date Jan 13, 2009
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a semiconductor integrated circuit device h...
- Patent number 7,399,667
- Issue date Jul 15, 2008
- Renesas Technology Corp.
- Kazuhiro Komori
- G11 - INFORMATION STORAGE
Information Patent Grant
NOR flash memory cell with high storage density
- Patent number 7,348,237
- Issue date Mar 25, 2008
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method for fabricating the same
- Patent number 7,338,864
- Issue date Mar 4, 2008
- Hynix Semiconductor Inc.
- Eung-Rim Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate nonvolatile memory device and method of manufacturing th...
- Patent number 7,160,777
- Issue date Jan 9, 2007
- Samsung Electronics Co., Ltd.
- Yong-Suk Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-device non-volatile random access memory cell
- Patent number 7,130,216
- Issue date Oct 31, 2006
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Grant
Nor flash memory cell with high storage density
- Patent number 7,113,429
- Issue date Sep 26, 2006
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit device having single-element type...
- Patent number 7,071,050
- Issue date Jul 4, 2006
- Hitachi, Ltd.
- Kazuhiro Komori
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method for fabricating the same
- Patent number 7,045,846
- Issue date May 16, 2006
- Hynix Semiconductor Inc.
- Se-Aug Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Twin EEPROM memory transistors with subsurface stepped floating gates
- Patent number 6,998,670
- Issue date Feb 14, 2006
- Atmel Corporation
- Bohumil Lojek
- G11 - INFORMATION STORAGE
Information Patent Grant
NOR flash memory cell with high storage density
- Patent number 6,996,009
- Issue date Feb 7, 2006
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a semiconductor memory device having a non-...
- Patent number 6,960,501
- Issue date Nov 1, 2005
- Renesas Technology Corp.
- Kazuhiro Komori
- G11 - INFORMATION STORAGE
Information Patent Grant
One-device non-volatile random access memory cell
- Patent number 6,903,969
- Issue date Jun 7, 2005
- Micron Technology Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating a flash memory cell
- Patent number 6,878,588
- Issue date Apr 12, 2005
- Hynix Semiconductor Inc.
- Cha Deok Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor memory device having a memo...
- Patent number 6,777,282
- Issue date Aug 17, 2004
- Renesas Technology Corp.
- Kazuhiro Komori
- G11 - INFORMATION STORAGE
Information Patent Grant
Split gate flash with strong source side injection and method of fa...
- Patent number 6,713,811
- Issue date Mar 30, 2004
- Taiwan Semiconductor Manufacturing Company
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a non-volatile memory transistor and m...
- Patent number 6,696,340
- Issue date Feb 24, 2004
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile electrically alterable semiconductor memory device
- Patent number 6,653,682
- Issue date Nov 25, 2003
- Interuniversitair Microelektronica Centrum (IMEL,VZW)
- Jan Van Houdt
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell
- Patent number 6,639,270
- Issue date Oct 28, 2003
- STMicroelectronics S.A.
- Cyrille Dray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory device and method for producing same
- Patent number 6,555,870
- Issue date Apr 29, 2003
- Kabushiki Kaisha Toshiba
- Ryouhei Kirisawa
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
PROTECTION AGAINST ELECTROSTATIC DISCHARGES AND FILTERING
- Publication number 20220238507
- Publication date Jul 28, 2022
- STMicroelectronics (Tours) SAS
- Patrick POVEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIME PROGRAMMABLE NON-VOLATILE MEMORY CELL AND ASSOCIATED CIR...
- Publication number 20170287559
- Publication date Oct 5, 2017
- Chengdu Monolithic Power Systems Co., Ltd.
- Da Chen
- G11 - INFORMATION STORAGE
Information Patent Application
THERMAL EVENT SENSOR
- Publication number 20170227405
- Publication date Aug 10, 2017
- The Charles Stark Draper Laboratory, Inc.
- Rob A. Bousquet
- G01 - MEASURING TESTING
Information Patent Application
HIGH VOLTAGE JUNCTIONLESS FIELD EFFECT DEVICE AND ITS METHOD OF FAB...
- Publication number 20170133510
- Publication date May 11, 2017
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING SINGLE-ELEMENT TYPE...
- Publication number 20080254582
- Publication date Oct 16, 2008
- Kazuhiro Komori
- G11 - INFORMATION STORAGE
Information Patent Application
Method of manufacturing a semiconductor memory device having a floa...
- Publication number 20080242026
- Publication date Oct 2, 2008
- NEC Electronics Corporation
- Tomokazu Matsuzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split gate flash memory cell and fabrication method thereof
- Publication number 20070093024
- Publication date Apr 26, 2007
- ProMos Technologies Inc.
- Ching-Hung Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOR FLASH MEMORY CELL WITH HIGH STORAGE DENSITY
- Publication number 20070015331
- Publication date Jan 18, 2007
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Application
One-device non-volatile random access memory cell
- Publication number 20060240653
- Publication date Oct 26, 2006
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor integrated circuit device having single-element type...
- Publication number 20060172482
- Publication date Aug 3, 2006
- Kazuhiro Komori
- G11 - INFORMATION STORAGE
Information Patent Application
Memory device and method for fabricating the same
- Publication number 20060160286
- Publication date Jul 20, 2006
- Eung-Rim Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Twin EEPROM memory transistors with subsurface stepped floating gates
- Publication number 20060118856
- Publication date Jun 8, 2006
- Atmel Corporation
- Bohumil Lojek
- G11 - INFORMATION STORAGE
Information Patent Application
Twin EEPROM memory transistors with subsurface stepped floating gates
- Publication number 20060113583
- Publication date Jun 1, 2006
- Atmel Corporation
- Bohumil Lojek
- G11 - INFORMATION STORAGE
Information Patent Application
Memory device and method for fabricating the same
- Publication number 20060022249
- Publication date Feb 2, 2006
- Se-Aug Jang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit device having single-element type...
- Publication number 20060014347
- Publication date Jan 19, 2006
- Kazuhiro Komori
- G11 - INFORMATION STORAGE
Information Patent Application
Flash memory cell and method of manufacturing the same
- Publication number 20050161729
- Publication date Jul 28, 2005
- Hynix Semiconductor Inc.
- Cha Deok Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nor flash memory cell with high storage density
- Publication number 20050085040
- Publication date Apr 21, 2005
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Application
Nor flash memory cell with high storage density
- Publication number 20050082599
- Publication date Apr 21, 2005
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Application
Split-gate nonvolatile memory device and method of manufacturing th...
- Publication number 20050051836
- Publication date Mar 10, 2005
- Yong-Suk Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Twin eeprom memory transistors with subsurface stepped floating gates
- Publication number 20040212005
- Publication date Oct 28, 2004
- Bohumil Lojek
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor integrated circuit device having single-element type...
- Publication number 20040191979
- Publication date Sep 30, 2004
- Kazuhiro Komori
- G11 - INFORMATION STORAGE
Information Patent Application
One-device non-volatile random access memory cell
- Publication number 20040160825
- Publication date Aug 19, 2004
- Micron Technology, Inc.
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-DEVICE NON-VOLATILE RANDOM ACCESS MEMORY CELL
- Publication number 20040042268
- Publication date Mar 4, 2004
- Arup Bhattacharyya
- G11 - INFORMATION STORAGE
Information Patent Application
Nor flash memory cell with high storage density
- Publication number 20030235079
- Publication date Dec 25, 2003
- Micron Technology, Inc.
- Leonard Forbes
- G11 - INFORMATION STORAGE
Information Patent Application
SPLIT GATE FLASH WITH STRONG SOURCE SIDE INJECTION AND METHOD OF FA...
- Publication number 20030218203
- Publication date Nov 27, 2003
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY
- Chia-Ta Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash memory cell and method of manufacturing the same
- Publication number 20030119256
- Publication date Jun 26, 2003
- Cha Deok Dong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit device having single-element type...
- Publication number 20020179963
- Publication date Dec 5, 2002
- Kazuhiro Komori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices having a non-volatile memory transistor and m...
- Publication number 20020146883
- Publication date Oct 10, 2002
- TOMOYUKI FURUHATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory cell
- Publication number 20020050610
- Publication date May 2, 2002
- STMicroelectronics S.A.
- Cyrille Dray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit device having single-element type...
- Publication number 20010038119
- Publication date Nov 8, 2001
- Kazuhiro Komori
- H01 - BASIC ELECTRIC ELEMENTS

Hot carrier produced by avalanche breakdown of a PN junction

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Protection against electrostatic discharges and filtering

Protection against electrostatic discharges and filtering

Defect reduction of semiconductor layers and semiconductor devices...

Thermal event sensor

Multi-time programmable non-volatile memory cell and associated cir...

High voltage junctionless field effect device and its method of fab...

EPROM cells, EPROM cell arrays including the same, and methods of f...

Method of manufacturing a semiconductor memory device having a floa...

One-device non-volatile random access memory cell

Split gate flash memory cell and fabrication method thereof

NOR flash memory cell with high storage density

Method of manufacturing a semiconductor integrated circuit device h...

NOR flash memory cell with high storage density

Memory device and method for fabricating the same

Split-gate nonvolatile memory device and method of manufacturing th...

One-device non-volatile random access memory cell

Nor flash memory cell with high storage density

Semiconductor integrated circuit device having single-element type...

Memory device and method for fabricating the same

Twin EEPROM memory transistors with subsurface stepped floating gates

NOR flash memory cell with high storage density

Method of manufacturing a semiconductor memory device having a non-...

One-device non-volatile random access memory cell

Method for fabricating a flash memory cell

Method of manufacturing a semiconductor memory device having a memo...

Split gate flash with strong source side injection and method of fa...

Semiconductor devices having a non-volatile memory transistor and m...

Non-volatile electrically alterable semiconductor memory device

Non-volatile memory cell

Nonvolatile semiconductor memory device and method for producing same

Patents Applicationslast 30 patents

PROTECTION AGAINST ELECTROSTATIC DISCHARGES AND FILTERING

MULTI-TIME PROGRAMMABLE NON-VOLATILE MEMORY CELL AND ASSOCIATED CIR...

THERMAL EVENT SENSOR

HIGH VOLTAGE JUNCTIONLESS FIELD EFFECT DEVICE AND ITS METHOD OF FAB...

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING SINGLE-ELEMENT TYPE...

Method of manufacturing a semiconductor memory device having a floa...

Split gate flash memory cell and fabrication method thereof

NOR FLASH MEMORY CELL WITH HIGH STORAGE DENSITY

One-device non-volatile random access memory cell

Semiconductor integrated circuit device having single-element type...

Memory device and method for fabricating the same

Twin EEPROM memory transistors with subsurface stepped floating gates

Twin EEPROM memory transistors with subsurface stepped floating gates

Memory device and method for fabricating the same

Semiconductor integrated circuit device having single-element type...

Flash memory cell and method of manufacturing the same

Nor flash memory cell with high storage density

Nor flash memory cell with high storage density

Split-gate nonvolatile memory device and method of manufacturing th...

Twin eeprom memory transistors with subsurface stepped floating gates

Semiconductor integrated circuit device having single-element type...

One-device non-volatile random access memory cell

ONE-DEVICE NON-VOLATILE RANDOM ACCESS MEMORY CELL

Nor flash memory cell with high storage density

SPLIT GATE FLASH WITH STRONG SOURCE SIDE INJECTION AND METHOD OF FA...

Flash memory cell and method of manufacturing the same

Semiconductor integrated circuit device having single-element type...

Semiconductor devices having a non-volatile memory transistor and m...

Non-volatile memory cell

Semiconductor integrated circuit device having single-element type...