Polycrystalline diffuse anneal

Industry

CPC
Y10S148/123

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/123Polycrystalline diffuse anneal

Industries

Patents Grantslast 30 patents

Information Patent Grant
Forming CMOS transistor using diffusion source and wet/dry oxidation
- Patent number 5,981,321
- Issue date Nov 9, 1999
- National Science Council
- Tien-Sheng Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor processing method of forming complementary n-type dop...
- Patent number 5,970,335
- Issue date Oct 19, 1999
- Micron Technology, Inc.
- Mark Helm
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming improved contacts from polysilicon to siliconor o...
- Patent number 5,801,087
- Issue date Sep 1, 1998
- Micron Technology, Inc.
- Monte Manning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having improved surface evenness
- Patent number 5,739,590
- Issue date Apr 14, 1998
- Canon Kabushiki Kaisha
- Masaru Sakamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor processing method of forming complementary N-type dop...
- Patent number 5,624,863
- Issue date Apr 29, 1997
- Micron Technology, Inc.
- Mark Helm
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a recrystallized layer and diffusing impurities
- Patent number 5,597,741
- Issue date Jan 28, 1997
- Canon Kabushiki Kaisha
- Masaru Sakamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming improved contacts from polysilicon to silicon or...
- Patent number 5,541,137
- Issue date Jul 30, 1996
- Micron Semiconductor Inc.
- Monte Manning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bicmos process that supports merged devices
- Patent number 5,541,134
- Issue date Jul 30, 1996
- Texas Instruments Incorporated
- Robert H. Eklund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparing semiconductor device using a tunnel oxidized...
- Patent number 5,476,799
- Issue date Dec 19, 1995
- Canon Kabushiki Kaisha
- Masaru Sakamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
BiCMOS process that supports merged devices
- Patent number 5,334,549
- Issue date Aug 2, 1994
- Texas Instruments Incorporated
- Robert H. Eklund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a region dope...
- Patent number 5,270,224
- Issue date Dec 14, 1993
- Fujitsu Limited
- Yuji Furumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping a polysilicon layer on a semiconductor wafer
- Patent number 5,244,831
- Issue date Sep 14, 1993
- Zilog, Inc.
- Gregory Hindman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparing semiconductor device by use of a flattening a...
- Patent number 5,242,858
- Issue date Sep 7, 1993
- Canon Kabushiki Kaisha
- Masaru Sakamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating compact bipolar transistor
- Patent number 5,204,275
- Issue date Apr 20, 1993
- North American Philips Corp.
- Richard H. Lane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,098,638
- Issue date Mar 24, 1992
- Matsushita Electric Industrial Co., Ltd.
- Shigeki Sawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse self-aligned transistor integrated circuit
- Patent number 5,071,780
- Issue date Dec 10, 1991
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Nun-Sian Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming buried contact between polysilicon gate and diffu...
- Patent number 5,064,776
- Issue date Nov 12, 1991
- Micron Technology, Inc.
- Martin C. Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming emitters in a BiCMOS process
- Patent number 5,047,357
- Issue date Sep 10, 1991
- Texas Instruments Incorporated
- Robert H. Eklund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned silicided base bipolar transistor and resistor and met...
- Patent number 5,045,483
- Issue date Sep 3, 1991
- National Semiconductor Corporation
- Bancherd DeLong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar process using selective silicon deposition
- Patent number 4,988,632
- Issue date Jan 29, 1991
- Motorola, Inc.
- James R. Pfiester
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a single polysilicon bipolar transistor which...
- Patent number 4,983,531
- Issue date Jan 8, 1991
- Motorola, Inc.
- Stephen J. Cosentino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a bi-CMOS device
- Patent number 4,965,216
- Issue date Oct 23, 1990
- STC PLC
- Peter D. Scovell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor integrated circuit device c...
- Patent number 4,965,220
- Issue date Oct 23, 1990
- Kabushiki Kaisha Toshiba
- Hiroshi Iwasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making cmos with shallow source and drain junctions
- Patent number 4,945,070
- Issue date Jul 31, 1990
- Harris Corporation
- Sheng T. Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method of manufacturing the same
- Patent number 4,882,290
- Issue date Nov 21, 1989
- Kabushiki Kaisha Toshiba
- Shigeru Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a self-aligned silicide contact using polysilicon...
- Patent number 4,882,297
- Issue date Nov 21, 1989
- Deutsche ITT Industries GmbH
- Lothar Blossfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method of manufacturing the same
- Patent number 4,879,252
- Issue date Nov 7, 1989
- Kabushiki Kaisha Toshiba
- Shigeru Komatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for outdiffusion of zinc into III-V substrates using zinc tu...
- Patent number 4,843,033
- Issue date Jun 27, 1989
- Texas Instruments Incorporated
- Donald L. Plumton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of high-speed dielectrically isolated devices utilizing...
- Patent number 4,839,309
- Issue date Jun 13, 1989
- American Telephone and Telegraph Company, AT&T Technologies, Inc.
- William G. Easter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a BiCMOS device
- Patent number 4,818,720
- Issue date Apr 4, 1989
- Kabushiki Kaisha Toshiba
- Hiroshi Iwasaki
- H01 - BASIC ELECTRIC ELEMENTS

Polycrystalline diffuse anneal

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Forming CMOS transistor using diffusion source and wet/dry oxidation

Semiconductor processing method of forming complementary n-type dop...

Method of forming improved contacts from polysilicon to siliconor o...

Semiconductor device having improved surface evenness

Semiconductor processing method of forming complementary N-type dop...

Process for forming a recrystallized layer and diffusing impurities

Method of forming improved contacts from polysilicon to silicon or...

Bicmos process that supports merged devices

Process for preparing semiconductor device using a tunnel oxidized...

BiCMOS process that supports merged devices

Method of manufacturing a semiconductor device having a region dope...

Method of doping a polysilicon layer on a semiconductor wafer

Process for preparing semiconductor device by use of a flattening a...

Method for fabricating compact bipolar transistor

Method of manufacturing a semiconductor device

Reverse self-aligned transistor integrated circuit

Method of forming buried contact between polysilicon gate and diffu...

Method for forming emitters in a BiCMOS process

Self-aligned silicided base bipolar transistor and resistor and met...

Bipolar process using selective silicon deposition

Method of fabricating a single polysilicon bipolar transistor which...

Method of fabricating a bi-CMOS device

Method of manufacturing a semiconductor integrated circuit device c...

Method of making cmos with shallow source and drain junctions

Semiconductor device and a method of manufacturing the same

Method of making a self-aligned silicide contact using polysilicon...

Semiconductor device and a method of manufacturing the same

Method for outdiffusion of zinc into III-V substrates using zinc tu...

Fabrication of high-speed dielectrically isolated devices utilizing...

Method for manufacturing a BiCMOS device