Schottky barrier

Industry

CPC
Y10S148/139

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/139Schottky barrier

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a semiconductor device with stabilization...
- Patent number 5,926,705
- Issue date Jul 20, 1999
- NEC Corporation
- Takuo Nishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode with guard ring
- Patent number 5,539,237
- Issue date Jul 23, 1996
- Texas Instruments Incorporated
- James R. Todd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HGCDTE thin film transistor
- Patent number 5,534,719
- Issue date Jul 9, 1996
- Texas Instruments Incorporated
- Richard A. Schiebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making schottky diode with guard ring
- Patent number 5,418,185
- Issue date May 23, 1995
- Texas Instruments Incorporated
- James R. Todd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a HgCdTe thin film transistor
- Patent number 5,403,760
- Issue date Apr 4, 1995
- Texas Instruments Incorporated
- Richard A. Schiebel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor devices
- Patent number 5,393,698
- Issue date Feb 28, 1995
- California Institute of Technology
- William J. Kaiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a field effect transistor with a T-shaped g...
- Patent number 5,358,885
- Issue date Oct 25, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Tomoki Oku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process for Schottky diode with localized diode well
- Patent number 5,268,316
- Issue date Dec 7, 1993
- National Semiconductor Corporation
- Murray J. Robinson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device with Schottky elect...
- Patent number 5,229,323
- Issue date Jul 20, 1993
- Kabushiki Kaisha Toshiba
- Kizashi Shimada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating Schottky barrier diodes and Schottky barrier...
- Patent number 5,225,359
- Issue date Jul 6, 1993
- National Semiconductor Corporation
- Bancherd DeLong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an electronic device with reduced susceptibli...
- Patent number 5,143,857
- Issue date Sep 1, 1992
- TriQuint Semiconductor, Inc.
- Eric P. Finchem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a high-voltage semiconductor device having a...
- Patent number 5,112,774
- Issue date May 12, 1992
- Sanken Electric Co., Ltd.
- Koji Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction between metal and zincblende-type III-V compound semicondu...
- Patent number 5,098,858
- Issue date Mar 24, 1992
- NEC Corporation
- Kazuyoshi Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage semiconductor device having a rectifying barrier, and...
- Patent number 5,081,510
- Issue date Jan 14, 1992
- Sanken Electric Co., Ltd.
- Koji Ohtsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a schottky electrode
- Patent number 5,045,497
- Issue date Sep 3, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Kazuo Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making metal-insulator-metal junction structures with adj...
- Patent number 5,019,530
- Issue date May 28, 1991
- International Business Machines Corporation
- Alan W. Kleinsasser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Display device including lateral Schottky diodes
- Patent number 4,997,788
- Issue date Mar 5, 1991
- U.S. Philips Corporation
- Jan W. D. Martens
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Method for manufacturing a Schottky-type rectifier having controlla...
- Patent number 4,946,803
- Issue date Aug 7, 1990
- North American Philips Corp., Signetics Division
- Russell C. Ellwanger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crank device
- Patent number 4,928,547
- Issue date May 29, 1990
- Vermeulen-Hollandia Octrooien II B.V.
- Johannes N. Huyer
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Forming a transition metal silicide radiation detector and source
- Patent number 4,914,042
- Issue date Apr 3, 1990
- Colorado State University Research Foundation
- John E. Mahan
- G02 - OPTICS
Information Patent Grant
Method of making heterojunction transistors with wide band-gap stop...
- Patent number 4,908,325
- Issue date Mar 13, 1990
- TRW Inc.
- John J. Berenz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the manufacture of a MESFET comprising self aligned gate
- Patent number 4,889,827
- Issue date Dec 26, 1989
- Siemens Aktiengesellschaft
- Josef Willer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonalloyed ohmic contacts for n type gallium arsenide
- Patent number 4,833,042
- Issue date May 23, 1989
- Rockwell International Corporation
- James R. Waldrop
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device utilizing self-alig...
- Patent number 4,830,971
- Issue date May 16, 1989
- Tokyo Shibaura Denki Kabushiki Kaisha
- Tadashi Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-linear control element for a flat electrooptical display screen...
- Patent number 4,810,637
- Issue date Mar 7, 1989
- Thomson-CSF
- Nicolas Szydlo
- G02 - OPTICS
Information Patent Grant
Method for the manufacture of a self-aligned metal contact
- Patent number 4,774,206
- Issue date Sep 27, 1988
- Siemens Aktiengesellschaft
- Josef Willer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film field effect transistor and method of making same
- Patent number 4,769,338
- Issue date Sep 6, 1988
- Energy Conversion Devices, Inc.
- Stanford R. Ovshinsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for the fabrication of a Schottky gate field-effect transis...
- Patent number 4,753,899
- Issue date Jun 28, 1988
- Telefunken Electronic GmbH
- Alexander Colquhoun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a self-aligned MESFET using a substitutional gate...
- Patent number 4,745,082
- Issue date May 17, 1988
- Ford Microelectronics, Inc.
- Siang P. Kwok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the manufacture of a Schottky gate field effect transistor
- Patent number 4,694,564
- Issue date Sep 22, 1987
- Takatomo Enoki
- H01 - BASIC ELECTRIC ELEMENTS

Schottky barrier

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for manufacturing a semiconductor device with stabilization...

Schottky diode with guard ring

HGCDTE thin film transistor

Method of making schottky diode with guard ring

Method of making a HgCdTe thin film transistor

Method for fabricating semiconductor devices

Method of manufacturing a field effect transistor with a T-shaped g...

Fabrication process for Schottky diode with localized diode well

Method for manufacturing a semiconductor device with Schottky elect...

Method of fabricating Schottky barrier diodes and Schottky barrier...

Method of fabricating an electronic device with reduced susceptibli...

Method of fabricating a high-voltage semiconductor device having a...

Junction between metal and zincblende-type III-V compound semicondu...

High-voltage semiconductor device having a rectifying barrier, and...

Method of making a schottky electrode

Method of making metal-insulator-metal junction structures with adj...

Display device including lateral Schottky diodes

Method for manufacturing a Schottky-type rectifier having controlla...

Crank device

Forming a transition metal silicide radiation detector and source

Method of making heterojunction transistors with wide band-gap stop...

Method for the manufacture of a MESFET comprising self aligned gate

Nonalloyed ohmic contacts for n type gallium arsenide

Method for manufacturing a semiconductor device utilizing self-alig...

Non-linear control element for a flat electrooptical display screen...

Method for the manufacture of a self-aligned metal contact

Thin film field effect transistor and method of making same

Process for the fabrication of a Schottky gate field-effect transis...

Method of making a self-aligned MESFET using a substitutional gate...

Method for the manufacture of a Schottky gate field effect transistor