Roughened surface

Industry

CPC
Y10S148/138

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/138Roughened surface

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Bonded structure and method for manufacturing the same
- Patent number 10,486,391
- Issue date Nov 26, 2019
- Honda Motor Co., Ltd.
- Katsuyuki Awano
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method of manufacturing a chip type electronic element
- Patent number 6,171,884
- Issue date Jan 9, 2001
- Murata Manufacturing Co, Ltd
- Masuyoshi Houda
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method of manufacturing a semiconductor device having a capacitor
- Patent number 6,127,240
- Issue date Oct 3, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Kiyoshi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming rough polysilicon surfaces suitable for capacitor...
- Patent number 6,087,240
- Issue date Jul 11, 2000
- Micron Technology, Inc.
- Robin Lee Gilchrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for uniformly doping hemispherical grain polycrystalline sil...
- Patent number 5,885,869
- Issue date Mar 23, 1999
- Micron Technology, Inc.
- Charles Turner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming rough polysilicon surfaces
- Patent number 5,877,063
- Issue date Mar 2, 1999
- Micron Technology, Inc.
- Robin Lee Gilchrist
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectively oxidized field oxide region
- Patent number 5,869,385
- Issue date Feb 9, 1999
- Advanced Micro Devices, Inc.
- Yuan Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a capacitor
- Patent number 5,798,290
- Issue date Aug 25, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Kiyoshi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of fabricating semiconductor device having capacitor increa...
- Patent number 5,597,760
- Issue date Jan 28, 1997
- NEC Corporation
- Toshiyuki Hirota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for production of wafer
- Patent number 5,447,890
- Issue date Sep 5, 1995
- Shin-Etsu Handotai Co., Ltd.
- Tadahiro Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a capacitor in a DRAM cell using a rough overlay...
- Patent number 5,427,974
- Issue date Jun 27, 1995
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a via plug in a semiconductor device
- Patent number 5,409,861
- Issue date Apr 25, 1995
- Hyundai Electronics Industries Co., Ltd.
- Kyeon K. Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a capacitor of a semiconductor device
- Patent number 5,405,801
- Issue date Apr 11, 1995
- Samsung Electronics Co., Ltd.
- Ki-man Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor integrated circuit device having a...
- Patent number 5,372,962
- Issue date Dec 13, 1994
- NEC Corporation
- Toshiyuki Hirota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming enhanced capacitance stacked capacitor structure...
- Patent number 5,340,765
- Issue date Aug 23, 1994
- Micron Semiconductor, Inc.
- Charles H. Dennison
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a capacitor having a rough electrode surface
- Patent number 5,318,920
- Issue date Jun 7, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Yoshio Hayashide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of patterning and manufacturing semiconductor devices
- Patent number 5,256,587
- Issue date Oct 26, 1993
- Goldstar Electron Co., Ltd.
- Young K. Jun
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of producing chip-type solid-electrolyte capacitor
- Patent number 5,254,137
- Issue date Oct 19, 1993
- NEC Corporation
- Toshiyuki Mitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal silicide texturizing technique
- Patent number 5,182,232
- Issue date Jan 26, 1993
- Micron Technology, Inc.
- Navjot Chhabra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce the reflectivity of a semi-conductor metallic surface
- Patent number 5,166,093
- Issue date Nov 24, 1992
- Micron Technology, Inc.
- Malcolm Grief
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device having a non-volatile...
- Patent number 5,094,967
- Issue date Mar 10, 1992
- Kabushiki Kaisha Toshiba
- Kazuyoshi Shinada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing the surface reflectance of a metal layer during...
- Patent number 4,933,304
- Issue date Jun 12, 1990
- SGS-Thomson Microelectronics, Inc.
- Fusen Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing SiO.sub.2 -Si interface for floating gate s...
- Patent number 4,597,159
- Issue date Jul 1, 1986
- Kabushiki Kaisha Toshiba
- Toshiro Usami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 4,125,426
- Issue date Nov 14, 1978
- Fujitsu Limited
- Katsuyuki Inayoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3905162
- Patent number 3,905,162
- Issue date Sep 16, 1975
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
3878552
- Patent number 3,878,552
- Issue date Apr 15, 1975
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3821039
- Patent number 3,821,039
- Issue date Jun 28, 1974
- C30 - CRYSTAL GROWTH
Information Patent Grant
3009841
- Patent number 3,009,841
- Issue date Nov 21, 1961
- H01 - BASIC ELECTRIC ELEMENTS

Roughened surface

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Bonded structure and method for manufacturing the same

Method of manufacturing a chip type electronic element

Method of manufacturing a semiconductor device having a capacitor

Method of forming rough polysilicon surfaces suitable for capacitor...

Method for uniformly doping hemispherical grain polycrystalline sil...

Method of forming rough polysilicon surfaces

Selectively oxidized field oxide region

Method of manufacturing a semiconductor device having a capacitor

Process of fabricating semiconductor device having capacitor increa...

Method for production of wafer

Method for forming a capacitor in a DRAM cell using a rough overlay...

Method of forming a via plug in a semiconductor device

Method for manufacturing a capacitor of a semiconductor device

Method of making a semiconductor integrated circuit device having a...

Method for forming enhanced capacitance stacked capacitor structure...

Method for manufacturing a capacitor having a rough electrode surface

Methods of patterning and manufacturing semiconductor devices

Method of producing chip-type solid-electrolyte capacitor

Metal silicide texturizing technique

Method to reduce the reflectivity of a semi-conductor metallic surface

Method for manufacturing semiconductor device having a non-volatile...

Method for reducing the surface reflectance of a metal layer during...

Method of manufacturing SiO.sub.2 -Si interface for floating gate s...

Method of manufacturing semiconductor device

3905162

3878552

3821039

3009841

Patents Applicationslast 30 patents