Processes wherein the final gate is made before the formation

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H01L29/66878

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/66878Processes wherein the final gate is made before the formation

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Source/drain structure of semiconductor device
- Patent number 9,472,647
- Issue date Oct 18, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ying Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating transistors including self-aligned gate elec...
- Patent number 8,105,889
- Issue date Jan 31, 2012
- Cree, Inc.
- R. Peter Smith
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for fabricating a MESFET
- Patent number 7,485,514
- Issue date Feb 3, 2009
- Thomas A. Winslow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device for reducing a surfac...
- Patent number 7,449,399
- Issue date Nov 11, 2008
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device including exposing a...
- Patent number 7,122,451
- Issue date Oct 17, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor triode device having a compound-semiconductor channel...
- Patent number 6,822,307
- Issue date Nov 23, 2004
- Fujitsu Limited
- Mizuhisa Nihei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device
- Patent number 6,780,703
- Issue date Aug 24, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Randy D. Redd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device composed of a group III-V nitride semiconductor
- Patent number 6,737,683
- Issue date May 18, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an overhanging structure and method for...
- Patent number 6,730,586
- Issue date May 4, 2004
- Fujitsu Quantum Devices Limited
- Hiroshi Endoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,316,297
- Issue date Nov 13, 2001
- Fujitsu Quantum Devices Limited
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating compound semiconductor devices using lift-off...
- Patent number 6,204,102
- Issue date Mar 20, 2001
- Electronics and Telecommunications Research Institute
- Hyung Sup Yoon
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Compound semiconductor device and method of manufacturing the same
- Patent number 6,200,838
- Issue date Mar 13, 2001
- Fujitsu Quantum Devices Limited
- Kazutaka Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of compound semiconductor field effect transistor
- Patent number 6,114,195
- Issue date Sep 5, 2000
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having T-shaped gate electrode
- Patent number 6,075,262
- Issue date Jun 13, 2000
- Fujitsu Limited
- Toshiaki Moriuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device and fabrication method
- Patent number 6,037,200
- Issue date Mar 14, 2000
- Matsushita Electric Industrial Co. Ltd.
- Tomoya Uda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-speed semiconductor device having a dual-layer gate structure...
- Patent number 6,037,245
- Issue date Mar 14, 2000
- Fujitsu Quantum Devices Limited
- Hajime Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with refractory metal element
- Patent number 6,013,926
- Issue date Jan 11, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Tomoki Oku
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Multi-layered structure for ohmic electrode fabrication
- Patent number 5,982,036
- Issue date Nov 9, 1999
- Sony Corporation
- Chihiro Uchibori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a tapered gate electrode
- Patent number 5,907,177
- Issue date May 25, 1999
- Matsushita Electric Industrial Co.,Ltd.
- Tomoya Uda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating ohmic electrode and multi-layered structure...
- Patent number 5,904,554
- Issue date May 18, 1999
- Sony Corporation
- Chihiro Uchibori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 5,888,859
- Issue date Mar 30, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Tomoki Oku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,824,575
- Issue date Oct 20, 1998
- Matsushita Electric Industrial Co., Ltd.
- Hiromasa Fujimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating ohmic electrode and multi-layered structure...
- Patent number 5,767,007
- Issue date Jun 16, 1998
- Sony Corporation
- Chihiro Uchibori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device
- Patent number 5,728,611
- Issue date Mar 17, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Takayuki Hisaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a gate structure for a metal semiconductor...
- Patent number 5,688,703
- Issue date Nov 18, 1997
- Motorola, Inc.
- Lawrence S. Klingbeil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High breakdown voltage field effect transistor
- Patent number 5,648,668
- Issue date Jul 15, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Nobuyuki Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method of producing same
- Patent number 5,640,029
- Issue date Jun 17, 1997
- Toyota Jidosha Kabushiki Kaisha
- Toyokazu Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating an elevated-gate field effect transistor
- Patent number 5,631,175
- Issue date May 20, 1997
- Motorola, Inc.
- James G. Gilbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing metal semiconductor field effect transistor
- Patent number 5,585,289
- Issue date Dec 17, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Kitano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned FET having etched ohmic contacts
- Patent number 5,583,355
- Issue date Dec 10, 1996
- Motorola, Inc.
- Bruce A. Bernhardt
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20230326758
- Publication date Oct 12, 2023
- Mitsubishi Electric Corporation
- Koichiro NISHIZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN STRUCTURE OF SEMICONDUCTOR DEVICE
- Publication number 20140264445
- Publication date Sep 18, 2014
- Ying Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110291203
- Publication date Dec 1, 2011
- Kabushiki Kaisha Toshiba
- Akio MIYAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING TRANSISTORS INCLUDING SELF-ALIGNED GATE ELEC...
- Publication number 20110018040
- Publication date Jan 27, 2011
- R. Peter Smith
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for fabricating a MESFET
- Publication number 20070155072
- Publication date Jul 5, 2007
- M/A-COM, Inc.
- Thomas A. Winslow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Rugged MESFET for Power Applications
- Publication number 20070120153
- Publication date May 31, 2007
- Advanced Analogic Technologies, Inc.
- Richard K. Williams
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20070020896
- Publication date Jan 25, 2007
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20040175853
- Publication date Sep 9, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a semiconductor device
- Publication number 20040043548
- Publication date Mar 4, 2004
- Randy D. Redd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030160269
- Publication date Aug 28, 2003
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Kaoru Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor triode device having a compound-semiconductor channel...
- Publication number 20020163012
- Publication date Nov 7, 2002
- Fujitsu Limited
- Mizuhisa Nihei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20020140041
- Publication date Oct 3, 2002
- FUJITSU QUANTUM DEVICES LIMITED
- Hiroshi Endoh
- H01 - BASIC ELECTRIC ELEMENTS

Processes wherein the final gate is made before the formation

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Source/drain structure of semiconductor device

Methods of fabricating transistors including self-aligned gate elec...

Method for fabricating a MESFET

Method for fabricating a semiconductor device for reducing a surfac...

Method for fabricating a semiconductor device including exposing a...

Semiconductor triode device having a compound-semiconductor channel...

Method for forming a semiconductor device

Semiconductor device composed of a group III-V nitride semiconductor

Semiconductor device having an overhanging structure and method for...

Semiconductor device and method for fabricating the same

Method of fabricating compound semiconductor devices using lift-off...

Compound semiconductor device and method of manufacturing the same

Manufacturing method of compound semiconductor field effect transistor

Semiconductor device having T-shaped gate electrode

Compound semiconductor device and fabrication method

High-speed semiconductor device having a dual-layer gate structure...

Semiconductor device with refractory metal element

Multi-layered structure for ohmic electrode fabrication

Semiconductor device having a tapered gate electrode

Method for fabricating ohmic electrode and multi-layered structure...

Method of fabricating semiconductor device

Semiconductor device and method of manufacturing the same

Method for fabricating ohmic electrode and multi-layered structure...

Method of fabricating semiconductor device

Method of manufacturing a gate structure for a metal semiconductor...

High breakdown voltage field effect transistor

Field-effect transistor and method of producing same

Method for fabricating an elevated-gate field effect transistor

Method of producing metal semiconductor field effect transistor

Self-aligned FET having etched ohmic contacts

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SOURCE/DRAIN STRUCTURE OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHODS OF FABRICATING TRANSISTORS INCLUDING SELF-ALIGNED GATE ELEC...

Method for fabricating a MESFET

Rugged MESFET for Power Applications

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Method for forming a semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor triode device having a compound-semiconductor channel...

Semiconductor device and method for fabricating the same