Solid phase epitaxy

Industry

CPC
Y10S148/154

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S148/00Metal treatment

Current Industry

Y10S148/154Solid phase epitaxy

Industries

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a thin film transistor
- Patent number 6,319,761
- Issue date Nov 20, 2001
- Semiconductor Energy Laboratory Co., Ltd.
- Hongyong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised source/drain with silicided contacts for semiconductor devices
- Patent number 5,760,451
- Issue date Jun 2, 1998
- International Business Machines Corporation
- Anthony J. Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor material having a substantially I...
- Patent number 5,580,820
- Issue date Dec 3, 1996
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a thin film transistor using a nickel silicid...
- Patent number 5,488,000
- Issue date Jan 30, 1996
- Semiconductor Energy Laboratory Co., Ltd.
- Hongyong Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor photoelectric conversion device ha...
- Patent number 5,478,777
- Issue date Dec 26, 1995
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making silicided contacts for semiconductor devices
- Patent number 5,409,853
- Issue date Apr 25, 1995
- International Business Machines Corporation
- Anthony J. Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor thin film
- Patent number 5,278,093
- Issue date Jan 11, 1994
- Canon Kabushiki Kaisha
- Takao Yonehara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for the production of polycrystalline layers having granular...
- Patent number 5,238,879
- Issue date Aug 24, 1993
- Siemens Aktiengesellschaft
- Rolf Plaettner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making amorphous deposited polycrystalline silicon therma...
- Patent number 5,169,806
- Issue date Dec 8, 1992
- Xerox Corporation
- William G. Hawkins
- B41 - PRINTING LINING MACHINES TYPEWRITERS STAMPS
Information Patent Grant
Ultra-high-speed photoconductive devices using semi-insulating layers
- Patent number 5,168,069
- Issue date Dec 1, 1992
- Massachusetts Institute of Technology
- Frank W. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of nanometer single crystal metallic CoSi.sub.2 structu...
- Patent number 5,075,243
- Issue date Dec 24, 1991
- The United States of America as represented by the administrator of the Natio...
- Kai-Wei Nieh
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Capping technique for zone-melting recrystallization of insulated s...
- Patent number 5,066,610
- Issue date Nov 19, 1991
- Massachusetts Institute of Technology
- Chenson K. Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing SOI structures
- Patent number 5,061,655
- Issue date Oct 29, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Takashi Ipposhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,057,452
- Issue date Oct 15, 1991
- U.S. Philips Corporation
- Matthias J. J. Theunissen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a tandem PIN semiconductor photoelectric conversio...
- Patent number 5,045,482
- Issue date Sep 3, 1991
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a bipolar transistor with ultra-thin epitaxia...
- Patent number 5,024,957
- Issue date Jun 18, 1991
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heteroepitaxial growth method
- Patent number 5,019,529
- Issue date May 28, 1991
- Fujitsu Limited
- Kanetake Takasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming improved encapsulation layer
- Patent number 4,990,464
- Issue date Feb 5, 1991
- North American Philips Corp.
- Helmut Baumgart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of epitaxial si-ge heterostructures by solid phase epitaxy
- Patent number 4,975,387
- Issue date Dec 4, 1990
- The United States of America as represented by the Secretary of the Navy
- Sharka M. Prokes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor photoelectric conversion device and method of making...
- Patent number 4,954,856
- Issue date Sep 4, 1990
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making buffer layers for III-V devices using solid phase...
- Patent number 4,952,527
- Issue date Aug 28, 1990
- Massachusetts Institute of Technology
- Arthur R. Calawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a tandem type semiconductor photoelectric conversi...
- Patent number 4,950,614
- Issue date Aug 21, 1990
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming intermediate buffer films with low plastic deform...
- Patent number 4,935,385
- Issue date Jun 19, 1990
- Xerox Corporation
- David K. Biegelsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heteroepitaxial selective-area growth through insulator windows
- Patent number 4,914,053
- Issue date Apr 3, 1990
- Texas Instruments Incorporated
- Richard J. Matyi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial process for silicon on insulator structure
- Patent number 4,902,642
- Issue date Feb 20, 1990
- Texas Instruments, Incorporated
- Bor-Yen Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a heteroepitaxial semiconductor thin film using a...
- Patent number 4,876,219
- Issue date Oct 24, 1989
- Fujitsu Limited
- Takashi Eshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI process for forming a thin film transistor using solid phase ep...
- Patent number 4,808,546
- Issue date Feb 28, 1989
- Hitachi, Ltd.
- Masahiro Moniwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried interconnect for silicon on insulator structure
- Patent number 4,778,775
- Issue date Oct 18, 1988
- Intel Corporation
- J. C. Tzeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for growing silicon-on-insulator wafers using lateral epita...
- Patent number 4,760,036
- Issue date Jul 26, 1988
- Delco Electronics Corporation
- Peter J. Schubert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making group IV single crystal layers on group III-V subs...
- Patent number 4,757,030
- Issue date Jul 12, 1988
- Cornell Research Foundation, Inc.
- Gregory J. Galvin
- H01 - BASIC ELECTRIC ELEMENTS

Solid phase epitaxy

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of fabricating a thin film transistor

Raised source/drain with silicided contacts for semiconductor devices

Method of forming a semiconductor material having a substantially I...

Method of fabricating a thin film transistor using a nickel silicid...

Method of making a semiconductor photoelectric conversion device ha...

Process of making silicided contacts for semiconductor devices

Method for forming semiconductor thin film

Method for the production of polycrystalline layers having granular...

Method of making amorphous deposited polycrystalline silicon therma...

Ultra-high-speed photoconductive devices using semi-insulating layers

Fabrication of nanometer single crystal metallic CoSi.sub.2 structu...

Capping technique for zone-melting recrystallization of insulated s...

Method of producing SOI structures

Method of manufacturing a semiconductor device

Method of making a tandem PIN semiconductor photoelectric conversio...

Method of fabricating a bipolar transistor with ultra-thin epitaxia...

Heteroepitaxial growth method

Method of forming improved encapsulation layer

Formation of epitaxial si-ge heterostructures by solid phase epitaxy

Semiconductor photoelectric conversion device and method of making...

Method of making buffer layers for III-V devices using solid phase...

Method of making a tandem type semiconductor photoelectric conversi...

Method of forming intermediate buffer films with low plastic deform...

Heteroepitaxial selective-area growth through insulator windows

Epitaxial process for silicon on insulator structure

Method of forming a heteroepitaxial semiconductor thin film using a...

SOI process for forming a thin film transistor using solid phase ep...

Buried interconnect for silicon on insulator structure

Process for growing silicon-on-insulator wafers using lateral epita...

Method of making group IV single crystal layers on group III-V subs...