Oxides or nitrides

Industry

CPC
H01L45/145

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L45/00Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier

Current Industry

H01L45/145Oxides or nitrides

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices comprising threshold switching materials
- Patent number 11,672,191
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for resistive RAM (ReRAM) performance stabilization via dry...
- Patent number 11,637,242
- Issue date Apr 25, 2023
- Tokyo Electron Limited
- Sergey Voronin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure and method for forming the same
- Patent number 11,637,240
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hsing-Lien Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device with vertical string including semiconduc...
- Patent number 11,574,677
- Issue date Feb 7, 2023
- Samsung Electronics Co., Ltd.
- Jungho Yoon
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory with embedded metal oxide fin for gradual switching
- Patent number 11,557,724
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 11,557,723
- Issue date Jan 17, 2023
- Samsung Electronics Co., Ltd.
- Jungho Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having variable resistance elements pro...
- Patent number 11,552,129
- Issue date Jan 10, 2023
- Kioxia Corporation
- Takuya Konno
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells, memory cell arrays, methods of using and methods of m...
- Patent number 11,545,217
- Issue date Jan 3, 2023
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with graded memory stack resistances
- Patent number 11,538,860
- Issue date Dec 27, 2022
- Micron Technology, Inc.
- Fabio Pellizzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buffer layer in memory cell to prevent metal redeposition
- Patent number 11,532,785
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D memory and manufacturing process
- Patent number 11,532,670
- Issue date Dec 20, 2022
- Commissariat A'Lenergie Atomique et aux Energies Alternatives
- Sylvain Barraud
- G11 - INFORMATION STORAGE
Information Patent Grant
Top electrode via with low contact resistance
- Patent number 11,527,713
- Issue date Dec 13, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bi-Shen Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory devices
- Patent number 11,515,475
- Issue date Nov 29, 2022
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Curtis Chun-I Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device and method of fabricating the same
- Patent number 11,502,130
- Issue date Nov 15, 2022
- Samsung Electronics Co., Ltd.
- Kyusul Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 11,495,292
- Issue date Nov 8, 2022
- Kioxia Corporation
- Kikuko Sugimae
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,476,416
- Issue date Oct 18, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Hai-Dang Trinh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS-compatible protonic resistive devices
- Patent number 11,462,683
- Issue date Oct 4, 2022
- Massachusetts Institute of Technology
- Oguzhan Murat Onen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and device including memristor material
- Patent number 11,462,267
- Issue date Oct 4, 2022
- Rockwell Collins, Inc.
- Kyle B. Snyder
- G11 - INFORMATION STORAGE
Information Patent Grant
Switch device, storage apparatus, and memory system incorporating b...
- Patent number 11,462,685
- Issue date Oct 4, 2022
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Hiroaki Sei
- G11 - INFORMATION STORAGE
Information Patent Grant
Ligand selection for ternary oxide thin films
- Patent number 11,462,398
- Issue date Oct 4, 2022
- International Business Machines Corporation
- Martin Michael Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices comprising metal oxide materials and related met...
- Patent number 11,444,243
- Issue date Sep 13, 2022
- Micron Technology, Inc.
- Santanu Sarkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative differential resistance element having 3-dimension vertica...
- Patent number 11,437,572
- Issue date Sep 6, 2022
- Research & Business Foundation Sungkyunkwan University
- Jin Hong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RRAM cell structure with conductive etch-stop layer
- Patent number 11,430,956
- Issue date Aug 30, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming Chyi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive random access memory device
- Patent number 11,411,178
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Chieh Mo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having variable resistance elements pro...
- Patent number 11,404,481
- Issue date Aug 2, 2022
- Kioxia Corporation
- Takuya Konno
- G11 - INFORMATION STORAGE
Information Patent Grant
Thin film based 1T-1R cell with resistive random access memory belo...
- Patent number 11,393,526
- Issue date Jul 19, 2022
- Intel Corporation
- Ravi Pillarisetty
- G11 - INFORMATION STORAGE
Information Patent Grant
Stack of horizontally extending and vertically overlapping features...
- Patent number 11,393,748
- Issue date Jul 19, 2022
- Micron Technology, Inc.
- Sanh D. Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Formation of structurally robust nanoscale Ag-based conductive stru...
- Patent number 11,387,409
- Issue date Jul 12, 2022
- Crossbar, Inc.
- Sung Hyun Jo
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile semiconductor storage device and method of manufacturin...
- Patent number 11,387,276
- Issue date Jul 12, 2022
- Kioxia Corporation
- Kotaro Noda
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells having increased structural stability
- Patent number 11,367,833
- Issue date Jun 21, 2022
- Intel Corporation
- Pavan Kumar Reddy Aella
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL
- Publication number 20240114807
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Victor W.C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL SIDEWALL HEATER
- Publication number 20240107900
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER
- Publication number 20240090352
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Paul Michael Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240074334
- Publication date Feb 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ming Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PCM DEVICE
- Publication number 20240008373
- Publication date Jan 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chang-Chih Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230413693
- Publication date Dec 21, 2023
- SK HYNIX INC.
- Jeong Hwan SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230413699
- Publication date Dec 21, 2023
- SK HYNIX INC.
- Hye Jung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU FORMATION OF A SPACER LAYER FOR PROTECTING SIDEWALLS OF A P...
- Publication number 20230263079
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Tsung-Hsueh Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE ENCAPSULATION OF MEMRISTIVE ELEMENT
- Publication number 20230200265
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Kevin W. Brew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CONDUCTIVE BRIDGE RANDOM ACCESS MEMORY AND ACCESS DEVICES
- Publication number 20230200269
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Hiroyuki Miyazoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GLOBAL HEATER FOR PHASE CHANGE MEMORY
- Publication number 20230180644
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Nanbo Gong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS
- Publication number 20230180636
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES
- Publication number 20230180643
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230165173
- Publication date May 25, 2023
- SK HYNIX INC.
- Gwang Hyuk SHIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY COMPRISING CONDUCTIVE FERROELECTRIC MATERIAL IN SERIES WITH...
- Publication number 20230147275
- Publication date May 11, 2023
- Intel Corporation
- Charles Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20230135287
- Publication date May 4, 2023
- SK HYNIX INC.
- Jeong Hwan SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells, Memory Cell Arrays, Methods of Using and Methods of M...
- Publication number 20230125479
- Publication date Apr 27, 2023
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL
- Publication number 20230129619
- Publication date Apr 27, 2023
- International Business Machines Corporation
- Injo Ok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY CELL HAVING PILLAR BOTTOM ELECTRODE WITH IMPROV...
- Publication number 20230122498
- Publication date Apr 20, 2023
- International Business Machines Corporation
- JUNTAO LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID TRANSISTOR AND MEMORY CELL
- Publication number 20230124085
- Publication date Apr 20, 2023
- The Regents of the University of California
- Kaustav Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION
- Publication number 20230100433
- Publication date Mar 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-Chiang Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A MEMORY RESISTOR DEVICE
- Publication number 20230092998
- Publication date Mar 23, 2023
- UCL Business LTD
- Longfei Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CBRAM BOTTOM ELECTRODE STRUCTURES
- Publication number 20230086109
- Publication date Mar 23, 2023
- Dialog Semiconductor US Inc.
- John R. Jameson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY FOR ANALOG COMPUTING
- Publication number 20230089791
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20230083978
- Publication date Mar 16, 2023
- Samsung Electronics Co., Ltd.
- Jungho Yoon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY DEVICE AND PRODUCTION METHOD
- Publication number 20230060860
- Publication date Mar 2, 2023
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Christelle CHARPIN-NICOLLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230062897
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- HAI-DANG TRINH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...
- Publication number 20230024213
- Publication date Jan 26, 2023
- KIOXIA Corporation
- Kikuko SUGIMAE
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING PHASE CHANGE MEMORY AND PHASE CHANGE MEMORY
- Publication number 20230024030
- Publication date Jan 26, 2023
- Beijing Advanced Memory Technology Co., Ltd.
- Dong GAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR OPERATING SAME
- Publication number 20230028701
- Publication date Jan 26, 2023
- Hefei Reliance Memory Limited
- Zezhi CHEN
- H01 - BASIC ELECTRIC ELEMENTS

Oxides or nitrides

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor devices comprising threshold switching materials

Methods for resistive RAM (ReRAM) performance stabilization via dry...

Semiconductor structure and method for forming the same

Nonvolatile memory device with vertical string including semiconduc...

Resistive memory with embedded metal oxide fin for gradual switching

Semiconductor device and method of manufacturing the same

Semiconductor memory device having variable resistance elements pro...

Memory cells, memory cell arrays, methods of using and methods of m...

Memory array with graded memory stack resistances

Buffer layer in memory cell to prevent metal redeposition

3D memory and manufacturing process

Top electrode via with low contact resistance

Resistive random access memory devices

Variable resistance memory device and method of fabricating the same

Resistive random access memory device with three-dimensional cross-...

Semiconductor device and method for manufacturing the same

CMOS-compatible protonic resistive devices

System and device including memristor material

Switch device, storage apparatus, and memory system incorporating b...

Ligand selection for ternary oxide thin films

Electronic devices comprising metal oxide materials and related met...

Negative differential resistance element having 3-dimension vertica...

RRAM cell structure with conductive etch-stop layer

Resistive random access memory device

Semiconductor memory device having variable resistance elements pro...

Thin film based 1T-1R cell with resistive random access memory belo...

Stack of horizontally extending and vertically overlapping features...

Formation of structurally robust nanoscale Ag-based conductive stru...

Nonvolatile semiconductor storage device and method of manufacturin...

Memory cells having increased structural stability

Patents Applicationslast 30 patents

HEATER FOR PHASE CHANGE MATERIAL MEMORY CELL

PHASE CHANGE MEMORY CELL SIDEWALL HEATER

RESISTIVE MEMORY WITH RESISTANCE SPREADING LAYER

PHASE-CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

PCM DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

IN-SITU FORMATION OF A SPACER LAYER FOR PROTECTING SIDEWALLS OF A P...

SELECTIVE ENCAPSULATION OF MEMRISTIVE ELEMENT

STACKED CONDUCTIVE BRIDGE RANDOM ACCESS MEMORY AND ACCESS DEVICES

GLOBAL HEATER FOR PHASE CHANGE MEMORY

SUPPRESSION OF VOID-FORMATION OF PCM MATERIALS

DRIFT MITIGATION FOR RESISTIVE MEMORY DEVICES

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

MEMORY COMPRISING CONDUCTIVE FERROELECTRIC MATERIAL IN SERIES WITH...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Memory Cells, Memory Cell Arrays, Methods of Using and Methods of M...

CONTACT RESISTANCE OF A METAL LINER IN A PHASE CHANGE MEMORY CELL

PHASE CHANGE MEMORY CELL HAVING PILLAR BOTTOM ELECTRODE WITH IMPROV...

HYBRID TRANSISTOR AND MEMORY CELL

BUFFER LAYER IN MEMORY CELL TO PREVENT METAL REDEPOSITION

METHOD FOR MANUFACTURING A MEMORY RESISTOR DEVICE

CBRAM BOTTOM ELECTRODE STRUCTURES

RESISTIVE MEMORY FOR ANALOG COMPUTING

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

RESISTIVE MEMORY DEVICE AND PRODUCTION METHOD

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH THREE-DIMENSIONAL CROSS-...

METHOD OF MANUFACTURING PHASE CHANGE MEMORY AND PHASE CHANGE MEMORY

RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR OPERATING SAME