Power FETs

Industry

CPC
Y10S148/126

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/126Power FETs

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Patents Grantslast 30 patents

Information Patent Grant
Method for forming trench MOSFET device with low parasitic resistance
- Patent number 6,645,815
- Issue date Nov 11, 2003
- General Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench DMOS power transistor with field-shaping body profile and th...
- Patent number 6,627,950
- Issue date Sep 30, 2003
- Siliconix, Incorporated
- Constantin Bulucea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-density power device
- Patent number 6,369,425
- Issue date Apr 9, 2002
- SGS-Thomson Microelecttronica S.r.l.
- Giuseppe Ferla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage transistors and thyristors
- Patent number 6,162,665
- Issue date Dec 19, 2000
- IXYS Corporation
- Nathan Zommer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistors having vertical current flow
- Patent number 6,093,948
- Issue date Jul 25, 2000
- Consorzio per la Ricerca Sulle Microelettronica nel Mezzogiorno
- Raffaele Zambrano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a MOS-gated semiconductor device with a single dif...
- Patent number 6,080,614
- Issue date Jun 27, 2000
- John Manning Sauidge Neilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar junction transistors having built-in freewhe...
- Patent number 6,051,850
- Issue date Apr 18, 2000
- Fairchild Korea Semiconductor Ltd.
- Jae-Hong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor device including complementar...
- Patent number 6,017,797
- Issue date Jan 25, 2000
- NEC Corporation
- Akio Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a vertical power device with integrated contr...
- Patent number 5,994,188
- Issue date Nov 30, 1999
- Delco Electronics Corporation
- Donald Ray Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of high-density trench DMOS using sidewall spacers
- Patent number 5,904,525
- Issue date May 18, 1999
- Siliconix Incorporated
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus incorporating nitrogen selectively for differe...
- Patent number 5,904,575
- Issue date May 18, 1999
- Advanced Micro Devices, Inc.
- Emi Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench MISFET and method of manufacturing the same
- Patent number 5,885,878
- Issue date Mar 23, 1999
- Fuji Electric Co., Ltd.
- Naoto Fujishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned method of fabricating terrace gate DMOS transistor
- Patent number 5,879,994
- Issue date Mar 9, 1999
- National Semiconductor Corporation
- Sze-Hon Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral DMOS transistor for RF/microwave applications
- Patent number 5,841,166
- Issue date Nov 24, 1998
- Spectrian, Inc.
- Pablo E. D'Anna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral DMOS transistor for RF/microwave applications
- Patent number 5,821,144
- Issue date Oct 13, 1998
- Spectrian, Inc.
- Pablo E. D'Anna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making a MOS-technology power device
- Patent number 5,817,546
- Issue date Oct 6, 1998
- STMicroelectronics S.r.l.
- Giuseppe Ferla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated zener diode overvoltage protection structures in power D...
- Patent number 5,767,550
- Issue date Jun 16, 1998
- National Semiconductor Corporation
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a high voltage planar edge termination structure
- Patent number 5,714,396
- Issue date Feb 3, 1998
- Motorola, Inc.
- Stephen Robb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming insulated gate bipolar transistors having built-...
- Patent number 5,702,961
- Issue date Dec 30, 1997
- Samsung Electronics Co., Ltd.
- Jae-Hong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power integrated circuit ("PIC") structure with a vertical IGBT
- Patent number 5,703,385
- Issue date Dec 30, 1997
- Consorzio per la Ricerca Sulla Microelettronica nel Mezzogiorno
- Raffaele Zambrano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench MISFET
- Patent number 5,701,026
- Issue date Dec 23, 1997
- Fuji Electric Co., Ltd.
- Naoto Fujishima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device including a trench
- Patent number 5,696,010
- Issue date Dec 9, 1997
- Texas Instruments Incorporated
- Satwinder Malhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS resurf high voltage transistor
- Patent number 5,686,755
- Issue date Nov 11, 1997
- Texas Instruments Incorporated
- Satwinder Malhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing high-density MOS-technology power devices
- Patent number 5,670,392
- Issue date Sep 23, 1997
- SGS Thomson Microelectronics S.r.l.
- Giuseppe Ferla
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with current detecting function and method of...
- Patent number 5,654,560
- Issue date Aug 5, 1997
- Nippondenso Co., Ltd.
- Toshiaki Nishizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor having adjusted threshold voltage formed along with...
- Patent number 5,618,743
- Issue date Apr 8, 1997
- Siliconix Incorporated
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated zener diode protection structures and fabrication method...
- Patent number 5,602,046
- Issue date Feb 11, 1997
- National Semiconductor Corporation
- Daniel Calafut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a fully depleted lateral transistor
- Patent number 5,595,921
- Issue date Jan 21, 1997
- SGS-Thomson Microelectronics, S.r.l.
- Flavio Villa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating VDMOS transistor with improved breakdown cha...
- Patent number 5,589,405
- Issue date Dec 31, 1996
- SGS-Thomson Microelectronics, S.r.l.
- Claudio Contiero
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing field effect controlled semiconductor comp...
- Patent number 5,583,060
- Issue date Dec 10, 1996
- Siemens Aktiengesellschaft
- Helmut Hertrich
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for forming trench MOSFET device with low parasitic resistance
- Publication number 20030096480
- Publication date May 22, 2003
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for forming trench MOSFET device with low parasitic resistance

Trench DMOS power transistor with field-shaping body profile and th...

High-density power device

High voltage transistors and thyristors

MOS transistors having vertical current flow

Method of making a MOS-gated semiconductor device with a single dif...

Insulated gate bipolar junction transistors having built-in freewhe...

Method of fabricating a semiconductor device including complementar...

Method of fabricating a vertical power device with integrated contr...

Fabrication of high-density trench DMOS using sidewall spacers

Method and apparatus incorporating nitrogen selectively for differe...

Lateral trench MISFET and method of manufacturing the same

Self-aligned method of fabricating terrace gate DMOS transistor

Lateral DMOS transistor for RF/microwave applications

Lateral DMOS transistor for RF/microwave applications

Process of making a MOS-technology power device

Integrated zener diode overvoltage protection structures in power D...

Method of making a high voltage planar edge termination structure

Methods of forming insulated gate bipolar transistors having built-...

Power integrated circuit ("PIC") structure with a vertical IGBT

Lateral trench MISFET

Method of forming a semiconductor device including a trench

LDMOS resurf high voltage transistor

Process for manufacturing high-density MOS-technology power devices

Semiconductor device with current detecting function and method of...

MOS transistor having adjusted threshold voltage formed along with...

Integrated zener diode protection structures and fabrication method...

Method for fabricating a fully depleted lateral transistor

Method for fabricating VDMOS transistor with improved breakdown cha...

Method for manufacturing field effect controlled semiconductor comp...

Patents Applicationslast 30 patents

Method for forming trench MOSFET device with low parasitic resistance