Selective oxidation of ion-amorphousized layer

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Y10S438/966

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S438/00Semiconductor device manufacturing: process

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Y10S438/966Selective oxidation of ion-amorphousized layer

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming low capacitance ESD device and structure therefor
- Patent number 8,039,359
- Issue date Oct 18, 2011
- Semiconductor Components Industries, LLC
- Thomas Keena
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of forming low capacitance ESD device and structure therefor
- Patent number 7,538,395
- Issue date May 26, 2009
- Semiconductor Components Industries, LLC
- Thomas Keena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture thereof
- Patent number 7,425,480
- Issue date Sep 16, 2008
- Kabushiki Kaisha Tohisba
- Yoshio Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture thereof
- Patent number 7,312,138
- Issue date Dec 25, 2007
- Kabushiki Kaisha Toshiba
- Yoshio Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device using an oxidation p...
- Patent number 7,303,946
- Issue date Dec 4, 2007
- Kabushiki Kaisha Toshiba
- Yoshio Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active wafer cooling during damage engineering implant to enhance b...
- Patent number 6,998,353
- Issue date Feb 14, 2006
- Ibis Technology Corporation
- Yuri Erokhin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a thin oxide layer having improved reliability on...
- Patent number 6,900,111
- Issue date May 31, 2005
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having groove and method of fabricating the same
- Patent number 6,869,891
- Issue date Mar 22, 2005
- Samsung Electronics, Co., Ltd.
- Nak-jin Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple-thickness gate oxide formed by oxygen implantation
- Patent number 6,855,994
- Issue date Feb 15, 2005
- The Regents of the University of California
- Ya-Chin King
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multiple-thickness gate oxide formed by oxygen implantation
- Patent number 6,753,229
- Issue date Jun 22, 2004
- The Regents of the University of California
- Ya-Chin King
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a SiGe-on-insulator substrate using separation by...
- Patent number 6,743,651
- Issue date Jun 1, 2004
- International Business Machines Corporation
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using implantation method to control gate oxide thickness on dual o...
- Patent number 6,455,405
- Issue date Sep 24, 2002
- Taiwan Semiconductor Manufacturing Company
- Shao-Yen Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method achieving higher inversion layer mobility in novel silicon c...
- Patent number 6,407,014
- Issue date Jun 18, 2002
- Philips Electronics North America Corporation
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device including patterning lower e...
- Patent number 6,383,859
- Issue date May 7, 2002
- Fujitsu Limited
- Akiyoshi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming electrostatic discharge (ESD) protection transis...
- Patent number 6,232,206
- Issue date May 15, 2001
- National Science Council
- Tiao-Yuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation formation with spacer-assisted ion implant...
- Patent number 6,143,624
- Issue date Nov 7, 2000
- Advanced Micro Devices, Inc.
- Nick Kepler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced CMOS isolation utilizing enhanced oxidation by light ion i...
- Patent number 6,013,557
- Issue date Jan 11, 2000
- Micron Technology, Inc.
- Zhiqiang Jeff Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxidized oxygen-doped amorphous silicon ultrathin gate oxide struct...
- Patent number 5,930,658
- Issue date Jul 27, 1999
- Advanced Micro Devices, Inc.
- Effiong E. Ibok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field oxidation by implanted oxygen (FIMOX)
- Patent number 5,895,252
- Issue date Apr 20, 1999
- United Microelectronics Corporation
- Water Lur
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS isolation utilizing enhanced oxidation of recessed porous sili...
- Patent number 5,863,826
- Issue date Jan 26, 1999
- Micron Technology, Inc.
- Zhiqiang Jeff Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride cap sidewell oxide protection from BOE etch
- Patent number 5,517,045
- Issue date May 14, 1996
- Taiwan Semiconductor Manufacturing Co.
- Yen-Shyh Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device using implantation an...
- Patent number 5,407,838
- Issue date Apr 18, 1995
- Sharp Kabushiki Kaisha
- Tetsuya Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming isolated semiconductor structures
- Patent number 5,376,560
- Issue date Dec 27, 1994
- National Semiconductor Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming isolated semiconductor structures
- Patent number 5,372,952
- Issue date Dec 13, 1994
- National Semiconductor Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride cap sidewall oxide protection from BOE etch
- Patent number 5,364,804
- Issue date Nov 15, 1994
- Taiwan Semiconductor Manufacturing Company
- Yen-Shyh Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an oxide-filled trench in silicon carbide
- Patent number 5,270,244
- Issue date Dec 14, 1993
- North Carolina State University at Raleigh
- Bantval J. Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a radiation resistance and method for m...
- Patent number 5,219,766
- Issue date Jun 15, 1993
- Oki Electric Industry Co., Ltd.
- Hiroyuki Fukunaga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for reducing program disturbance in EEPROM arrays
- Patent number 5,215,934
- Issue date Jun 1, 1993
- Jyh-Cherng J. Tzeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned masking for ultra-high energy implants with applicatio...
- Patent number 5,043,292
- Issue date Aug 27, 1991
- National Semiconductor Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming isolation trenches in silicon semiconductor bodies
- Patent number 4,957,873
- Issue date Sep 18, 1990
- STC PLC
- Sureshchandra M. Ojha
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR
- Publication number 20090162988
- Publication date Jun 25, 2009
- Thomas Keena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR
- Publication number 20090079022
- Publication date Mar 26, 2009
- Thomas Keena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacture thereof
- Publication number 20070218605
- Publication date Sep 20, 2007
- Kabushiki Kaisha Toshiba
- Yoshio Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacture thereof
- Publication number 20070218606
- Publication date Sep 20, 2007
- Kabushiki Kaisha Toshiba
- Yoshio Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a SiGe-on-insulator substrate using separation by...
- Publication number 20030199126
- Publication date Oct 23, 2003
- International Business Machines Corporation
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Active wafer cooling during damage engineering implant to enchance...
- Publication number 20030087504
- Publication date May 8, 2003
- Yuri Erokhin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having groove and method of fabricating the same
- Publication number 20030068875
- Publication date Apr 10, 2003
- SAMSUNG ELECTRONICS CO., LTD.
- Nak-Jin Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a thin oxide layer having improved reliability on...
- Publication number 20030008524
- Publication date Jan 9, 2003
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of achieving higher inversion layer mobility in novel silico...
- Publication number 20020130325
- Publication date Sep 19, 2002
- PHILIPS ELECTRONICS NORTH AMERICA CORPORATION
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF THE SAME
- Publication number 20020009847
- Publication date Jan 24, 2002
- FUJITSU LIMITED
- AKIYOSHI WATANABE
- H01 - BASIC ELECTRIC ELEMENTS

Selective oxidation of ion-amorphousized layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of forming low capacitance ESD device and structure therefor

Method of forming low capacitance ESD device and structure therefor

Semiconductor device and method of manufacture thereof

Semiconductor device and method of manufacture thereof

Method of manufacturing a semiconductor device using an oxidation p...

Active wafer cooling during damage engineering implant to enhance b...

Method of forming a thin oxide layer having improved reliability on...

Semiconductor device having groove and method of fabricating the same

Multiple-thickness gate oxide formed by oxygen implantation

Multiple-thickness gate oxide formed by oxygen implantation

Method of forming a SiGe-on-insulator substrate using separation by...

Using implantation method to control gate oxide thickness on dual o...

Method achieving higher inversion layer mobility in novel silicon c...

Method of forming semiconductor device including patterning lower e...

Method for forming electrostatic discharge (ESD) protection transis...

Shallow trench isolation formation with spacer-assisted ion implant...

Advanced CMOS isolation utilizing enhanced oxidation by light ion i...

Oxidized oxygen-doped amorphous silicon ultrathin gate oxide struct...

Field oxidation by implanted oxygen (FIMOX)

CMOS isolation utilizing enhanced oxidation of recessed porous sili...

Nitride cap sidewell oxide protection from BOE etch

Method for fabricating a semiconductor device using implantation an...

Method for forming isolated semiconductor structures

Method for forming isolated semiconductor structures

Nitride cap sidewall oxide protection from BOE etch

Method for forming an oxide-filled trench in silicon carbide

Semiconductor device having a radiation resistance and method for m...

Process for reducing program disturbance in EEPROM arrays

Self-aligned masking for ultra-high energy implants with applicatio...

Process for forming isolation trenches in silicon semiconductor bodies

Patents Applicationslast 30 patents

METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR

METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR

Semiconductor device and method of manufacture thereof

Semiconductor device and method of manufacture thereof

Method of forming a SiGe-on-insulator substrate using separation by...

Active wafer cooling during damage engineering implant to enchance...

Semiconductor device having groove and method of fabricating the same

Method of forming a thin oxide layer having improved reliability on...

Method of achieving higher inversion layer mobility in novel silico...

SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF THE SAME