Reactive ion etching rie

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CPC
Y10S148/131

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

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Y10S148/131Reactive ion etching rie

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a semiconductor device with stabilization...
- Patent number 5,926,705
- Issue date Jul 20, 1999
- NEC Corporation
- Takuo Nishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming solder bumps in semiconductor devices
- Patent number 5,508,229
- Issue date Apr 16, 1996
- National Semiconductor Corporation
- Mark H. Baker
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,356,823
- Issue date Oct 18, 1994
- Kabushiki Kaisha Toshiba
- Tatsuro Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a bottom and top gated thin film transistor
- Patent number 5,348,899
- Issue date Sep 20, 1994
- Micron Semiconductor, Inc.
- Charles H. Dennison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of polycide residues through helium backside pressure con...
- Patent number 5,342,476
- Issue date Aug 30, 1994
- VLSI Technology, Inc.
- John L. Cain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preventing the corrosion of metallic wirings
- Patent number 5,312,776
- Issue date May 17, 1994
- Matsushita Electric Industrial Co., Ltd.
- Tomoyasu Murakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device terminal having a gold...
- Patent number 5,298,459
- Issue date Mar 29, 1994
- Seiko Epson Corporation
- Shinichiro Arikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making two-phase charge coupled device
- Patent number 5,292,682
- Issue date Mar 8, 1994
- Eastman Kodak Company
- Eric G. Stevens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of cleaning a plurality of semiconductor devices
- Patent number 5,259,925
- Issue date Nov 9, 1993
- McDonnell Douglas Corporation
- Robert W. Herrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing fusible links in semiconductor devices
- Patent number 5,244,836
- Issue date Sep 14, 1993
- North American Philips Corporation
- Sheldon C. P. Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for interconnecting layers in a semiconductor device using t...
- Patent number 5,234,864
- Issue date Aug 10, 1993
- Samsung Electronics Co., Ltd.
- Jin-hong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,227,319
- Issue date Jul 13, 1993
- Kabushiki Kaisha Toshiba
- Mitsugi Ogura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High CF.sub.4 flow-reactive ion etch for aluminum patterning
- Patent number 5,202,291
- Issue date Apr 13, 1993
- Intel Corporation
- Peter K. Charvat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,183,781
- Issue date Feb 2, 1993
- NEC Corporation
- Eiichi Nakano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a fine pattern by using a patterned resist layer
- Patent number 5,171,718
- Issue date Dec 15, 1992
- Sony Corporation
- Akira Ishibashi
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of fabricating patterned epitaxial silicon films utilizing m...
- Patent number 5,134,090
- Issue date Jul 28, 1992
- AT&T Bell Laboratories
- John C. Bean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graphoepitaxy using energy beams
- Patent number 5,122,223
- Issue date Jun 16, 1992
- Massachusetts Institute of Technology
- Michael W. Geis
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming a bump electrode for a semiconductor device
- Patent number 5,108,950
- Issue date Apr 28, 1992
- Casio Computer Co., Ltd.
- Takeshi Wakabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device using chemical-mechani...
- Patent number 5,084,419
- Issue date Jan 28, 1992
- NEC Corporation
- Masato Sakao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming electrodes for semiconductor devices by focused...
- Patent number 5,043,290
- Issue date Aug 27, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Tadashi Nishioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device including outdiffusi...
- Patent number 5,008,209
- Issue date Apr 16, 1991
- U.S. Philips Corporation
- Johannes A. Appels
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for improving radiation tolerance of silicon gate CMOS/sili...
- Patent number 5,006,479
- Issue date Apr 9, 1991
- Rockwell International Corporation
- Jerry V. Brandewie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for suppressing ionization avalanches in a helium wafer cool...
- Patent number 4,999,320
- Issue date Mar 12, 1991
- Texas Instruments Incorporated
- Monte A. Douglas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor devices with sub-micron linewidths
- Patent number 4,963,501
- Issue date Oct 16, 1990
- Rockwell International Corporation
- Frank J. Ryan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming electrodes for semiconductor devices using focu...
- Patent number 4,962,059
- Issue date Oct 9, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Tadashi Nishioka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planarizing contact etch
- Patent number 4,939,105
- Issue date Jul 3, 1990
- Micron Technology, Inc.
- Rod C. Langley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a short-channel low voltage DMOS transistor
- Patent number 4,931,408
- Issue date Jun 5, 1990
- Siliconix Incorporated
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices including at least a...
- Patent number 4,925,813
- Issue date May 15, 1990
- U.S. Philips Corporation
- Philippe Autier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
T-type undercut electrical contact process on a semiconductor subst...
- Patent number 4,923,827
- Issue date May 8, 1990
- Eaton Corporation
- Joseph A. Calviello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for separating monolithically produced laser diodes
- Patent number 4,904,617
- Issue date Feb 27, 1990
- Siemens Aktiengesellschaft
- Markus Muschke
- H01 - BASIC ELECTRIC ELEMENTS

Reactive ion etching rie

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for manufacturing a semiconductor device with stabilization...

Method for forming solder bumps in semiconductor devices

Method of manufacturing a semiconductor device

Method of fabricating a bottom and top gated thin film transistor

Reduction of polycide residues through helium backside pressure con...

Method of preventing the corrosion of metallic wirings

Method of manufacturing semiconductor device terminal having a gold...

Method of making two-phase charge coupled device

Method of cleaning a plurality of semiconductor devices

Method of manufacturing fusible links in semiconductor devices

Method for interconnecting layers in a semiconductor device using t...

Method of manufacturing a semiconductor device

High CF.sub.4 flow-reactive ion etch for aluminum patterning

Method of manufacturing semiconductor device

Method for forming a fine pattern by using a patterned resist layer

Method of fabricating patterned epitaxial silicon films utilizing m...

Graphoepitaxy using energy beams

Method for forming a bump electrode for a semiconductor device

Method of manufacturing semiconductor device using chemical-mechani...

Process for forming electrodes for semiconductor devices by focused...

Method of manufacturing a semiconductor device including outdiffusi...

Methods for improving radiation tolerance of silicon gate CMOS/sili...

Method for suppressing ionization avalanches in a helium wafer cool...

Method of fabricating semiconductor devices with sub-micron linewidths

Process for forming electrodes for semiconductor devices using focu...

Planarizing contact etch

Method of fabricating a short-channel low voltage DMOS transistor

Method of manufacturing semiconductor devices including at least a...

T-type undercut electrical contact process on a semiconductor subst...

Method for separating monolithically produced laser diodes