the floating gate being an electrode shared by a plurality of components

Industry

CPC
H01L27/1156

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

Current Industry

H01L27/1156the floating gate being an electrode shared by a plurality of components

Industries

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory device and manufacturing method of the semicon...
- Patent number 11,688,682
- Issue date Jun 27, 2023
- SK hynix Inc.
- Jin Won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 11,682,677
- Issue date Jun 20, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile memory device and method for fabricating the same
- Patent number 11,683,934
- Issue date Jun 20, 2023
- Samsung Electronics Co., Ltd.
- Young-Jin Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D flash memory with annular channel structure and array layout the...
- Patent number 11,678,486
- Issue date Jun 13, 2023
- MACRONIX INIERNATIONAL CO., LTD.
- Hang-Ting Lue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded memory using SOI structures and methods
- Patent number 11,678,491
- Issue date Jun 13, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien Hung Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,676,836
- Issue date Jun 13, 2023
- Samsung Electronics Co., Ltd.
- Jae Ick Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,676,975
- Issue date Jun 13, 2023
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device having stacked structures and method for manufact...
- Patent number 11,678,487
- Issue date Jun 13, 2023
- SK Hynix Inc.
- Ki Hong Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including separated epitaxial layers
- Patent number 11,672,121
- Issue date Jun 6, 2023
- Renesas Electronics Corporation
- Tadashi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including at least one channel post wit...
- Patent number 11,672,122
- Issue date Jun 6, 2023
- SK hynix Inc.
- Sung Wook Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices
- Patent number 11,672,119
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Jisung Cheon
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense line structures in capacitive sense NAND memory
- Patent number 11,670,379
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory arrays and methods used in forming a memory array comprising...
- Patent number 11,672,114
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Bharat Bhushan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and method for manufacturing same
- Patent number 11,672,117
- Issue date Jun 6, 2023
- Kioxia Corporation
- Kotaro Fujii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Page buffer and memory device including the same
- Patent number 11,670,377
- Issue date Jun 6, 2023
- Samsung Electronics Co., Ltd.
- Se Won Yun
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor devices
- Patent number 11,664,362
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Hyun Mog Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory device having an insulator layer for improved yield
- Patent number 11,665,906
- Issue date May 30, 2023
- Kioxia Corporation
- Tomoya Inden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure in three-dimensional memory device and method f...
- Patent number 11,665,892
- Issue date May 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhongwang Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device having adjoined source contact stru...
- Patent number 11,665,901
- Issue date May 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Lu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and photomask
- Patent number 11,665,898
- Issue date May 30, 2023
- Kioxia Corporation
- Daisuke Kawamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical memory devices including charge trapping patterns with imp...
- Patent number 11,665,900
- Issue date May 30, 2023
- Samsung Electronics Co., Ltd.
- Younghwan Son
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage device and manufacturing method thereof
- Patent number 11,665,902
- Issue date May 30, 2023
- Kioxia Corporation
- Takayuki Kashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split gate memory device and method of fabricating the same
- Patent number 11,658,224
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chang-Ming Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor memory devices
- Patent number 11,659,712
- Issue date May 23, 2023
- Samsung Electronics Co., Ltd.
- Taehee Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and manufacturing method of the semicon...
- Patent number 11,658,113
- Issue date May 23, 2023
- SK hynix Inc.
- Jin Won Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies
- Patent number 11,658,132
- Issue date May 23, 2023
- Micron Technology, Inc.
- Rohit Kothari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device including discrete charge storage e...
- Patent number 11,659,711
- Issue date May 23, 2023
- SanDisk Technologies LLC
- Yuki Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Access operations in capacitive sense NAND memory
- Patent number 11,657,880
- Issue date May 23, 2023
- Micron Technology, Inc.
- Yoshiaki Fukuzumi
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with source structure and methods f...
- Patent number 11,653,495
- Issue date May 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with improved data retention
- Patent number 11,653,498
- Issue date May 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Gulbagh Singh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240234528
- Publication date Jul 11, 2024
- RENESAS ELECTRONICS CORPORATION
- Hitoshi MAEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile Memory Cell
- Publication number 20240179900
- Publication date May 30, 2024
- AMIC Technology Corporation
- Hsiao-Hua Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240179903
- Publication date May 30, 2024
- WINBOND ELECTRONICS CORP.
- Frederick Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD
- Publication number 20240170393
- Publication date May 23, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240136419
- Publication date Apr 25, 2024
- RENESAS ELECTRONICS CORPORATION
- Hitoshi MAEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY
- Publication number 20240114685
- Publication date Apr 4, 2024
- Western Digital Technologies, Inc.
- Liang Li
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20240114688
- Publication date Apr 4, 2024
- United Microelectronics Corp.
- Chia-Wen Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENING MONITORIN...
- Publication number 20240107758
- Publication date Mar 28, 2024
- SANDISK TECHNOLOGIES LLC
- Hiroyuki OGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING OXIDE-NITRIDE-OXIDE STACK OF NON-VOLATILE MEMORY...
- Publication number 20240107771
- Publication date Mar 28, 2024
- Infineon Technologies LLC
- Michael ALLEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240107760
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240107761
- Publication date Mar 28, 2024
- Yangtze Memory Technologies Co., Ltd.
- Di Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240098989
- Publication date Mar 21, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhengliang Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240081058
- Publication date Mar 7, 2024
- Macronix International Co., Ltd.
- Yan-Ru Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED...
- Publication number 20240079057
- Publication date Mar 7, 2024
- Micron Technology, Inc.
- Anna Maria Conti
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRONIC DEVICES INCLUDING A METAL SILICIDE MATERIAL OVER A SOURC...
- Publication number 20240081057
- Publication date Mar 7, 2024
- Micron Technology, Inc.
- Jordan D. Greenlee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
- Publication number 20240074181
- Publication date Feb 29, 2024
- Yangtze Memory Technologies Co., Ltd.
- Linchun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...
- Publication number 20240074200
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Bing ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FOLDED STAIRCASE VIA ROUTING FOR MEMORY
- Publication number 20240071902
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Shuangqiang Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...
- Publication number 20240071498
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Yongjun Jeff Hu
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DIPOLE-CONTAINING BLOCKIN...
- Publication number 20240074170
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Takashi YUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Circuitry And Method Used In Forming Memory Circuitry
- Publication number 20240071495
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Jiewei Chen
- G11 - INFORMATION STORAGE
Information Patent Application
BONDED ASSEMBLY CONTAINING CONDUCTIVE VIA STRUCTURES EXTENDING THRO...
- Publication number 20240074171
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Masanori TSUTSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES COMPRISING A STEPPED PILLAR REGION, AND RELATED...
- Publication number 20240074184
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Masaaki Higuchi
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Circuitry And Method Used In Forming Memory Circuitry
- Publication number 20240071496
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- John D. Hopkins
- G11 - INFORMATION STORAGE
Information Patent Application
3D SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240074185
- Publication date Feb 29, 2024
- SK HYNIX INC.
- Young Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES INCLUDING STACKS INCLUDING CONDUCTIVE STRUCTURES...
- Publication number 20240055350
- Publication date Feb 15, 2024
- Micron Technology, Inc.
- Mark S. Swenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING TRENCH BRIDGES AND METHOD...
- Publication number 20240057332
- Publication date Feb 15, 2024
- SANDISK TECHNOLOGIES LLC
- Koichi MATSUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE INCLUDING TRENCH BRIDGES AND METHOD...
- Publication number 20240057331
- Publication date Feb 15, 2024
- SANDISK TECHNOLOGIES LLC
- Koichi MATSUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Circuitry And Method Used In Forming Memory Circuitry
- Publication number 20240046989
- Publication date Feb 8, 2024
- Micron Technology, Inc.
- Jiewei Chen
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL ARRAY WITH INCREASED SOURCE BIAS VOLTAGE
- Publication number 20240049470
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Jun Wu
- G11 - INFORMATION STORAGE

the floating gate being an electrode shared by a plurality of components

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor memory device and manufacturing method of the semicon...

Semiconductor device and method for manufacturing the same

Nonvolatile memory device and method for fabricating the same

3D flash memory with annular channel structure and array layout the...

Embedded memory using SOI structures and methods

Semiconductor device

Semiconductor device

Electronic device having stacked structures and method for manufact...

Semiconductor memory device including separated epitaxial layers

Semiconductor memory device including at least one channel post wit...

Vertical memory devices

Sense line structures in capacitive sense NAND memory

Memory arrays and methods used in forming a memory array comprising...

Semiconductor memory device and method for manufacturing same

Page buffer and memory device including the same

Semiconductor devices

Vertical memory device having an insulator layer for improved yield

Staircase structure in three-dimensional memory device and method f...

Three-dimensional memory device having adjoined source contact stru...

Semiconductor device and photomask

Vertical memory devices including charge trapping patterns with imp...

Semiconductor storage device and manufacturing method thereof

Split gate memory device and method of fabricating the same

Three-dimensional semiconductor memory devices

Semiconductor memory device and manufacturing method of the semicon...

Integrated assemblies

Three-dimensional memory device including discrete charge storage e...

Access operations in capacitive sense NAND memory

Three-dimensional memory device with source structure and methods f...

Memory device with improved data retention

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

Non-volatile Memory Cell

MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

THREE DIMENSIONAL (3D) MEMORY DEVICE AND FABRICATION METHOD

SEMICONDUCTOR DEVICE

CONFIGURABLE CAPACITORS WITH 3D NON-VOLATILE ARRAY

MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICE CONTAINING MEMORY OPENING MONITORIN...

METHOD OF FORMING OXIDE-NITRIDE-OXIDE STACK OF NON-VOLATILE MEMORY...

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED...

ELECTRONIC DEVICES INCLUDING A METAL SILICIDE MATERIAL OVER A SOURC...

THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THEREOF USING...

FOLDED STAIRCASE VIA ROUTING FOR MEMORY

Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING DIPOLE-CONTAINING BLOCKIN...

Memory Circuitry And Method Used In Forming Memory Circuitry

BONDED ASSEMBLY CONTAINING CONDUCTIVE VIA STRUCTURES EXTENDING THRO...

ELECTRONIC DEVICES COMPRISING A STEPPED PILLAR REGION, AND RELATED...

Memory Circuitry And Method Used In Forming Memory Circuitry

3D SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

ELECTRONIC DEVICES INCLUDING STACKS INCLUDING CONDUCTIVE STRUCTURES...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING TRENCH BRIDGES AND METHOD...

THREE-DIMENSIONAL MEMORY DEVICE INCLUDING TRENCH BRIDGES AND METHOD...

Memory Circuitry And Method Used In Forming Memory Circuitry

MEMORY CELL ARRAY WITH INCREASED SOURCE BIAS VOLTAGE