Single-crystal growth by condensing evaporated or sublimed material

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Patents Grantslast 30 patents

Information Patent Grant
Transparent conductive oxide thin film and use thereof
- Patent number 11,982,017
- Issue date May 14, 2024
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sc...
- Ruyi Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ion conductive material, electrolyte including ion conductive mater...
- Patent number 11,978,847
- Issue date May 7, 2024
- Saint-Gobain Ceramics & Plastics, Inc.
- Vladimir Ouspenski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a monocrystalline layer of GaAs material a...
- Patent number 11,976,380
- Issue date May 7, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ion conductive material including halide material, electrolyte incl...
- Patent number 11,973,186
- Issue date Apr 30, 2024
- Saint-Gobain Ceramics & Plastics, Inc.
- Vladimir Ouspenski
- C30 - CRYSTAL GROWTH
Information Patent Grant
Superconductor-semiconductor fabrication
- Patent number 11,974,509
- Issue date Apr 30, 2024
- Microsoft Technology Licensing, LLC
- Peter Krogstrup Jeppesen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for manufacturing sputtering target, method for forming oxid...
- Patent number 11,967,505
- Issue date Apr 23, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon carbide crystal
- Patent number 11,952,676
- Issue date Apr 9, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate manufacturing device applicable to large-di...
- Patent number 11,955,354
- Issue date Apr 9, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC single crystal growth crucible, SiC single crystal manufacturin...
- Patent number 11,946,156
- Issue date Apr 2, 2024
- Resonac Corporation
- Yohei Fujikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Impurity control during formation of aluminum nitride crystals and...
- Patent number 11,939,700
- Issue date Mar 26, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Wafer manufacturing method, epitaxial wafer manufacturing method, a...
- Patent number 11,939,698
- Issue date Mar 26, 2024
- SENIC INC.
- Jong Hwi Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin plate-shaped single-crystal production equipment and thin plat...
- Patent number 11,939,696
- Issue date Mar 26, 2024
- Crystal Systems Corporation
- Isamu Shindo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of synthesizing molybdenum oxychloride by reacting molybdenu...
- Patent number 11,939,231
- Issue date Mar 26, 2024
- JX Metals Corporation
- Hideyuki Takahashi
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for manufacturing a monocrystalline layer of diamond or irid...
- Patent number 11,935,743
- Issue date Mar 19, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal manufacturing method, SiC single crystal manufac...
- Patent number 11,932,967
- Issue date Mar 19, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Molecular-beam epitaxy system comprising an infrared radiation emit...
- Patent number 11,926,925
- Issue date Mar 12, 2024
- The Johns Hopkins University
- David B. Shrekenhamer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for crystal growth by replacing a sublimated target source...
- Patent number 11,926,922
- Issue date Mar 12, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of evaluating cleanliness, method of determining cleaning co...
- Patent number 11,920,257
- Issue date Mar 5, 2024
- Sumco Corporation
- Takashi Muramatsu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thermal control for formation and processing of aluminum nitride
- Patent number 11,913,136
- Issue date Feb 27, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC semiconductor device
- Patent number 11,916,112
- Issue date Feb 27, 2024
- Rohm Co., Ltd.
- Yasuhiro Kawakami
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal, method of manufacturing SiC ingot, and method o...
- Patent number 11,905,621
- Issue date Feb 20, 2024
- Resonac Corporation
- Shunsuke Noguchi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Large diameter silicon carbide single crystals and apparatus and me...
- Patent number 11,905,618
- Issue date Feb 20, 2024
- II-VI ADVANCED MATERIALS, LLC
- Xueping Xu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
High sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell...
- Patent number 11,905,622
- Issue date Feb 20, 2024
- North Carolina A&T State University
- Shanthi Iyer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Band edge emission enhanced organic light emitting diode with a loc...
- Patent number 11,895,865
- Issue date Feb 6, 2024
- RED BANK TECHNOLOGIES LLC
- John N. Magno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for preparing a monolayer or few-layer crystalline black ph...
- Patent number 11,885,039
- Issue date Jan 30, 2024
- The Hong Kong Polytechnic University
- Jianhua Hao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal epitaxial layer having a rhombohedral lattice
- Patent number 11,885,040
- Issue date Jan 30, 2024
- UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF NASA.
- Hyun Jung Kim
- C30 - CRYSTAL GROWTH
Information Patent Grant
Alkali semi-metal films and method and apparatus for fabricating them
- Patent number 11,881,391
- Issue date Jan 23, 2024
- Radiation Monitoring Devices, Inc.
- Harish B. Bhandari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
8-inch SiC single crystal substrate
- Patent number 11,859,313
- Issue date Jan 2, 2024
- Resonac Corporation
- Tomohiro Shonai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method for a group-III nitride crystal that requires...
- Patent number 11,859,311
- Issue date Jan 2, 2024
- Panasonic Holdings Corporation
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of cleaning a group III-nitride single crystal substrate com...
- Patent number 11,859,312
- Issue date Jan 2, 2024
- Tokuyama Corporation
- Masayuki Fukuda
- B08 - CLEANING

Patents Applicationslast 30 patents

Information Patent Application
MULTILAYER FILM STRUCTURE AND METHOD FOR PRODUCING SAME
- Publication number 20240158954
- Publication date May 16, 2024
- TOSOH CORPORATION
- Yuya TSUCHIDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE
- Publication number 20240158912
- Publication date May 16, 2024
- Silanna UV Technologies Pte Ltd
- Petar Atanackovic
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND ME...
- Publication number 20240150931
- Publication date May 9, 2024
- II-VI ADVANCED MATERIALS, LLC
- Xueping XU
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE
- Publication number 20240150930
- Publication date May 9, 2024
- KISELKARBID I STOCKHOLM AB
- Lin DONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF GROWING HIGH-QUALITY SINGLE CRYSTAL SILICON CARBIDE
- Publication number 20240150929
- Publication date May 9, 2024
- KISELKARBID I STOCKHOLM AB
- Li DONG
- C30 - CRYSTAL GROWTH
Information Patent Application
MULTILAYER BODY
- Publication number 20240133075
- Publication date Apr 25, 2024
- Mitsui Mining and Smelting Co., Ltd.
- Sakiko YABU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR GROWING A LATTICE MATCHED, MULTILAYER, ORGANI...
- Publication number 20240117521
- Publication date Apr 11, 2024
- The Trustees of Princeton University
- Barry Rand
- C30 - CRYSTAL GROWTH
Information Patent Application
Deposition Of Piezoelectric Films
- Publication number 20240114800
- Publication date Apr 4, 2024
- Applied Materials, Inc.
- Vijay Bhan Sharma
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS
- Publication number 20240110307
- Publication date Apr 4, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PROVIDING A REACTION CHAMBER, REACTION CHAMBER AND LASER...
- Publication number 20240110275
- Publication date Apr 4, 2024
- Max-Planck-Gesellschaft zur Forderung der Wissenschaften e.V.
- Wolfgang BRAUN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING...
- Publication number 20240105782
- Publication date Mar 28, 2024
- TANKEBLUE SEMICONDUCTOR CO., LTD.
- Yanfang LOU
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
Method and Device for Producing a SiC Solid Material
- Publication number 20240093408
- Publication date Mar 21, 2024
- Zadient Technologies SAS
- Ivo Crössmann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MOLECULAR BEAM EPITAXY THIN FILM GROWTH APPARATUS
- Publication number 20240084442
- Publication date Mar 14, 2024
- University of Ulsan Foundation for Industry Cooperation
- Eun Jung PARK
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, A...
- Publication number 20240076799
- Publication date Mar 7, 2024
- SENIC Inc.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for producing silicon carbide crystal
- Publication number 20240068124
- Publication date Feb 29, 2024
- HERMES-EPITEK CORP.
- CHIH-LUNG LIN
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE-CRYSTAL GROWTH APPARATUS AND METHOD OF GROWING SIC CRYSTAL
- Publication number 20240068125
- Publication date Feb 29, 2024
- SEC CARBON, Ltd.
- Hiromu SHIOMI
- C30 - CRYSTAL GROWTH
Information Patent Application
HEAT-RESISTANT MEMBER
- Publication number 20240068128
- Publication date Feb 29, 2024
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Daisuke NAKAMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
SIMULTANEOUS GROWTH OF TWO SILICON CARBIDE LAYERS
- Publication number 20240068127
- Publication date Feb 29, 2024
- KISELKARBID I STOCKHOLM AB
- Lin DONG
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND METHO...
- Publication number 20240060212
- Publication date Feb 22, 2024
- Senic Inc.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE
- Publication number 20240052520
- Publication date Feb 15, 2024
- KISELKARBID I STOCKHOLM AB
- Johan Peter EKMAN
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Technique for Forming Cubic Silicon Carbide and Heterojunction Sili...
- Publication number 20240047207
- Publication date Feb 8, 2024
- Christian Zmoelnig
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF USING SIC CONTAINER
- Publication number 20240044042
- Publication date Feb 8, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Device for Producing a SiC Solid Material
- Publication number 20240044045
- Publication date Feb 8, 2024
- Zadient Technologies SAS
- Ivo Crössmann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CRYSTAL GROWTH DEVICE AND METHOD FOR GROWING A SEMICONDUCTOR
- Publication number 20240044044
- Publication date Feb 8, 2024
- FORSCHUNGSVERBUND BERLIN E.V.
- Carsten HARTMANN
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and Device for Producing a SiC Solid Material
- Publication number 20240035153
- Publication date Feb 1, 2024
- Zadient Technologies SAS
- Ivo Crössmann
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Method and Device for Producing a SiC Solid Material
- Publication number 20240035201
- Publication date Feb 1, 2024
- Zadient Technologies SAS
- Ivo Crössmann
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LARGE-AREA SINGLE-CRYSTAL SILVER THIN-FILM STRUCTURE USING SINGLE-C...
- Publication number 20240027661
- Publication date Jan 25, 2024
- Pusan National University Industry-University Cooperation Foundation
- Se Young JEONG
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH METHOD AND WAFER
- Publication number 20240011186
- Publication date Jan 11, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH FURNACE SYSTEM
- Publication number 20240011187
- Publication date Jan 11, 2024
- GLOBALWAFERS CO., LTD.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES,...
- Publication number 20240011184
- Publication date Jan 11, 2024
- National University of Singapore
- Andrivo RUSYDI
- C30 - CRYSTAL GROWTH

Single-crystal growth by condensing evaporated or sublimed material

Industry

Parent Industries

Current Industry

Sub Industries

Patents Grantslast 30 patents

Transparent conductive oxide thin film and use thereof

Ion conductive material, electrolyte including ion conductive mater...

Method for manufacturing a monocrystalline layer of GaAs material a...

Ion conductive material including halide material, electrolyte incl...

Superconductor-semiconductor fabrication

Method for manufacturing sputtering target, method for forming oxid...

Silicon carbide crystal

Semiconductor substrate manufacturing device applicable to large-di...

SiC single crystal growth crucible, SiC single crystal manufacturin...

Impurity control during formation of aluminum nitride crystals and...

Wafer manufacturing method, epitaxial wafer manufacturing method, a...

Thin plate-shaped single-crystal production equipment and thin plat...

Method of synthesizing molybdenum oxychloride by reacting molybdenu...

Method for manufacturing a monocrystalline layer of diamond or irid...

SiC single crystal manufacturing method, SiC single crystal manufac...

Molecular-beam epitaxy system comprising an infrared radiation emit...

Methods for crystal growth by replacing a sublimated target source...

Method of evaluating cleanliness, method of determining cleaning co...

Thermal control for formation and processing of aluminum nitride

SiC semiconductor device

SiC single crystal, method of manufacturing SiC ingot, and method o...

Large diameter silicon carbide single crystals and apparatus and me...

High sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell...

Band edge emission enhanced organic light emitting diode with a loc...

Methods for preparing a monolayer or few-layer crystalline black ph...

Single crystal epitaxial layer having a rhombohedral lattice

Alkali semi-metal films and method and apparatus for fabricating them

8-inch SiC single crystal substrate

Manufacturing method for a group-III nitride crystal that requires...

Method of cleaning a group III-nitride single crystal substrate com...

Patents Applicationslast 30 patents

MULTILAYER FILM STRUCTURE AND METHOD FOR PRODUCING SAME

MATERIAL DEPOSITION SYSTEM EQUIPMENT MAINTENANCE

LARGE DIAMETER SILICON CARBIDE SINGLE CRYSTALS AND APPARATUS AND ME...

SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE

METHOD OF GROWING HIGH-QUALITY SINGLE CRYSTAL SILICON CARBIDE

MULTILAYER BODY

METHOD AND SYSTEM FOR GROWING A LATTICE MATCHED, MULTILAYER, ORGANI...

Deposition Of Piezoelectric Films

METHODS AND SYSTEMS FOR PRODUCING COMPOSITE CRYSTALS

METHOD OF PROVIDING A REACTION CHAMBER, REACTION CHAMBER AND LASER...

MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING...

Method and Device for Producing a SiC Solid Material

MOLECULAR BEAM EPITAXY THIN FILM GROWTH APPARATUS

WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, A...

Apparatus for producing silicon carbide crystal

SIC SINGLE-CRYSTAL GROWTH APPARATUS AND METHOD OF GROWING SIC CRYSTAL

HEAT-RESISTANT MEMBER

SIMULTANEOUS GROWTH OF TWO SILICON CARBIDE LAYERS

SILICON CARBIDE POWDER, METHOD FOR MANUFACTURING THE SAME AND METHO...

SYSTEM AND METHOD OF PRODUCING MONOCRYSTALLINE LAYERS ON A SUBSTRATE

Technique for Forming Cubic Silicon Carbide and Heterojunction Sili...

METHOD OF USING SIC CONTAINER

Method and Device for Producing a SiC Solid Material

CRYSTAL GROWTH DEVICE AND METHOD FOR GROWING A SEMICONDUCTOR

Method and Device for Producing a SiC Solid Material

Method and Device for Producing a SiC Solid Material

LARGE-AREA SINGLE-CRYSTAL SILVER THIN-FILM STRUCTURE USING SINGLE-C...

CRYSTAL GROWTH METHOD AND WAFER

CRYSTAL GROWTH FURNACE SYSTEM

HIGHLY ORIENTED, SINGLE-CRYSTALLINE LOW-DIMENSIONAL NANOSTRUCTURES,...