3878552

Information

• Patent Grant
• 3878552

• References
• Source

• Patent Number

  3,878,552

• Date Filed

  Not available

• Date Issued

  Tuesday, April 15, 1975
  50 years ago

• CPC

  • H01L29/0661 - specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction
  • H01L21/764 - Air gaps
  • H01L21/8222 - Bipolar technology
  • H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
  • Y10S148/007 - Autodoping
  • Y10S148/025 - Deposition multi-step
  • Y10S148/051 - Etching
  • Y10S148/085 - Isolated-integrated
  • Y10S148/115 - Orientation
  • Y10S148/138 - Roughened surface
  • Y10S148/139 - Schottky barrier
  • Y10S148/168 - V-Grooves

• US Classifications

  • 257 - Active solid-state devices
  • 148 - Metal treatment